Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/24/2009US20090315093 Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
12/24/2009US20090315091 Gate structure, and semiconductor device having a gate structure
12/24/2009US20090315090 Isolation Trenches with Conductive Plates
12/24/2009US20090315089 Atomic layer deposited barium strontium titanium oxide films
12/24/2009US20090315088 Ferroelectric memory using multiferroics
12/24/2009US20090315085 Semiconductor device
12/24/2009US20090315084 Semiconductor device and semiconductor substrate
12/24/2009US20090315083 Structure and Method for Forming a Thick Bottom Dielectric (TBD) for Trench-Gate Devices
12/24/2009US20090315082 Lateral junction field effect transistor and method of manufacturing the same
12/24/2009US20090315081 Programmable circuit with carbon nanotube
12/24/2009US20090315080 Transistor array with shared body contact and method of manufacturing
12/24/2009US20090315078 INSULATING GATE AlGaN/GaN HEMT
12/24/2009US20090315077 Multi-layer structure with a transparent gate
12/24/2009US20090315076 Transistor gate electrode having conductor material layer
12/24/2009US20090315075 Semiconductor device
12/24/2009US20090315074 Process for Fabricating Silicon-on-Nothing MOSFETs
12/24/2009US20090315072 Semiconductor Device, Semiconductor Integrated Circuit Equipment Using the Same for Driving Plasma Display, and Plasma Display Unit
12/24/2009US20090315071 Semiconductor device and manufacturing method thereof
12/24/2009US20090315070 Semiconductor device
12/24/2009US20090315044 Electro-optic displays, and components for use therein
12/24/2009US20090315040 Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
12/24/2009US20090315039 Trench MOS type silicon carbide semiconductor device
12/24/2009US20090315038 Compound semiconductor element resistible to high voltage
12/24/2009US20090315037 Compound semiconductor device and its manufacture method
12/24/2009US20090315036 Semiconductor devices including schottky diodes having doped regions arranged as islands and methods of fabricating same
12/24/2009US20090315034 Thin Film Transistor (TFT), method of fabricating the TFT, and Organic Light Emitting Diode (OLED) display including the TFT
12/24/2009US20090315032 Display device
12/24/2009US20090315026 Thin film transistor, method of manufacturing the same, and flat panel display device haviing the same
12/24/2009US20090315024 Organic luminescence device
12/24/2009US20090315020 Diodes, and Methods of Forming Diodes
12/24/2009US20090315019 Optical device having a quantum-dot structure
12/24/2009US20090315018 Methods of forming buffer layer architecture on silicon and structures formed thereby
12/24/2009US20090315017 Electronic devices
12/24/2009US20090315016 Atomic layer deposition for functionalizing colloidal and semiconductor particles
12/24/2009US20090315011 Nanotube device structure and methods of fabrication
12/24/2009US20090314349 Microcrystalline Silicon Film Forming Method and Solar Cell
12/24/2009US20090314060 Circuit assembly for operating a gas sensor array
12/24/2009DE112008000410T5 Epitaxialer Galliumnitridkristall, Verfahren zu dessen Herstellung und Feldeffekttransistor An epitaxial gallium nitride crystal, to methods for its manufacture and field effect transistor
12/24/2009DE112008000409T5 Epitaxiales Substrat für einen Feldeffekttransistor Epitaxial substrate for a field effect transistor
12/24/2009DE102009002046A1 Verfahren zum Bilden eines flachen Basisbereiches eines Bipolartransistors A method for forming a flat base region of a bipolar transistor
12/24/2009DE102008028452A1 Leistungstransistor für hohe Spannungen in SOI-Technologie Power transistor for high voltages in SOI technology
12/24/2009DE10065013B4 Verfahren zum Herstellen eines mikromechanischen Bauelements A method for producing a micromechanical component
12/23/2009WO2009155157A2 Methods of forming buffer layer architecture on silicon and structures formed thereby
12/23/2009WO2009155043A1 Ternary metal transition metal non-oxide nano-particles, methods and applications thereof
12/23/2009WO2009154935A2 Diodes, and methods of forming diodes
12/23/2009WO2009154886A2 Diodes, and methods of forming diodes
12/23/2009WO2009154882A2 Semiconductor power switches having trench gates
12/23/2009WO2009154391A2 Method for manufacturing a power semiconductor device
12/23/2009WO2009154242A1 Method for manufacturing mis-type field effect transistor
12/23/2009WO2009154163A1 Organic thin-film transistor
12/23/2009WO2009154156A1 Patterning method, device manufacturing method using the patterning method, and device
12/23/2009WO2009154145A1 Functionalized molecular element, manufacturing method thereof, and functionalized molecular device
12/23/2009WO2009154015A1 Method for inspecting semiconductor device
12/23/2009WO2009153909A1 Method for manufacturing a semiconductor device, and a semiconductor device
12/23/2009WO2009153712A1 Finfet method and device
12/23/2009WO2008110419A9 Mos-fet having a channel connection, and method for the production of a mos-fet having a channel connection
12/23/2009EP2136445A1 An optical device having a quantum-dot structure
12/23/2009EP2136406A1 Thin film transistor, method of manufacturing the same, and flat panel display device having the same
12/23/2009EP2136405A1 Method and structure for SOI body contact FET with reduced parasitic capacitance
12/23/2009EP2136404A1 Transistor gate electrode having conductor material layer
12/23/2009EP2136398A1 Semiconductor memory device and method for manufacturing the same
12/23/2009EP2136397A1 Flotox type eeprom
12/23/2009EP2136244A1 Display device having an organic semiconductor and manufacturing method therefor using a partition wall
12/23/2009EP2135289A1 Organic electroluminescent display device
12/23/2009EP2135288A1 Organic electroluminescent display device and patterning method
12/23/2009EP2135287A1 Organic electroluminescence display device
12/23/2009EP2135286A1 Semiconductor component and method for producing the same
12/23/2009EP2135285A1 High voltage gan-based heterojunction transistor structure and method of forming same
12/23/2009EP2135280A2 Chips having rear contacts connected by through vias to front contacts
12/23/2009EP1074048B1 Polymer devices
12/23/2009CN101611499A Display device
12/23/2009CN101611496A Doped nanoparticle-based semiconductor junction
12/23/2009CN101611495A Semiconductor device and method for providing a reduced surface area electrode
12/23/2009CN101611494A Chip scale power converter package having an inductor substrate
12/23/2009CN101611489A Semiconductor device
12/23/2009CN101611479A Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor
12/23/2009CN101611474A Amorphous insulator film and thin-film transistor
12/23/2009CN101611471A Epitaxial substrate for field effect transistor
12/23/2009CN101611345A Display device and method for manufacturing the same
12/23/2009CN101609961A Nitride semiconductor device and method of manufacturing same
12/23/2009CN101609844A Non-volatile memory unit and manufacture method thereof
12/23/2009CN101609843A Thin film transistor, method of manufacturing the same, and flat panel display device having the same
12/23/2009CN101609842A 半导体装置 Semiconductor device
12/23/2009CN101609841A Metal oxide semiconductor (MOS) transistor structure and manufacturing method thereof
12/23/2009CN101609837A Solid-state imaging device, drive method thereof and electronic apparatus
12/23/2009CN101609834A Semiconductor device having OTP cells and method for fabricating the same
12/23/2009CN101609832A Display device and manufacturing method thereof, and semiconductor device and manufacturing method thereof
12/23/2009CN101609812A Method for forming electrostatic discharging element
12/23/2009CN101609801A Groove-type Schottky diode and manufacture method thereof
12/23/2009CN100573919C Field-effect transistor
12/23/2009CN100573918C Nonvolatile memory device and method of forming the same
12/23/2009CN100573917C Semiconductor memery device
12/23/2009CN100573916C Thin film transistor, method of manufacturing the thin film transistor, and display substrate having the thin film transistor
12/23/2009CN100573915C Film transistor and its making method
12/23/2009CN100573914C Thin-film transistor element
12/23/2009CN100573913C Semiconductor device
12/23/2009CN100573912C Transistor and method of manufacturing the same
12/23/2009CN100573911C Semiconductor device and its manufacturing method
12/23/2009CN100573910C Semiconductor device and its manufacturing method
12/23/2009CN100573909C Semiconductor device and manufacturing method thereof