Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2014
07/10/2014US20140191297 Strained finfet with an electrically isolated channel
07/10/2014US20140191296 Self-aligned dielectric isolation for finfet devices
07/10/2014US20140191295 Dummy gate interconnect for semiconductor device
07/10/2014US20140191293 Methods for manufacturing well structures for low-noise chemical sensors
07/10/2014US20140191288 Semiconductor device and method for manufacturing semiconductor device
07/10/2014US20140191287 Compressive strained iii-v complementary metal oxide semiconductor (cmos) device
07/10/2014US20140191286 Compressive strained iii-v complementary metal oxide semiconductor (cmos) device
07/10/2014US20140191285 Semiconductor device having epitaxial structures
07/10/2014US20140191284 Group iii nitrides on nanopatterned substrates
07/10/2014US20140191283 Group iii nitrides on nanopatterned substrates
07/10/2014US20140191281 High voltage semiconductor device
07/10/2014US20140191251 Silicon carbide semiconductor device and method of manufacturing the same
07/10/2014US20140191250 Method for manufacturing semiconductor device, and semiconductor device
07/10/2014US20140191248 Semiconductor device
07/10/2014US20140191247 Semiconductor device
07/10/2014US20140191244 METHOD FOR CONDUCTIVITY CONTROL OF (Al,In,Ga,B)N
07/10/2014US20140191242 Method and system for a gallium nitride vertical transistor
07/10/2014US20140191240 High Electron Mobility Transistor and Method of Forming the Same
07/10/2014US20140191239 Display device
07/10/2014US20140191237 Crystalline thin-film transistor
07/10/2014US20140191236 Methods and Devices for Fabricating and Assembling Printable Semiconductor Elements
07/10/2014US20140191232 Semiconductor device
07/10/2014US20140191230 Semiconductor device
07/10/2014US20140191229 Semiconductor structure including a zirconium oxide material
07/10/2014US20140191228 Thin film transistor, method of fabricating the same, and display apparatus having the same
07/10/2014US20140191199 Nanoscale qca-based logic gates in graphene technology
07/10/2014US20140191198 Graphene electronic devices and methods of manufacturing the same
07/10/2014US20140191197 Amorphous multi-component metallic thin films for electronic devices
07/10/2014US20140191178 Method of fabricating a vertical mos transistor
07/10/2014DE112012004373T5 Verfahren zur trennung eines trägersubstrats von einem festphasengebundenen wafer und verfahren zur herstellung einer halbleitervorrichtung A method of separating a supporting substrate from a solid phase-bound wafer and method for manufacturing a semiconductor device
07/10/2014DE112012004061T5 Halbleitervorrichtung Semiconductor device
07/10/2014DE112011105681T5 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
07/10/2014DE10392313B4 Auf Galliumnitrid basierende Vorrichtungen und Herstellungsverfahren Gallium nitride-based devices and manufacturing processes
07/10/2014DE102011075888B4 Halbleitervorrichtung mit mindestens einem Kontakt und Herstellungsverfahren für eine Halbleitervorrichtung mit mindestens einem Kontakt A semiconductor device having at least one contact and manufacturing method of a semiconductor device having at least one contact
07/10/2014DE102011052605B4 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device
07/10/2014DE102011010362B4 Halbleiterbauelement mit Durchkontaktierung und Herstellungsverfahren A semiconductor device having through-hole plating and manufacturing processes
07/10/2014DE102010026996B4 Halbleitervorrichtung Semiconductor device
07/10/2014DE102009058428B4 Halbleitervorrichtung mit anorganischer Überzugsschicht, integrierter Schaltungschip mit dieser Halbleitervorrichtung und Verfahren zur Herstellung dieser Halbleitervorrichtung A semiconductor device comprising an inorganic coating layer, an integrated circuit chip with the semiconductor device and methods for manufacturing this semiconductor device,
07/10/2014DE102009042514B4 Verfahren und Vorrichtung mit SOI-Substratdotierung Method and apparatus SOI substrate doping
07/10/2014DE102009023417B4 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
07/10/2014DE102009008504B4 Ein Halbleiterbauelement und Verfahren A semiconductor device and method
07/10/2014DE102009008182B4 Empfangsvorrichtung mit Impedanzsteuerschaltung Receiving apparatus with impedance control circuit
07/10/2014DE102006053145B4 Halbleitervorrichtung mit Trennungsbereich Semiconductor device separation region
07/10/2014DE102006035669B4 Transistor mit einem verformten Kanalgebiet, das eine leistungssteigernde Materialzusammensetzung aufweist und Verfahren zur Herstellung Transistor having a strained channel region having a performance-enhancing material composition and process for preparing
07/09/2014EP2753099A1 Acoustic sensor and method for manufacturing same
07/09/2014EP2752880A2 Graphene electronic devices and methods of manufacturing the same
07/09/2014EP2752879A1 Thin film transistor array panel
07/09/2014EP2752875A1 Semiconductor device
07/09/2014EP2751840A1 A non-volatile memory cell having a floating gate and a coupling gate with improved coupling ratio therebetween
07/09/2014CN203707142U Mosfet功率器件的终端结构 Terminal structure Mosfet power devices
07/09/2014CN203707141U 集成梳状栅纵向沟道soi ldmos单元 Integrated comb gate longitudinal channel soi ldmos unit
07/09/2014CN203707140U 具有场板终端保护的4H-SiC肖特基源漏MOSFET器件 Having a field plate terminal protection 4H-SiC Schottky source-drain MOSFET devices
07/09/2014CN203707139U 提高压电极化强度的新型hemt Raise new hemt piezoelectric polarization intensity
07/09/2014CN203707138U Mosfet功率器件的终端结构 Terminal structure Mosfet power devices
07/09/2014CN203707132U 阵列基板、显示面板 The array substrate, the display panel
07/09/2014CN1914115B 微机电设备以及制造微机电设备的方法 MEMS device and method of manufacturing MEMS devices
07/09/2014CN103918085A 芯片二极管以及二极管封装件 Chip diode and diode package
07/09/2014CN103918084A 半导体装置 Semiconductor device
07/09/2014CN103918083A 非平面晶体管的源极/漏极触点 Non-planar transistor source / drain contacts
07/09/2014CN103918082A 肖特基势垒二极管 Schottky barrier diodes
07/09/2014CN103918081A 制造半导体器件的方法 The method of manufacturing a semiconductor device
07/09/2014CN103918080A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/09/2014CN103918079A 包括具有改进布局的晶体管的高电流密度功率模块 Including high current density power module with improved layout of transistors
07/09/2014CN103918078A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
07/09/2014CN103918062A 用于制造半导体器件的方法 The method for manufacturing a semiconductor device
07/09/2014CN103915512A 具有金红石结晶相二氧化钛介电膜的半导体器件 A semiconductor device having a rutile crystalline phase titanium dioxide dielectric film
07/09/2014CN103915511A 肖特基势垒二极管及其制造方法 Schottky barrier diode and its manufacturing method
07/09/2014CN103915510A 一种多栅薄膜晶体管、阵列基板及显示装置 A multi-gate thin film transistor array substrate and a display device
07/09/2014CN103915509A 一种薄膜晶体管、阵列基板及显示装置 A thin film transistor array substrate and a display device
07/09/2014CN103915508A 一种底栅结构的氧化物薄膜晶体管及其制作方法 Oxide thin film transistor and method of making a bottom gate structure
07/09/2014CN103915507A 氧化物薄膜晶体管结构及制作氧化物薄膜晶体管的方法 Oxide thin film structure and production method of an oxide thin film transistor transistor
07/09/2014CN103915506A 一种具有纵向npn结构的双栅ldmos器件 A dual-gate device ldmos vertical npn structure has
07/09/2014CN103915505A 一种槽栅槽源soi ldmos器件 One kind of trench-gate devices trough source soi ldmos
07/09/2014CN103915504A 一种鳍型半导体结构及其成型方法 One kind of fin-type semiconductor structure and method of forming
07/09/2014CN103915503A 一种横向高压mos器件及其制造方法 A widthwise high pressure mos device and manufacturing method thereof
07/09/2014CN103915502A 半导体器件及制造方法 Semiconductor device and method of manufacture
07/09/2014CN103915501A 由悬空硅进行电介质隔离的finfet及其制造方法 Finfet and manufacturing method by dangling silicon dielectric isolation
07/09/2014CN103915500A 垂直功率mosfet Vertical power mosfet
07/09/2014CN103915499A 半导体器件和制造半导体器件的方法 The method of manufacturing a semiconductor device and a semiconductor device
07/09/2014CN103915498A 隆起源极/漏极mos晶体管及借助植入间隔件及外延间隔件形成所述晶体管的方法 Uplift of the source / drain implant mos transistor and the spacer means and method for forming an epitaxial spacer of the transistor
07/09/2014CN103915497A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/09/2014CN103915496A 石墨烯电子器件及其制造方法 Graphene electronic device and manufacturing method thereof
07/09/2014CN103915495A 小平面式鳍式场效应晶体管 Small planar FinFET
07/09/2014CN103915494A FinFET的新型鳍结构 The new fin structure of the FinFET
07/09/2014CN103915493A Vdmos结构 Vdmos structure
07/09/2014CN103915492A 高电子迁移率晶体管及其形成方法 High electron mobility transistor and method of forming
07/09/2014CN103915491A 化合物半导体静电保护元件 Compound semiconductor electrostatic protection element
07/09/2014CN103915490A 薄膜晶体管、包括其的薄膜晶体管阵列面板及其制造方法 A thin film transistor, including a thin film transistor array panel and manufacturing method thereof
07/09/2014CN103915489A 绝缘栅双极型晶体管 Insulated gate bipolar transistor
07/09/2014CN103915488A 自旋场效应逻辑装置 Spin field effect logic device
07/09/2014CN103915487A 互补金属氧化物半导体电路及其制造方法 Complementary metal oxide semiconductor circuit and manufacturing method
07/09/2014CN103915486A 高效率FinFET二极管 High efficiency diode FinFET
07/09/2014CN103915485A 电荷补偿半导体器件 Charge compensation semiconductor devices
07/09/2014CN103915484A 具有被改造以用于背栅偏置的沟道芯部的场效应晶体管及制作方法 Has been converted for the back gate field effect transistor and method of manufacturing a core portion of the channel offset
07/09/2014CN103915483A 具有被改造以减少漏电流的沟道芯部的场效应晶体管及制作方法 Has been engineered to reduce the field effect transistor and manufacturing method of the channel leakage current in the core
07/09/2014CN103915451A 一种阵列基板及其制造方法、显示装置 An arrayed substrate and manufacturing method, a display device
07/09/2014CN103915450A 一种阵列基板、制作方法及显示装置 One kind of array substrate, a display device and method of manufacturing
07/09/2014CN103915448A 薄膜晶体管阵列面板 The thin film transistor array panel
07/09/2014CN103915447A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device
07/09/2014CN103915444A 一种阵列基板及其制备方法、液晶显示面板 One kind of array substrate and its preparation method, a liquid crystal display panel
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