Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2009
12/31/2009US20090323168 Electromechanical devices and methods of fabricating same
12/31/2009US20090322827 Decreased actuation voltage in mems devices by constraining membrane displacement without using conductive "landing pad"
12/31/2009US20090322716 Semiconductor Device
12/31/2009US20090322698 Semiconductor device and method of fabricating the same
12/31/2009US20090322447 BEOL Wiring Structures That Include an On-Chip Inductor and an On-Chip Capacitor, and Design Structures for a Radiofrequency Integrated Circuit
12/31/2009US20090321944 Semiconductor device with improved interconnection of conductor plug
12/31/2009US20090321943 Seed layer for reduced resistance tungsten film
12/31/2009US20090321939 Through Silicon via Bridge Interconnect
12/31/2009US20090321895 Silicon thin-film and method of forming silicon thin-film
12/31/2009US20090321894 Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer
12/31/2009US20090321893 Multi-die integrated circuit device and method
12/31/2009US20090321886 Epitaxial lift off stack having a unidirectionally shrunk handle and methods thereof
12/31/2009US20090321885 Epitaxial lift off stack having a universally shrunk handle and methods thereof
12/31/2009US20090321884 Method of fabricating an epitaxially grown layer
12/31/2009US20090321883 Silicon substrate for solid-state imaging device and method for manufacturing the same
12/31/2009US20090321882 Epitazial growth of crystalline material
12/31/2009US20090321881 Epitaxial lift off stack having a pre-curved handle and methods thereof
12/31/2009US20090321880 Semiconductor device
12/31/2009US20090321879 Silicided base structure for high frequency transistors
12/31/2009US20090321878 Non-volatile memory device and method of fabricating the same
12/31/2009US20090321877 Semiconductor device and method of manufacturing the same
12/31/2009US20090321876 System with radio frequency integrated circuits
12/31/2009US20090321875 Semiconductor device and fabrication method thereof
12/31/2009US20090321860 Integrated circuit having a magnetic tunnel junction device and method
12/31/2009US20090321859 System and Method to Fabricate Magnetic Random Access Memory
12/31/2009US20090321858 Semiconductor device and method of manufacturing and inspection thereof
12/31/2009US20090321857 Systems and methods for reduced stress anchors
12/31/2009US20090321856 Self-aligned insulating etchstop layer on a metal contact
12/31/2009US20090321855 Boundaries with elevated deuterium levels
12/31/2009US20090321854 Mis field effect transistor and method for manufacturing the same
12/31/2009US20090321853 HIGH-k/METAL GATE MOSFET WITH REDUCED PARASITIC CAPACITANCE
12/31/2009US20090321852 Semiconductor device and method of manufacturing the same
12/31/2009US20090321851 Semiconductor device and method of fabricating the same
12/31/2009US20090321848 Semiconductor device and method of manufacturing the same
12/31/2009US20090321838 Cmos device and method of manufacturing same
12/31/2009US20090321837 Contact trenches for enhancing stress transfer in closely spaced transistors
12/31/2009US20090321836 Double gate and tri-gate transistor formed on a bulk substrate and method for forming the transistor
12/31/2009US20090321835 Three-dimensional transistor with double channel configuration
12/31/2009US20090321833 VERTICAL PROFILE FinFET GATE FORMED VIA PLATING UPON A THIN GATE DIELECTRIC
12/31/2009US20090321831 Partially depleted soi field effect transistor having a metallized source side halo region
12/31/2009US20090321830 Integrated circuit device, system, and method of fabrication
12/31/2009US20090321829 Low-cost double-structure substrates and methods for their manufacture
12/31/2009US20090321828 Structures, fabrication methods, design structures for strained fin field effect transistors (finfets)
12/31/2009US20090321827 Semiconductor device reducing output capacitance due to parasitic capacitance
12/31/2009US20090321826 Method for manufacturing a high integration density power mos device
12/31/2009US20090321824 Semiconductor device
12/31/2009US20090321823 Semiconductor Device and Manufacturing Method Thereof
12/31/2009US20090321822 High-voltage transistor with improved high stride performance
12/31/2009US20090321821 Semiconductor device having recess gate and method of fabricating the same
12/31/2009US20090321820 Semiconductor device and method for production of semiconductor device
12/31/2009US20090321819 Semiconductor device having super junction
12/31/2009US20090321818 Semiconductor component with two-stage body zone
12/31/2009US20090321817 Structure and Method for Forming a Shielded Gate Trench FET with an Inter-Electrode Dielectric Having a Nitride Layer Therein
12/31/2009US20090321816 Vertical-type non-volatile memory device
12/31/2009US20090321815 Non-volatile memory device and method of fabricating the same
12/31/2009US20090321814 Semiconductor memory device and manufacturing method of the same
12/31/2009US20090321813 Nonvolatile semiconductor memory device and method for manufacturing same
12/31/2009US20090321812 Semiconductor device and method for manufacturing thereof
12/31/2009US20090321811 Memory cell transistors having bandgap-engineered tunneling insulator layers, non-volatile memory devices including such transistors, and methods of formation thereof
12/31/2009US20090321810 Non-volatile memory device, memory card and system
12/31/2009US20090321809 Graded oxy-nitride tunnel barrier
12/31/2009US20090321808 Structures, fabrication methods, and design structures for multiple bit flash memory cells
12/31/2009US20090321807 Semiconductor device and semiconductor system
12/31/2009US20090321806 Nonvolatile memory with floating gates with upward protrusions
12/31/2009US20090321805 Insulator material over buried conductive line
12/31/2009US20090321803 Semiconductor device and method of manufacturing the same
12/31/2009US20090321802 Pumping mos capacitor
12/31/2009US20090321800 Semiconductor device including solid state image pickup device, and portable electronic apparatus
12/31/2009US20090321797 Method of manufacturing semiconductor device
12/31/2009US20090321796 Semiconductor device and method of fabricating the same
12/31/2009US20090321795 Selective formation of dielectric etch stop layers
12/31/2009US20090321794 Cmos devices incorporating hybrid orientation technology (hot) with embedded connectors
12/31/2009US20090321793 Device sensitive to a movement comprising at least one transistor
12/31/2009US20090321792 Separative extended gate field effect transistor based uric acid sensing device, system and method for forming thereof
12/31/2009US20090321788 Dielectric ledge for high frequency devices
12/31/2009US20090321787 High voltage GaN-based heterojunction transistor structure and method of forming same
12/31/2009US20090321783 Semiconductor Device
12/31/2009US20090321747 Multilayered semiconductor wafer and process for manufacturing the same
12/31/2009US20090321746 Silicon carbide semiconductor device and method for producing the same
12/31/2009US20090321744 Buffer layer for promoting electron mobility and thin film transistor having the same
12/31/2009US20090321743 Thin film transistor, semiconductor device and electronic device
12/31/2009US20090321742 Thin film transistor
12/31/2009US20090321741 Storage capacitor in oled pixels and driving circuits and method for forming the same
12/31/2009US20090321740 Tft-lcd array substrate and manufacturing method thereof
12/31/2009US20090321737 Thin film transistor
12/31/2009US20090321733 Metal heterocyclic compounds for deposition of thin films
12/31/2009US20090321732 Thin film transistor, method of manufacturing the same and flat panel display device having the same
12/31/2009US20090321731 Thin film transistor, method of manufacturing the same and flat panel display device having the same
12/31/2009US20090321730 Compositions of doped, co-doped and tri-doped semiconductor materials
12/31/2009US20090321725 Organic el device and manufacturing method thereof
12/31/2009US20090321719 Novel material and process for integrated ion chip
12/31/2009US20090321718 Thin film transistor
12/31/2009US20090321717 Compositionally-graded quantum-well channels for semiconductor devices
12/31/2009US20090321716 Semiconductor Nanowire Transistor
12/31/2009US20090321715 Hetero-crystalline structure and method of making same
12/31/2009US20090321714 Semiconductor light-emitting device
12/31/2009US20090321712 Plasmonic coupling devices
12/31/2009US20090321633 Nanopillar arrays for electron emission
12/31/2009US20090320597 Micro electro mechanical systems element for measuring three-dimensional vectors
12/31/2009DE19843716B4 Halbleitersensor und Verfahren zu dessen Herstellung A semiconductor sensor and method for its production
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