Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2010
02/09/2010US7659562 Electric field read/write head and method of manufacturing same and data read/write device
02/09/2010US7659561 Methods of fabricating semiconductor devices and structures thereof
02/09/2010US7659559 Semiconductor package having insulated metal substrate and method of fabricating the same
02/09/2010US7659556 Electron injection composition for light emitting element, light emitting element, and light emitting device
02/09/2010US7659555 Light-emitting diode
02/09/2010US7659547 LED array
02/09/2010US7659546 Light emitting device
02/09/2010US7659544 Light emitting device with at least two alternately driven light emitting diodes
02/09/2010US7659543 a pixel electrode having organic layers for hole injection (HIL), holeacceleration, hole transport (HTL), and emission; the hole acceleration layer between the HIL and the HTL has hole mobility higher than that of the HIL; thinner layer without degrading brightness; energy efficiency
02/09/2010US7659542 Silicon plate, producing method thereof, and solar cell
02/09/2010US7659541 Liquid crystal display device having a thin film transistor substrate with a multi-cell gap structure and method of manufacturing same
02/09/2010US7659539 Semiconductor device including a floating gate memory cell with a superlattice channel
02/09/2010US7659538 Layered composite film incorporating a quantum dot shift register
02/09/2010US7659537 Field effect transistor
02/09/2010US7659536 High performance hyperspectral detectors using photon controlling cavities
02/09/2010US7659535 High speed data channel including a CMOS VCSEL driver and a high performance photodetector and CMOS photoreceiver
02/09/2010US7659215 Method of depositing nanolaminate film for non-volatile floating gate memory devices by atomic layer deposition
02/09/2010US7659185 Method for forming silicon thin-film on flexible metal substrate
02/09/2010US7659183 Solid-state imaging device and method for manufacturing the same
02/09/2010US7659167 Method for improving the performance of flash memory by using microcrystalline silicon film as a floating gate
02/09/2010US7659166 Integration approach to form the core floating gate for flash memory using an amorphous carbon hard mask and ArF lithography
02/09/2010US7659165 Method of fabricating a field effect transistor
02/09/2010US7659161 Methods of forming storage nodes for a DRAM array
02/09/2010US7659158 Atomic layer deposition processes for non-volatile memory devices
02/09/2010US7659155 Method of forming a transistor having gate and body in direct self-aligned contact
02/09/2010US7659153 Sectional field effect devices and method of fabrication
02/09/2010US7659149 Method of electrically detecting biomolecule
02/09/2010US7659137 Structure capable of use for generation or detection of electromagnetic radiation, optical semiconductor device, and fabrication method of the structure
02/09/2010US7659130 Thin film transistor array panel for display and manufacturing method thereof
02/09/2010US7659011 Electron injection layer contains an organic metal complex having a central atom of the same metal element as a constituent element of the cathode; calcium acetylacetone as complex for example; enhance the adhesion of the electron-injection layer to the cathode
02/09/2010US7658973 Incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process
02/09/2010CA2241779C Indirect x-ray image detector for radiology
02/04/2010WO2010014974A2 Phase transition devices and smart capacitive devices
02/04/2010WO2010014507A1 Discrete semiconductor device and method of forming sealed trench junction termination
02/04/2010WO2010014355A2 Varactors with enhanced tuning ranges
02/04/2010WO2010014283A1 Lateral devices containing permanent charge
02/04/2010WO2010014281A1 Semiconductor on insulator devices containing permanent charge
02/04/2010WO2010014251A2 Transistor with embedded si/ge material having enhanced boron confinement
02/04/2010WO2010014246A1 Performance enhancement in pmos and nmos transistors on the basis of silicon/carbon material
02/04/2010WO2010014128A2 Normally-off semiconductor devices and methods of fabricating the same
02/04/2010WO2010014064A1 Multi-layer reconfigurable switches
02/04/2010WO2010013984A2 Method and apparatus for manufacturing thin-film transistor
02/04/2010WO2010013636A1 Wiring film, thin film transistor, target, wiring film formation method
02/04/2010WO2010013621A1 Semiconductor device manufacturing method and semiconductor device
02/04/2010WO2010013404A1 Semiconductor device and method for manufacturing the same
02/04/2010WO2010013195A1 Integrated circuit and method for manufacturing an integrated circuit
02/04/2010WO2010013008A1 Active matrix oled display and driver therefor
02/04/2010WO2010012860A1 A lithographic process using a nanowire mask, and nanoscale devices fabricated using the process
02/04/2010US20100029068 Semiconductor device and semiconductor device production system
02/04/2010US20100029051 Semiconductor Device and Fabricating Method Thereof
02/04/2010US20100027355 Planar double gate transistor storage cell
02/04/2010US20100027347 Three-Terminal Single Poly NMOS Non-Volatile Memory Cell
02/04/2010US20100027346 Asymmetric Single Poly NMOS Non-Volatile Memory Cell
02/04/2010US20100027345 Erasable non-volatile memory device using hole trapping in high-k dielectrics
02/04/2010US20100027330 Magnetic memory device and method for reading magnetic memory cell using spin hall effect
02/04/2010US20100027310 Apparatus and methods for optically-coupled memory systems
02/04/2010US20100027172 Integrated electrostatic discharge (esd) device
02/04/2010US20100026779 Semiconductor member, semiconductor article manufacturing method, and led array using the manufacturing method
02/04/2010US20100026611 Display Device
02/04/2010US20100026400 Resonant tunneling structure
02/04/2010US20100026399 Method and Apparatus for Effecting Stable Operation of Resonant Tunneling Diodes
02/04/2010US20100026169 Thin film transistor, method of manufacturing the same and flat panel display device having the same
02/04/2010US20100025850 Ohmic electrode structure and semiconductor element
02/04/2010US20100025827 Semiconductor device and method of fabricating the same
02/04/2010US20100025826 Field Effect Transistors with Channels Oriented to Different Crystal Planes
02/04/2010US20100025825 Metal adhesion by induced surface roughness
02/04/2010US20100025823 Passivation of aluminum nitride substrates
02/04/2010US20100025822 Germanium on insulator (goi) semiconductor substrates
02/04/2010US20100025821 Ion implanting apparatus and ion implanting method
02/04/2010US20100025819 Programmable precision resistor and method of programming the same
02/04/2010US20100025818 Integrated circuit package
02/04/2010US20100025817 Method of manufacturing semiconductor device and semiconductor device
02/04/2010US20100025816 Semiconductor device
02/04/2010US20100025815 Semiconductor device and method of manufacturing the same
02/04/2010US20100025814 Structure for dual contact trench capacitor and structure thereof
02/04/2010US20100025813 Structure for dual contact trench capacitor and structure therof
02/04/2010US20100025810 Method and System for Secure Heat Sink Attachment on Semiconductor Devices with Macroscopic Uneven Surface Features
02/04/2010US20100025809 Integrated Circuit and Method of Forming Sealed Trench Junction Termination
02/04/2010US20100025808 Bipolar Transistor And Method Of Fabricating The Same
02/04/2010US20100025807 Discrete Semiconductor Device and Method of Forming Sealed Trench Junction Termination
02/04/2010US20100025806 Semiconductor device and method of fabricating the same
02/04/2010US20100025786 Method for Manufacturing a Diaphragm on a Semiconductor Substrate and Micromechanical Component Having Such a Diaphragm
02/04/2010US20100025784 Fibrous micro-composite material
02/04/2010US20100025783 Sensor apparatus for detecting variations in a dynamic quantity while suppressing detection deviations that are caused by bending deformation of a sensor chip
02/04/2010US20100025782 Technique for reducing silicide non-uniformities in polysilicon gate electrodes by an intermediate diffusion blocking layer
02/04/2010US20100025781 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors
02/04/2010US20100025780 Semiconductor device and method for manufacturing same
02/04/2010US20100025779 Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process
02/04/2010US20100025778 Transistor structure and method of making the same
02/04/2010US20100025777 Method for suppressing lattice defects in a semiconductor substrate
02/04/2010US20100025775 Replacement spacers for mosfet fringe capacatance reduction and processes of making same
02/04/2010US20100025774 Schottky barrier integrated circuit
02/04/2010US20100025773 Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor
02/04/2010US20100025770 Gate dielectrics of different thickness in pmos and nmos transistors
02/04/2010US20100025768 Semiconductor device and manufacturing method thereof
02/04/2010US20100025767 Semiconductor device
02/04/2010US20100025765 Dual gate ldmos devices
02/04/2010US20100025764 Semiconductor device and manufacturing method thereof
02/04/2010US20100025763 Semiconductor on Insulator Devices Containing Permanent Charge
02/04/2010US20100025762 Semiconductor structure and fabrication method thereof
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