| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 02/25/2009 | CN101375424A Magnetic field sensing element |
| 02/25/2009 | CN101373813A Method for improving aeolotropism magnetic resistance permalloy film performance |
| 02/25/2009 | CN101373812A Element for storing electrical energy |
| 02/25/2009 | CN101373599A Magnetoresistive element, magnetoresistive head, and magnetic disk apparatus |
| 02/24/2009 | US7495870 Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus |
| 02/24/2009 | US7495541 Current sensor |
| 02/24/2009 | US7494896 Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer |
| 02/19/2009 | WO2009021854A1 Arrangement with magnetoresistive effect and method for producing the same |
| 02/19/2009 | WO2009021792A1 Displacement sensor |
| 02/18/2009 | EP1402584B1 Arrangement for reducing the piezoelectric effects in at least one electrical component which is sensitive to piezoelectric effects and arranged in an active layer of semiconductor material |
| 02/18/2009 | CN100463208C Systems for a magnetic memory device that includes a single word line transistor, reading and programming method thereof |
| 02/17/2009 | US7492022 Non-magnetic semiconductor spin transistor |
| 02/12/2009 | WO2009019949A1 Magnetic random access memory and method for manufacturing the same |
| 02/12/2009 | WO2009019948A1 Magnetic recorder and magnetization fixing method |
| 02/12/2009 | WO2009019947A1 Magnetic wall random access memory |
| 02/12/2009 | US20090042355 Semiconductor wafer and manufacturing method therefor |
| 02/12/2009 | US20090039345 Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity |
| 02/12/2009 | US20090038143 Method of manufacturing magneto-resistive device, magnetic head, head suspension assembly and magnetic disk apparatus |
| 02/11/2009 | CN100461419C Magnetic random access memory |
| 02/11/2009 | CN100461293C Semiconductor memory device provided with magneto-resistive element |
| 02/11/2009 | CN100461265C Magnetoresistive sensor having an anisotropic hard bias without a buffer layer and method for constructing sensor |
| 02/10/2009 | US7489482 Magnetic head of magnetoresistance effect type and process for production thereof |
| 02/10/2009 | US7489001 Magnetic thin-film memory device for quick and stable reading data |
| 02/05/2009 | US20090034134 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus |
| 02/04/2009 | CN101359716A Co(x)C(1-x)/Co/Si multilayered structure granule film material having room temperature low field large magnetic resistance effect |
| 02/04/2009 | CN101359715A Self-rotary transferring device and preparation thereof |
| 02/04/2009 | CN101359714A Magnetic field detecting element having thin stack with a plurality of free layers and thick bias magnetic layer |
| 02/04/2009 | CN101359476A Monitor element and magneto-resistance effect element substrate, and method of manufacturing monitor element |
| 02/04/2009 | CN100459205C Magnetic tunnel junction device and method for fabricating the same |
| 02/04/2009 | CN100458968C 磁存储装置 A magnetic storage device |
| 02/04/2009 | CN100458967C Magnetic storage cell and magnetic memory device using same |
| 02/03/2009 | US7486547 Semiconductor integrated circuit device and magnetic memory device capable of maintaining data integrity |
| 02/03/2009 | US7486486 Magnetic device to reduce reversal current in current-driven magnetic reversal and magnetic memory using same |
| 02/03/2009 | US7485938 Magneto-resistive effect element and magnetic memory |
| 02/03/2009 | US7485937 Tunnel junction device |
| 01/29/2009 | DE102008027728A1 Integrierte Schaltung mit über Abstandshalter definierter Elektrode Integrated circuit with spacers defined electrode |
| 01/29/2009 | DE102007032867A1 Magnetoresistive Magnetfeldsensorstruktur Magnetoresistive magnetic field sensor structure |
| 01/29/2009 | DE102007032729A1 Hall generators arranged in the nuclear structure for thermal-regulation at low temperatures and current, comprise ferric oxide core, carrier plate and surface layer as coat surface layer of magnetic materials of aluminum/nickel/cobalt |
| 01/29/2009 | DE10150233B4 Dünnschichtbauelement mit einer in einer ersten Ebene über einem Substrat befindlichen resistiven dünnen Schicht With a thin-film component located in a first plane over a substrate resistive thin layer |
| 01/28/2009 | CN101355136A Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with cofege ferromagnetic layers |
| 01/28/2009 | CN101354945A Magnetic composite organic nanometer granule film with magnetoresistance effect and preparation method thereof |
| 01/28/2009 | CN100456595C Superconducting current limiting device with magnetic field assisted quenching |
| 01/28/2009 | CN100456511C CPP strucure magnetoresistance effect device and head slider |
| 01/28/2009 | CN100456385C Magnetoresistive random access memory with high selectivity |
| 01/28/2009 | CN100456384C Thermally-assisted magnetic writing using oxide layer and current-induced heating |
| 01/27/2009 | US7483291 Magneto-resistance effect element, magnetic memory and magnetic head |
| 01/27/2009 | US7483245 Magnetoresistance effect element, and magnetic head and magnetic recording and/or reproducing system utilizing the magnetoresistance element |
| 01/27/2009 | US7482176 Etch mask and method of forming a magnetic random access memory structure |
| 01/22/2009 | WO2009011216A1 Storage element and memory |
| 01/22/2009 | DE10202903B4 Magnetoresistive Speicherzelle mit polaritätsabhängigem Widerstand und Speicherzelle Magnetoresistive memory cell with polaritätsabhängigem resistance and memory cell |
| 01/22/2009 | DE102007032379B4 Magnettransistorstruktur Magnetic transistor structure |
| 01/22/2009 | DE10153658B4 Magnetoresistive Speicherzelle mit Anordnung zur Minimierung der Néel-Wechselwirkung zwischen zwei ferromagnetischen Schichten beiderseits einer nichtferromagnetischen Trennschicht und Verfahren zu Herstellung der magnetoresistiven Speicherzelle Magnetoresistive memory cell array to minimize the Néel interaction between the two ferromagnetic layers on either side of a non-ferromagnetic separating layer and process for producing the magnetoresistive memory cell |
| 01/21/2009 | EP2017635A1 Magnetic device |
| 01/21/2009 | EP1490877B1 Synthetic-ferrimagnet sense-layer for high density mram applications |
| 01/21/2009 | CN101351902A InSb thin film magnetic sensor and fabrication method thereof |
| 01/21/2009 | CN100454599C Spin-injection field effect transistor, magnetic ram, and reconfigurable logical circuit |
| 01/21/2009 | CN100454433C Write line design in MRAM and its manufacturing method |
| 01/21/2009 | CN100454432C Relayed electric pulse used in magnetic resistor |
| 01/20/2009 | US7480175 Magnetic tunnel junction device and writing/reading for said device |
| 01/20/2009 | US7479694 Membrane 3D IC fabrication |
| 01/15/2009 | US20090015969 Magnetic thin film, magnetoresistance effect device and magnetic device using the same |
| 01/15/2009 | US20090015244 Control element for a motor vehicle |
| 01/15/2009 | DE10209508B4 Verfahren zur Speicherung von Daten in einem MRAM-Datenspeicher A method of storing data in a data memory MRAM |
| 01/14/2009 | EP2015377A1 Method for manufacturing magnetoresistance element and apparatus for manufacturing magnetoresistance element |
| 01/14/2009 | CN101345287A Method for regulating resistivity of polycrystal Fe3O4 thin-film material |
| 01/14/2009 | CN101345286A Method for improving stability of bias field in magnetic multilayer film structure |
| 01/14/2009 | CN101345285A Low-power consumption magnetosensitive element for telemetering water meter and production technique thereof |
| 01/14/2009 | CN101345117A Magnetic resistor thin-film material used for magnetic electronic compass and preparation method thereof |
| 01/14/2009 | CN101345079A Magnetoresistive device |
| 01/14/2009 | CN100452471C Self-rotary valve electromagnetic resistor based on hard magnetic material and its production |
| 01/14/2009 | CN100452233C Spin-injection magnetic random access memory and write-in method |
| 01/13/2009 | US7477567 Memory storage device with heating element |
| 01/13/2009 | US7477538 Magnetic random access memory |
| 01/13/2009 | US7477491 GMR device having an improved free layer |
| 01/13/2009 | US7476953 Integrated sensor having a magnetic flux concentrator |
| 01/13/2009 | US7476919 MRAM cell structure and method of fabrication |
| 01/13/2009 | US7476413 Low magnetization materials for high performance magnetic memory devices |
| 01/13/2009 | US7476329 Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices |
| 01/08/2009 | WO2009004714A1 Method for manufacturing magnetoresistive effect element and magnetic head |
| 01/08/2009 | US20090009914 Semiconductor Device Using Locating and Sign of the Spin of Electrons |
| 01/07/2009 | EP2011172A1 Lay out with a magnetoresistive effect and its usesuse thereof |
| 01/07/2009 | CN100449814C Magneto-resistance effect element, magnetic memory and magnetic head |
| 01/07/2009 | CN100449770C Intrgrated magnetoresistive semiconductor memory arrangement |
| 01/07/2009 | CN100449638C MTJ MRAM parallel-parallel architecture |
| 01/06/2009 | US7474090 Position sensor and assembly |
| 01/06/2009 | US7473951 Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same |
| 01/06/2009 | US7473646 Dry etching method and production method of magnetic memory device |
| 01/02/2009 | DE102008028934A1 Integrierte Schaltung mit Vertikaler Diode Integrated circuit with vertical diode |
| 12/31/2008 | WO2009001706A1 Magnetoresistive element and magnetic random access memory |
| 12/31/2008 | WO2009001160A1 Method for low frequency noise cancellation in magneto-resistive mixed sensors |
| 12/31/2008 | WO2008120118A3 Magneto-resistive sensor |
| 12/31/2008 | CN101335325A Magneto-resistive effect device of the cpp structure, and magnetic disk system |
| 12/31/2008 | CN100448015C Systems and methods for a magnetic memory device that includes two word line transistors |
| 12/31/2008 | CN100447892C Magnetic storage device with soft reference layer |
| 12/31/2008 | CN100447891C Low Power MRAM memory array |
| 12/31/2008 | CN100447570C Acceleration sensor and magnetic disk drive device |
| 12/30/2008 | US7471492 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus |
| 12/30/2008 | US7471491 Magnetic sensor having a frequency filter coupled to an output of a magnetoresistance element |
| 12/30/2008 | US7470963 Magnetoresistive element and magnetic memory |
| 12/30/2008 | US7470552 Method for production of MRAM elements |