Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/17/2009US20090309193 Mesa type semiconductor device and manufacturing method thereof
12/17/2009US20090309192 Integrated circuit system with sub-geometry removal and method of manufacture thereof
12/17/2009US20090309191 Semiconductor device
12/17/2009US20090309190 Semiconductor processing
12/17/2009US20090309189 Method for the growth of indium nitride
12/17/2009US20090309188 Semiconductor device and method of manufacturing same
12/17/2009US20090309187 Semiconductor Device and Method of Fabricating the Same
12/17/2009US20090309185 Inductor module, silicon tuner module and semiconductor device
12/17/2009US20090309181 Trench schottky with multiple epi structure
12/17/2009US20090309173 Mems sensor
12/17/2009US20090309172 Sensor and a method of making a sensor
12/17/2009US20090309171 Mems Sensor Comprising a Deformation-free Back Electrode
12/17/2009US20090309169 Structure for Preventing Leakage of a Semiconductor Device
12/17/2009US20090309168 Self-aligned selective metal contact to source/drain diffusion
12/17/2009US20090309167 Electronic Device and Manufacturing Method Thereof
12/17/2009US20090309162 Semiconductor device having different fin widths
12/17/2009US20090309161 Semiconductor integrated circuit device
12/17/2009US20090309158 Memory Devices
12/17/2009US20090309157 Mos type semiconductor device
12/17/2009US20090309156 Super Self-Aligned Trench MOSFET Devices, Methods, and Systems
12/17/2009US20090309154 Selection transistor
12/17/2009US20090309153 Method of manufacturing semiconductor device and semiconductor device
12/17/2009US20090309152 Integrated Circuits Having a Contact Region and Methods for Manufacturing the Same
12/17/2009US20090309151 Semiconductor Constructions
12/17/2009US20090309150 Semiconductor Device And Method For Making Semiconductor Device
12/17/2009US20090309149 Memory cell arrangements and methods for manufacturing a memory cell arrangement
12/17/2009US20090309148 Semiconductor structure including gate electrode having laterally variable work function
12/17/2009US20090309147 Semiconductor memory device and method of fabricating the same
12/17/2009US20090309146 Semiconductor device
12/17/2009US20090309141 Semiconductor device and manufacturing method of the same
12/17/2009US20090309140 IN-SITU CARBON DOPED e-SiGeCB STACK FOR MOS TRANSISTOR
12/17/2009US20090309139 Asymmetric gate electrode and method of manufacture
12/17/2009US20090309138 Transistor and semiconductor device
12/17/2009US20090309137 Field effect transistor and method of manufacture thereof
12/17/2009US20090309135 Compound semiconductor device
12/17/2009US20090309134 Semiconductor device and method of manufacturing the same
12/17/2009US20090309133 Manufacturing method for semiconductor device and semiconductor device
12/17/2009US20090309132 Integrated latch-up free insulated gate bipolar transistor
12/17/2009US20090309131 Igbt transistor with protection against parasitic component activation and manufacturing process thereof
12/17/2009US20090309130 Method of fabricating collector of igbt
12/17/2009US20090309129 Semiconductor ESD Device and Method of Making Same
12/17/2009US20090309128 Low Leakage Protection Device
12/17/2009US20090309127 Selective area epitaxy growth method and structure
12/17/2009US20090309124 LED Fabrication via Ion Implant Isolation
12/17/2009US20090309117 Protection circuit, and semiconductor device and light emitting device using such protection circuit
12/17/2009US20090309105 Methods for producing improved crystallinity group III-nitride crystals from initial group III-Nitride seed by ammonothermal Growth
12/17/2009US20090309104 SYSTEMS AND METHODS FOR CREATING CRYSTALLOGRAPHIC-ORIENTATION CONTROLLED poly-SILICON FILMS
12/17/2009US20090309103 Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
12/17/2009US20090309102 Array substrate for liquid crystal display device and method of fabricating the same
12/17/2009US20090309100 Semiconductor device, method for manufacturing the semiconductor device, and display device
12/17/2009US20090309096 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
12/17/2009US20090309092 Self-aligned nanotube field effect transistor and method of fabricating same
12/17/2009US20090309091 Semiconductor device and method for manufacturing the same
12/17/2009US20090309090 Nanostructures and a Method for the Manufacture of the Same
12/17/2009US20090309089 Non-Volatile Memory Arrays Comprising Rail Stacks with a Shared Diode Component Portion for Diodes of Electrically Isolated Pillars
12/17/2009DE112007003167T5 Integriertes komplementäres Niederspannungs-HF-LDMOS Integrated complementary low-voltage RF-LDMOS
12/17/2009DE102009002944A1 Halbleitervorrichtung Semiconductor device
12/17/2009DE102008051166A1 Halbleitervorrichtung mit einer Diode A semiconductor device comprising a diode
12/17/2009DE102008050495A1 Halbleitervorrichtung Semiconductor device
12/17/2009DE102008042151A1 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device
12/17/2009DE102004003853B4 Vorrichtung und Verfahren zur Kompensation von Piezo-Einflüssen auf eine integrierte Schaltungsanordnung Apparatus and method for compensating piezo influences on an integrated circuit arrangement
12/17/2009DE102004002723B4 Halbleiterbauelement mit einem SOI-Aufbau A semiconductor device with a SOI structure
12/16/2009EP2133919A1 SOI transistor with ground plane and gate being self-aligned and with a buried oxide of varying thickness
12/16/2009EP2133911A1 Capacitor cell, integrated circuit, integrated circuit designing method, and integrated circuit manufacturing method
12/16/2009EP2133910A1 Passivation method of non-radiative recombination centres of ZnO samples and passivated ZnO samples prepared by the same method.
12/16/2009EP2133909A1 Semiconductor device, and its manufacturing method
12/16/2009EP2132773A1 A power semiconductor arrangement and a semiconductor valve provided therewith
12/16/2009EP0993688B1 Power semiconductor device with semi-insulating subtrate
12/16/2009CN101604706A Integrated circuit memory cells and non-volatile memory cells
12/16/2009CN101604705A Fin grids transistor surrounded with grid electrodes and manufacturing method thereof
12/16/2009CN101604704A HEMT device and manufacturing method thereof
12/16/2009CN101604696A Semiconductor device, and manufacturing method thereof
12/16/2009CN101604694A Multi-transistor element, operation and manufacturing method thereof
12/16/2009CN101604693A Memory devices
12/16/2009CN101604692A Method and apparatus for creating a deep trench capacitor to improve device performance
12/16/2009CN101604691A Semiconductor device and manufacturing method of the same
12/16/2009CN101604690A Semiconductor device having a power cutoff transistor
12/16/2009CN101604664A Metal gate electrode and method for producing the same
12/16/2009CN101604660A Mesa type semiconductor device and manufacturing method thereof
12/16/2009CN101604632A Mesa type semiconductor device and maufacturing method thereof
12/16/2009CN100570899C Semiconductor apparatus and method of manufacturing the same
12/16/2009CN100570898C Non-volatile memory device for multi-digit storage and its making method
12/16/2009CN100570897C Method for improving non-volatile memory data erasing velocity
12/16/2009CN100570896C Thin-film transistor, active array substrate and manufacturing method thereof
12/16/2009CN100570895C Thin film transistor and method of manufacturing the same
12/16/2009CN100570894C Vertical fin-FET MOS devices
12/16/2009CN100570893C Semiconductor element
12/16/2009CN100570892C Semiconductor device and method for manufacturing the same
12/16/2009CN100570891C High breakdown voltage semiconductor device and fabrication method of the same
12/16/2009CN100570890C Lateral semiconductor device using trench structure and method of manufacturing the same
12/16/2009CN100570889C Structures and methods for manufacturing dislocation free stressed channels in bulk silicon and SOI CMOS devices
12/16/2009CN100570888C Semiconductor device
12/16/2009CN100570887C High speed gallium arsenide based channel strain high electron mobility transistor material
12/16/2009CN100570886C A structure and the corresponding manufacturing method for reducing the extended electrode capacity of the transistor
12/16/2009CN100570885C Voltage pinch-off device with high breakdown voltage and method for fabricating same
12/16/2009CN100570884C Semiconductor structure and manufacturing method thereof
12/16/2009CN100570874C Power metal oxide silicon field effect transistor
12/16/2009CN100570839C Structure of MOS component
12/16/2009CN100570836C Polysilicon thin-film transistor and method for producing the same
12/16/2009CN100570835C Metal-insulator-semiconductor device production method
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