Patents
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
04/2010
04/01/2010WO2010035873A1 Magnetic field detection element and signal transmission element
03/2010
03/31/2010CN101689601A Process for producing magnetic device, apparatus for producing magnetic device, and magnetic device
03/31/2010CN101689600A Magnetoresistive element and magnetic random access memory
03/31/2010CN101689599A Tunnel magnetoresistive thin film and magnetic multilayer film formation apparatus
03/30/2010US7687840 Crosspoint structure semiconductor memory device, and manufacturing method thereof
03/25/2010WO2010032825A1 Magnetic coupling-type isolator
03/25/2010WO2010032824A1 Magnetic coupling-type isolator
03/25/2010WO2010032823A1 Magnetic coupling-type isolator
03/25/2010WO2010032574A1 Magnetic recording element, magnetic memory cell, and magnetic random access memory
03/25/2010WO2010032527A1 Magnetoresistive effect film, magnetoresistive effect element comprising the same, and magnetic device
03/25/2010DE102008046920A1 Layer system based on a high magnetic field or semiconductor-hybrids, comprises layers of a half-metallic ferromagnet, in an alternating arrangement, and a semiconducting compound, or a semiconducting non-stoichiometric compound
03/24/2010EP2166581A2 Magnetoresistance effect device and method of production of the same
03/24/2010EP2165206A1 Method for low frequency noise cancellation in magneto-resistive mixed sensors
03/23/2010US7683444 Metamaterial structure has resonant and strip line elements comprising a photoconductive semiconductor material formed on substrate to induce negative permeability and negative permittivity in operating frequency range
03/18/2010WO2010029702A1 Method for manufacturing magnetoresistive element, and storage medium used in the manufacturing method
03/18/2010WO2010029701A1 Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
03/18/2010WO2010029684A1 Self-pinned spin valve magnetoresistance effect film and magnetic sensor using the same, and rotation angle detection device
03/17/2010EP2163908A1 Current sensor
03/16/2010US7679362 Hall-effect pressure switch
03/16/2010US7679155 Multiple magneto-resistance devices based on doped magnesium oxide
03/11/2010WO2010026861A1 Magnetic memory and method for manufacturing same
03/11/2010WO2010026831A1 Magnetic memory element and storage device using same
03/11/2010WO2010026802A1 FERROMAGNETIC PREFERRED GRAIN GROWTH PROMOTION SEED LAYER FOR AMORPHOUS OR MICROCRYSTALLINE MgO TUNNEL BARRIER
03/11/2010WO2010026725A1 Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
03/11/2010WO2010026705A1 Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
03/11/2010WO2010026704A1 Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
03/11/2010WO2010026703A1 Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
03/11/2010WO2010026667A1 Ferromagnetic preferred grain growth promotion seed layer for amorphous or microcrystalline mgo tunnel barrier
03/11/2010DE102009036175A1 MEMS-Silizium-Resonatorbauelemente und Verfahren Silicon MEMS resonator devices and methods
03/09/2010US7675718 Narrow track CPP head with bias cancellation
03/09/2010US7675129 Spin injection device, magnetic device using the same, magnetic thin film used in the same
03/09/2010US7674686 Transplanted magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer and method of making the same
03/04/2010WO2010025106A1 Symmetric stt-mram bit cell design
03/04/2010WO2010025105A1 Stt-mram bit cell having a rectangular bottom electrode plate
03/04/2010WO2010024201A1 Magnetoresistive element having multi-layered ferry structure, magnetic memory, and magnetic random access memory
03/04/2010WO2010024126A1 Magnetoresistive element, logic gate, logical gate operation method
03/04/2010WO2010023833A1 Magnetoresistive element, method for manufacturing same, and storage medium used in the manufacturing method
03/04/2010US20100052660 Portable electronic device with hall sensor
03/04/2010DE102008039425A1 Thin film electrical component i.e. sensor, arrangement for detection of beads on even receiving area of biochip, during e.g. examining of biological process in area of medical supply, involves assigning circuit of lines to matrix
03/03/2010EP2159858A1 Tunnel magnetoresistive thin film and magnetic multilayer formation apparatus
03/02/2010US7671433 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors
02/2010
02/25/2010WO2010021361A1 Negative resistance element using magnetoresistive effect
02/25/2010WO2010021213A1 Magnetoresistive storage device
02/25/2010US20100044680 Novel underlayer for high performance magnetic tunneling junction MRAM
02/24/2010EP2157436A1 Current sensor
02/24/2010EP1499905B1 Method and arrangement for protecting a chip and checking its authenticity
02/24/2010CN100592544C Magnetoresistive element and magnetic memory
02/24/2010CN100592419C Magnetic memory with spin-polarized current writing, using amorphous ferromagnetic alloys, and its writing method
02/23/2010US7667256 Integrated circuit arrangement having a plurality of conductive structure levels and capacitor, and a method for producing the integrated circuit arrangement
02/23/2010US7665573 Vehicle's steering wheel rotation angle sensing device
02/18/2010US20100041168 Methods of fabricating magnetic memory devices with thin conductive bridges
02/18/2010US20100039715 Reduced-voltage, linear motor systems and methods thereof
02/18/2010DE102009032042A1 System mit einer magnetischen Erfassungsschichtorientierung von 90 Grad System with a magnetic recording layer orientation of 90 degrees
02/16/2010US7663197 Magnetoresistive element
02/11/2010US20100034011 Multi-Terminal Resistance Device
02/11/2010US20100032778 Magnetic memory with separate read and write paths
02/10/2010EP2151665A1 Position detector employing magnetoresistive effect element
02/09/2010US7659562 Electric field read/write head and method of manufacturing same and data read/write device
02/04/2010WO2010013566A1 Magnetoresistive element, magnetic random access memory, and initialization method thereof
02/04/2010US20100030495 Hall Effect Helicopter Mast Torque Meter
02/03/2010CN101641807A Process for producing magnetic element
02/03/2010CN100587993C High magneto-resistance magnetic sensor and method for producing the magnetic sensor
02/02/2010US7656622 Tunnel magnetoresistance device with tunnel barrier layer containing residual carbon
01/2010
01/28/2010WO2010011495A2 Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
01/28/2010WO2010010872A1 Magnetic sensor and magnetic sensor module
01/28/2010US20100022030 Dry etch stop process for eliminating electrical shorting in mram device structures
01/28/2010US20100019331 Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
01/28/2010US20100019298 Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding
01/27/2010CN201392850Y Heat resistant hall element
01/27/2010CN201392849Y Package structure for high-sensitivity electronic element
01/27/2010CN100585898C Method for improving stability of bias field in magnetic multilayer film structure of CoFe/Cu/CoFe/IrMn spin valve structure
01/26/2010US7650684 Method for fabricating a magnetic head including a read sensor
01/21/2010WO2010007893A1 Magnetic random access memory and method for initializing thereof
01/21/2010WO2010007695A1 Spin valve element and its driving method and storage device employing them
01/21/2010WO2009078914A8 Magnetostrictive displacement transducer with phase shifted bias burst
01/21/2010US20100016796 Syringe Mechanism for Detecting Syringe Status
01/21/2010US20100013463 Rotation sensor
01/21/2010US20100013035 Integrated Circuit, Memory Module, and Method of Manufacturing an Integrated Circuit
01/20/2010CN101632183A Magnetic coupler element and magnetic coupling type isolator
01/20/2010CN100583482C Tunnel magnetoresistance effect film and magnetic device
01/14/2010WO2010004881A1 Magnetic random access memory, and initialization method and writing method for magnetic random access memory
01/14/2010US20100009467 Novel magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current
01/14/2010DE102009030020A1 Integrierte Sensor- und Magnetfeldkonzentratorvorrichtungen Integrated sensor and Magnetfeldkonzentratorvorrichtungen
01/14/2010DE102006008257B4 Magnetoresistives Mehrschichtensystem vom Spin Valve-Typ mit einer magnetisch weicheren Elektrode aus mehreren Schichten und dessen Verwendung The magnetoresistive multilayer system of spin valve type with a magnetically softer electrode composed of several layers and its use
01/13/2010EP2144295A2 Spin injection device having a shared superconductor electrode
01/13/2010CN101624701A Dry etching method for magnetic material
01/13/2010CN100580968C Magnetoresistive element and magnetic memory
01/07/2010WO2010002634A1 System and method to fabricate magnetic random access memory
01/07/2010WO2010002632A1 System and method to fabricate magnetic random access memory
01/07/2010WO2010001018A1 Three-layer magnetic element, method for the production thereof, magnetic field sensor, magnetic memory, and magnetic logic gate using such an element
01/07/2010US20100003834 Mram
01/07/2010DE10297743B4 Vorrichtung mit Magnetwiderstandseffekt Device with magnetic-resistance effect
01/07/2010DE102008037983A1 Magnetoresistiver Sensor mit Tunnelsperrschicht und Verfahren A magnetoresistive sensor with tunnel barrier layer and method
01/07/2010CA2727268A1 System and method to fabricate magnetic random access memory
01/06/2010CN101621113A Magnetic tunnel junction device, memory cell having the same, and method for fabricating the same
01/06/2010CN100578698C Inductance structure
01/05/2010US7642773 Magnetic sensor, production method thereof, rotation detection device, and position detection device
12/2009
12/31/2009US20090320569 Adjustable height liquid level management tools and systems
12/31/2009DE102008030332A1 Temperature based measuring signal minimizing method for spin-valve magnetic field sensor, involves adjusting temperature based giant magneto resistive ratio effects and intensity, so that intrinsic temperature compensation is produced
12/30/2009WO2009157101A1 Magnetic memory element and its driving method and nonvolatile memory device
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