| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 09/25/2008 | WO2008116040A1 Termination and contact structures for a high voltage gan-based heterojunction transistor |
| 09/25/2008 | WO2008116038A2 Cascode circuit employing a depletion-mode, gan-based fet |
| 09/25/2008 | WO2008115937A1 Doped wge to form dual metal gates |
| 09/25/2008 | WO2008115266A2 Growth of metallic nanodots using specific precursors |
| 09/25/2008 | WO2008115191A2 Nanowire on non-single crystal substrate for optoelectronic applications |
| 09/25/2008 | WO2008114838A1 METHOD FOR FORMING OHMIC ELECTRODE ON P-TYPE 4H-Sic SUBSTRATE |
| 09/25/2008 | WO2008114760A1 Piezo-diode cantilever mems |
| 09/25/2008 | WO2008114599A1 Active matrix substrate |
| 09/25/2008 | WO2008114598A1 Active matrix substrate |
| 09/25/2008 | WO2008114588A1 Sputtering target, oxide semiconductor film and semiconductor device |
| 09/25/2008 | WO2008114564A1 Thin film transistor and method for manufacturing thin film transistor |
| 09/25/2008 | WO2008114412A1 Semiconductor device and method for fabricating the same |
| 09/25/2008 | WO2008114336A1 Semiconductor element |
| 09/25/2008 | WO2008083469A8 Light emitting devices with a zinc oxide thin film structure |
| 09/25/2008 | WO2008011459A3 Power semiconductor devices having integrated inductor |
| 09/25/2008 | WO2007092529A8 Techniques for depositing metallic films using ion implantation surface modification for catalysis of electroless deposition |
| 09/25/2008 | WO2006122058A3 Transient blocking apparatus with electrostatic discharge protection |
| 09/25/2008 | WO2006121461A3 Light emitters using nanotubes and methods of making same |
| 09/25/2008 | US20080233764 Formation of Gate Insulation Film |
| 09/25/2008 | US20080233741 Bulk-Isolated PN Diode and Method of Forming a Bulk-Isolated PN Diode |
| 09/25/2008 | US20080233701 Methods of Forming Integrated Circuit Devices Including a Depletion Barrier Layer at Source/Drain Regions |
| 09/25/2008 | US20080233698 Semiconductor device and method of manufacturing the same |
| 09/25/2008 | US20080233696 Semiconductor device and method for fabricating the same |
| 09/25/2008 | US20080233665 Method of manufacturing a semiconductor device |
| 09/25/2008 | US20080233487 lithography focus and/or energy using a specially-designed optical critical dimension pattern. A wafer comprising a plurality of photomasks is received. Critical dimension, line-end shortening, and side wall angle of the plurality of photomasks are measured using an integrated metrology equipment. |
| 09/25/2008 | US20080231779 Display substrate and display apparatus having the same |
| 09/25/2008 | US20080231617 Display Device |
| 09/25/2008 | US20080231584 Active matrix type display device |
| 09/25/2008 | US20080230872 Bipolar transistor and method for manufacturing the same |
| 09/25/2008 | US20080230871 Semiconductor display device and method of manufacturing the same |
| 09/25/2008 | US20080230869 Ultra-thin soi vertical bipolar transistors with an inversion collector on thin-buried oxide (box) for low substrate-bias operation and methods thereof |
| 09/25/2008 | US20080230868 Pattern enhancement by crystallographic etching |
| 09/25/2008 | US20080230857 Sensor chip and substrate assembly for mems device |
| 09/25/2008 | US20080230856 Intermediate probe structures for atomic force microscopy |
| 09/25/2008 | US20080230855 Gate strip with reduced thickness |
| 09/25/2008 | US20080230854 Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials |
| 09/25/2008 | US20080230853 Channel layer arranged on substrate; source electrode and drain electrode, overcoating with dielectric then barrier electrode |
| 09/25/2008 | US20080230851 Metal oxide semiconductor (mos) type semiconductor device and manufacturing method thereof |
| 09/25/2008 | US20080230848 Structure having dual silicide region and related method |
| 09/25/2008 | US20080230846 Method of manufacturing metal silicide contacts |
| 09/25/2008 | US20080230845 Semiconductor device and method of forming the same |
| 09/25/2008 | US20080230844 Semiconductor Device with Multiple Silicide Regions |
| 09/25/2008 | US20080230842 Semiconductor Device Having High-K Gate Dielectric Layer and Method For Manufacturing the Same |
| 09/25/2008 | US20080230841 Integrated circuit system employing stress memorization transfer |
| 09/25/2008 | US20080230839 Method of producing a semiconductor structure |
| 09/25/2008 | US20080230837 Radiation-hardened silicon-on-insulator cmos device, and method of making the same |
| 09/25/2008 | US20080230835 Semiconductor device and manufacturing method thereof |
| 09/25/2008 | US20080230833 Semiconductor component and method for producing a semiconductor component |
| 09/25/2008 | US20080230832 Transistor and method for fabricating the same |
| 09/25/2008 | US20080230831 Semiconductor device and manufacturing method thereof |
| 09/25/2008 | US20080230830 Nonvolatile memory device and method of fabricating the same |
| 09/25/2008 | US20080230829 Memory device and method of fabricating the same |
| 09/25/2008 | US20080230827 Scalable flash/nv structures and devices with extended endurance |
| 09/25/2008 | US20080230826 Construction of flash memory chips and circuits from ordered nanoparticles |
| 09/25/2008 | US20080230825 Nonvolatile semiconductor memory device |
| 09/25/2008 | US20080230823 Semiconductor device and manufacturing method therefor |
| 09/25/2008 | US20080230820 Semiconductor device |
| 09/25/2008 | US20080230816 Semiconductor device and method of manufacturing the same |
| 09/25/2008 | US20080230815 Mitigation of gate to contact capacitance in CMOS flow |
| 09/25/2008 | US20080230814 Methods for fabricating a semiconductor device |
| 09/25/2008 | US20080230812 Isolated junction field-effect transistor |
| 09/25/2008 | US20080230811 Semiconductor Structure |
| 09/25/2008 | US20080230810 Insulated gate semiconductor device |
| 09/25/2008 | US20080230809 Semiconductor device and method of fabricating the same |
| 09/25/2008 | US20080230808 Heterojunction bipolar transistor |
| 09/25/2008 | US20080230807 Semiconductor Device |
| 09/25/2008 | US20080230805 Semiconductor device and method of manufacturing semiconductor device |
| 09/25/2008 | US20080230804 Semiconductor device and fabrication method of same |
| 09/25/2008 | US20080230803 Integrated Contact Interface Layer |
| 09/25/2008 | US20080230802 Semiconductor Device Comprising a Heterojunction |
| 09/25/2008 | US20080230801 Trench type power semiconductor device and method for manufacturing same |
| 09/25/2008 | US20080230800 N-Type Group III Nitride Semiconductor Layered Structure |
| 09/25/2008 | US20080230786 High temperature performance capable gallium nitride transistor |
| 09/25/2008 | US20080230785 Termination and contact structures for a high voltage GaN-based heterojunction transistor |
| 09/25/2008 | US20080230784 Cascode circuit employing a depletion-mode, GaN-based fet |
| 09/25/2008 | US20080230780 Group III Nitride Semiconductor Multilayer Structure |
| 09/25/2008 | US20080230774 Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet |
| 09/25/2008 | US20080230767 Semiconductor device and method of manufacturing the same |
| 09/25/2008 | US20080230766 Light emitting device |
| 09/25/2008 | US20080230764 Composite structure; charge carrier confining zone, barrier and electroconductive layer; uniformity |
| 09/25/2008 | US20080230763 Metallic Nanospheres Embedded in Nanowires Initiated on Nanostructures and Methods for Synthesis Thereof |
| 09/25/2008 | US20080230007 Method and apparatus for manufacturing active matrix device including top gate type tft |
| 09/25/2008 | DE112006002913T5 Speicherzelle auf der Basis eines negativen differentiellen Widerstandes mit versenktem Kanal Memory cell based on a negative differential resistance buried channel |
| 09/25/2008 | DE112004001030B4 FINFET mit Doppelsiliziumgateschicht für chemisch-mechanische Poliereinebnung FinFET with double gate silicon layer for chemical mechanical Poliereinebnung |
| 09/25/2008 | DE10354421B4 Verfahren zur Herstellung einer Gatekontaktstruktur eines Trench-Hochleistungstransistors und mit diesem Verfahren hergestellter Hochleistungstransistor A process for producing a structure of a gate contact trench and high power transistor manufactured with this method, high power transistor |
| 09/25/2008 | DE10349582B4 Halbleiterdiode sowie dafür geeignetes Herstellungsverfahren Semiconductor diode as well as for suitable manufacturing process |
| 09/25/2008 | DE10324100B4 Verfahren zur Herstellung eines robusten Halbleiterbauelements Process for the preparation of a robust semiconductor device |
| 09/25/2008 | DE10312911B4 Halbleiterbauelement mit platzsparendem Randabschluss Semiconductor component with space saving edge termination |
| 09/25/2008 | DE10297679B4 Dotierverfahren für vollständig verarmte SOI-Strukturen Doping for fully depleted SOI structures |
| 09/25/2008 | DE102008014338A1 Halbleitervorrichtung mit MIS-Transistor des lateralen Typs A semiconductor device having a lateral type MIS transistor |
| 09/25/2008 | DE102008014071A1 Siliciumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device |
| 09/25/2008 | DE102008000660A1 Siliziumkarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung Silicon carbide semiconductor device and process for their preparation |
| 09/25/2008 | DE102007057222A1 Transistor mit isoliertem Gate Insulated gate transistor |
| 09/25/2008 | DE102007014038A1 Semiconductor component has semiconductor body with semiconductor area of conductor type and another semiconductor area of conductor type, and third semiconductor area of former conductor type is complementary for latter conductor type |
| 09/25/2008 | DE102007013848A1 Semiconductor component i.e. MOSFET, has floating doped regions electrically connected with field plates and formed complementary to drift distance, where field plates are coupled with field plates voltage limiting structure |
| 09/25/2008 | DE10160118B4 Halbleiterelement Semiconductor element |
| 09/24/2008 | EP1973165A1 Silicon carbide bipolar semiconductor device |
| 09/24/2008 | EP1973164A2 Thin film transistor and organic light emitting device including thin film transistor |
| 09/24/2008 | EP1973163A2 High temperature performance capable gallium nitride transistor |
| 09/24/2008 | EP1973149A1 Laser annealing method and laser annealing apparatus |