Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/31/2009DE112006001520B4 Prozess für die Herstellung erhabener Source- und Drain-Gebiete mit zu entfernenden Abstandshaltern, wobei "Mausohren" vermieden werden Process for forming raised source and drain regions with spacers to be removed, with "mouse ears" are avoided
12/31/2009DE112004002611B4 Amorpher Ätzstopp zum anisotropen Ätzen von Substraten Amorphous etch stop for the anisotropic etching of substrates
12/31/2009DE102005022306B4 Verfahren zum Herstellen einer Halbleitervorrichtung mit einem Fin-Feldeffekttransistor (FinFET) A method of manufacturing a semiconductor device having a fin field effect transistor (FinFET)
12/30/2009WO2009158313A1 Surface-textured encapsulations for use with light emitting diodes
12/30/2009WO2009158117A2 Chemical modulation of electronic and magnetic properties of graphene
12/30/2009WO2009158054A1 Dielectric ledge for high frequency devices
12/30/2009WO2009158053A1 Ferroelectric memory using multiferroics
12/30/2009WO2009158006A2 Methods and apparatus for detecting molecular interactions using fet arrays
12/30/2009WO2009157754A2 Electromagnetic induced field effect transistor (emifet)
12/30/2009WO2009157574A1 Thin film transistor
12/30/2009WO2009157573A1 Thin film transistor, semiconductor device and electronic device
12/30/2009WO2009157535A1 Sputtering target for oxide semiconductor, comprising ingao3(zno) crystal phase and process for producing the sputtering target
12/30/2009WO2009157531A1 Semiconductor device, manufacturing method thereof, and display device using the semiconductor device
12/30/2009WO2009157369A1 Method for manufacturing soi substrate
12/30/2009WO2009157299A1 Semiconductor device and method for manufacturing the same
12/30/2009WO2009157284A1 Organic field effect transistor
12/30/2009WO2009157237A1 Semiconductor device and method for manufacturing the same
12/30/2009WO2009157114A1 Semiconductor device and method for manufacturing same
12/30/2009WO2009157113A1 Semiconductor device and method for manufacturing the same
12/30/2009WO2009157101A1 Magnetic memory element and its driving method and nonvolatile memory device
12/30/2009WO2009157100A1 Spin valve recording element and storage device
12/30/2009WO2009157042A1 Semiconductor device and method for manufacturing the same
12/30/2009WO2009157040A1 Semiconductor device and process for producing the semiconductor device
12/30/2009WO2009156954A1 Interfacial layer regrowth control in high-k gate structure for field effect transistor
12/30/2009WO2009156657A1 Field effect superconductor transistor and method for making such transistor
12/30/2009WO2009136095A3 Method for making complementary p and n mosfet transistors, electronic device including such transistors, and processor including at least one such device
12/30/2009WO2009123936A3 Light emitting diodes with smooth surface for reflective electrode
12/30/2009WO2009089283A3 Low-voltage, n-channel hybrid transistors
12/30/2009WO2009064530A3 Semiconductive materials and associated uses thereof
12/30/2009WO2009042807A3 Adjustable field effect rectifier
12/30/2009WO2008121976A3 Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal
12/30/2009EP2139051A1 Power surface mount light emitting die package
12/30/2009EP2139042A1 High voltage device with constant current source and manufacturing method thereof
12/30/2009EP2139036A1 Semiconductor device
12/30/2009EP2139035A1 Flotox-type eeprom and method for manufacturing the same
12/30/2009EP2139031A1 Semiconductor device and method for manufacturing semiconductor device
12/30/2009EP2138851A1 Micro electro mechanical systems element for measuring three-dimensional vectors
12/30/2009EP2138609A1 Formation of single crystal semiconductor nanowires
12/30/2009EP2138545A1 Novel porphyrazine derivative and intermediate thereof, method for production of novel porphyrazine derivative and intermediate thereof, and use of porphyrazine derivative
12/30/2009EP2137758A1 Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
12/30/2009EP1794803B1 Method of manufacturing a lateral DMOS-Transistor
12/30/2009EP1547136B1 Method for making a wire nanostructure in a semiconductor film
12/30/2009EP1128443B1 Field-effect semiconductor device and fabrication method thereof
12/30/2009CN201374335Y Integrated SOI LDMOS device unit with vertical channel
12/30/2009CN201374329Y Press-package automotive rectifier diode closed by plastic shell
12/30/2009CN101617408A Thin-film transistor fabrication process and display device
12/30/2009CN101617407A Use of quantum system identification and quantum control techniques for medical diagnostic and therapeutic purposes
12/30/2009CN101615634A Single crystal germanium manganese magnetic semiconductor/germanium magnetic heterodiode and preparation method thereof
12/30/2009CN101615633A Series-shunt switch with thermal terminal
12/30/2009CN101615632A Structure and method for forming a shielded gate trench FET with an inter-electrode dielectric having a nitride layer therein
12/30/2009CN101615631A Semiconductor device reducing output capacitance due to parasitic capacitance
12/30/2009CN101615619A Semiconductor device
12/30/2009CN101615593A Semiconductor device, method of manufacturing the same, peeling method, and transfer method
12/30/2009CN101615592A Semiconductor device, method of manufacturing the same, peeling method, and transfer method
12/30/2009CN101613074A Micro electro mechanical systems element for measuring three-dimensional vectors
12/30/2009CN100576570C Semiconductor device and method for manufacturing same
12/30/2009CN100576569C Schottky device and method of forming
12/30/2009CN100576568C Split gate memory unit and method for manufacturing split gate memory unit array
12/30/2009CN100576567C Thin-film transistor substrate, electronic device and preparation method thereof
12/30/2009CN100576566C Semiconductor device and manufacturing method thereof, and contact etching stop layer
12/30/2009CN100576565C Insulated gate semiconductor device and manufacturing method thereof
12/30/2009CN100576564C Tapered unit cell metal-oxide-semiconductor high-voltage device structure
12/30/2009CN100576563C Superjunction semiconductor device structure and method
12/30/2009CN100576562C Silicon-on-insulator device
12/30/2009CN100576558C Light emitting device
12/30/2009CN100576549C Flat panel display device
12/30/2009CN100576546C Semiconductor device having a modified recess channel gate and a method for fabricating the same
12/30/2009CN100576545C Semiconductor device
12/30/2009CN100576542C Insulated-gate semiconductor device
12/30/2009CN100576540C Semiconductor device with a wave-shaped trench or gate and method for manufacturing the same
12/30/2009CN100576473C A method for manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
12/30/2009CN100576472C Semiconductor device having amorphous silicon MONOS storage unit structure and method thereof
12/30/2009CN100576469C Methods for forming semiconductor wires and resulting devices
12/30/2009CN100576468C Method of manufacturing semiconductor device
12/30/2009CN100576441C Integrated semiconductor product comprising a metal-insulator-metal capacitor
12/30/2009CN100576350C Nand flash memory device
12/30/2009CN100576042C Liquid crystal display device and producing method thereof
12/30/2009CN100576041C Film transistor array substrate and producing method thereof
12/30/2009CN100576027C Flexible liquid crystal display and manufacturing method thereof
12/29/2009US7639061 Semiconductor device and capacitance regulation circuit
12/29/2009US7638886 Semiconductor device and semiconductor chip
12/29/2009US7638884 Thin semiconductor device package
12/29/2009US7638883 Flip chip mounting method and bump forming method
12/29/2009US7638882 Flip-chip package and method of forming thereof
12/29/2009US7638881 Chip package
12/29/2009US7638879 Semiconductor package and fabrication method thereof
12/29/2009US7638878 Devices and systems including the bit lines and bit line contacts
12/29/2009US7638867 Microelectronic package having solder-filled through-vias
12/29/2009US7638857 Structure of silicon controlled rectifier
12/29/2009US7638856 Optoelectronic transmitter integrated circuit and method of fabricating the same using selective growth process
12/29/2009US7638855 Anti-fuse one-time-programmable nonvolatile memory
12/29/2009US7638850 Non-volatile memory structure and method of fabrication
12/29/2009US7638849 Semiconductor device having separated drain regions
12/29/2009US7638848 Semiconductor apparatus with improved ESD withstanding voltage
12/29/2009US7638847 ESD protection structure
12/29/2009US7638846 Semiconductor device and manufacturing method thereof
12/29/2009US7638845 Semiconductor device with buried conductive layer
12/29/2009US7638843 Integrating high performance and low power multi-gate devices
12/29/2009US7638841 Power semiconductor devices and methods of manufacture
12/29/2009US7638840 Semiconductor storage device and semiconductor integrated circuit
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