Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2010
01/14/2010US20100006935 Breakdown Voltages of Ultra-High Voltage Devices By Forming Tunnels
01/14/2010US20100006934 Gate Electrodes of HVMOS Devices Having Non-Uniform Doping Concentrations
01/14/2010US20100006933 Stabilizing Breakdown Voltages by Forming Tunnels for Ultra-High Voltage Devices
01/14/2010US20100006931 Vertical drain extended mosfet transistor with vertical trench field plate
01/14/2010US20100006930 Semiconductor device, manufacturing method thereof, and data processing system
01/14/2010US20100006929 Semiconductor device and method of manufacturing the same
01/14/2010US20100006928 Structure and Method for Forming a Shielded Gate Trench FET with an Inter-electrode Dielectric Having a Low-k Dielectric Therein
01/14/2010US20100006927 Charge Balance Techniques for Power Devices
01/14/2010US20100006925 Non-volatile two transistor memory cell and method for producing the same
01/14/2010US20100006923 Semiconductor device and method for manufacturing the same
01/14/2010US20100006922 Nonvolatile semiconductor memory device
01/14/2010US20100006921 Semiconductor memory, semiconductor memory system using the same, and method for producing quantum dots applied to semiconductor memory
01/14/2010US20100006920 Semiconductor memory device and manufacturing method thereof
01/14/2010US20100006919 Non-volatile memory device and method of fabrication
01/14/2010US20100006918 Hafnium tantalum titanium oxide films
01/14/2010US20100006917 Semiconductor device and method of manufacturing the same
01/14/2010US20100006916 Non-volatile memory
01/14/2010US20100006915 Dielectric layer above floating gate for reducing leakage current
01/14/2010US20100006914 Nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device
01/14/2010US20100006912 Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same
01/14/2010US20100006907 Semiconductor device and method of manufacturing the same
01/14/2010US20100006906 Semiconductor device, single crystalline silicon wafer, and single crystalline silicon ingot
01/14/2010US20100006905 Semiconductor memory device
01/14/2010US20100006903 Semiconductor Device Portion Having Sub-193 Nanometers-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks and Having Corresponding Non-Symmetric Diffusion Regions
01/14/2010US20100006902 Semiconductor Device Portion Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks and Having Corresponding Non-Symmetric Diffusion Regions
01/14/2010US20100006901 Semiconductor Device Portion Having Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks and Having Corresponding Non-Symmetric Diffusion Regions
01/14/2010US20100006899 Semiconductor Device Portion Having Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features and Having Equal Number of PMOS and NMOS Transistors
01/14/2010US20100006898 Semiconductor Device Layout Including Cell Layout Having Restricted Gate Electrode Level Layout with Rectangular Shaped Gate Electrode Layout Features and At Least Eight Transistors
01/14/2010US20100006897 Semiconductor Device Layout Having Restricted Layout Region Including Rectangular Shaped Gate Electrode Layout Features and Equal Number of PMOS and NMOS Transistors
01/14/2010US20100006896 Semiconductor integrated circuit
01/14/2010US20100006895 Iii-nitride semiconductor device
01/14/2010US20100006894 Semiconductor device and method for manufacturing the same
01/14/2010US20100006893 Strained layers within semiconductor buffer structures
01/14/2010US20100006891 Semiconductor thyristor device
01/14/2010US20100006889 Low clamp voltage esd device and method therefor
01/14/2010US20100006866 Light emitting device, driving method for the same and electronic apparatus
01/14/2010US20100006865 Semiconductor module for power generation or light emission
01/14/2010US20100006861 Silicon carbide semiconductor device and manufacturing method of the same
01/14/2010US20100006860 Method for improving inversion layer mobility in a silicon carbide mosfet
01/14/2010US20100006859 Method of Manufacturing Substrates Having Improved Carrier Lifetimes
01/14/2010US20100006857 Multilayer structure and fabrication thereof
01/14/2010US20100006855 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
01/14/2010US20100006854 Semiconductor device and manufacturing method thereof
01/14/2010US20100006853 Electronic device and method of manufacturing the same
01/14/2010US20100006852 Thin film transistor and method of fabricating the same
01/14/2010US20100006851 Thin film transistor and method of manufacturing the same
01/14/2010US20100006850 Beol compatible fet structure
01/14/2010US20100006849 Thin Film Transistors
01/14/2010US20100006848 Semiconductor device
01/14/2010US20100006847 Semiconductor device, display apparatus, photo-electrical apparatus, and method for fabricating the same
01/14/2010US20100006846 Light-emitting device and method for manufacturing the same
01/14/2010US20100006841 Dual metal gate transistor with resistor having dielectric layer between metal and polysilicon
01/14/2010US20100006840 Mems/nems structure comprising a partially monocrystalline anchor and method for manufacturing same
01/14/2010US20100006837 Composition for oxide semiconductor thin film, field effect transistor using the composition and method of fabricating the transistor
01/14/2010US20100006836 Epitaxial growth method, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
01/14/2010US20100006835 Display substrate
01/14/2010US20100006834 Channel layers and semiconductor devices including the same
01/14/2010US20100006833 Thin film transistor, method of manufacturing the same and flat panel display device having the same
01/14/2010US20100006823 Semiconducting Device Having Graphene Channel
01/14/2010US20100006821 Nanoscale multi-junction quantum dot device and fabrication method thereof
01/14/2010US20100006820 Silica nanowire comprising silicon nanodots and method of preparing the same
01/14/2010US20100006816 Self-aligned vertical bipolar junction transistor for phase change memories
01/14/2010US20100006812 Carbon-based resistivity-switching materials and methods of forming the same
01/14/2010US20100006777 Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
01/14/2010US20100006776 Semiconductor thin film forming system
01/14/2010US20100005886 Sensor and its fabrication process
01/14/2010DE10361010B4 Organische Elektrolumineszenz-Anzeigevorrichtung und Verfahren zu deren Herstellung The organic electroluminescence display device and methods for their preparation
01/14/2010DE10355581B4 Verfahren und Technik zur Herstellung einer Gateelektrode unter Anwendung einer Hartmaske Methods and technologies for the production of a gate electrode by using a hard mask
01/14/2010DE102009031499A1 Halbleitersensor mit Heizung auf dem Isolationsfilm und Herstellungsverfahren hierfür A semiconductor sensor with heating on the insulating film and manufacturing method thereof
01/14/2010DE102009030957A1 Verfahren zum Herstellen einer Halbleiteranordnung mittels Ätzung eines Halbleiterchips und Halbleiteranordnung A method of manufacturing a semiconductor arrangement by means of etching of a semiconductor chip and semiconductor device
01/14/2010DE102009030510A1 Aufbau und Verfahren zum Ausbilden eines Trench-FET mit abgeschirmtem Gate mit einem Zwischenelektroden-Dielektrikum mit einer Nitridschicht darin Structure and method for forming a trench-shielded gate FET with an inter-electrode dielectric with a nitride layer is
01/14/2010DE102009025601A1 Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices
01/14/2010DE102008062482A1 Dünnschichttransistor und Verfahren zu dessen Herstellung Thin-film transistor and method of producing the
01/14/2010DE102008031819A1 Drei- oder Mehrtorbauelement auf Basis des Tunneleffekts Three or Mehrtorbauelement based on the tunneling effect
01/14/2010DE102008030864A1 Doppelgate- und Tri-Gatetransistor, die auf einem Vollsubstrat aufgebaut sind und Verfahren zur Herstellung des Transistors Doppelgate- and tri-gate transistor constructed on a solid substrate and methods for producing the transistor
01/14/2010DE10162947B4 Eine Halbleitervorrichtung mit Abschirmung A semiconductor device having shielding
01/14/2010CA2729194A1 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
01/13/2010EP2144295A2 Spin injection device having a shared superconductor electrode
01/13/2010EP2144294A1 Thin film transistor, method of manufacturing the same and flat panel display device having the same
01/13/2010EP2144277A2 A transistor of SiC having an insulated gate
01/13/2010EP2143143A1 Semiconductor structure having plural back-barrier layers for improved carrier confinement
01/13/2010EP2143134A2 Integrated electronic circuit including a thin film portion based on hafnium oxide
01/13/2010EP2143109A2 A method of driving a semiconductor memory device and a semiconductor memory device
01/13/2010EP1685584B1 SILICON DEVICE ON Si:C-OI and SGOI AND METHOD OF MANUFACTURE
01/13/2010EP1576657B1 Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication
01/13/2010EP1065726B1 Silicon carbide junction-gate field effect transistor
01/13/2010CN201383498Y Semiconductor diode chip
01/13/2010CN101627476A Metal-insulator-metal (MIM) devices and their methods of fabrication
01/13/2010CN101626036A Thin film transistor, method of manufacturing the thin film transistor and flat panel display device having the thin film transistor
01/13/2010CN101626035A Poly silicon thin film transistor and method of fabricating the same
01/13/2010CN101626034A Poly silicon thin film transistor and method of fabricating the same
01/13/2010CN101626033A Structure and method for forming a shielded gate trench fet with an inter-electrode dielectric having a low-k dielectric therein
01/13/2010CN101626032A Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices
01/13/2010CN101626031A Gate electrodes of hvmos devices having non-uniform doping concentrations
01/13/2010CN101624168A Sensor and its fabrication process
01/13/2010CN100580973C Film transistor, wiring substrate, display device and electronic device
01/13/2010CN100580957C Metastable state assistant quantum dot resonance tunneling diode and working condition
01/13/2010CN100580956C Capacitance dynamic quantity sensor
01/13/2010CN100580955C Thin film transistor and liquid crystal display device using the same
01/13/2010CN100580954C Wide bandgap HEMTS with source connected field plates