| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 06/18/2009 | US20090154225 Thin film magnetic memory device having a highly integrated memory array |
| 06/17/2009 | EP2071350A1 Magnetism detecting apparatus |
| 06/17/2009 | EP2071348A1 Magnetic detector |
| 06/17/2009 | CN101459218A Annular semiconductor device and producing method thereof |
| 06/17/2009 | CN101459217A Hall disc |
| 06/17/2009 | CN100502079C Current perpendicular plane magnetoresistive sensor |
| 06/17/2009 | CN100502078C Magnetoresistive sensor and Magnetoresistive head |
| 06/17/2009 | CN100502077C Three-dimensional magnetic direction sensor, and magneto-impedance sensor element |
| 06/17/2009 | CN100501865C 磁存储器 Magnetic memory |
| 06/16/2009 | US7547934 Magneto-resistive effect element and magnetic memory |
| 06/16/2009 | US7547559 Method for forming MRAM bit having a bottom sense layer utilizing electroless plating |
| 06/16/2009 | US7547480 Magnetic tunnel junction pressure sensors and methods |
| 06/11/2009 | WO2009072511A1 Non-volatile latch circuit |
| 06/11/2009 | US20090146233 Non-magnetic semiconductor spin transistor |
| 06/11/2009 | US20090146232 Magnetoresistive device |
| 06/10/2009 | CN101452991A Element magnetique a ecriture assistee thermiquement |
| 06/10/2009 | CN101452990A Magnetic random access memory, manufacturing method and programming method thereof |
| 06/10/2009 | CN100499197C Magnetic tunnel structure suitable for device and its use |
| 06/09/2009 | USRE40725 Flat-band structure in which energy dispersion of electrons has little wave number dependency |
| 06/04/2009 | WO2009069672A1 Sputtering apparatus, and filming method |
| 06/04/2009 | US20090141408 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| 06/04/2009 | US20090140358 Magnetoresistive element |
| 06/04/2009 | DE102008054314A1 Integrierter lateraler Kurzschluss für eine vorteilhafte Modifizierung einer Stromverteilungsstruktur für magnetoresistive XMR-Sensoren Integrated lateral short for a beneficial modification of a current distribution structure for magnetoresistive XMR sensors |
| 06/03/2009 | EP1543566A4 Thermally stable magnetic element utilizing spin transfer and an mram device using the magnetic element |
| 06/03/2009 | CN101447550A Magneto-resistive effect device of the cpp type, and magnetic disk system |
| 06/03/2009 | CN100495755C Magnetoresistive sensor having an anistropic pinned layer for pinning improvement and its manufacture method |
| 06/03/2009 | CN100495723C Forming method for synthetic antiferromagnet structures for use in MTJS in MRAM technology |
| 06/03/2009 | CN100495044C Magnetic sensor |
| 06/02/2009 | US7542335 Magnetic storage device using ferromagnetic tunnel junction element |
| 06/02/2009 | US7542248 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system |
| 06/02/2009 | US7542247 Magnetic disk apparatus |
| 05/28/2009 | WO2009067594A1 Method of forming a magnetic tunnel junction structure |
| 05/27/2009 | EP2063229A1 Magnetic field sensor system |
| 05/27/2009 | EP1540362B1 Magnetic sensing device |
| 05/27/2009 | CN100492529C Magnetic rendom access stroage |
| 05/27/2009 | CN100492528C Magnetoresistance device of soft reference layer containing embedded conductor |
| 05/26/2009 | US7538987 CPP spin-valve element |
| 05/21/2009 | US20090128282 Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors |
| 05/21/2009 | US20090128136 Device and process for non-contacting determination of a state variable, in particular the position, of at least one pipeline pig |
| 05/20/2009 | EP2060875A1 Physical quantity measuring apparatus and signal processing method thereof |
| 05/20/2009 | EP1633007B1 Magnetoresistance effect device and method of production of the same |
| 05/20/2009 | DE102004015611B4 Vorrichtung und Verfahren zur Offset-Kompensation Apparatus and method for offset compensation |
| 05/20/2009 | CN101438178A Magnetic device |
| 05/20/2009 | CN100490005C Multiposition magnetic memory |
| 05/19/2009 | US7535683 Magnetoresistive head with improved in-stack longitudinal biasing layers |
| 05/14/2009 | WO2009060749A1 Magnetoresistive element and magnetic random access memory |
| 05/13/2009 | EP1449239B1 Magneto-resistive bit structure and method of manufacturing therefor |
| 05/13/2009 | CN100487938C Non mask preparation method based on thin film multiple layer film nano magnetic electron device |
| 05/12/2009 | US7532504 Spin injection magnetic domain wall displacement device and element thereof |
| 05/12/2009 | US7532502 Spin injection magnetic domain wall displacement device and element thereof |
| 05/12/2009 | US7531882 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
| 05/07/2009 | WO2009058290A1 Magnetic field angular sensor with a full angle detection |
| 05/07/2009 | WO2009057504A1 Magnetoresistive element, magnetic random access memory, and initialization method thereof |
| 05/07/2009 | WO2009057428A1 Magnetoresistive effect memory device |
| 05/07/2009 | US20090115404 Hall effect methods and systems |
| 05/07/2009 | DE102008051949A1 Integrierte Schaltung mit Belastungserfassungselement Integrated circuit with load sensing element |
| 05/06/2009 | EP2056370A2 Vortex spin momentum transfer magnetotresistive device |
| 05/06/2009 | EP1486983B1 Magnetic storage device using ferromagnetic tunnel junction element |
| 05/06/2009 | CN101427395A Lay out with a magnetoresistive effect and its usesuse thereof |
| 05/06/2009 | CN101427394A Thin film 3 axis fluxgate and the implementation method thereof |
| 05/06/2009 | CN101423979A Nanocrystal for two-phase coexistent of barium titanate and ferrate and preparation method thereof |
| 05/06/2009 | CN100485805C Magnetic random access storage |
| 05/05/2009 | US7527983 Ferromagnetic material |
| 04/30/2009 | WO2009054183A1 Spin valve element, and its driving method |
| 04/30/2009 | WO2009054182A1 Spin-valve element and its manufacturing method |
| 04/30/2009 | WO2009054180A1 Magnetoresistive effect element and magnetic random access memory |
| 04/30/2009 | WO2009054062A1 Magnetic tunnel junction element with megnetization free layer having sandwich structure |
| 04/30/2009 | WO2008087345A3 Multilayer magnetic device, process for the production thereof, magnetic field sensor, magnetic memory and logic gate using such a device |
| 04/30/2009 | US20090109740 Semiconductor device using magnetic domain wall movement |
| 04/30/2009 | DE102006028520B4 Stromsensor mit einem Hall-Element Current sensor with a Hall element |
| 04/30/2009 | DE102006024722B4 Magnetfelddetektor sowie Verfahren zu seiner Herstellung Magnetic field detector, as well as method for its preparation |
| 04/29/2009 | EP2053644A1 Oxidation method and oxidation apparatus |
| 04/29/2009 | EP2053613A1 Synthetic-ferrimagnet sense-layer for high density MRAM applications |
| 04/29/2009 | CN101421635A Magnetic sensor and method for fabricating the same |
| 04/29/2009 | CN101419940A Method for making memory cell assembly and the memory cell assembly |
| 04/29/2009 | CN100483544C Magnetic random access memory having a vertical write line |
| 04/29/2009 | CN100483543C Magnetic random access memory device |
| 04/29/2009 | CN100483542C Nonvolatile memory cell and non-volatile semiconductor memory device |
| 04/29/2009 | CN100483512C Method for manufacturing magnetoresistive element |
| 04/28/2009 | US7525773 Thin film magnetic head, head gimbal assembly, and hard disk drive having a dual spin-valve magneto-resistive element |
| 04/28/2009 | US7523664 Acceleration sensor and magnetic disk drive apparatus |
| 04/28/2009 | CA2447711C Azimuth meter |
| 04/23/2009 | WO2009051783A1 Wireless damage location sensing system |
| 04/23/2009 | WO2009050945A1 Spin-valve element |
| 04/23/2009 | WO2009050673A1 Magnetic field sensor |
| 04/23/2009 | US20090104345 Method for manufacturing a magnetoresistive-effect device |
| 04/22/2009 | CN101414657A Ferromagnetic tunnel junction element, magnetic recording device and magnetic memory device |
| 04/22/2009 | CN100481551C Storage device array magnetic bit with of with sharing one common line |
| 04/22/2009 | CN100481518C 自旋晶体管 Spin Transistors |
| 04/22/2009 | CN100481252C Buried magnetic tunnel junction storage cell and method |
| 04/21/2009 | US7522450 Magnetic storage cell, magnetic memory device and magnetic memory device manufacturing method |
| 04/21/2009 | US7522446 Heating MRAM cells to ease state switching |
| 04/21/2009 | US7522389 Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same |
| 04/21/2009 | US7522388 Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane |
| 04/21/2009 | US7521743 Nonvolatile magnetic memory device and photomask |
| 04/21/2009 | US7521264 Spin injection control using electric current |
| 04/16/2009 | WO2009048025A1 Nonvolatile solid state magnetic memory recording method and nonvolatile solid state magnetic memory |
| 04/16/2009 | WO2009047857A1 Amplifier using magnetoresistive element |
| 04/16/2009 | US20090097169 Magnetic sensor, magnetic field sensing method, semagnetic recording head, and magnetic memory device |
| 04/16/2009 | US20090097167 Magnetic sensor, magnetic field sensing method, semagnetic recording head, and magnetic memory device |