| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/28/2010 | US20100019346 Ic having flip chip passive element and design structure |
| 01/28/2010 | US20100019342 Semiconductor device |
| 01/28/2010 | US20100019333 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer |
| 01/28/2010 | US20100019330 Device structures with a self-aligned damage layer and methods for forming such device structures |
| 01/28/2010 | US20100019322 Semiconductor device and method of manufacturing |
| 01/28/2010 | US20100019321 MULTIPLE-GATE MOS TRANSISTOR USING Si SUBSTRATE AND METHOD OF MANUFACTURING THE SAME |
| 01/28/2010 | US20100019320 Direct Contact to Area Efficient Body Tie Process Flow |
| 01/28/2010 | US20100019319 Manufacturing method of thin-film transistor, thin-film transistor sheet, and electric circuit |
| 01/28/2010 | US20100019318 Device for esd protection circuit |
| 01/28/2010 | US20100019317 Managing Integrated Circuit Stress Using Stress Adjustment Trenches |
| 01/28/2010 | US20100019316 Method of fabricating super trench MOSFET including buried source electrode |
| 01/28/2010 | US20100019315 Semiconductor device having a device isolation trench |
| 01/28/2010 | US20100019314 Semiconductor device and manufacturing method for semiconductor device |
| 01/28/2010 | US20100019313 Semiconductor circuit including a long channel device and a short channel device |
| 01/28/2010 | US20100019312 Semiconductor device and method for manufacturing the same |
| 01/28/2010 | US20100019311 Semiconductor memory device and manufacturing method thereof |
| 01/28/2010 | US20100019310 Semiconductor memory device |
| 01/28/2010 | US20100019309 Multi-level flash memory structure |
| 01/28/2010 | US20100019307 Method of fabricating flash memory device |
| 01/28/2010 | US20100019305 Semiconductor device and method of manufacturing the same |
| 01/28/2010 | US20100019303 Method for forming conductive pattern, semiconductor device using the same and method for fabricating semiconductor device using the same |
| 01/28/2010 | US20100019300 Multilayer integrated circuit having an inductor in stacked arrangement with a distributed capacitor |
| 01/28/2010 | US20100019298 Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding |
| 01/28/2010 | US20100019295 Single photon avalanche diodes |
| 01/28/2010 | US20100019292 Transistor having a metal nitride layer pattern, etchant and methods of forming the same |
| 01/28/2010 | US20100019291 JFET Devices with PIN Gate Stacks and Methods of Making the Same |
| 01/28/2010 | US20100019290 Junction Field Effect Transistor Using a Silicon on Insulator Architecture |
| 01/28/2010 | US20100019289 Junction Field Effect Transistor Using Silicide Connection Regions and Method of Fabrication |
| 01/28/2010 | US20100019279 Integrated HEMT and Lateral Field-Effect Rectifier Combinations, Methods, and Systems |
| 01/28/2010 | US20100019278 Multilayer Structure Comprising A Substrate and A Layer Of Silicon and Germanium Deposited Heteroepitaxially Thereon, and A Process For Producing It |
| 01/28/2010 | US20100019277 Epitaxial substrate for field effect transistor |
| 01/28/2010 | US20100019276 All around gate type semiconductor device and method of manufacturing the same |
| 01/28/2010 | US20100019274 Semiconductor device |
| 01/28/2010 | US20100019273 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device |
| 01/28/2010 | US20100019250 Semiconductor device and method of forming the same |
| 01/28/2010 | US20100019249 JFET Devices with Increased Barrier Height and Methods of Making Same |
| 01/28/2010 | US20100019248 Gallium nitride material devices including conductive regions and methods associated with the same |
| 01/28/2010 | US20100019242 Semiconductor device and manufacturing method thereof, soi substrate and display device using the same, and manufacturing method of the soi substrate |
| 01/28/2010 | US20100019240 Resistive memory device and method for fabricating the same |
| 01/28/2010 | US20100019239 Method of fabricating zto thin film, thin film transistor employing the same, and method of fabricating thin film transistor |
| 01/28/2010 | US20100019238 Hydrazine-free solution deposition of chalcogenide films |
| 01/28/2010 | US20100019227 Variable capacitor single-electron device cross-reference to related applications |
| 01/28/2010 | US20100019226 Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device |
| 01/28/2010 | US20100019219 Resistive memory device and method for manufacturing the same |
| 01/28/2010 | US20100019175 Semiconductor manufacturing device and beam-shaping mask |
| 01/28/2010 | DE112008000636T5 Verfahren zum Bilden von verbesserten EPI-Füllungen auf schmalen durch Isolierung begrenzten Source/Drain-Regionen und dadurch gebildete Strukturen A method of forming improved EPI fillings on narrow limited by isolating the source / drain regions and structures formed thereby |
| 01/28/2010 | DE112007002213T5 Symetrischer bipolarer Flächentransistorentwurf für Fertigungsprozesse im tiefen Submikrometerbereich Symmetrical bipolar junction transistor design in deep submicron processes for manufacturing |
| 01/28/2010 | DE112006003402B4 Verspannte Silizium-MOS-Vorrichtung mit BOX-Schicht(Burried Oxide-layer)zwischen den Source- und Drain-Gebieten und Herstellungsverfahren dafür Strained silicon MOS device with BOX layer (Buried Oxide Layer) between the source and drain regions and production method thereof |
| 01/28/2010 | DE112004000578B4 Verfahren zur Herstellung eines Gates in einem FinFET-Bauelement und Dünnen eines Stegs in einem Kanalgebiet des FinFET-Bauelements Process for the preparation of a gate in a FinFET device and thinning of a fin in a channel region of the FinFET device |
| 01/28/2010 | DE10323400B4 Verfahren zum Löschen eines nichtflüchtigen Speichers unter Verwendung sowohl des Sourcebereichs als auch des Kanalbereichs einer Speicherzelle A method of erasing a nonvolatile memory using both the source region and the channel region of a memory cell |
| 01/28/2010 | DE10208577B4 Flash-Speicher mit geteilter Gate-Elektrode und Verfahren zu seiner Herstellung Flash memory split-gate electrode and method for its preparation |
| 01/28/2010 | DE102009032274A1 Siliciumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung Silicon carbide semiconductor device and process for their preparation |
| 01/28/2010 | DE102009030281A1 Aktive Abschirmung von Leitern in MEMS-Vorrichtungen Active shielding conductors in MEMS devices |
| 01/28/2010 | DE102009024756A1 Elektronisches Bauelement und Verfahren zu dessen Herstellung An electronic device and method for its production |
| 01/28/2010 | DE102008040480A1 Halbleitermodul Semiconductor module |
| 01/28/2010 | DE102004032917B4 Verfahren zum Herstellen eines Doppel-Gate-Transistors A method of manufacturing a double gate transistor |
| 01/27/2010 | EP2148374A1 A tunnel nanowire transistor |
| 01/27/2010 | EP2148373A2 Method for applying simultaneous tensile and compressive stress to NMOS and PMOS transistor channels respectively |
| 01/27/2010 | EP2148372A1 Device Structures with a Self-Aligned Damage Layer and Methods for Forming such Device Structures |
| 01/27/2010 | EP2148362A1 Direct contact to area efficient body tie process flow |
| 01/27/2010 | EP2147466A1 Composite transparent conductors and methods of forming the same |
| 01/27/2010 | EP2147461A1 Nonvolatile memory cell comprising a nanowire and manufacturing method thereof |
| 01/27/2010 | EP1644981B1 Semiconductor device including band-engineered superlattice and method of manufacturing the same |
| 01/27/2010 | EP1369928B1 Method for manufacturing a thin-film transistor structure |
| 01/27/2010 | EP1313134B1 Semiconductor polysilicon component and method of manufacture thereof |
| 01/27/2010 | CN201392839Y Damping diode |
| 01/27/2010 | CN201392838Y Voltage stabilizing diode |
| 01/27/2010 | CN201392837Y Power metal oxide semiconductor field effect transistor structure |
| 01/27/2010 | CN101636845A Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region |
| 01/27/2010 | CN101636844A Planar extended drain transistor and method of producing the same |
| 01/27/2010 | CN101636843A Single voltage supply pseudqmorphic high electron mobility transistor (phemt) power device and process for manufacturing the same |
| 01/27/2010 | CN101635313A Method of manufacturing silicon carbide semiconductor device |
| 01/27/2010 | CN101635312A Device structures with a self-aligned damage layer and methods for forming such device structures |
| 01/27/2010 | CN101635311A Multi-threshold field MOSFET and multi-threshold field MOSFET unit |
| 01/27/2010 | CN101635310A High voltage multi-threshold MOSFET device |
| 01/27/2010 | CN101635309A All around gate type semiconductor device and method of manufacturing the same |
| 01/27/2010 | CN101635308A High-k gate dielectric material and preparation method thereof |
| 01/27/2010 | CN101635307A High-k gate dielectric SrHfON membrane and preparation method thereof |
| 01/27/2010 | CN101635261A Semiconductor device and method for manufacturing the same |
| 01/27/2010 | CN100585905C Display device |
| 01/27/2010 | CN100585902C 有机半导体材料和有机场效应晶体管 The organic semiconductor material and an organic field effect transistor |
| 01/27/2010 | CN100585879C Thin film diode,dual scan diode array substrate and liquid crystal display panel |
| 01/27/2010 | CN100585878C Vertical memory device and method |
| 01/27/2010 | CN100585877C Semiconductor device |
| 01/27/2010 | CN100585876C Semiconductor device manufacturing method |
| 01/27/2010 | CN100585875C Ldmos晶体管 Ldmos transistor |
| 01/27/2010 | CN100585874C Device using abrupt metal-insulator transition layer and method of fabricating the device |
| 01/27/2010 | CN100585873C Semiconductor device |
| 01/27/2010 | CN100585872C Semiconductor device |
| 01/27/2010 | CN100585871C Insulated gate semiconductor device |
| 01/27/2010 | CN100585867C Semiconductor and its producing method |
| 01/27/2010 | CN100585862C Electric device |
| 01/27/2010 | CN100585861C Nonvolatile semiconductor memory device |
| 01/27/2010 | CN100585857C Semiconductor device and manufacturing method thereof |
| 01/27/2010 | CN100585856C Semiconductor capacitor and manufacturing method |
| 01/27/2010 | CN100585838C Polycrystalline silicon layer, method for fabricating the same and flat panel display |
| 01/27/2010 | CN100585834C Ic and its manufacturing method |
| 01/27/2010 | CN100585831C Semiconductor component, display apparatus, optoelectronic device and method for manufacturing the same |
| 01/27/2010 | CN100585829C Semiconductor device |
| 01/27/2010 | CN100585814C Method of processing plasma |