| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
|---|
| 02/04/2010 | US20100025761 Design structure, structure and method of latch-up immunity for high and low voltage integrated circuits |
| 02/04/2010 | US20100025759 Trench type semiconductor device and fabrication method for the same |
| 02/04/2010 | US20100025758 Method of manufacturing high-integrated semiconductor device and semiconductor device manufactured using the same |
| 02/04/2010 | US20100025757 Conductive structure and vertical-type pillar transistor |
| 02/04/2010 | US20100025756 Dual Current Path LDMOSFET with Graded PBL for Ultra High Voltage Smart Power Applications |
| 02/04/2010 | US20100025755 Semiconductor device |
| 02/04/2010 | US20100025754 Semiconductor device and a method of manufacturing the same |
| 02/04/2010 | US20100025753 Semiconductor device |
| 02/04/2010 | US20100025752 Charge trap type non-volatile memory device and method for fabricating the same |
| 02/04/2010 | US20100025751 Semiconductor memory device and method of fabricating the same |
| 02/04/2010 | US20100025748 Semiconductor device with a dynamic gate-drain capacitance |
| 02/04/2010 | US20100025747 Method for initializing ferroelectric memory device, ferroelectric memory device, and electronic equipment |
| 02/04/2010 | US20100025745 Method of forming a low capacitance semiconductor device and structure therefor |
| 02/04/2010 | US20100025744 Semiconductor device and method of manufacturing same |
| 02/04/2010 | US20100025743 Transistor with embedded si/ge material having enhanced boron confinement |
| 02/04/2010 | US20100025742 Transistor having a strained channel region caused by hydrogen-induced lattice deformation |
| 02/04/2010 | US20100025741 Semiconductor memory device and method of fabricating the same |
| 02/04/2010 | US20100025740 Semiconductor Device and Method for Fabricating the Same |
| 02/04/2010 | US20100025739 Semiconductor device with large blocking voltage and method of manufacturing the same |
| 02/04/2010 | US20100025738 Solid-state imaging device with vertical gate electrode and method of manufacturing the same |
| 02/04/2010 | US20100025737 Field-effect transistor |
| 02/04/2010 | US20100025730 Normally-off Semiconductor Devices and Methods of Fabricating the Same |
| 02/04/2010 | US20100025729 Passivated iii-v field effect structure and method |
| 02/04/2010 | US20100025728 Relaxation and transfer of strained layers |
| 02/04/2010 | US20100025726 Lateral Devices Containing Permanent Charge |
| 02/04/2010 | US20100025725 Semiconductor device and method for production thereof |
| 02/04/2010 | US20100025717 Highly efficient gallium nitride based light emitting diodes via surface roughening |
| 02/04/2010 | US20100025696 Process for Producing a Silicon Carbide Substrate for Microelectric Applications |
| 02/04/2010 | US20100025695 Annealing method for semiconductor device with silicon carbide substrate and semiconductor device |
| 02/04/2010 | US20100025694 Apparatus and method for transformation of substrate |
| 02/04/2010 | US20100025693 Wide band gap semiconductor device including junction field effect transistor |
| 02/04/2010 | US20100025691 Semiconductor device and production method thereof |
| 02/04/2010 | US20100025690 Thin film transistor substrate and method of manufacturing the same |
| 02/04/2010 | US20100025688 Semiconductor element and display device using the same |
| 02/04/2010 | US20100025686 Semiconductor device with amorphous silicon monos memory cell structure and method for manufacturing thereof |
| 02/04/2010 | US20100025685 Method and apparatus for forming contact hole |
| 02/04/2010 | US20100025683 Reduction of edge effects from aspect ration trapping |
| 02/04/2010 | US20100025680 Thin-film transistor and method of manufacturing the same |
| 02/04/2010 | US20100025678 Semiconductor device and method for manufacturing the same |
| 02/04/2010 | US20100025677 Semiconductor device and manufacturing method thereof |
| 02/04/2010 | US20100025676 Semiconductor device and manufacturing method thereof |
| 02/04/2010 | US20100025675 Semiconductor device and method for manufacturing the same |
| 02/04/2010 | US20100025674 Oxide semiconductor and thin film transistor including the same |
| 02/04/2010 | US20100025660 Semiconductor devices, methods of manufacture thereof and articles comprising the same |
| 02/04/2010 | US20100025659 Non-volatile electromechanical field effect devices and circuits using same and methods of forming same |
| 02/04/2010 | US20100025658 Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process |
| 02/04/2010 | US20100025652 Multiple Quantum-Well Structure, Radiation-Emitting Semiconductor Base and Radiation-Emitting Component |
| 02/04/2010 | US20100025616 MECHANICAL STRENGTH & THERMOELECTRIC PERFORMANCE IN METAL CHALCOGENIDE MQ (M=Ge,Sn,Pb and Q=S, Se, Te) BASED COMPOSITIONS |
| 02/04/2010 | US20100024862 Substrate Provided with Transparent Conductive Film for Photoelectric Conversion Device, Method for Manufacturing the Substrate, and Photoelectric Conversion Device Using the Substrate |
| 02/04/2010 | DE10335101B4 Verfahren zur Herstellung einer Polysiliziumleitung mit einem Metallsilizidgebiet, das eine Linienbreitenreduzierung ermöglicht A process for preparing a polysilicon line having a metal silicide which enables a reduction in line width |
| 02/04/2010 | DE102008040827A1 Method for manufacturing nano-scale transistor of electronic component in e.g. sensor element, involves applying dielectric layer on substrate after removal of nano-line, and applying conductive material layer to develop transistor |
| 02/04/2010 | DE102008035806A1 Transistor mit eingebettetem Si/GE-Material mit einem verbesserten Boreinschluss Transistor with embedded Si / GE material with improved Boreinschluss |
| 02/04/2010 | DE102008034789B4 Verfahren zum Herstellen einer Halbleitervorrichtung, Verfahren zum Herstellen einer SOI-Vorrichtung, Halbleitervorrichtung und SOI-Vorrichtung A method of manufacturing a semiconductor device, method for producing a SOI device, semiconductor device, and SOI device |
| 02/04/2010 | DE102008033395B3 Verfahren zur Herstellung eines Halbleiterbauelementes und Halbleiterbauelement A process for producing a semiconductor device and semiconductor device |
| 02/04/2010 | DE102008030853A1 Dreidimensionaler Transistor mit einer Doppelkanal-Konfiguration Three-dimensional transistor having a double channel configuration |
| 02/04/2010 | DE102008021568B3 Verfahren zum Reduzieren der Erosion einer Metalldeckschicht während einer Kontaktlochstrukturierung in Halbleiterbauelementen und Halbleiterbauelement mit einem schützenden Material zum Reduzieren der Erosion der Metalldeckschicht A method for reducing erosion of a metal coating layer for a contact hole structure in semiconductor devices and semiconductor device having a protective material to reduce the erosion of the metal coating layer |
| 02/04/2010 | DE102007017002B4 SiC-Halbleiteranordnung und Verfahren zum Herstellen derselben SiC semiconductor device and method of manufacturing the same |
| 02/04/2010 | DE102005053876B4 Drucksensor-Bauteil Pressure sensor component |
| 02/04/2010 | DE102005006153B4 Verfahren zum Herstellen eines Feldeffekttransistors (FETs) A method of manufacturing a field effect transistor (FETs) |
| 02/04/2010 | DE102004021636B4 Halbleitervorrichtung mit selbstausgerichtetem vergrabenem Kontaktpaar und Verfahren zum Ausbilden desselben Of the same semiconductor device having a buried contact pair selbstausgerichtetem and method for forming |
| 02/04/2010 | CA2730162A1 A lithographic process using a nanowire mask, and nanoscale devices fabricated using the process |
| 02/03/2010 | EP2149911A2 Field effect transistor having a channel comprising an oxide semiconductor material including indium and zinc |
| 02/03/2010 | EP2149910A2 Field effect transistor having a channel comprising an oxide semiconductor material including indium and zinc |
| 02/03/2010 | EP2149909A1 Semiconductor device and its manufacturing method |
| 02/03/2010 | EP2149908A1 Replacement metal gate transistors with reduced gate oxide leakage |
| 02/03/2010 | EP2149815A2 Transmission type liquid crystal display device and method for fabricating the same |
| 02/03/2010 | EP2149153A1 Contact and method of fabrication |
| 02/03/2010 | EP2149150A1 Semiconductor device having tipless epitaxial source/drain regions |
| 02/03/2010 | EP2148937A1 Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases |
| 02/03/2010 | EP1356527B1 Bipolar transistor and method for producing the same |
| 02/03/2010 | EP1155458B1 Field effect transistor arrangement with a trench gate electrode and an additional highly doped layer in the body region |
| 02/03/2010 | CN101641795A Organic electroluminescent display device |
| 02/03/2010 | CN101641794A Organic electroluminescent display device and patterning method |
| 02/03/2010 | CN101641793A Organic field effect transistor |
| 02/03/2010 | CN101641792A Semiconductor device and process for producing the same |
| 02/03/2010 | CN101641791A Superjunction power semiconductor device |
| 02/03/2010 | CN101641790A Compound semiconductor laminate, process for producing the compound semiconductor laminate, and semiconductor device |
| 02/03/2010 | CN101640222A Semiconductor device and method of fabricating the same |
| 02/03/2010 | CN101640221A Semiconductor device and method for manufacturing the same |
| 02/03/2010 | CN101640220A Semiconductor device and manufacturing method thereof |
| 02/03/2010 | CN101640219A Semiconductor device and method for manufacturing the same |
| 02/03/2010 | CN101640218A Metallic oxide semiconductor field effect transistor and manufacturing method thereof |
| 02/03/2010 | CN101640217A Structure and method for improving current crowding effect of microwave power transistor emitter region |
| 02/03/2010 | CN100587969C Thin film semiconductor device and method for manufacturing same |
| 02/03/2010 | CN100587968C Semiconductor device and manufacturing method of the same |
| 02/03/2010 | CN100587967C Semiconductor device and methods for fabricating the same |
| 02/03/2010 | CN100587966C Semiconductor device and the method of manufacturing the same |
| 02/03/2010 | CN100587965C Gate dielectric material lanthanum silicate film with high dielectric coefficient as well as preparation method and use thereof |
| 02/03/2010 | CN100587955C Semiconductor apparatus |
| 02/03/2010 | CN100587925C Semiconductor device and manufacureing method thereof |
| 02/03/2010 | CN100587924C ESD protection device and method of making the same |
| 02/03/2010 | CN100587922C Silicon oxide film forming method and semiconductor device manufacturing method |
| 02/03/2010 | CN100587838C Memory with charge storage locations |
| 02/03/2010 | CN100587564C Liquid crystal display |
| 02/03/2010 | CN100587435C Sensor usable in ultra pure and highly corrosive environments |
| 02/02/2010 | US7656491 Liquid crystal display device and method of manufacturing the same |
| 02/02/2010 | US7656465 Liquid crystal display and method of manufacturing the same |
| 02/02/2010 | US7656087 Flat panel display |
| 02/02/2010 | US7656047 Semiconductor device package and manufacturing method |
| 02/02/2010 | US7656045 Cap layer for an aluminum copper bond pad |