Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
09/2014
09/25/2014US20140284721 Finfet device formation
09/25/2014US20140284720 Semiconductor device for electrostatic discharge protection
09/25/2014US20140284718 Method of reducion graphene oxide and reduced graphene oxide obtained by the method, and thin film transistor including the reduced graphene oxide
09/25/2014US20140284717 Semiconductor structure with deep trench thermal conduction
09/25/2014US20140284716 Ldmos device with minority carrier shunt region
09/25/2014US20140284715 Method of manufacturing semiconductor device
09/25/2014US20140284714 Semiconductor device
09/25/2014US20140284712 Semiconductor device and manufacturing method thereof
09/25/2014US20140284711 Semiconductor apparatus
09/25/2014US20140284710 Insulated gate semiconductor device having shield electrode structure
09/25/2014US20140284709 Semiconductor device
09/25/2014US20140284708 Semiconductor device and method for manufacturing same
09/25/2014US20140284707 Semiconductor device and method for manufacturing the same
09/25/2014US20140284706 Quasi-vertical structure having a sidewall implantation for high voltage mos device
09/25/2014US20140284705 Method of manufacturing vertical planar power mosfet and method of manufacturing trench-gate power mosfet
09/25/2014US20140284704 Semiconductor device
09/25/2014US20140284703 Vertical double-diffusion mos and manufacturing technique for the same
09/25/2014US20140284702 Field plate trench transistor and method for producing it
09/25/2014US20140284701 Power device integration on a common substrate
09/25/2014US20140284700 Semiconductor device
09/25/2014US20140284699 Semiconductor memory device and method for manufacturing same
09/25/2014US20140284696 Oxide-nitride-oxide stack having multiple oxynitride layers
09/25/2014US20140284695 Vertical cell-type semiconductor device having protective pattern
09/25/2014US20140284694 Nonvolatile semiconductor memory device and method for manufacturing same
09/25/2014US20140284693 Nonvolatile semiconductor memory device and method for manufacturing same
09/25/2014US20140284692 Nonvolatile semiconductor memory device and method for manufacturing same
09/25/2014US20140284691 Method for manufacturing semiconductor memory device and semiconductor memory device
09/25/2014US20140284690 Semiconductor device
09/25/2014US20140284688 Nonvolatile semiconductor memory device, capacitance element, and method for manufacturing nonvolatile semiconductor memory device
09/25/2014US20140284686 Method for manufacturing semiconductor memory device and semiconductor memory device
09/25/2014US20140284685 Nonvolatile semiconductor memory device and method for manufacturing same
09/25/2014US20140284684 Semiconductor memory device
09/25/2014US20140284683 Semiconductor device and manufacturing method of semiconductor device
09/25/2014US20140284682 Nonvolatile semiconductor storage device
09/25/2014US20140284681 Semiconductor device and method for manufacturing semiconductor device
09/25/2014US20140284680 Nonvolatile memory
09/25/2014US20140284679 Nonvolatile semiconductor memory device
09/25/2014US20140284678 Non-volatile memory and manufacturing method thereof
09/25/2014US20140284677 Non-volatile semiconductor memory device
09/25/2014US20140284675 Nonvolatile semiconductor memory device
09/25/2014US20140284668 Semiconductor device and method for manufacturing the same
09/25/2014US20140284667 Finfet with reduced capacitance
09/25/2014US20140284666 Insulated gate field effect transistor having passivated schottky barriers to the channel
09/25/2014US20140284661 Monolithic integrated circuit (mmic) structure and method for forming such structure
09/25/2014US20140284660 Method for manufacturing semiconductor wafer, and semiconductor wafer
09/25/2014US20140284659 Transient Voltage Suppressor, Design and Process
09/25/2014US20140284657 Semiconductor device and method for manufacturing semiconductor device
09/25/2014US20140284656 Mos semiconductor device
09/25/2014US20140284643 Power surface mount light emitting die package
09/25/2014US20140284628 Wafer and method of fabricating the same
09/25/2014US20140284627 Wafer and method of fabricating the same
09/25/2014US20140284626 Enhanced dislocation stress transistor
09/25/2014US20140284625 Manufacturing method of semiconductor device and semiconductor device
09/25/2014US20140284624 Semiconductor Component, Semiconductor Module and Methods for Producing a Semiconductor Component and a Semiconductor Module
09/25/2014US20140284623 Semiconductor device and method of manufacturing the same
09/25/2014US20140284622 Semiconductor device and method of manufacturing the same
09/25/2014US20140284621 Semiconductor device and method of manufacturing the same
09/25/2014US20140284620 Semiconductor device
09/25/2014US20140284619 Sic epitaxial wafer and semiconductor device
09/25/2014US20140284618 Semiconductor device and method of fabricating the same
09/25/2014US20140284616 Self-formation of high-density arrays of nanostructures
09/25/2014US20140284615 Method for manufacturing a silicon carbide device and a silicon carbide device
09/25/2014US20140284613 Semiconductor device and method of manufacturing the same
09/25/2014US20140284609 Method and Substrate for Thick III-N Epitaxy
09/25/2014US20140284606 Method of fabricating pixel structure and pixel structure thereof
09/25/2014US20140284604 Semiconductor structure for extreme ultraviolet electrostatic chuck with reduced clamping effect
09/25/2014US20140284602 Semiconductor device and manufacturing method thereof
09/25/2014US20140284601 Thin film transistor
09/25/2014US20140284600 Arithmetic circuit and method of driving the same
09/25/2014US20140284599 Semiconductor device and manufacturing method thereof
09/25/2014US20140284597 Oxide semiconductor film and method for forming oxide semiconductor film
09/25/2014US20140284596 Oxide semiconductor
09/25/2014US20140284595 Semiconductor device and manufacturing method of the same
09/25/2014US20140284593 Semiconductor device and method for manufacturing the same
09/25/2014US20140284552 Graphene base transistor with reduced collector area
09/25/2014US20140284547 Self-formation of high-density arrays of nanostructures
09/25/2014US20140283901 Nanostructure, nanostructure fabrication method, and photovoltaic cell incorporating a nanostructure
09/25/2014US20140283618 Semiconductor device and strain monitor
09/25/2014DE112012004930T5 Kontaktstrukturen für Halbleitertransistoren Contact structures for semiconductor transistors
09/25/2014DE112011105973T5 Halbleitervorrichtung mit metallischen Quellen- und Senkenregionen A semiconductor device with metallic source and drain regions
09/25/2014DE112011105972T5 III-V Schichten fir N-Typ- und P-Typ-MOS-Source/Drain-Kontakte III-V layers fir N-type and P-type MOS source / drain contacts
09/25/2014DE112011105970T5 CMOS-Implementierung aus Germanium und lll-V-Nanodrähten und -Nanobändern in Gate-Rundum-Architektur CMOS implementation of germanium and III-V nanowires and -Nanobändern in gate-all-around architecture
09/25/2014DE112011105965T5 Transistoren mit verformtem Kanalbereich unter Verwendung von Source- und Drain-Spannungserzeugern und System mit denselben Transistors with channel deformed area using source and drain voltage generators and system using the same
09/25/2014DE112011105945T5 Gruppe III-N Nanodraht-Transistoren Group III-N nanowire transistors
09/25/2014DE112011105925T5 Dielektrische Zwischenschicht für nichtplanare Transistoren Interlayer dielectric for non-planar transistors
09/25/2014DE102014104108A1 Grabenelektrodenanordnung Grave electrode assembly
09/25/2014DE102014104103A1 Verfahren und Substrat für dicke III-N-Epitaxieschichten A method and substrate for thick III-N-epitaxial layers
09/25/2014DE102010060229B4 Halbleitervorrichtung mit Halbleiterzonen, Herstellungsverfahren hierfür und Integrierte Schaltung A semiconductor device comprising semiconductor zones, manufacturing method thereof and Integrated circuit
09/25/2014DE102010038910B4 Halbleitervorrichtung mit Durchgangselektrode und Herstellungsverfahren A semiconductor device having through-electrode and production method
09/25/2014DE102008011648B4 SIC-Halbleitervorrichtung und Verfahren zu deren Fertigung SiC semiconductor device, and methods for their production
09/24/2014EP2782140A1 Semiconductor device
09/24/2014EP2782138A2 Semiconductor device and method for manufacturing the same
09/24/2014EP2782137A1 Method for manufacturing semiconductor device, and semiconductor device
09/24/2014EP2782135A2 Display device, thin film transistor, method for manufacturing display device, and method for manufacturing thin film transistor
09/24/2014EP2782130A1 High-voltage-resistance semiconductor device
09/24/2014EP2782122A2 Manufacturing method of JFET semiconductor device and JFET semiconductor device
09/24/2014EP2782121A1 Semiconductor device and method for manufacturing semiconductor device
09/24/2014EP2781923A1 Acceleration sensor
09/24/2014EP2780945A1 Optical tilted charge devices and methods
09/24/2014EP2780579A1 Device and method for testing the state of the connection of a load connected to a connection point
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