| Patents for H01L 33 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (99,364) |
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| 01/10/2002 | US20020004251 Method of making a semiconductor radiation emitter package |
| 01/10/2002 | US20020003284 Amorphous aluminum nitride emitter |
| 01/10/2002 | US20020003237 Minority carrier semiconductor devices with improved reliabilty |
| 01/10/2002 | US20020003234 Nitride based semiconductor light emitting device |
| 01/10/2002 | US20020003233 Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device |
| 01/10/2002 | CA2667783A1 A laser diode and method of manufacture of the diode using a surface gallium nitride seed |
| 01/10/2002 | CA2632737A1 A laser diode and method of manufacture of the diode using a surface gallium nitride seed |
| 01/09/2002 | EP1170807A1 Light-emitting element matrix array |
| 01/09/2002 | EP1170613A2 Optical connector |
| 01/09/2002 | EP1170612A2 Hybrid optical and electrical connector |
| 01/09/2002 | EP1170610A2 Opto-electrical hybrid connector and process for assembling the same |
| 01/09/2002 | EP1169965A1 Pulse oximetry sensor compatible with multiple pulse oximetry systems |
| 01/09/2002 | EP1169757A1 Vcsel power monitoring system using plastic encapsulation techniques |
| 01/09/2002 | EP1169735A1 Semiconductor radiation emitter package |
| 01/09/2002 | EP1169668A1 Indicators and illuminators using a semiconductor radiation emitter package |
| 01/09/2002 | CN2470961Y Water-proof structure improvement of light-emitting diode |
| 01/09/2002 | CN1330805A Method for wavelength compensation in semiconductor manufacturing |
| 01/09/2002 | CN1330506A 柔性有机电致发光器件 Flexible organic electroluminescent devices |
| 01/09/2002 | CN1330416A Semiconductor light-emitting component and its manufacturing mehtod and semiconductor luminescent device |
| 01/09/2002 | CN1330415A High-brightness LED with distributed contact layer |
| 01/08/2002 | US6337870 Semiconductor laser having recombination layer stripes in current blocking structure |
| 01/08/2002 | US6337750 Image reading system |
| 01/08/2002 | US6337536 White color light emitting diode and neutral color light emitting diode |
| 01/08/2002 | US6337493 Nitride semiconductor device |
| 01/08/2002 | US6337223 Semiconductor optical device and method for fabricating the same |
| 01/08/2002 | US6337150 Light-emitting compound and display device adopting light-emitting compound as color-developing substance |
| 01/03/2002 | WO2002103814A1 Gan based led formed on a sic substrate |
| 01/03/2002 | WO2002001649A1 Optoelectric element |
| 01/03/2002 | WO2002001622A2 Novel non-crystalline oxides for use in microelectronic, optical, and other applications |
| 01/03/2002 | WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 01/03/2002 | WO2002001604A2 Optoelectronic device with integrated wavelength filtering |
| 01/03/2002 | WO2001041225A3 Enhanced light extraction in leds through the use of internal and external optical elements |
| 01/03/2002 | US20020002003 Hybrid connector |
| 01/03/2002 | US20020001864 Heating group III element nitride layers on a recessed surface in a hydrogen atmosphere and using an aluminum layer as an etching stopper; controlled in current confinement and transverse move |
| 01/03/2002 | US20020001779 Method for performing photolithography |
| 01/03/2002 | US20020001193 LED illumination system and manufacturing method thereof |
| 01/03/2002 | US20020001192 Light emitting device |
| 01/03/2002 | US20020000982 Modulation circuit and image display using the same |
| 01/03/2002 | US20020000643 Devices related to electrode pads for p-type group iii nitride compound semiconductors |
| 01/03/2002 | US20020000563 Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
| 01/03/2002 | US20020000559 Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device |
| 01/03/2002 | US20020000558 Gallium nitride based light emitting element |
| 01/03/2002 | US20020000546 Light emitting semiconductor devices |
| 01/02/2002 | EP1168677A2 Optical data bus communication in an artificial satellite |
| 01/02/2002 | EP1168462A1 Light-emitting thyristor matrix array and driver circuit |
| 01/02/2002 | EP1168461A2 Light source |
| 01/02/2002 | EP1168460A2 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
| 01/02/2002 | EP1167416A1 Urethane resin composition for sealing optoelectric conversion devices |
| 01/02/2002 | EP1167048A1 Method for setting quantity of light of light-emitting element array |
| 01/02/2002 | EP1166604A1 Supply assembly for a led lighting module |
| 01/02/2002 | EP1166410A2 Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication |
| 01/02/2002 | EP1166368A1 A method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| 01/02/2002 | EP0801818B1 Light-emitting diode with divided light-emitting regions |
| 01/02/2002 | CN1329365A Method for manufacturing optical illuminating device |
| 01/02/2002 | CN1329364A Optical illuminating device, its manufacturing methd and illuminator used the same |
| 01/02/2002 | CN1329261A Platform and optical module, and producing method and optical transmission device |
| 01/02/2002 | CN1077286C 红外光学系统 Infrared optical system |
| 01/01/2002 | US6335559 Semiconductor device cleave initiation |
| 01/01/2002 | US6335548 Semiconductor radiation emitter package |
| 01/01/2002 | US6335547 Epitaxial wafer for infrared light-emitting device and light-emitting device using the same |
| 01/01/2002 | US6335546 Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
| 01/01/2002 | US6335545 Light emitting diode element |
| 01/01/2002 | US6335219 Thermally treating light emitting layer; cooling to form strained layers at boundaries between main phase and sub-phases |
| 01/01/2002 | US6335218 Method for fabricating a group III nitride semiconductor device |
| 01/01/2002 | US6335217 Preparing a substrate; forming a titanium layer on substrate; forming a gan (gallium nitride) semiconductor and/or its related material's layer |
| 01/01/2002 | US6335212 Method of fabricating a semiconductor light-emitting element |
| 12/27/2001 | WO2001099208A2 Thermal treatment of solution-processed organic electroactive layer in organic electronic device |
| 12/27/2001 | WO2001098822A1 Liquid crystal display device |
| 12/27/2001 | WO2001069300A8 High efficiency non-imaging optics |
| 12/27/2001 | US20010055887 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device |
| 12/27/2001 | US20010055871 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same |
| 12/27/2001 | US20010055660 Bulk single crystal gallium nitride and method of making same |
| 12/27/2001 | US20010055458 Sheet-like light emitting display and method |
| 12/27/2001 | US20010055454 Fiber carrying light emitting elements having patterned insulation |
| 12/27/2001 | US20010055112 Reference wavelength light generating apparatus |
| 12/27/2001 | US20010054763 Contact electrode for n-type gallium nitride-based compound semiconductor and method for forming the same |
| 12/27/2001 | US20010054717 Group-III nitride semiconductor light-emitting device and production method thereof |
| 12/27/2001 | US20010054716 Opto-electronic device with self-aligned ohmic contact layer |
| 12/27/2001 | CA2413069A1 Thermal treatment of solution-processed organic electroactive layer in organic electronic device |
| 12/26/2001 | CN2468158Y Light-emitting diode (LED) |
| 12/26/2001 | CN1328629A Illumination system having an array of linear prisms |
| 12/26/2001 | CN1076878C Semiconductor laser device and method for fabricating the same |
| 12/25/2001 | US6333522 Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
| 12/25/2001 | US6332703 Lighting device |
| 12/25/2001 | US6332661 Constant current driving apparatus and constant current driving semiconductor integrated circuit |
| 12/20/2001 | WO2001097295A2 Micro-size led and detector arrays for minidisplay hyper-bright light emitting diodes, lighting, and uv detector and imaging sensor applications |
| 12/20/2001 | WO2001097287A1 Led lamp |
| 12/20/2001 | WO2001073735A3 Matrix structure based led array |
| 12/20/2001 | WO2001050500A3 White light source |
| 12/20/2001 | WO2000017103A9 Inventory control |
| 12/20/2001 | US20010052600 Light irradiating device manufacturing method |
| 12/20/2001 | US20010052589 Electroluminescent phosphor powders, methods for making phosphor powders and devices incorporating same |
| 12/20/2001 | DE10120295A1 Vapor deposition apparatus for producing stacked layer structure, includes first and second run lines, vent lines, and line-switching mechanism |
| 12/20/2001 | DE10119506A1 Vorrichtung zum Erzeugen von Licht mit einer Referenzwellenlänge An apparatus for generating light having a reference wavelength |
| 12/20/2001 | CA2411219A1 Led lamp |
| 12/20/2001 | CA2350772A1 Semiconductor lasers with varied quantum well thickness |
| 12/19/2001 | EP1163711A1 Encapsulated optoelectronic devices with controlled properties |
| 12/19/2001 | EP1163702A1 Multi-layer highly reflective ohmic contacts for light-emitting semiconductor devices |
| 12/19/2001 | CN1327706A Luminescent array, wavelength-converting sealing material and light source |
| 12/18/2001 | US6331450 Method of manufacturing semiconductor device using group III nitride compound |