Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2008
10/30/2008WO2008129719A1 Process for producing semiconductor thin film and semiconductor device
10/30/2008WO2008129478A1 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
10/30/2008WO2008129238A1 Improved oxide-based field-effect transistors
10/30/2008WO2008128821A1 Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
10/30/2008WO2008105816A3 Gate dielectric structures, organic semiconductors, thin film transistors and related methods
10/30/2008WO2008101926A3 Field effect transistor with metal-semiconductor junction
10/30/2008WO2008100616A3 Atomic layer deposition of strontium oxide via n-propyltetramethyl cyclopentadienyl precursor
10/30/2008WO2008069832A3 Creating reliable via contacts for interconnect applications
10/30/2008WO2007125432A3 A method and system for triple play service control
10/30/2008WO2007117954A3 Power device with improved edge termination
10/30/2008WO2006116098A3 Mixed -crystal-orientation channel field effect transistors
10/30/2008WO2005019793A3 Sensor platform using a horizontally oriented nanotube element
10/30/2008US20080269486 Reconfigurable molecules and molecular switches, sensors, and dyes employing the same
10/30/2008US20080268657 Plasma Processing Method and Method for Manufacturing an Electronic Device
10/30/2008US20080268640 Method for forming bit-line contact plug and transistor structure
10/30/2008US20080268628 N-type semiconductor component with improved dopant implantation profile and method of forming same
10/30/2008US20080268613 Semiconductor Substrate And Method For Production Thereof
10/30/2008US20080268604 METHODS OF BASE FORMATION IN A BiCMOS PROCESS
10/30/2008US20080268589 Shallow trench divot control post
10/30/2008US20080266981 Nonvolatile memory devices and methods of forming the same
10/30/2008US20080266969 Method of operating non-volatile memory
10/30/2008US20080266965 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
10/30/2008US20080266960 Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memory
10/30/2008US20080266508 Liquid Crystal Display and Method for Manufacturing The Same
10/30/2008US20080266478 Liquid crystal display device
10/30/2008US20080266476 Liquid crystal display device
10/30/2008US20080266032 Illuminable Gaas Switching Component With Transparent Housing And Associated Microwave Circuit
10/30/2008US20080265755 Biscarbazol-9-Yl-Substituted Triarylamine-Containing Polymers and Electronic Devices
10/30/2008US20080265435 Structure and method for stress reduction in flip chip microelectronic packages using underfill materials with spatially varying properties
10/30/2008US20080265392 Semiconductor device and method for manufacturing the same
10/30/2008US20080265379 Laser Diode Orientation on Mis-Cut Substrates
10/30/2008US20080265377 Air gap with selective pinchoff using an anti-nucleation layer
10/30/2008US20080265376 Ic Chip and Its Manufacturing Method
10/30/2008US20080265375 Methods for the single-sided polishing of semiconductor wafers and semiconductor wafer having a relaxed Si1-x GEx Layer
10/30/2008US20080265374 (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
10/30/2008US20080265373 Semiconductor device
10/30/2008US20080265372 Semiconductor integrated circuit device
10/30/2008US20080265371 Capacitor Unit and Method of Forming the Same
10/30/2008US20080265370 Semiconductor device
10/30/2008US20080265369 Semiconductor Capacitor Structure
10/30/2008US20080265368 Integrated Stacked Capacitor and Method of Fabricating Same
10/30/2008US20080265367 Magnetically Alignable Integrated Circuit Device
10/30/2008US20080265365 Method for preventing the formation of electrical shorts via contact ild voids
10/30/2008US20080265363 High power device isolation and integration
10/30/2008US20080265361 Method for generating a layout, use of a transistor layout, and semiconductor circuit
10/30/2008US20080265347 Magnetoresistive element and manufacturing method thereof
10/30/2008US20080265346 Semiconductor sensor and manufacturing method of the same
10/30/2008US20080265344 Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device
10/30/2008US20080265343 Field effect transistor with inverted t shaped gate electrode and methods for fabrication thereof
10/30/2008US20080265342 Two-bit flash memory cell and method for manufacturing the same
10/30/2008US20080265341 Manufacture of semiconductor device having insulation film of high dielectric constant
10/30/2008US20080265338 Semiconductor Device Having Multiple Fin Heights
10/30/2008US20080265334 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage
10/30/2008US20080265331 Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same
10/30/2008US20080265329 Semiconductor device and method for producing it
10/30/2008US20080265328 Semiconductor device and method of manufacturing the same
10/30/2008US20080265324 Semiconductor device and method of manufacturing the same
10/30/2008US20080265323 Semiconductor Device and Manufacturing Method Thereof
10/30/2008US20080265322 Metal oxide semiconductor transistor with y shape metal gate and fabricating method thereof
10/30/2008US20080265321 Fin Field-Effect Transistors
10/30/2008US20080265320 Component arrangement including a power semiconductor component having a drift control zone
10/30/2008US20080265319 Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors
10/30/2008US20080265318 Semiconductor component and method for producing it
10/30/2008US20080265317 Technique for forming the deep doped columns in superjunction
10/30/2008US20080265316 Semiconductor structure with field shield and method of forming the structure
10/30/2008US20080265315 Semiconductor device with a semiconductor body and method for producing it
10/30/2008US20080265314 Semiconductor device having vertical MOSFET and method of manufacturing the same
10/30/2008US20080265313 Semiconductor device having enhanced performance and method
10/30/2008US20080265311 Vertical transistor and method for preparing the same
10/30/2008US20080265310 Nano region embedded dielectric layers, memory devices including the layers, and methods of making the same
10/30/2008US20080265309 Semiconductor memory device and manufacturing method thereof
10/30/2008US20080265308 Methods of forming finfets and nonvolatile memory devices including finfets
10/30/2008US20080265307 Non-volatile semiconductor memory devices
10/30/2008US20080265306 Non-Volatile Memory Device Having a Gap in the Tunnuel Insulating Layer and Method of Manufacturing the Same
10/30/2008US20080265305 Integrated circuits with substrate protrusions, including (but not limited to) floating gate memories
10/30/2008US20080265304 Nonvolatile semiconductor device including a floating gate, method of manufacturing the same and associated systems
10/30/2008US20080265303 Methods of forming shallow trench isolation structures with buried bit lines in non-volatile memories and devices, cards, and systems so formed
10/30/2008US20080265302 Memory structure and fabricating method thereof
10/30/2008US20080265301 Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications
10/30/2008US20080265299 Strained channel dynamic random access memory devices
10/30/2008US20080265294 Semiconductor device manufacturing method including forming a metal silicide layer on an indium-containing layer
10/30/2008US20080265292 Novel HVNMOS structure for reducing on-resistance and preventing BJT triggering
10/30/2008US20080265291 Mosfet device including a source with alternating p-type and n-type regions
10/30/2008US20080265290 Double mesh finfet
10/30/2008US20080265289 Device structure and manufacturing method using HDP deposited source-body implant block
10/30/2008US20080265286 Nonvolatile semiconductor memory device
10/30/2008US20080265285 Microelectronic programmable device and methods of forming and programming the same
10/30/2008US20080265283 Hetero-junction bipolar transistor
10/30/2008US20080265280 Hybrid fin field-effect transistor structures and related methods
10/30/2008US20080265279 Semiconductor device and a method for manufacturing a semiconductor device
10/30/2008US20080265278 Semiconductor Device and Semiconductor Integrated Circuit Device for Driving Plasma Display Using the Semiconductor Device
10/30/2008US20080265277 Semiconductor device and method for producing it
10/30/2008US20080265276 Semiconductor device
10/30/2008US20080265274 Light emitting diode element having a voltage regulating capability
10/30/2008US20080265270 Led element for an led stream
10/30/2008US20080265262 Methods and systems for testing a functional status of a light unit
10/30/2008US20080265261 Process for transferring a layer of strained semiconductor material
10/30/2008US20080265260 Power Device
10/30/2008US20080265259 GaN-BASED PERMEABLE BASE TRANSISTOR AND METHOD OF FABRICATION
10/30/2008US20080265258 Group III Nitride Semiconductor Device and Epitaxial Substrate
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