Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2008
10/09/2008US20080246082 Trenched mosfets with embedded schottky in the same cell
10/09/2008US20080246081 Self-Aligned Trench MOSFET and Method of Manufacture
10/09/2008US20080246080 Shallow trench isolation (STI) based laterally diffused metal oxide semiconductor (LDMOS)
10/09/2008US20080246079 Power semiconductor device
10/09/2008US20080246078 Charge trap flash memory device and memory card and system including the same
10/09/2008US20080246076 Methods for nanopatterning and production of nanostructures
10/09/2008US20080246075 Semiconductor device and method of manufacturing the same
10/09/2008US20080246074 Two-Bits Per Cell Not-And-Gate (NAND) Nitride Trap Memory
10/09/2008US20080246073 Nonvolatile Memory Devices Including a Resistor Region
10/09/2008US20080246072 Nonvolatile semiconductor memory device and manufacturing method of the same
10/09/2008US20080246071 Mos varactors with large tuning range
10/09/2008US20080246070 Methods and apparatus for forming a polysilicon capacitor
10/09/2008US20080246069 Folded Node Trench Capacitor
10/09/2008US20080246068 Trench capacitors and memory cells using trench capacitors
10/09/2008US20080246067 Dram device and method of manufacturing the same
10/09/2008US20080246062 Semiconductor based controllable high resistance device
10/09/2008US20080246061 Stress layer structure
10/09/2008US20080246060 Transistor
10/09/2008US20080246059 Device Fabrication by Anisotropic Wet Etch
10/09/2008US20080246058 Gallium nitride material transistors and methods associated with the same
10/09/2008US20080246057 Silicon layer for stopping dislocation propagation
10/09/2008US20080246056 SILICIDE FORMATION FOR eSiGe USING SPACER OVERLAPPING eSiGe AND SILICON CHANNEL INTERFACE AND RELATED PFET
10/09/2008US20080246055 Semiconductor component including a monocrystalline semiconductor body and method
10/09/2008US20080246054 Self-supported nitride semiconductor substrate and its production method, and light-emitting nitride semiconductor device using it
10/09/2008US20080246053 P-Type Group III Nitride Semiconductor and Production Method Thereof
10/09/2008US20080246044 LED device with combined Reflector and Spherical Lens
10/09/2008US20080246041 METHOD OF FABRICATING SOI nMOSFET AND THE STRUCTURE THEREOF
10/09/2008US20080246039 Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitor
10/09/2008US20080246036 Semiconductor Device, Television Set, and Method for Manufacturing The Same
10/09/2008US20080246035 Semiconductor device and display appliance using the semiconductor device
10/09/2008US20080246034 Thin film transistor for flat panel display and method of fabricating the same
10/09/2008US20080246029 Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device
10/09/2008US20080246023 Transistor Based on Resonant Tunneling Effect of Double Barrier Tunneling Junctions
10/09/2008US20080246022 Method for Producing Planar Transporting Resonance Heterostructures
10/09/2008US20080246021 Single electron transistor and method of manufacturing the same
10/09/2008US20080246020 Crystal structure semiconductor; smooth surfaces
10/09/2008US20080246019 Defect reduction by oxidation of silicon
10/09/2008DE112006003439T5 Ein zugbelasteter NMOS-Transistor mit Gruppe-III-N-Source-/Drain-Gebieten A zugbelasteter NMOS transistor with group-III-N source / drain regions
10/09/2008DE112006003059T5 Halbleiteranordnungen und Verfahren zur Herstellung derselben Semiconductor devices and methods of manufacturing the same
10/09/2008DE10318604B4 Feldeffekttransistor Field-effect transistor
10/09/2008DE10247467B4 Kapazitiver Sensor zur Erfassung einer physikalischen Grösse, welcher eine physikalische Grösse entlang einer Mehrzahl von Achsen erfasst Capacitive sensor for detecting a physical variable, which detects a physical quantity along a plurality of axes
10/09/2008DE102008014894A1 Halbleitervorrichtung mit Schottky-Sperrdiode und Verfahren zu deren Herstellung A semiconductor device comprising Schottky barrier diode and methods for their preparation
10/09/2008DE102007015874A1 Verfahren zur Herstellung einer porösen Schicht A process for preparing a porous layer
10/09/2008DE102007013803A1 High volt complementary metal oxide semiconductor transistor, has trenches extending in drift region parallel to shortest connection between source and drain and filled with electrically conductive material and insulated against body
10/09/2008DE102007009915A1 Halbleiterbauelement mit verformter Halbleiterlegierung mit einem Konzentrationsprofil A semiconductor device having a deformed semiconductor alloy having a concentration profile
10/09/2008DE102004053587B4 Flüssigkristalldisplay-Tafel und Verfahren zu deren Herstellung Liquid crystal display panel and process for their preparation
10/09/2008DE10024510B4 Halbleiter-Bauteil und Verfahren zum Herstellen desselben Of the same semiconductor device and methods for making
10/08/2008EP1978562A2 Trench gate MOSFET and method of manufacturing the same
10/08/2008EP1978554A2 Method for manufacturing semiconductor substrate comprising implantation and separation steps
10/08/2008EP1978550A1 Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
10/08/2008EP1978132A2 Method for producing a porous layer
10/08/2008EP1977451A2 Single stress liner for migration stability and speed
10/08/2008EP1977450A1 Floating gate structure with high electrostatic discharge performance
10/08/2008EP1977449A2 Electronic device with a multi-gated electrode structure and a process for forming the electronic device
10/08/2008EP1977446A2 Semiconductor transistors with expanded top portions of gates
10/08/2008EP1929537A4 High performance mosfet comprising a stressed gate metal silicide layer and method of fabricating the same
10/08/2008EP1586118B1 Embedded capacitor associated with a sram cell
10/08/2008EP1358680B1 Isoelectronic co-doping
10/08/2008EP1342264B1 Layers in substrate wafers
10/08/2008CN101283448A Semiconductor storage device and method for manufacturing same
10/08/2008CN101283444A Semiconductor device and method of manufacturing the same
10/08/2008CN101283443A Process for production of devices
10/08/2008CN101283388A TFT substrate and method for manufacturing TFT substrate
10/08/2008CN101281931A Transistor
10/08/2008CN101281930A Nano channel flash memory
10/08/2008CN101281929A Semiconductor devices
10/08/2008CN101281928A Semiconductor device and uses thereof
10/08/2008CN101281927A Grid electrode of MOSFET transistor and manufacturing method thereof
10/08/2008CN101281926A 半导体结构 The semiconductor structure
10/08/2008CN101281925A Semiconductor device
10/08/2008CN101281918A Active pixel sensor unit structure and method for forming the structure
10/08/2008CN101281913A Display device and sputtering target for producing the same
10/08/2008CN101281911A Non-volatile memory device and method for manufacturing the same
10/08/2008CN101281909A NMOS pipe built-in bidirectional thyristor electrostatic protection device
10/08/2008CN101281886A Recessed gate mos transistor device and manufacture method thereof
10/08/2008CN101281871A Composite hard mask layer, metal-oxide-semiconductor transistor and manufacturing method thereof
10/08/2008CN101281715A Display device
10/08/2008CN101281328A Image display system
10/08/2008CN100424892C Heterojunction pn diode based on silicon nanoline and producing method thereof
10/08/2008CN100424891C 物理量传感器 Physical sensors
10/08/2008CN100424890C Semiconductor device and method of manufacturing the same
10/08/2008CN100424889C Semi-conductor transistor possessing decreased grid electrode-source electrode /drain capacitor
10/08/2008CN100424888C Semiconductor device and manufacturing method of the same
10/08/2008CN100424887C Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
10/08/2008CN100424886C Finfet body contact structure and method for founding same
10/08/2008CN100424885C Logic switch and circuits utilizing the switch
10/08/2008CN100424875C Semiconductor element
10/08/2008CN100424859C Electronic device and producing method thereof
10/08/2008CN100424858C Electronic device and producing method thereof
10/08/2008CN100424854C High ft and fmax bipolar transistor and method of making same
10/08/2008CN100424831C Electroconductive pattern, manufacturintg method for electronic device and electronic device
10/08/2008CN100424826C Transistor element having an anisotropic high-k gate dielectric
10/08/2008CN100424824C Semiconductor structure and method for manufacturing semiconductor structure
10/08/2008CN100424823C Semiconductor substrate forming method and formed semiconductor substrate
10/08/2008CN100424576C Active matrix display device and manufacturing method of the same
10/08/2008CN100424573C Thin-film transistor array panel and its making method
10/08/2008CN100424560C Liquid crystal display device and manufacturing method thereof
10/07/2008USRE40532 Non-volatile memory cell and fabrication method
10/07/2008US7433237 Memory utilizing oxide nanolaminates
10/07/2008US7433166 Constant current generator
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