Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2008
10/16/2008US20080251116 Artificial Amorphous Semiconductors and Applications to Solar Cells
10/16/2008US20080251008 Substrate Processing Apparatus and Semiconductor Device Producing Method
10/16/2008DE10331560B4 Halbleitervorrichtung mit einem Verbundbereich und ein Verfahren zur Herstellung derselben A semiconductor device comprising a composite region and a method of manufacturing the same
10/16/2008DE10317383B4 Sperrschicht-Feldeffekttransistor (JFET) mit Kompensationsgebiet und Feldplatte Junction field-effect transistor (JFET) with compensation field and field plate
10/16/2008DE102008013755A1 Deckschichten beinhaltend Aluminiumnitrid für Nitrid-basierte Transistoren und Verfahren zu deren Herstellung Outer layers comprising aluminum nitride for nitride based transistors and methods for their preparation
10/16/2008DE102007032290B3 Transistor i.e. recessed channel array transistor, for use in memory i.e. dynamic RAM, of integrated circuit, has gate electrode arranged in gate trench, and carbon material corresponding to layer over gate dielectric layer
10/16/2008DE102005027456B4 Photodiode mit verringertem Dunkelstrom, Verfahren zur Herstellung und ihre Verwendung Photodiode having a reduced dark current, process for preparation and their use
10/16/2008DE102005012117B4 Transistorbauelement Transistor device
10/16/2008DE10048165B4 Leistungshalbleiterbauelement mit einer beabstandet zu einer Emitterzone angeordneten Stoppzone Power semiconductor component with a spaced apart to an emitter zone stop zone
10/15/2008EP1981087A2 Electrical device comprising a voltage dependant capacitance and method of manufacturing the same
10/15/2008EP1981086A1 Thin film transistor, and active matrix substrate and display device provided with such thin film transistor
10/15/2008EP1981085A1 Tft substrate, reflective tft substrate and method for manufacturing such substrates
10/15/2008EP1981076A1 Method for manufacturing silicon carbide semiconductor device
10/15/2008EP1981069A2 Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes
10/15/2008EP1979949A2 Semiconductor structure including trench capacitor and trench resistor
10/15/2008EP1979948A2 Thin film transistor and manufacturing method thereof
10/15/2008EP1979946A1 Nanowire tunneling transistor
10/15/2008EP1979944A1 A tunable semiconductor component provided with a current barrier
10/15/2008EP1979937A2 Methods of forming field effect transistors and methods of forming integrated circuitry comprising a transistor gate array and circuitry peripheral to the gate array
10/15/2008EP1979936A1 Non-volatile memory cell of a circuit integrated in a semiconductor chip, method for producing it, and use of a non-volatile memory cell
10/15/2008EP1979935A1 Tunneling transistor with barrier
10/15/2008EP1709691B8 Semiconductor structure
10/15/2008EP1432048B1 Matrix type piezoelectric/electrostrictive device and its manufacturing method
10/15/2008EP1417714B1 Bipolar transistor, semiconductor device and method of manufacturing same
10/15/2008EP1394865B1 Iii group nitride based semiconductor element and method for manufacture thereof
10/15/2008CN201134435Y Fast soft recovery diode chip with separation wall and ultrathin P+ anode
10/15/2008CN201134434Y Constant flow source device
10/15/2008CN101288181A Non-volatile memory device with improved data retention
10/15/2008CN101288180A Forming method of semiconductor structure
10/15/2008CN101288179A Semiconductor component with a drift zone and a drift control zone
10/15/2008CN101288178A Insulated gate field effect transistors
10/15/2008CN101288177A Low capacitance scr with trigger element
10/15/2008CN101288176A Traverse type IGBT of SOI groove
10/15/2008CN101288175A Power semiconductor device with interconnected gate trenches
10/15/2008CN101288174A Semiconductor device including a strained superlattice and overlying stress layer and related methods
10/15/2008CN101288173A Semiconductor devices employing poly-filled trenches
10/15/2008CN101288162A Method and apparatus for manufacturing semiconductor device
10/15/2008CN101288159A Semiconductor device having a polysilicon electrode
10/15/2008CN101288150A Magnetic devices and techniques for formation thereof
10/15/2008CN101287986A Field effect transistor, biosensor provided with it, and detecting method
10/15/2008CN101286530A Polycrystalline silicon thin-film transistor
10/15/2008CN101286529A Thin-film transistor, manufacturing method for the same and liquid crystal display panel
10/15/2008CN101286528A Transverse diffusing metal oxide semiconductor element and preparation method thereof
10/15/2008CN101286527A PMOS structure with dual ion implantation and method therefor
10/15/2008CN101286526A Semiconductor device and method for fabricating the same
10/15/2008CN101286517A Integrated circuit arrangement with capacitor and fabrication method
10/15/2008CN101286513A Flash memory structure and manufacturing method therefor
10/15/2008CN101286512A Semiconductor device
10/15/2008CN101286510A Un-assisted, low-trigger and high-holding voltage SCR
10/15/2008CN101286482A Pixel structure and transistor therein and method for making the same
10/15/2008CN101286478A CMOS transistor and manufacturing method therefor
10/15/2008CN101286463A Semiconductor device and manufacturing method thereof
10/15/2008CN101286451A High voltage device manufacture method by deep sub-micron technique
10/15/2008CN101285975A Light sensing unit and pixel structure possessing the light sensing unit and liquid crystal display panel
10/15/2008CN101285973A Liquid crystal display panel
10/15/2008CN100426713C Error correcting communication method and communication apparatus to which this communication method is applied
10/15/2008CN100426528C Thin film transistor, fabrication method thereof, liquid crystal display panel device having the same, and fabrication method thereof
10/15/2008CN100426527C Thin film transistor substrate and fabrication method thereof
10/15/2008CN100426526C Thin-film semiconductor device and producing method thereof
10/15/2008CN100426525C Semiconductor device and method for fabricating the same
10/15/2008CN100426524C Signal processing apparatus
10/15/2008CN100426523C In-line inserted semiconductor device
10/15/2008CN100426522C Negative electrode branching semiconductor device
10/15/2008CN100426521C Spin transistor
10/15/2008CN100426520C Transistor structure and control unit having same
10/15/2008CN100426509C Ultraviolet erasing semiconductor memory
10/15/2008CN100426495C Electronic device and producing method thereof
10/15/2008CN100426489C Semiconductor device and method of manufacturing thereof
10/15/2008CN100426467C Ultrathin gate pole oxidation layer and its growing method
10/15/2008CN100426464C Process for fabricating semiconductor device
10/15/2008CN100426416C Non-volatile semiconductor memory device and controlling method of the same
10/15/2008CN100426114C Vertical alignment mode liquid crystal display device
10/15/2008CN100426108C Liquid crystal display
10/15/2008CN100426107C Device comprising display region, liquid crystal apparatus and projecting display unit
10/15/2008CN100426105C Liquid crystal display device and fabricating method thereof
10/15/2008CN100426062C Semi-transparent TFT array substrate, and semi-transparent liquid crystal display
10/15/2008CN100426058C Liquid crystal display
10/14/2008US7437260 Concept of compensating for piezo influences on integrated circuitry
10/14/2008US7436707 Flash memory cell structure and operating method thereof
10/14/2008US7436479 Thin film panel for preventing stitch defect
10/14/2008US7436477 Active substrate, display apparatus and method for producing display apparatus
10/14/2008US7436474 Thin film transistor array panel and liquid crystal display including the panel
10/14/2008US7436465 Electrooptical device region and manufacturing method thereof, electrooptical device and electronic equipment
10/14/2008US7436384 Data driving apparatus and method for liquid crystal display
10/14/2008US7436073 Junction structure for a terminal pad and solder, and semiconductor device having the same
10/14/2008US7436071 Electronic component and semiconductor device, method of fabricating the same, circuit board mounted with the same, and electronic appliance comprising the circuit board
10/14/2008US7436070 Semiconductor device
10/14/2008US7436068 Components for film forming device
10/14/2008US7436067 Methods for forming conductive structures and structures regarding same
10/14/2008US7436066 Semiconductor element
10/14/2008US7436058 Reactive solder material
10/14/2008US7436045 Gallium nitride-based semiconductor device
10/14/2008US7436044 Electrical fuses comprising thin film transistors (TFTS), and methods for programming same
10/14/2008US7436042 Circuit for driving gate of power MOSFET
10/14/2008US7436041 Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier
10/14/2008US7436038 Visible/near infrared image sensor array
10/14/2008US7436037 Moisture resistant pressure sensors
10/14/2008US7436036 PMOS transistor of semiconductor device, semiconductor device comprising the same, and method for manufacturing the same
10/14/2008US7436035 Method of fabricating a field effect transistor structure with abrupt source/drain junctions
10/14/2008US7436033 Tri-gated molecular field effect transistor and method of fabricating the same
1 ... 903 904 905 906 907 908 909 910 911 912 913 914 915 916 917 918 919 920 921 922 923 ... 2182