Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2008
11/19/2008CN101309351A CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics
11/19/2008CN101308877A Transparent semiconductor film diode and preparing method thereof
11/19/2008CN101308876A Memory unit structure and operating method thereof
11/19/2008CN101308875A Semiconductor device having super junction structure and method of manufacturing the same
11/19/2008CN101308874A High voltage semiconductor device and method of manufacturing the same
11/19/2008CN101308873A Semiconductor construction
11/19/2008CN101308872A Semiconductor device
11/19/2008CN101308871A Insulated gate semiconductor device and manufacturing mnethod thereof
11/19/2008CN101308870A Insulated gate transistor and inverter circuit
11/19/2008CN101308869A Insulated gate transistor and inverter circuit
11/19/2008CN101308868A Floating grid with multiple layer hetero quantum point structure applicable for memory unit
11/19/2008CN101308867A Memory device, method of manufacturing the same, and method of operating the same
11/19/2008CN101308866A Flat panel display with improved white balance and manufacture method
11/19/2008CN101308849A Semi-conductor apparatus and forming method thereof
11/19/2008CN101308848A Semiconductor device
11/19/2008CN101308824A Nonvolatile memory device and method of fabricating the same
11/19/2008CN101308823A Layout structure of nonvolatile semiconductor memory and preparation method thereof
11/19/2008CN101308797A Lateral dmos device structure and manufacturing method thereof
11/19/2008CN101308788A Semiconductor apparatus and manufacturing method thereof
11/19/2008CN101308783A Semiconductor substrate, semiconductor device and manufacturing method thereof
11/19/2008CN101308781A Semiconductor apparatus, thin film transistor substrate, display apparatus and method for making same
11/19/2008CN101308726A Mim caspacitor
11/19/2008CN100435355C Gate electrode and manufacturing method thereof
11/19/2008CN100435354C Semiconductor device
11/19/2008CN100435353C MOS transistor and its producing method
11/19/2008CN100435352C Vertical MOS power crystal
11/19/2008CN100435351C Method for modulating carrying-performance nano-grade field effect transistor using dipale effect
11/19/2008CN100435350C High-dielectric coefficient grid dielectric material titanium aluminate film and preparing method thereof
11/19/2008CN100435347C Fabrication of semiconductor devices
11/19/2008CN100435338C Word and bit line arrangement for a fin FET semiconductor memory
11/19/2008CN100435332C Semiconductor device formed having a metal layer for conducting the device current and for high contrast marking and method thereof
11/19/2008CN100435326C Integrated circuit die I/O cells
11/19/2008CN100435297C 半导体装置及其制造方法 Semiconductor device and manufacturing method
11/19/2008CN100435296C Multi-bit non-volatile memory device and method therefor
11/19/2008CN100435284C Semiconductor device with low contact resistance and method for fabricating the same
11/19/2008CN100435283C Method of making a vertical gate semiconductor device
11/19/2008CN100435280C Semiconductor device, and method of manufacturing the same
11/19/2008CN100435277C Ge-based semiconductor structure and manufacturing method thereof
11/19/2008CN100435271C Alignment method, method for manufacturing a semiconductor device, substrate for a semiconductor device, electronic equipment
11/19/2008CN100435261C Low temperature formation method for electron emission chip comprising copper oxide or copper nanowire
11/19/2008CN100435203C Display device
11/19/2008CN100435012C Liquid crystal display device and fabrication method thereof
11/19/2008CN100435007C Liquid crystal display device and method of fabricating the same
11/18/2008US7454104 Optical module
11/18/2008US7453736 Methods of erasing and designing electrically erasable charge trap nonvolatile memory cells having erase threshold voltage that is higher than an initial threshold voltage
11/18/2008US7453728 Data storage system with enhanced reliability with respect to data destruction caused by reading-out of the data
11/18/2008US7453630 Optical properties apparatus, the restoration method, and an optical system used in the apparatus
11/18/2008US7453531 LCD driving device having plural TFT channels connected in parallel with either increasing channel widths or decreasing channel distances from central part to edges of the device
11/18/2008US7453420 Display device with electrostatic discharge protection circuitry
11/18/2008US7453193 Electronic device containing a carbon nanotube
11/18/2008US7453157 Microelectronic packages and methods therefor
11/18/2008US7453151 Methods for lateral current carrying capability improvement in semiconductor devices
11/18/2008US7453146 High power MCM package with improved planarity and heat dissipation
11/18/2008US7453135 Semiconductor device and method of manufacturing the same
11/18/2008US7453134 Integrated circuit device with a circuit element formed on an active region having rounded corners
11/18/2008US7453133 Silicide/semiconductor structure and method of fabrication
11/18/2008US7453131 Photodiode detector and associated readout circuitry
11/18/2008US7453129 Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
11/18/2008US7453128 Semiconductor device and method for fabricating the same
11/18/2008US7453126 Semiconductor memory device having layout area reduced
11/18/2008US7453125 Double mesh finfet
11/18/2008US7453124 Field effect transistor and fabrication method thereof
11/18/2008US7453123 Self-aligned planar double-gate transistor structure
11/18/2008US7453121 Body contact formation in partially depleted silicon on insulator device
11/18/2008US7453120 Semiconductor structure
11/18/2008US7453119 Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact
11/18/2008US7453118 Non-volatile semiconductor memory device
11/18/2008US7453117 Non-volatile semiconductor memory device
11/18/2008US7453116 Semiconductor memory device and method of fabricating the same
11/18/2008US7453115 Dielectric relaxation memory
11/18/2008US7453113 Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
11/18/2008US7453112 Integrated circuit memory cells and methods of forming
11/18/2008US7453107 Method for applying a stress layer to a semiconductor device and device formed therefrom
11/18/2008US7453106 Semiconductor device with stress reducing trench fill containing semiconductor microparticles in shallow trench isolation
11/18/2008US7453104 Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit
11/18/2008US7453103 Semiconductor constructions
11/18/2008US7453102 Nitride-based semiconductor laser device
11/18/2008US7453101 Semiconductor device with organic compound layer
11/18/2008US7453098 Vertical electrode structure of gallium nitride based light emitting diode
11/18/2008US7453097 Nanowire light emitting device and method of fabricating the same
11/18/2008US7453095 Light emitting device and manufacturing method thereof
11/18/2008US7453091 Gallium nitride-based semiconductor device
11/18/2008US7453090 Semiconductor device including a semiconductor substrate formed with a shallow impurity region
11/18/2008US7453089 Light-emitting device and display device
11/18/2008US7453088 Electro-optical device and manufacturing method thereof
11/18/2008US7453087 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
11/18/2008US7453086 Thin film transistor panel
11/18/2008US7453085 Nano-elastic memory device and method of manufacturing the same
11/18/2008US7453083 Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
11/18/2008US7453081 Phase change memory cell including nanocomposite insulator
11/18/2008US7452961 comprising a polymer having liquid crystallinity, having a number-average molecular weight in terms of polystyrene of 103 to 108 and having an electron mobility or hole mobility of 10-5 cm2/Vs or more, and having a film thickness in the range from 1 nm to 100 mu m; organic transistor, solar battery
11/18/2008US7452830 Semiconductor devices and methods for manufacturing the same
11/18/2008US7452828 plural nanotubes mutually cross-link, formed in an arbitrary pattern on a surface of a base body; extremely fine and excellent in electrical characteristics
11/18/2008US7452808 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding
11/18/2008US7452802 Method of forming metal wiring for high voltage element
11/18/2008US7452791 Crystalline semiconductor film, method of manufacturing the same, and semiconductor device
11/18/2008US7452788 Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus
11/18/2008US7452786 Method for manufacturing thin film integrated circuit, and element substrate
11/18/2008US7452779 Semiconductor devices having improved gate insulating layers and related methods of fabricating such devices
11/18/2008US7452778 Semiconductor nano-wire devices and methods of fabrication
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