Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2008
11/20/2008US20080283941 Fabrication of transistors with a fully silicided gate electrode and channel strain
11/20/2008US20080283940 LOW-TEMPERATURE GROWN HIGH QUALITY ULTRA-THIN CoTiO3 GATE DIELECTRICS
11/20/2008US20080283938 Semiconductor device and method for manufacturing the same
11/20/2008US20080283935 Trench isolation structure and method of manufacture therefor
11/20/2008US20080283934 Substantially l-shaped silicide for contact and related method
11/20/2008US20080283933 Oxygen-rich layers underlying BPSG
11/20/2008US20080283932 Semiconductor Device Manufactured Using a Gate Silicidation Involving a Disposable Chemical/Mechanical Polishing Stop Layer
11/20/2008US20080283930 Extended depth inter-well isolation structure
11/20/2008US20080283924 Semiconductor device and method for fabricating the same
11/20/2008US20080283923 Semiconductor device and manufacturing method thereof
11/20/2008US20080283922 Semiconductor device and manufacturing method thereof
11/20/2008US20080283921 Dual-gate nmos devices with antimony source-drain regions and methods for manufacturing thereof
11/20/2008US20080283920 Hybrid oriented substrates and crystal imprinting methods for forming such hybrid oriented substrates
11/20/2008US20080283919 Single and double-gate pseudo-fet devices for semiconductor materials evaluation
11/20/2008US20080283918 Ultra Thin Channel (UTC) MOSFET Structure Formed on BOX Regions Having Different Depths and Different Thicknesses Beneath the UTC and SourceDrain Regions and Method of Manufacture Thereof
11/20/2008US20080283917 Methods for fabricating a semiconductor structure using a mandrel and semiconductor structures formed thereby
11/20/2008US20080283916 Semiconductor substrate, semiconductor device and manufacturing method thereof
11/20/2008US20080283915 High voltage semiconductor device and method of manufacturing the same
11/20/2008US20080283914 Semiconductor device and method for manufacturing the same
11/20/2008US20080283912 Semiconductor device having super junction structure and method of manufacturing the same
11/20/2008US20080283911 High-voltage semiconductor device and method for manufacturing the same
11/20/2008US20080283910 Integrated circuit and method of forming an integrated circuit
11/20/2008US20080283909 Semiconductor device and method for manufacturing same
11/20/2008US20080283907 Semiconductor device and method of manufacturing the same
11/20/2008US20080283906 Semiconductor device having tipless epitaxial source/drain regions
11/20/2008US20080283904 Two-bit flash memory cell and method for manufacturing the same
11/20/2008US20080283903 Transistor With Quantum Dots in Its Tunnelling Layer
11/20/2008US20080283902 Non-volatile memory device and method of manufacturing the same
11/20/2008US20080283901 Nonvolatile memory with multiple bits per cell
11/20/2008US20080283900 Semiconductor device and method for manufacturing the same
11/20/2008US20080283899 Conductive spacers extended floating gates
11/20/2008US20080283898 Non-volatile semiconductor memory device and method of manufacturing the same
11/20/2008US20080283897 Flash memory device and fabrication method thereof
11/20/2008US20080283896 Nonvolatile semiconductor memory device with twin-well
11/20/2008US20080283895 Memory structure and fabricating method thereof
11/20/2008US20080283894 Forming floating body RAM using bulk silicon substrate
11/20/2008US20080283893 Illuminating efficiency-increasable and light-erasable embedded memory structure and fabricating method thereof
11/20/2008US20080283892 Cylinder-Type Capacitor and Storage Device, and Method(s) for Fabricating the Same
11/20/2008US20080283891 Semiconductor structure and manufacturing method thereof
11/20/2008US20080283890 Deep trench inter-well isolation structure
11/20/2008US20080283889 Semiconductor device
11/20/2008US20080283888 Spin transistor, programmable logic circuit, and magnetic memory
11/20/2008US20080283882 Semiconductor device
11/20/2008US20080283879 Transistor having gate dielectric layer of partial thickness difference and method of fabricating the same
11/20/2008US20080283878 Method and Apparatus for Monitoring Endcap Pullback
11/20/2008US20080283877 Strained-channel transistor device
11/20/2008US20080283876 Noise detection circuit
11/20/2008US20080283875 Field effect transistor, biosensor provided with it, and detecting method
11/20/2008US20080283874 Field-Effect Transistors
11/20/2008US20080283871 Semiconductor integrated circuit
11/20/2008US20080283870 Field-effect semiconductor device
11/20/2008US20080283868 Semiconductor Device
11/20/2008US20080283867 Semiconductor device
11/20/2008US20080283862 Side-emission type semiconductor light-emitting device and manufacturing method thereof
11/20/2008US20080283851 GaN Substrate, and Epitaxial Substrate and Semiconductor Light-Emitting Device Employing the Substrate
11/20/2008US20080283848 Semiconductor device and method for manufacturing the same
11/20/2008US20080283845 Silicon carbide semiconductor device having high channel mobility and method for manufacturing the same
11/20/2008US20080283844 Method for manufacturing a field effect transistor having a field plate
11/20/2008US20080283842 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
11/20/2008US20080283841 Tft substrate and manufacturing method, and display device with the same
11/20/2008US20080283840 Thin film transistor device and method of manufacturing the same, and liquid crystal display device
11/20/2008US20080283839 Non-volatile semiconductor storage device and manufacturing method thereof
11/20/2008US20080283837 Semiconductor device
11/20/2008US20080283835 Semiconductor device and method of manufacturing the same
11/20/2008US20080283834 Electrochromic display
11/20/2008US20080283833 Thin Film Transistor Array Panel and Manufacturing Method Thereof
11/20/2008US20080283832 Integrated Circuit Comprising an Amorphous Region and Method of Manufacturing an Integrated Circuit
11/20/2008US20080283831 ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
11/20/2008US20080283830 Zinc-tin oxide thin-film transistors
11/20/2008US20080283825 Dual-Gate Transistors
11/20/2008US20080283824 Method and structure for forming strained si for cmos devices
11/20/2008US20080283823 Gallium Nitride-Based Semiconductor Stacked Structure
11/20/2008DE102008023519A1 Halbleiterbauteil mit isolierter Steuerelektrode und Verfahren zu seiner Herstellung A semiconductor device comprising insulated gate electrode and method for its preparation
11/20/2008DE102008023474A1 Halbleitervorrichtung mit Super-Junction-Struktur und Verfahren zu deren Fertigung Semiconductor device with super junction structure and process for their production
11/20/2008DE102008023349A1 Halbleitervorrichtung Semiconductor device
11/20/2008DE102008022539A1 Halbleiterbauelement und Verfahren zu seiner Herstellung Semiconductor device and process for its preparation
11/20/2008DE102007029121B3 Verfahren zur Herstellung eines Halbleiterbauelements, sowie Halbleiterbauelement A process for producing a semiconductor device, and semiconductor device
11/20/2008DE102005062532B4 Halbleiterbauelement und Kontaktstellenherstellungsverfahren A semiconductor device manufacturing method and contact points
11/20/2008DE102004052581B4 Verfahren zur Herstellung einer CMOS-Gatestruktur mit einem vordotierten Halbleitergatematerial A method of manufacturing a CMOS gate structure having a pre-doped semiconductor gate material
11/20/2008CA2673838A1 Instantaneous electrodeposition of metal nanostructures on carbon nanotubes
11/19/2008EP1993141A1 ZnO-based thin film transistor and method of manufacturing the same
11/19/2008EP1993140A1 Nitride-based semiconductor substrate and semiconductor device
11/19/2008EP1993138A2 Device with a strained-channel transistor
11/19/2008EP1993136A1 Multi-gate MOSFET device and method of manufacturing same
11/19/2008EP1993130A2 Semiconductor device and method for manufacturing the same
11/19/2008EP1993128A2 Method for manufacturing soi substrate
11/19/2008EP1993126A2 Manufacturing methods of semiconductor substrate, thin film transistor and semiconductor device
11/19/2008EP1992016A2 Flip-chip device having underfill in controlled gap
11/19/2008EP1991499A1 Method for metal-free synthesis of epitaxial semiconductor nanowires on si
11/19/2008EP1800343A4 Mos varactor using isolation well
11/19/2008EP1384232A4 Dynamic data restore in thyristor-based memory device
11/19/2008EP1371097B1 Structure for protection against radio disturbances
11/19/2008EP1110242B1 Thermal capacity for electronic component operating in long pulses
11/19/2008CN201153122Y Semiconductor rectifier device
11/19/2008CN101310389A 金属基极纳米线晶体管 Base metal nanowire transistors
11/19/2008CN101310388A MOSFET and method for manufacturing MOSFET
11/19/2008CN101310386A Hybrid substrate technology for high-mobility planar and multiple-gate mosfets
11/19/2008CN101310368A Dielectric media including surface-treated metal oxide particles
11/19/2008CN101309864A Semiconductor thin film, method for producing same, and thin film transistor
11/19/2008CN101309863A Semiconductor thin film, method for producing same, thin film transistor and active-matrix-driven display panel
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