Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2008
11/06/2008US20080272441 Method and circuit for down-converting a signal
11/06/2008US20080272440 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
11/06/2008US20080272439 Small geometry mos transistor with thin polycrystalline surface contacts and method for making
11/06/2008US20080272435 Semiconductor device and method of forming the same
11/06/2008US20080272432 Accumulation mode mos devices and methods for fabricating the same
11/06/2008US20080272431 Method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length
11/06/2008US20080272430 Semiconductor device and method of forming the same
11/06/2008US20080272429 Superjunction devices having narrow surface layout of terminal structures and methods of manufacturing the devices
11/06/2008US20080272428 Semiconductor Device Structure With a Tapered Field Plate and Cylindrical Drift Region Geometry
11/06/2008US20080272427 Sonos Memory Device With Reduced Short-Channel Effects
11/06/2008US20080272426 Nonvolatile Memory Transistors Including Active Pillars and Related Methods and Arrays
11/06/2008US20080272425 Semiconductor Storage Element and Manufacturing Method Thereof
11/06/2008US20080272423 Conductive structures, non-volatile memory device including conductive structures and methods of manufacturing the same
11/06/2008US20080272422 Transistor Providing Different Threshold Voltages and Method of Fabrication Thereof
11/06/2008US20080272421 Methods, constructions, and devices including tantalum oxide layers
11/06/2008US20080272412 Method and structure to reduce contact resistance on thin silicon-on-insulator device
11/06/2008US20080272411 Semiconductor device with multiple tensile stressor layers and method
11/06/2008US20080272410 Self-Aligned Spacer Contact
11/06/2008US20080272409 JFET Having a Step Channel Doping Profile and Method of Fabrication
11/06/2008US20080272408 Active area junction isolation structure and junction isolated transistors including igfet, jfet and mos transistors and method for making
11/06/2008US20080272407 Semiconductor device having a fin structure and fabrication method thereof
11/06/2008US20080272406 Double gate jfet with reduced area consumption and fabrication method therefor
11/06/2008US20080272404 Method for applying a stress layer to a semiconductor device and device formed therefrom
11/06/2008US20080272403 JFET Device With Virtual Source and Drain Link Regions and Method of Fabrication
11/06/2008US20080272402 JFET Device With Improved Off-State Leakage Current and Method of Fabrication
11/06/2008US20080272401 Inverted Junction Field Effect Transistor and Method of Forming Thereof
11/06/2008US20080272398 Conductive spacers for semiconductor devices and methods of forming
11/06/2008US20080272397 Semiconductor device with modulated field element
11/06/2008US20080272396 Simplified Method of Producing an Epitaxially Grown Structure
11/06/2008US20080272395 Enhanced hole mobility p-type jfet and fabrication method therefor
11/06/2008US20080272394 Junction field effect transistors in germanium and silicon-germanium alloys and method for making and using
11/06/2008US20080272393 Semiconductor device having strain-inducing substrate and fabrication methods thereof
11/06/2008US20080272388 Method for fabricating thin film pattern, device and fabricating method therefor, method for fabricating liquid crystal display, liquid crystal display, method for fabricating active matrix substrate, electro-optical apparatus, and electrical apparatus
11/06/2008US20080272378 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate
11/06/2008US20080272377 Gallium Nitride Substrate and Gallium Nitride Film Deposition Method
11/06/2008US20080272376 Semiconductor Device and Method of Manufacturing the Same
11/06/2008US20080272375 Thin film transistor array panel, display device including the panel, and method for manufacturing the display device
11/06/2008US20080272374 Semiconductor display device
11/06/2008US20080272373 Flash Memory Device Having Resistivity Measurement Pattern and Method of Forming the Same
11/06/2008US20080272372 Test structures for stacking dies having through-silicon vias
11/06/2008US20080272370 Field-effect transistor and method for manufacturing the same
11/06/2008US20080272367 Light-emitting device having improved light output
11/06/2008US20080272366 Field effect transistor having germanium nanorod and method of manufacturing the same
11/06/2008US20080272365 Insulating film and electronic device
11/06/2008US20080272364 Insulating film and electronic device
11/06/2008US20080272363 Selectively Conducting Devices, Diode Constructions, Constructions, and Diode Forming Methods
11/06/2008US20080272361 High Density Nanotube Devices
11/06/2008US20080272354 Phase change diode memory
11/06/2008US20080272301 Micro-protruding structure
11/06/2008US20080271535 Semiconductor Acceleration Sensor
11/06/2008US20080271313 Method, system, and apparatus for transfer of dies using a die plate
11/06/2008DE19712796B4 Epitaktischer SiC-Wafer, Verfahren zu seiner Herstellung und Halbleiter-Vorrichtung, die diesen verwendet SiC epitaxial wafer, a process for its preparation and semiconductor device using this
11/06/2008DE112007000161T5 Halbleitergerät für Hochfrequenz Semiconductor device for high frequency
11/06/2008DE112006003576T5 Verfahren und Struktur zur Reduzierung des äusseren Widerstands eines dreidimensionalen Transistors durch Verwendung von Epitaxie-Schichten Method and structure for reducing the external resistance of a three-dimensional transistor by using epitaxial layers
11/06/2008DE10341806B4 Verfahren zur Herstellung einer epitaktischen Silizium-Germanium Basisschicht eines heterobipolaren pnp Transistors A process for producing an epitaxial silicon-germanium base layer of a PNP transistor heterobipolaren
11/06/2008DE102007020659A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
11/06/2008DE102007020658A1 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
11/06/2008DE102007020657A1 Halbleiterbauelement mit einem Halbleiterkörper und Verfahren zur Herstellung desselben Of the same semiconductor device with a semiconductor body and method for producing
11/06/2008DE102007020258A1 Technik zur Verbesserung des Transistorleitungsverhaltens durch eine transistorspezifische Kontaktgestaltung Technology to improve the transistor conduction behavior through a transistor-specific contact design
11/06/2008DE102007020248A1 Vertical power transistor, has recess comprising edge trench laterally limited to recess, where length of part of trench is smaller or equal to length of double spaced adjacent trenches
11/06/2008DE102007018760A1 Verfahren zur Herstellung einer MOS-Transistorvorrichtung mit vertieftem Gate A method of manufacturing a MOS transistor device with recessed gate
11/06/2008DE10155023B4 Leitungsanordnung für Bitleitungen zur Kontaktierung mindestens einer Speicherzelle und Verfahren zur Herstellung einer Leitungsanordnung für Bitleitungen Conduit means for bit lines for making contact with at least a memory cell and method for manufacturing a piping arrangement for the bit lines
11/06/2008DE10154658B4 Integrierter Leistungsschaltkreis mit verbessertem elektrischen und thermischen Durchgangswiderstand und Verfahren zu seiner Herstellung Integrated power circuit with enhanced electrical and thermal contact resistance, and process for its preparation
11/06/2008DE10026911B4 Verfahren zur Herstellung eines Halbleiter-Superatoms und eines Aggregats davon A process for producing a semiconductor superatom and an aggregate thereof
11/05/2008EP1988579A2 Power MOSFET having a trench gate electrode
11/05/2008EP1987541A1 Double-gate semiconductor devices having gates with different work functions and methods of manufacture thereof
11/05/2008EP1987540A2 Semiconductor device with improved solder joint
11/05/2008EP1987520A2 Multi-bit memory cell having electrically floating body transistor, and method of programming and reading same
11/05/2008EP1917683A4 Power semiconductor device with interconnected gate trenches
11/05/2008EP1800345A4 Method of creating defect free high ge content (25%) sige-on-insulator (sgoi) substrates using wafer bonding techniques
11/05/2008EP1728274A4 Method for forming a semiconductor device having a notched control electrode and structure thereof
11/05/2008EP1668706A4 Structure and method for metal replacement gate of high performance device
11/05/2008EP1540710A4 Nanocrystal electron device
11/05/2008EP1507267B1 Wiring material and wiring board using the same
11/05/2008EP1198830B1 Process of manufacturing a semiconductor device including a buried channel field effect transistor
11/05/2008CN101300681A Semiconductor device and method for manufacturing same
11/05/2008CN101300680A Replacement metal gate transistors with reduced gate oxide leakage
11/05/2008CN101300679A Method of manufacturing a semiconductor device
11/05/2008CN101300670A An embedded strain layer in thin soi transistor and a method of forming the same
11/05/2008CN101300669A Field effect transistor with enhanced insulator structure
11/05/2008CN101299895A Organic light-emitting display and manufacture method thereof
11/05/2008CN101299442A Non-volatile semiconductor device including floating gate, method for manufacturing non-volatile semiconductor device and related system
11/05/2008CN101299441A Thin-film transistor, thin-film transistor array substrate, display panel and optoelectronic device
11/05/2008CN101299440A Field-effect transistors having germanium nano rod and manufacture method thereof
11/05/2008CN101299439A High pressure resistant constant-current source device and production method
11/05/2008CN101299438A Semiconductor structure
11/05/2008CN101299437A Field effect transistor having field plate electrodes
11/05/2008CN101299436A Device structure and manufacturing method using hdp deposited source-body implant block
11/05/2008CN101299412A Semiconductor device and method of manufacturing the same
11/05/2008CN101299122A Liquid crystal display panel and manufacture method thereof
11/05/2008CN100431172C Silicon carbide schottky barrier diode and method of making
11/05/2008CN100431171C Semiconductor device
11/05/2008CN100431170C Lateral PIN diode and method for producing the same
11/05/2008CN100431169C Field effect transistor and display using same
11/05/2008CN100431168C High power semiconductor device capable of preventing parasitical bipolar transistor
11/05/2008CN100431167C Bipolar junction transistor and method for manufacturing same
11/05/2008CN100431166C Semiconductor device with high structure reliability and low parasitic capacitance
11/05/2008CN100431156C Semiconductor memory device, semiconductor device, and portable electronic apparatus
11/05/2008CN100431154C Semiconductor integrated circuit device and manufacturing method thereof
11/05/2008CN100431153C Semi-conductor integrated circuit apparatus and its producing method
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