| Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001) |
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| 10/14/2009 | CN100550457C Methods and apparatus for thermally assisted programming of a magnetic memory device |
| 10/14/2009 | CN100550456C MgO dual-potential magnetic tunnel junction with quanta effect and its uses |
| 10/14/2009 | CN100550455C Nano magnetic memory device and method of manufacturing the same |
| 10/14/2009 | CN100550193C Storage device using resistance varying storage element and reference resistance value decision method for the device |
| 10/14/2009 | CN100549716C Laminated integral three-D magnetic field sensor and its preparation method and use |
| 10/13/2009 | US7602033 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer |
| 10/13/2009 | US7602000 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element |
| 10/13/2009 | US7601547 Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers |
| 10/08/2009 | WO2009122995A1 Magnetoresistive storage device |
| 10/08/2009 | WO2009122992A1 Magnetoresistance storage |
| 10/08/2009 | WO2009122990A1 Magnetoresistive effect element and magnetic random access memory |
| 10/07/2009 | EP2107623A1 Magnetic device including a magnetoresistive stack and at least one nanocontact |
| 10/07/2009 | EP2106612A2 Multilayer magnetic device, process for the production thereof, magnetic field sensor, magnetic memory and logic gate using such a device |
| 10/07/2009 | EP1399748B1 Semimanufacture for a sensor for measuring a magnetic field |
| 10/07/2009 | CN101552320A Method and system for providing a hard bias capping layer |
| 10/06/2009 | US7599155 Self-pinned CPP giant magnetoresistive head with antiferromagnetic film absent from current path |
| 10/06/2009 | US7598835 Magnetic sensor, production process of the magnetic sensor and magnetic array suitable for the production process |
| 10/06/2009 | US7598733 Position detector |
| 10/06/2009 | US7598579 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current |
| 10/06/2009 | US7598577 Magnetic memory device |
| 10/01/2009 | WO2009120487A1 Magnetic tunnel junction cell including multiple vertical magnetic domains |
| 10/01/2009 | WO2009119471A1 Magnetic sensor and magnetic encoder |
| 10/01/2009 | WO2009119081A1 Magneto-sensitive wire, magneto-impedance element and magneto-impedance sensor |
| 10/01/2009 | WO2009118129A1 Method for wet chemical etching |
| 10/01/2009 | US20090243009 Magnetic Tunnel Junction Cell Including Multiple Vertical Magnetic Domains |
| 09/30/2009 | CN101546808A Magnetoresistance effect element and magnetic random access memory |
| 09/30/2009 | CN101546807A Magnetoresistive element and magnetic memory |
| 09/30/2009 | CN101546600A Semiconductor integrated circuit |
| 09/30/2009 | CN101545914A Sensor module with mold encapsulation for applying a bias magnetic field |
| 09/29/2009 | US7596018 Spin memory with write pulse |
| 09/29/2009 | US7595633 Velocity measurement using magnetoresistive sensors |
| 09/24/2009 | US20090236646 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using the same |
| 09/24/2009 | DE102009012896A1 Magnetsensorbauelement und -verfahren Magnetic sensor device and method |
| 09/24/2009 | DE102008015118A1 Raumtemperatur-Quantendraht-(array)-Feldeffekt-(Leistungs-) Transistor "QFET", insbesondere magnetisch "MQFET", aber auch elektrisch oder optisch gesteuert Room-temperature quantum wire (array) -Feldeffekt- (power) transistor "QFET", in particular magnetic "MQFET", but also controlled electrically or optically |
| 09/23/2009 | EP1232400B1 Magnetoresistive angle sensor having several sensing elements |
| 09/23/2009 | CN101542767A Tunnel magnetoresistive thin film and magnetic multilayer formation apparatus |
| 09/23/2009 | CN101540337A Magnetic sensor and mobile information terminal apparatus |
| 09/23/2009 | CN100544050C Magnetoresistance effect element and its manufacturing method |
| 09/22/2009 | US7593195 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| 09/22/2009 | US7593193 Magnetoresistive element and magnetic memory device |
| 09/22/2009 | US7592189 MRAM and method of manufacturing the same |
| 09/17/2009 | WO2009114293A1 Method of forming a magnetic tunnel junction device |
| 09/17/2009 | US20090230954 Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor |
| 09/17/2009 | CA2716999A1 Method of forming a magnetic tunnel junction device |
| 09/16/2009 | EP1891452B1 Current sensor |
| 09/16/2009 | CN100541853C Magnetoresistive effect element, magnetic head, magnetic reproducing apparatus |
| 09/16/2009 | CN100541852C High-frequency oscillator |
| 09/16/2009 | CN100541851C Megnetoelectric changing element and its producing method |
| 09/16/2009 | CN100541819C Self-aligned conductive lines for FET-based magnetic random access memory devices and method of forming it |
| 09/16/2009 | CN100541652C Magnetic tunneling junction cell and magnetic random access memory |
| 09/15/2009 | US7589612 Current sensor |
| 09/15/2009 | US7589528 Magnetic sensor formed of magnetoresistance effect elements |
| 09/11/2009 | WO2009111197A1 Method of forming a magnetic tunnel junction structure |
| 09/11/2009 | WO2009110608A1 Process for producing magnetoresistive element and apparatus for producing magnetoresistive element |
| 09/11/2009 | WO2009110537A1 Mram mixed system |
| 09/11/2009 | WO2009110532A1 Semiconductor device |
| 09/11/2009 | WO2009110530A1 Semiconductor device |
| 09/11/2009 | WO2009110469A1 Method for manufacturing magnetic tunnel junction device and apparatus for manufacturing magnetic tunnel junction device |
| 09/11/2009 | WO2009110119A1 Ferromagnetic tunnel junction element and driving method of ferromagnetic tunnel junction element |
| 09/11/2009 | CA2716630A1 Method of forming a magnetic tunnel junction structure |
| 09/10/2009 | US20090227045 Method of forming a magnetic tunnel junction structure |
| 09/10/2009 | US20090225592 Suspended structures |
| 09/10/2009 | US20090225477 Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory |
| 09/10/2009 | US20090224500 Device for determining an angle of rotation |
| 09/10/2009 | US20090224341 Method of Forming a Magnetic Tunnel Junction Device |
| 09/10/2009 | US20090224340 Antiferromagnetic half-metallic semiconductor and manufacturing method therefor |
| 09/10/2009 | US20090224300 Nonvolatile magnetic memory device |
| 09/09/2009 | EP2099083A1 Thin film laminated body, thin film magnetic sensor using the thin film laminated body and method for manufacturing the thin film laminated body |
| 09/09/2009 | EP2098879A1 Magnetic detecting device, and its manufacturing method |
| 09/09/2009 | CN101526590A High-precision weak-magnetic field sensor based on giant magnetoresistance technology and preparation method thereof |
| 09/09/2009 | CN100539231C Magneto-resistive element |
| 09/09/2009 | CN100538875C Magnetoresistive element, magnetic memory cell, and magnetic memory device, and method for manufacturing the same |
| 09/09/2009 | CN100538873C System and method of four-conductor mangnetic random access memory cell and decoding scheme |
| 09/08/2009 | US7586301 Hall sensor arrangement and use of a hall sensor arrangement in a belt lock |
| 09/03/2009 | WO2009107780A1 Magnetoresistive memory device and operation method thereof |
| 09/03/2009 | WO2009107485A1 Method and apparatus for manufacturing magnetoresistance effect element |
| 09/03/2009 | US20090219754 Magnetoresistive device and magnetic memory using the same |
| 09/03/2009 | US20090217711 Position Sensing |
| 09/03/2009 | DE102009007479A1 Dünnfilm-Magnetsensor A thin film magnetic sensor |
| 09/02/2009 | EP2096689A1 Magnetoresistance effect element, magnetic sensor and method for manufacturing magnetoresistance effect element |
| 09/02/2009 | CN100536188C Method for manufacturing magnetic sensor, magnet array and preparation method thereof |
| 09/01/2009 | US7583480 Magnetoresistance effect element with nano-junction between free and pinned layers |
| 09/01/2009 | US7582892 Optically controlled switching methods based upon the polarization of electromagnetic radiation incident upon carbon nanotubes and electrical-switch systems using such switch devices |
| 09/01/2009 | US7582890 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof |
| 09/01/2009 | US7582570 Compositions for removal of processing byproducts and method for using same |
| 09/01/2009 | US7582489 Method for manufacturing magnetic sensor apparatus |
| 08/27/2009 | WO2009104428A1 Magnetic random access memory |
| 08/27/2009 | WO2009104427A1 Magnetic random access memory |
| 08/27/2009 | US20090212767 Remote transmitter for analogue gauges |
| 08/27/2009 | US20090212766 Joystick and method of manufacturing the same |
| 08/27/2009 | DE19820465B4 Magnetowiderstandseffektelement, und ein derartiges Element aufweisender Magnetkopf und magnetische Aufzeichnungseinrichtung A magnetoresistance effect element, and such an element having Direction magnetic head and magnetic recording means |
| 08/26/2009 | EP1282902B1 Magnetic multilayer structure with improved magnetic field range |
| 08/26/2009 | CN101517768A Magnetoresistive element manufacturing method, and multi-chamber apparatus for manufacturing the magnetoresistive element |
| 08/26/2009 | CN101517373A Physical quantity measuring apparatus and signal processing method thereof |
| 08/26/2009 | CN101514475A Method for preparing lead zirconate titanate-cobalt ferrite thick film |
| 08/26/2009 | CN100533801C Narrow gap current perpendicular plane (cpp) magnetoresistive sensor |
| 08/26/2009 | CN100533672C A method of improving surface planarity prior to MRAM bit material deposition |
| 08/26/2009 | CN100533595C Memory device |
| 08/26/2009 | CN100533589C Magnetic unit and memory |
| 08/20/2009 | WO2009101827A1 Magnetic domain wall motion device and magnetic random access memory |