Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2008
10/23/2008US20080258239 Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
10/23/2008US20080258238 Semiconductor Device Manufactured Using an Oxygenated Passivation Process During High Density Plasma Deposition
10/23/2008US20080258236 Method of manufacturing a semiconductor device
10/23/2008US20080258235 Manufacturing method of semiconductor device and semiconductor device
10/23/2008US20080258233 Semiconductor Device with Localized Stressor
10/23/2008US20080258228 Contact Scheme for MOSFETs
10/23/2008US20080258227 Strained spacer design for protecting high-k gate dielectric
10/23/2008US20080258225 Mos transistors having high-k offset spacers that reduce external resistance and methods for fabricating the same
10/23/2008US20080258217 Semiconductor device structure for anti-fuse
10/23/2008US20080258216 Semiconductor device and method for manufacturing the same
10/23/2008US20080258215 LDMOS Device
10/23/2008US20080258214 Semiconductor Device and Method of Fabricating the Same
10/23/2008US20080258213 Shielded Gate Field Effect Transistor
10/23/2008US20080258212 Trench metal oxide semiconductor with recessed trench material and remote contacts
10/23/2008US20080258211 Semiconductor device and method for manufacturing the same
10/23/2008US20080258210 Semiconductor component and method of manufacture
10/23/2008US20080258209 Semiconductor device and manufaturing method thereof
10/23/2008US20080258208 Semiconductor component including compensation zones and discharge structures for the compensation zones
10/23/2008US20080258207 Block Contact Architectures for Nanoscale Channel Transistors
10/23/2008US20080258205 Non-volatile semiconductor memory device
10/23/2008US20080258204 Memory structure and operating method thereof
10/23/2008US20080258203 Stacked sonos memory
10/23/2008US20080258202 Nonvolatile semiconductor memory device
10/23/2008US20080258201 Semiconductor memory device and method of manufacturing the same
10/23/2008US20080258200 Memory cell having a shared programming gate
10/23/2008US20080258199 Flash memory device and fabricating method thereof
10/23/2008US20080258198 Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for cmos
10/23/2008US20080258197 Semiconductor-insulator-silicide capacitor
10/23/2008US20080258196 Semiconductor structure of a display device and method for fabricating the same
10/23/2008US20080258195 Semiconductor device and method of manufacturing the same
10/23/2008US20080258193 Ferroelectric memory and method of manufacturing the same
10/23/2008US20080258192 Semiconductor device and manufacturing method thereof
10/23/2008US20080258191 Capacitor device providing sufficient reliability
10/23/2008US20080258186 Source and Drain Formation in Silicon on Insulator Device
10/23/2008US20080258185 Semiconductor structure with dielectric-sealed doped region
10/23/2008US20080258183 Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching
10/23/2008US20080258182 Bicmos Compatible Jfet Device and Method of Manufacturing Same
10/23/2008US20080258180 Cross-section hourglass shaped channel region for charge carrier mobility modification
10/23/2008US20080258179 Hybrid molecular electronic device for switching, memory, and sensor applications, and method of fabricating same
10/23/2008US20080258178 Method of forming a MOS transistor
10/23/2008US20080258175 Stressed mos device
10/23/2008US20080258174 Optical Device and Method of Fabricating the Same
10/23/2008US20080258173 Vertical p-n junction device and method of forming same
10/23/2008US20080258172 Insulated gate bipolar transistor with built-in freewheeling diode
10/23/2008US20080258154 Semiconductor device manufacturing method and display device
10/23/2008US20080258153 Silcon carbide semiconductor device having schottky barrier diode and method for manufacturing the same
10/23/2008US20080258152 SiC semiconductor device having outer periphery structure
10/23/2008US20080258150 Method to fabricate iii-n field effect transistors using ion implantation with reduced dopant activation and damage recovery temperature
10/23/2008US20080258148 Thin film transistor and organic electroluminescence display using the same
10/23/2008US20080258147 Semiconductor device forming method
10/23/2008US20080258146 Thin-film transistor and fabrication method thereof
10/23/2008US20080258145 Semiconductor Devices Including an Amorphous Region in an Interface Between a Device Isolation Layer and a Source/Drain Diffusion Layer
10/23/2008US20080258143 Thin film transitor substrate and method of manufacturing the same
10/23/2008US20080258142 Semiconductor device, its manufacture method and template substrate
10/23/2008US20080258141 Thin film transistor, method of manufacturing the same, and flat panel display having the same
10/23/2008US20080258140 Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
10/23/2008US20080258138 Thin film transistor array panel and fabricating method thereof, and flat panel display with the same
10/23/2008US20080258135 Semiconductor structure having plural back-barrier layers for improved carrier confinement
10/23/2008US20080258134 Method for making a semiconductor device including shallow trench isolation (sti) regions with maskless superlattice deposition following sti formation and related structures
10/23/2008US20080258133 Semiconductor Device and Method of Fabricating the Same
10/23/2008US20080258132 Quantum dot optoelectronic device having an sb-containing overgrown layer
10/23/2008US20080258127 Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device
10/23/2008DE19832552B4 Halbleitereinrichtung mit Hohlraum zwischen der Gate-Elektrode und dem Halbleitersubstrat sowie zwischen den Isolationsseitenwandstücken und dem Halbleitersubstrat und Verfahren zu ihrer Herstellung A semiconductor device with cavity between the gate electrode and the semiconductor substrate and between the insulating side wall pieces and the semiconductor substrate and process for their preparation
10/23/2008DE112006003402T5 Verspannte Silizium-MOS-Vorrichtung mit BOX-Schicht zwischen den Source- und Drain-Gebieten Strained silicon MOS device with BOX layer between the source and drain regions
10/23/2008DE112006003303T5 Organischer Feldeffekttransistor und Herstellungsverfahren hierfür Organic field-effect transistor and manufacturing method thereof
10/23/2008DE102008019370A1 SIC-Halbleitervorrichtung mit Schottky-Sperrschichtdiode und Verfahren zu deren Fertigung SiC semiconductor device with Schottky-barrier diode and methods for their production
10/23/2008DE102008017065A1 SiC-Halbleitervorrichtung mit Außenumfangsstruktur SiC semiconductor device having outer peripheral structure
10/23/2008DE102004025735B4 Optischer-Empfänger-Gehäuse und Verfahren zu dessen Herstellung Optical receiver package and process for its preparation
10/23/2008CA2682834A1 Semiconductor device and method for fabricating the same
10/22/2008EP1983576A2 Trench metal oxide semiconductor device and method of manufacturing the same
10/22/2008EP1983563A1 Semiconductor device
10/22/2008EP1983559A1 Semiconductor device and process for producing the same
10/22/2008EP1983553A1 Method for manufacturing soi substrate
10/22/2008EP1983499A1 Reflective tft substrate and method for manufacturing reflective tft substrate
10/22/2008EP1983080A2 Single crystal diamond prepared by CVD
10/22/2008EP1982358A1 Process for fabricating a nano wire - based vertical transistor structure
10/22/2008EP1982357A2 Mos device and method of fabricating a mos device
10/22/2008EP1754253A4 A method of base formation in a bicmos process
10/22/2008EP1690290A4 Gan-based permeable base transistor and method of fabrication
10/22/2008EP1636833A4 Plasma spraying for joining silicon parts
10/22/2008EP1547234A4 Tunneling-effect energy converters
10/22/2008EP1419532A4 Folded bit line dram with vertical ultra thin body transistors
10/22/2008EP1390990B1 Group iii nitride based semiconductor device with a multiple quantum well structure
10/22/2008EP1078403B1 Gate turn-off thyristor
10/22/2008EP0902980B1 Long channel trench-gated power mosfet having fully depleted body region
10/22/2008CN101292360A Integrated circuit mounting for thermal stress relief useable in a multi-chip module
10/22/2008CN101292346A Process for integrating planar and non-planar cmos transistors on a bulk substrate and article made thereby
10/22/2008CN101292334A Strained silicon mos device with box layer between the source and drain regions
10/22/2008CN101291554A Semiconductor device manufacturing method and display device
10/22/2008CN101290949A Nano-size silicon Schottky diode
10/22/2008CN101290927A Circuit arrangement having a free-wheel diode
10/22/2008CN101290910A Semiconductor element and its manufacture method
10/22/2008CN101290881A Non-volatile memory device and method for fabricating the same
10/22/2008CN101290875A Discrete silicon-containing substrate and device low temperature manufacture
10/22/2008CN101290870A Method for forming pattern, method for manufacturing semiconductor device and semiconductor device
10/22/2008CN101290446A TFT-LCD array substrate and method of manufacture
10/22/2008CN100428521C Organic semiconductor transistor element
10/22/2008CN100428495C P-type and N-type zinc oxide thin film and producing method thereof
10/22/2008CN100428494C Semiconductor device and method for manufacturing the same
10/22/2008CN100428493C Heat resistance structure on plastic substrate and forming method
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