Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Patents for H01L 43 - Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (12,001)
06/2010
06/16/2010CN101740714A Anisotropic magnetic resistance material containing diffusion impervious layers
06/16/2010CN101262040B Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method
06/16/2010CN101101959B Manufacturing method for magneto-resistance effect element
06/15/2010US7738781 Position detecting circuit and imaging apparatus
06/15/2010US7737515 Method of assembly using array of programmable magnets
06/10/2010WO2010065518A1 Methods for graphene-assisted fabrication of micro- and nanoscale structures and devices featuring the same
06/10/2010WO2010064564A1 Magnetoresistive element, method of producing same, and storage medium used in method of producing same
06/10/2010WO2010064476A1 Magnetic memory element and nonvolatile storage device
06/10/2010US20100140726 Method and system for providing magnetic elements having enhanced magnetic anisotropy and memories using such magnetic elements
06/09/2010CN1839322B 磁传感器 The magnetic sensor
06/09/2010CN1734662B Magnetic tunnel junction structures, magnetic random access memory cells employing the same and photomasks used in formation thereof
06/09/2010CN1542844B Semiconductor memory device comprising magneto resistive element and its manufacturing method
06/09/2010CN101727966A Information storage element and method of writing/reading information into/from information storage element
06/09/2010CN101276879B Double freedom layer vertical ferromagnetism tunnel junction structure
06/09/2010CN101202325B Magnetic storage element and memory
06/09/2010CN101156047B Position detector and positioning device
06/09/2010CN101154709B Magneto-resistance effect device and magnetic random access memory using the same
06/08/2010US7733692 Thin film magnetic memory device capable of conducting stable data read and write operations
06/08/2010US7733613 Method for manufacturing a magnetoresistive-effect device
06/08/2010US7733611 Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same
06/08/2010US7733210 Magnetic field detector and manufacturing method thereof
06/08/2010US7733082 Signal transmission device
06/08/2010US7732223 Magnetic memory device and method for manufacturing the same
06/03/2010WO2010062073A2 Magnetic information processing apparatus and manufacturing method thereof
06/03/2010US20100136713 Hafnium doped cap and free layer for mram device
06/03/2010US20100135068 Resistance-change memory device
06/03/2010US20100135067 Non-volatile memory with stray magnetic field compensation
06/03/2010US20100133632 Vertical hall sensor
06/02/2010CN101409326B Magnetoresistive effect element and magnetic random access memory
06/02/2010CN101345287B Method for regulating resistivity of polycrystal Fe3O4 thin-film material
06/01/2010US7728423 Semiconductor device having step-wise connection structures for thin film elements
05/2010
05/27/2010DE102009050427A1 Magnetsensorsystem und Verfahren Magnetic sensor system and method
05/26/2010EP2190006A1 Compound semiconductor substrate, process for producing compound semiconductor substrate, and semiconductor device
05/26/2010EP2188854A1 Displacement sensor
05/26/2010CN1975863B Current-perpendicular-to-the-plane structure magnetoresistive element and head slider including the same
05/26/2010CN1610000B Magnetoresistive element, magnetic memory cell, and magnetic memory device
05/26/2010CN1591674B Magnetoresistive element, magnetic memory cell, and magnetic memory device
05/26/2010CN1572001B Magneto-resistive bit structure and method of manufacturing therefor
05/26/2010CN101095246B Method for producing magnetic multilayer film
05/25/2010US7724558 Magnetic signal transmission line
05/25/2010US7724481 Magnetic sensing element including free magnetic layer or pinned magnetic layer having two sublayers that are composed of different CoMn-based heusler alloys
05/25/2010US7723827 Semiconductor storage device and production method therefor
05/20/2010WO2010056721A1 Magnetic memory cells with radial barrier
05/20/2010US20100123208 MR device with synthetic free layer structure
05/20/2010US20100123133 Spin-polarised charge-carrier device
05/19/2010CN101710525A Ultra-high sensitive magneto-resistance film material and preparation method thereof
05/18/2010US7719885 Thin film magnetic memory device having a highly integrated memory array
05/18/2010US7719799 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus
05/14/2010WO2010053187A1 Information recording device
05/14/2010WO2010053039A1 Initialization method for a magnetic storage element
05/12/2010EP2184381A1 Dry etching method for magnetic material
05/12/2010EP2184380A1 Dry etching method for magnetic material
05/12/2010CN1801390B magnetic resistance type random access memory and manufacture method thereof
05/12/2010CN1783335B Storage unit
05/12/2010CN1637927B Magnetic random access memory (MRAM) and method of manufacturing the same
05/12/2010CN1607607B Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same
05/12/2010CN101000821B Close-shaped magnetic multi-layer film and preparation method and use thereof
05/11/2010US7714399 Magnetic memory element and magnetic memory apparatus
05/11/2010US7713364 Manganese alloy sputtering target and method for producing the same
05/06/2010WO2010050125A1 Cpp-gmr element, tmr element, and magnetic recording/reproduction device
05/06/2010WO2010011495A3 Hall-effect magnetic sensors with improved magnetic responsivity and methods for manufacturing the same
05/06/2010US20100114523 Steering wheel position sensor
05/06/2010US20100109712 Nanodevices for Spintronics and Methods of Using Same
05/06/2010US20100109061 Semiconductor memory device and manufacturing method for semiconductor memory device
05/05/2010CN1790044B Magnetic sensor, method for measuring external magnetic field and apparatus for applying the magnetic sensor
05/05/2010CN1783333B Magnetic random storage element
05/05/2010CN1704766B Hall integrated circuit with low working voltage and voltage regulator thereof
05/05/2010CN1571582B Mini-acoustical device based on magneto resistor effect
05/05/2010CN1521760B Film magnetic memory device having programmed element
05/04/2010US7710690 Magneto-resistance effect element capable of obtaining a reproducing signal with a high quality
05/04/2010US7710109 Method and apparatus for position detection
04/2010
04/29/2010WO2010048259A1 Magnetic tunnel junction and method of fabrication
04/29/2010WO2010047276A1 Magnetoresistance element, mram, and magnetoresistance element initialization method
04/29/2010US20100103720 Biosensor and sensing cell array using the same
04/29/2010US20100102405 St-ram employing a spin filter
04/29/2010DE10155424B4 Verfahren zur homogenen Magnetisierung eines austauschgekoppelten Schichtsystems einer digitalen magnetischen Speicherzelleneinrichtung A method for homogeneous magnetization of a layer exchange coupled system of a digital magnetic memory cell device
04/28/2010EP2179457A1 Arrangement with magnetoresistive effect and method for producing the same
04/28/2010EP2179456A2 Hall effect methods and systems
04/28/2010CN1729537B Magnetoresistive random access memory with reduced switching field
04/28/2010CN1535467B Memory device, method for manufacturing memory device and method for programming the memory device
04/28/2010CN1455414B Resistance crosspoint storage unit array having cross-coupling latch reading amplifier
04/28/2010CN1451181B Method and device for transferring spin-polarized charge carriers
04/28/2010CN1384503B Magnetic resistance element, memory unit with the element and memory constituted by the memory units
04/27/2010US7705584 Magnetic sensor
04/22/2010WO2010044134A1 Process for producing magnetoresistance effect element and program for producing magnetoresistance effect element
04/21/2010CN1783334B Magnetic memory and method of manufacturing the same
04/20/2010US7700982 Magnetoresistive effect element and magnetic memory device
04/15/2010WO2010041719A1 Storage element
04/15/2010WO2010041632A1 Semiconductor device
04/15/2010WO2010003395A3 Triple-gate or multi-gate component based on the tunneling effect
04/15/2010US20100089177 Tensioner sensor (bts)
04/08/2010WO2010038823A1 Screening method employed in magnetoresistive storage device, and magnetoresistive storage device
04/08/2010US20100085056 Magneto-resistance based topography sensing
04/08/2010DE102007003382B4 Sensor, Vorrichtung mit einem Sensor, Verfahren zum Detektieren einer defekten Vorrichtung und Verwendung eines Sensors Sensor device with a sensor method of detecting a defective device, and using a sensor
04/07/2010EP2172969A1 Storage element and memory
04/07/2010CN101692480A Method for improving stability of bias field in multi-layer membrane structure in Co/Cu/NiFe/FeMn spin valve structure
04/06/2010US7692902 Tunnel magnetoresistance effect device, and a portable personal device
04/06/2010US7691215 Compounds and methods of fabricating compounds exhibiting giant magnetoresistance and spin-polarized tunneling
04/01/2010WO2010036581A1 Magnetic element utilizing protective sidewall passivation
04/01/2010WO2010036573A1 Reducing spin pumping induced damping of a free layer of a memory device
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