Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2008
10/30/2008US20080265257 Thin film transistor
10/30/2008US20080265256 MOS devices with improved source/drain regions with SiGe
10/30/2008US20080265255 Semiconductor-based, large-area, flexible, electronic devices on <100> oriented substrates
10/30/2008US20080265246 Polymer film and polymer film device using the same
10/30/2008US20080265243 Magnetic floating gate flash memory structures
10/30/2008US20080265242 Cmos image sensor with enhanced photosensitivity
10/30/2008US20080265241 Semiconductor device and a method for manufacturing a semiconductor device
10/30/2008US20080265140 Semiconductor pixel arrays with reduced sensitivity to defects
10/30/2008US20080264777 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
10/30/2008DE19956987B4 Verfahren zum Ausbilden einer Gate-Elektrode mit Titan-Polycid-Struktur A method of forming a gate electrode with polycide structure, titanium-
10/30/2008DE19836233B4 Lateraler DMOS-Transistor auf isolierender Unterlage und Verfahren zu seiner Herstellung A lateral DMOS transistor on an insulating substrate and process for its preparation
10/30/2008DE112007000175T5 Feldeffekttransistor Field-effect transistor
10/30/2008DE10255690B4 Halbleitersensor für eine dynamische Größe Semiconductor sensor dynamic quantity
10/30/2008DE102008018865A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
10/30/2008DE102008001229A1 Chip-Resistor-Substrat Chip Resistor substrate
10/30/2008DE102007028316B3 Halbleiterbauelement mit Pufferschicht und Verfahren zu dessen Herstellung A semiconductor device having a buffer layer and process for its preparation
10/30/2008DE102007020979A1 Nitridhalbleiterbauelement mit Gruppe-III-Nitrid-Schichtstruktur auf einer Gruppe-IV-Substratoberfläche mit höchstens zweizähliger Symmetrie The nitride semiconductor Group III nitride layer structure on a group IV substrate surface with at most twofold symmetry
10/30/2008DE102007020039A1 Method for fabrication of vertically inhomogenous platinum or gold distribution in semiconductor substrate, involves diffusing platinum or gold into semiconductor substrate from one of surfaces of semiconductor substrate
10/30/2008DE102007019551A1 Semiconductor component element has substrate of conduction type with main surface of semiconductor component element, and semiconductor layer of conduction type is arranged on substrate
10/30/2008DE102007018631A1 Halbleiterbauelement mit Kompensationszonen und Entladestrukturen für die Kompensationszonen A semiconductor device with compensation zones and the compensation zones for Entladestrukturen
10/30/2008DE102007018431A1 Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor Fumed zinc oxide-containing composite of layers and these composite comprising Direction field effect transistor
10/30/2008DE102007018367A1 Semiconductor component i.e. insulated gate bipolar transistor, has semiconductor region insulated against base region of n-channel transistor at lower side pointing to base region by another semiconductor region
10/29/2008EP1986240A2 Semiconductor device and method for manufacturing semiconductor device
10/29/2008EP1986239A2 Method for producing a matrix for detecting electromagnetic radiation and, in particular, infrared radiation.
10/29/2008EP1986226A1 Semiconductor device and method for manufacturing the same
10/29/2008EP1986219A1 Soi substrate and method for manufacturing soi substrate
10/29/2008EP1984954A1 Field effect transistor using oxide film for channel and method of manufacturing the same
10/29/2008EP1984953A1 Thin-film transistor and display device oxide semiconductor and gate dielectric having an oxygen concentration gradient
10/29/2008EP1984952A1 Method and apparatus for authentication
10/29/2008EP1984940A2 Method for conductivity control of (al,in,ga,b)n
10/29/2008EP1927138A4 Semiconductor device
10/29/2008EP1694506B1 Method and apparatus for printing a patterned layer on a flat substrate with a flat-type-bed
10/29/2008EP1644983B1 Semiconductor device including mosfet having bandgap-engineered superlattice
10/29/2008EP1409237B1 Dual-cell soft programming for virtual-ground memory arrays
10/29/2008EP1292726B8 Single crystal diamond prepared by cvd
10/29/2008EP0996982B1 Method for making a vertical mos transistor
10/29/2008EP0976149B1 Method for limiting internal diffusion in a semiconductor device with composite si/sige gate
10/29/2008CN101297408A Metal source/drain schottky barrier silicon-on-nothing MOSFET device and method thereof
10/29/2008CN101297407A Transistor device and manufacturing method thereof
10/29/2008CN101297406A A method of making an inverted-T channel transistor
10/29/2008CN101297397A Semi-insulating GaN and method of making the same
10/29/2008CN101295736A Semiconductor voltage regulation device and manufacturing method thereof
10/29/2008CN101295735A Nonvolatile semiconductor memory device
10/29/2008CN101295734A Semiconductor device and method for manufacturing the same
10/29/2008CN101295733A Semiconductor device
10/29/2008CN101295732A Semiconductor device
10/29/2008CN101295731A Semiconductor device
10/29/2008CN101295730A Semiconductor device and its grid production method
10/29/2008CN101295716A Channel type side wall floating grid structure flash memory and its use method
10/29/2008CN101295715A High-voltage wireless radio frequency power element
10/29/2008CN101295712A Trench metal oxide semiconductor
10/29/2008CN101295676A Layout design method of static electricity discharge protection device and MOS device
10/29/2008CN101295645A Metal-oxide-semiconductor transistor with Y type metal grid and technique thereof
10/29/2008CN101295132A Method of forming a thin film pattern and method of fabricating a liquid crystal display device
10/29/2008CN100429800C Solid embossing of polymer devices
10/29/2008CN100429792C Flat capacitor structure and flat capacitor, grid and resistance forming technique method
10/29/2008CN100429791C Semiconductor device manufacturing method and accelerator sensor
10/29/2008CN100429790C Semiconductor device and its manufacturing method
10/29/2008CN100429789C Thin film transistor and image display device
10/29/2008CN100429787C Semiconductor device and its making method
10/29/2008CN100429786C Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same
10/29/2008CN100429785C Thick oxide layer on botton of trench structure in silicon
10/29/2008CN100429784C Radiation-emitting semiconductor device and method of manufacturing such a device
10/29/2008CN100429783C Semiconductor device and methods of producing the same
10/29/2008CN100429777C Memory embedded semiconductor device and method for fabricating the same
10/29/2008CN100429754C Semiconductor device and a method for forming patterns
10/29/2008CN100429686C Display device
10/29/2008CN100429670C Fingerprint identification system and method thereof
10/29/2008CN100429563C Film forming method,distributing pattern forming method,semiconductor device mfg method
10/28/2008US7444614 Computer-readable recording medium storing semiconductor designing program for improving both integration and connection of via-contact and metal
10/28/2008US7443725 Floating gate isolation and method of making the same
10/28/2008US7443723 Multi-state memory
10/28/2008US7443715 SRAM cells with repressed floating gate memory, low tunnel barrier interpoly insulators
10/28/2008US7443561 Deep quantum well electro-absorption modulator
10/28/2008US7443478 Contact structure
10/28/2008US7443475 Liquid crystal display apparatus
10/28/2008US7443457 Liquid crystal display device having polycrystalline silicon thin film transistor and method of fabricating the same
10/28/2008US7443224 Multi-threshold MIS integrated circuit device and circuit design method thereof
10/28/2008US7443038 Flip-chip image sensor packages
10/28/2008US7443037 Stacked integrated circuit package system with connection protection
10/28/2008US7443030 Thin silicon based substrate
10/28/2008US7443029 Adhesion of copper and etch stop layer for copper alloy
10/28/2008US7443027 Electronic device having coalesced metal nanoparticles
10/28/2008US7443022 Board-on-chip packages
10/28/2008US7443021 Electronic component packaging structure and method for producing the same
10/28/2008US7443018 Integrated circuit package system including ribbon bond interconnect
10/28/2008US7443009 N well implants to separate blocks in a flash memory device
10/28/2008US7443008 Lateral programmable polysilicon structure incorporating polysilicon blocking diode
10/28/2008US7443007 Trench isolation structure having an implanted buffer layer
10/28/2008US7443005 Lens structures suitable for use in image sensors and method for making the same
10/28/2008US7443004 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus
10/28/2008US7443000 Semiconductor device having sidewall portion with silicon nitride film formed above layer and separated from region above primary insulating film via oxide film, where the portion is formed on sidewall of gate electrode
10/28/2008US7442999 Semiconductor substrate, substrate for semiconductor crystal growth, semiconductor device, optical semiconductor device, and manufacturing method thereof
10/28/2008US7442998 Non-volatile memory device
10/28/2008US7442997 Three-dimensional memory cells
10/28/2008US7442996 Structure and method for enhanced triple well latchup robustness
10/28/2008US7442992 Bonded SOI substrate, and method for manufacturing the same
10/28/2008US7442991 Display including casing and display unit
10/28/2008US7442990 Semiconductor device having a recess channel and method for fabricating the same
10/28/2008US7442989 Nonvolatile semiconductor memory device and method of manufacturing thereof
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