Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2008
10/02/2008US20080237679 Semiconductor devices with sidewall conductive patterns and methods of fabricating the same
10/02/2008US20080237677 Semiconductor variable capacitor and method of manufacturing the same
10/02/2008US20080237675 Capacitor, method of increasing a capacitance area of same, and system containing same
10/02/2008US20080237673 Semiconductor device, charge pumping circuit, and semiconductor memory circuit
10/02/2008US20080237663 Fabrication of self-aligned gallium arsenide mosfets using damascene gate methods
10/02/2008US20080237662 Semiconductor device and method of fabricating the same
10/02/2008US20080237661 Ultra-abrupt semiconductor junction profile
10/02/2008US20080237660 Method to deposit silicon film on a substrate
10/02/2008US20080237659 Semiconductor device and method of fabricating the same
10/02/2008US20080237658 Semiconductor device and method of fabricating the same
10/02/2008US20080237656 Isolated junction field-effect transistor
10/02/2008US20080237651 Charge transfer device
10/02/2008US20080237650 Electrode structure for fringe field charge injection
10/02/2008US20080237647 Integrated Circuits and Methods with Two Types of Decoupling Capacitors
10/02/2008US20080237646 Semiconductor integrated circuit device and method of producing the same
10/02/2008US20080237644 Spatially aware drive strength dependent die size independent combinatorial spare cell insertion manner and related system and method
10/02/2008US20080237643 Transistor
10/02/2008US20080237642 Method to Reduce Boron Penetration in a SiGe Bipolar Device
10/02/2008US20080237641 Surrounded-Channel Transistors with Directionally Etched Gate or Insulator Formation Regions
10/02/2008US20080237640 N-face high electron mobility transistors with low buffer leakage and low parasitic resistance
10/02/2008US20080237638 Semiconductor device
10/02/2008US20080237637 ULTRA SCALABLE HIGH SPEED HETEROJUNCTION VERTICAL n-CHANNEL MISFETS AND METHODS THEREOF
10/02/2008US20080237636 Transistor having tensile strained channel and system including same
10/02/2008US20080237634 Crystallographic recess etch for embedded semiconductor region
10/02/2008US20080237632 III-nitride power semiconductor device
10/02/2008US20080237631 High breakdown voltage semiconductor circuit device and method of manufacturing the same
10/02/2008US20080237630 Semiconductor switch
10/02/2008US20080237611 Electroluminescent device having improved contrast
10/02/2008US20080237610 Compound semiconductor device including ain layer of controlled skewness
10/02/2008US20080237609 Low Micropipe 100 mm Silicon Carbide Wafer
10/02/2008US20080237608 Molybdenum barrier metal for SiC Schottky diode and process of manufacture
10/02/2008US20080237606 Compound semiconductor device
10/02/2008US20080237605 Semiconductor device and manufacturing method of the same
10/02/2008US20080237602 Three dimensional nand memory
10/02/2008US20080237601 Transistors and semiconductor constructions
10/02/2008US20080237600 Thin film transistor
10/02/2008US20080237599 Memory cell comprising a carbon nanotube fabric element and a steering element
10/02/2008US20080237598 Thin film field effect transistor and display
10/02/2008US20080237597 Thin film transistor array panel and manufacturing method thereof
10/02/2008US20080237596 Liquid crystal display device and fabrication method thereof
10/02/2008US20080237595 Thin film transistor including titanium oxides as active layer and method of manufacturing the same
10/02/2008US20080237594 Pixel structure and manufacturing method thereof
10/02/2008US20080237593 Semiconductor Device, Method of Fabricating the Same, and Apparatus for Fabricating the Same
10/02/2008US20080237581 Device with phase-separated dielectric structure
10/02/2008US20080237580 Organic Semiconductor Element and Organic El Display Device Using the Same
10/02/2008US20080237579 Quantum computing device and method including qubit arrays of entangled states using negative refractive index lenses
10/02/2008US20080237578 Ultrahigh density patterning of conducting media
10/02/2008US20080237577 Forming a non-planar transistor having a quantum well channel
10/02/2008US20080237576 Voltage Controlled Computing Element for Quantum Computer
10/02/2008US20080237575 Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
10/02/2008US20080237574 Metal-Base Nanowire Transistor
10/02/2008US20080237573 Mechanism for forming a remote delta doping layer of a quantum well structure
10/02/2008US20080237572 Forming a type i heterostructure in a group iv semiconductor
10/02/2008US20080237568 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures
10/02/2008US20080237567 Optimized solid electrolyte for programmable metallization cell devices and structures
10/02/2008US20080237563 Diode/superionic conductor/polymer memory structure
10/02/2008US20080236745 Method and apparatus for fabricating or altering microstructures using local chemical alterations
10/02/2008US20080236279 Inertial sensor and fabrication method of inertial sensor
10/02/2008US20080236174 Thermoelectric devices and methods of manufacture
10/02/2008DE19830543B4 Halbleitereinrichtung mit Hohlraum zwischen den Isolationsseitenwandstücken und dem Halbleitersubstrat und Verfahren zu ihrer Herstellung Semiconductor device having the cavity between the insulating side wall pieces and the semiconductor substrate and process for their preparation
10/02/2008DE19732694B4 Nichtflüchtiges ferroelektrisches Speicherbauelement The non-volatile ferroelectric memory device
10/02/2008DE112006002952T5 Verfahren zur Herstellung von Halbleiteranordnungen und Strukturen derselben A process for the production of semiconductor devices and structures thereof
10/02/2008DE112006002876T5 MOSFETs und Verfahren zum Herstellen eines MOSFETs MOSFET and method of manufacturing a MOSFET
10/02/2008DE112006002392T5 Polymer, umfassend eine Einheit, umfassend einen Fluorcyclopentanring kondensiert mit einem aromatischen Ring, und organischer Dünnfilm und organisches Dünnfilmelement, die es beide umfassen Polymer comprising a unit comprising a fluorine cyclopentane ring condensed with an aromatic ring, and organic thin film and organic thin film element comprising it both
10/02/2008DE112004000699B4 Verfahren zur Herstellung einer Metallgatestruktur durch Abgleichen einer Austrittsarbeitsfunktion durch Siliziumeinbau A method of manufacturing a metal gate structure by adjusting a work function by silicon installation
10/02/2008DE10325748B4 Sperrschicht-Feldeffekttransistor (JFET) mit Kompensationsstruktur und Feldstoppzone Junction field-effect transistor (JFET) with compensation structure and field stop zone
10/02/2008DE102007034802A1 Lateraler Hochvolt-MOS-Transistor mit RESURF-Struktur A lateral high-voltage MOS transistor with RESURF structure
10/02/2008DE102007015504A1 SOI-Transistor mit Drain- und Sourcegebieten mit reduzierter Länge und einem dazu benachbarten verspannten dielektrischen Material SOI transistor with drain and source regions with a reduced length and are adjacent to each stressed dielectric material
10/02/2008DE102007015500A1 Verfahren zum Erzeugen einer Zugverspannung durch wiederholtes Anwenden von Verspannungsgedächtnisverfahren A method for generating a tensile stress by repeated application of stress memorization process
10/02/2008DE102007014962A1 Gateelektrodenstruktur, Mosfeldeffekttransistoren und Verfahren zu deren Herstellung Gate electrode structure, and method for their preparation Mosfeldeffekttransistoren
10/02/2008DE102004040523B4 Verfahren zur Herstellung von Feldringen A method for fabrication of field rings
10/02/2008DE102004021391B4 Verfahren zum Herstellen einer integrierten Halbleiterschaltungsanordnung A method of manufacturing a semiconductor integrated circuit arrangement
10/02/2008CA2652948A1 Schottky barrier diode and method of producing the same
10/01/2008EP1976340A2 Electro-optic device, method for manufacturing electro-optic device, circuit board, method for manufacturing circuit board, and electronic apparatus.
10/01/2008EP1976021A1 Semiconductor based high resistance
10/01/2008EP1976020A2 Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors
10/01/2008EP1976019A1 Thin film transistor including titanium oxides as active layer and method of manufacturing the same
10/01/2008EP1976018A2 Thin film field efect transistor and display
10/01/2008EP1976017A1 Semiconductor device
10/01/2008EP1976016A2 Compound semiconductor device
10/01/2008EP1976011A2 High breakdown voltage semiconductor circuit device and method of manufacturing the same
10/01/2008EP1976002A2 Semiconductor device and method for manufacturing the same
10/01/2008EP1975991A2 Diode having reduced on-resistance and associated method of manufacture
10/01/2008EP1975988A1 Multilayered semiconductor wafer and process for its production
10/01/2008EP1975121A1 Method for forming nano-dimensional clusters and setting ordered structures therefrom
10/01/2008EP1974390A1 Electronic element, current control device, arithmetic device, and display device
10/01/2008EP1974387A1 Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
10/01/2008EP1974377A1 Complementary metal oxide semiconductor
10/01/2008EP1974373A1 Methods of fabricating transistors including supported gate electrodes and related devices
10/01/2008EP1974372A2 Introduction of metal impurity to change workfunction of conductive electrodes
10/01/2008EP1974371A1 Air break for improved silicide formation with composite caps
10/01/2008EP1974369A2 A method of microminiaturizing a nano-structure
10/01/2008EP1825521A4 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
10/01/2008EP1787318A4 Method of forming ultra shallow junctions
10/01/2008EP1779439A4 Lateral channel transistor
10/01/2008EP1644982B1 Method for making semiconductor device including band-engineered superlattice
10/01/2008EP1366570A4 In service programmable logic arrays with ultra thin vertical body transistors
10/01/2008EP1366524A4 Open bit line dram with vertical ultra-thin body transistors
10/01/2008EP1358678A4 Programmable memory address and decode circuits with ultra thin vertical body transistors
10/01/2008EP1290734B1 Anode voltage sensor of a vertical power component and use for protecting against short circuits
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