Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2008
11/13/2008US20080277666 Thin film transistor, organic light emitting display device including the same, and method of manufacturing the organic light emitting display device
11/13/2008US20080277665 Semiconductor device, nonvolatile memory device and method for fabricating the same
11/13/2008US20080277663 Thin film transistor and method of manufacturing the same
11/13/2008US20080277662 Semiconductor structures
11/13/2008US20080277658 Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same
11/13/2008US20080277657 Thin film transistor and organic light emitting display using the same
11/13/2008US20080277656 METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER
11/13/2008US20080277650 Organic photodetector and fabricating method of organic photodetector and organic thin film transistor
11/13/2008US20080277649 Field Effect Transistor and Method of Producing Same
11/13/2008US20080277648 Conductive Thin Film and Thin Film Transistor
11/13/2008US20080277646 Vertical Type Nanotube Semiconductor Device
11/13/2008US20080277645 Ferromagneic Influence on Quantum Dots
11/13/2008US20080276979 Plurality of quantum dots on the first and second surface create strain in the nanoribbon; positions of quantum dots on first surface are anticorrelated with respect to positions of second such that an electronic energy miniband structure is created; periodic longitudinal modulation
11/13/2008US20080276813 Method and Apparatus for Printing a Patterned Layer on a Flatsubstate with a Flat-Type-Bed
11/13/2008DE112006003550T5 Mehrgateanordnung mit vertieften Beanspruchungsbereichen Multi-gate arrangement with recessed stress areas
11/13/2008DE102008021430A1 SIC-Halbleitervorrichtung mit Schottky-Sperrschichtdiode SiC semiconductor device with Schottky-barrier diode
11/13/2008DE102008021429A1 SIC-Halbleitervorrichtung mit Schottky-Sperrschichtdiode SiC semiconductor device with Schottky-barrier diode
11/13/2008DE102007052202B3 Semiconductor component i.e. Schottky diode, has metallization structure electrically connected with compensation zones by Schottky contact and with drift zones by ohmic contact, where structure is arranged opposite to another structure
11/13/2008DE102007020266B3 Halbleiterstruktur mit einem elektrisch leitfähigen Strukturelement und Verfahren zu ihrer Herstellung Semiconductor structure having an electrically conductive structural member and a process for their preparation
11/12/2008EP1990838A1 Field effect transistor
11/12/2008EP1990837A1 Schottky junction type semiconductor element and method for manufacturing same
11/12/2008EP1990835A2 Semiconductor integrated circuit
11/12/2008EP1989739A2 Multiple die integrated circuit package
11/12/2008EP1989738A2 Noise isolation between circuit blocks in an integrated circuit chip
11/12/2008EP1989737A1 Quantum dot switching device
11/12/2008EP1989729A2 Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors
11/12/2008EP1989728A1 Process for forming a short channel trench mosfet and device
11/12/2008EP1911088A4 Metal gate mosfet by full semiconductor metal alloy conversion
11/12/2008EP1271647B1 Compound semiconductor device
11/12/2008EP1229591B1 Semiconductor device having drift regions of opposite conductivity types
11/12/2008EP1057218B1 A method of manufacturing a semiconductor device
11/12/2008EP0860883B1 Transistor and method of manufacturing the same
11/12/2008CN101305470A Semiconductor device and method for manufacturing same
11/12/2008CN101305469A Vertical diode doped with antimony to avoid or limit dopant diffusion
11/12/2008CN101305468A Amorphous oxide field-effect transistor having crystalline region at the semiconductor/dielectric interface
11/12/2008CN101305467A 多量子阱器件 A multiple quantum well device
11/12/2008CN101305465A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
11/12/2008CN101304048A Novel voltage protection device
11/12/2008CN101304047A Thin-film transistor
11/12/2008CN101304046A Thin film transistor and method for forming the same
11/12/2008CN101304045A Silicon nitride film and semiconductor device, and manufacturing method thereof
11/12/2008CN101304044A Semiconductor device and method of forming the same
11/12/2008CN101304043A Semiconductor structure
11/12/2008CN101304042A Semiconductor device and method for fabricating the same
11/12/2008CN101304041A Metal oxynitride gate
11/12/2008CN101304030A Semiconductor device and manufacturing method thereof
11/12/2008CN101304028A Semiconductor device and manufacturing method thereof
11/12/2008CN101303975A Fin filled effect transistor and method of forming the same
11/12/2008CN101303889A Memory cell and method for manufacturing non-volatile apparatus thereof
11/12/2008CN101303498A Liquid crystal display device
11/12/2008CN100433379C Light-emitting semiconductor device and method of fabrication
11/12/2008CN100433368C Thin film transistor and producing method thereof
11/12/2008CN100433367C Thinfilm transistor device for reducing leaping voltage
11/12/2008CN100433366C Structure of groove-grid MIS device and producing method thereof
11/12/2008CN100433365C Aluminium gallium nitride/gallium nitride high electronic migration rate transistor and its manufacturing method
11/12/2008CN100433364C Composite buffer layer nitride high electronic migration rate transmistor epitaxial structure and its manufacturing method
11/12/2008CN100433363C Transistor having three electrically isolated electrodes and method of formation
11/12/2008CN100433349C Active pioxel sensor
11/12/2008CN100433342C Photo-electric converting device and its driving method, and its manufacturing method, solid-state image pickup device and its driving method and its manufacturing method
11/12/2008CN100433341C Semiconductor photoreceptor
11/12/2008CN100433333C Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell
11/12/2008CN100433329C Self-correcting circuit for mismatch capacity
11/12/2008CN100433316C Lead free alloys for column/ball grid arrays, organic interposers and passive component assembly
11/12/2008CN100433303C Semiconductor device, module for optical devices, and manufacturing method of semiconductor device
11/12/2008CN100433302C Semiconductor micro device
11/12/2008CN100433293C Interconnection structure and method for forming the same
11/12/2008CN100433276C MOSFET device with localized stressor
11/12/2008CN100433275C Reduction of boron diffusivity in pFETS
11/12/2008CN100433258C Process for manufacturing vertically insulated structural components on SOI material of various thickness
11/12/2008CN100433193C Charge injection
11/12/2008CN100433187C Memory cells using gated diodes and methods of use thereof
11/12/2008CN100433183C Ferroelectric memory and operating method therefor
11/12/2008CN100433079C Active matrix panel
11/12/2008CN100432810C Liquid crystal display device
11/12/2008CN100432809C Gray mask and method for manufacturing gray mask
11/12/2008CN100432808C Multi-domain vertical alignment liquid crystal display panel and thin film transistor array thereof
11/12/2008CN100432807C Liquid crystal display unit
11/12/2008CN100432806C Array substrate of liquid crystal display and fabrication method thereof
11/12/2008CN100432805C Liquid crystal display and panel therefor
11/12/2008CN100432804C In-plane switching mode liquid crystal display device and method of fabricating the same
11/12/2008CN100432803C Liquid crystal display
11/12/2008CN100432761C Liquid-crystal display panel and its production
11/11/2008US7451292 Methods for transmitting data across quantum interfaces and quantum gates using same
11/11/2008US7450797 Beam switch structures and methods
11/11/2008US7450423 Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
11/11/2008US7450210 TFT active matrix liquid crystal display devices
11/11/2008US7450199 Reflection type liquid crystal display and a method for manufacturing the same
11/11/2008US7450192 Display device
11/11/2008US7450150 Integrated audio/video sensor
11/11/2008US7450100 Flat panel display
11/11/2008US7449785 Solder bump on a semiconductor substrate
11/11/2008US7449784 Device package and methods for the fabrication and testing thereof
11/11/2008US7449782 germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal
11/11/2008US7449780 Apparatus to minimize thermal impedance using copper on die backside
11/11/2008US7449777 Circuit arrangement comprising a power component and a drive circuit integrated in two semiconductor bodies
11/11/2008US7449767 Mixed orientation and mixed material semiconductor-on-insulator wafer
11/11/2008US7449764 Semiconductor device and method of manufacturing the same
11/11/2008US7449763 Method of fabricating cell of nonvolatile memory device with floating gate
11/11/2008US7449761 Electro-optical device, method for manufacturing electro-optical device, and electronic apparatus
11/11/2008US7449760 Magnetoresistive element, magnetic memory cell, and magnetic memory device
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