Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2010
01/06/2010CN101620374A Exposure mask using gray-tone pattern, manufacturing method of tft substrate using the same and liquid crystal display device having the tft substrate
01/06/2010CN100578815C Structure and method for manufacturing microelectronic device by utilizing quantum wires
01/06/2010CN100578814C Thin-film transistor and thin-film transistor array base plate
01/06/2010CN100578813C High voltage semiconductor device and method of manufacturing the same
01/06/2010CN100578812C Semiconductor device and method for manufacturing the same
01/06/2010CN100578811C Lateral double diffusion metal oxide semiconductor transistor and method of fabricating thereof
01/06/2010CN100578810C Lowered source electrode/drain electrode transistors and method for producing the same
01/06/2010CN100578809C Solderable top metal for SiC device
01/06/2010CN100578808C Thin film semiconductor device, and its making process and liquid crystal display
01/06/2010CN100578795C Semiconductor device and a manufacturing method for the same
01/06/2010CN100578793C Scalable self-aligned dual floating gate memory cell array and methods of forming the array
01/06/2010CN100578789C Insulated-gate semiconductor device
01/06/2010CN100578777C Semiconductor protective component, semiconductor device and producing method thereof
01/06/2010CN100578762C Circuit device and mixing integrated circuit device
01/06/2010CN100578744C Organic semiconductor film forming method, organic semiconductor film and organic thin film transistor
01/06/2010CN100578590C Semiconductor device, display device having the same, and electronic apparatus
01/06/2010CN100578573C 显示器件及其制造方法 A display device and manufacturing method thereof
01/06/2010CN100578329C Liquid crystal display device, pixel structure and driving method thereof
01/05/2010USRE41068 Spacer-type thin-film polysilicon transistor for low-power memory devices
01/05/2010US7643268 High capacitance density vertical natural capacitors
01/05/2010US7642659 Wire pad of semiconductor device
01/05/2010US7642657 Stacked MEMS device
01/05/2010US7642656 Semiconductor package and method for manufacturing thereof
01/05/2010US7642654 Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor to be used for reliability evaluation
01/05/2010US7642653 Semiconductor device, wiring of semiconductor device, and method of forming wiring
01/05/2010US7642652 Semiconductor integrated circuit device and a method of manufacturing the same
01/05/2010US7642651 Multi-layer interconnect with isolation layer
01/05/2010US7642648 Semiconductor device having a reductant layer and manufacturing method thereof
01/05/2010US7642638 Inverted lead frame in substrate
01/05/2010US7642626 Semiconductor devices including mesa structures and multiple passivation layers
01/05/2010US7642625 Method of evaluating thermal stress resistance of semiconductor device, and semiconductor wafer having test element
01/05/2010US7642623 Fabrication method for polycrystalline silicon thin film and apparatus using the same
01/05/2010US7642622 Phase changeable memory cells and methods of forming the same
01/05/2010US7642621 Semicondutor device and protection circuit
01/05/2010US7642619 Air gap in integrated circuit inductor fabrication
01/05/2010US7642615 Semiconductor device with a noise prevention structure
01/05/2010US7642614 Solid-state imaging device and method for manufacturing the same
01/05/2010US7642612 Semiconductor device and manufacturing method thereof
01/05/2010US7642611 Sensor device, sensor system and methods for manufacturing them
01/05/2010US7642610 Transistor gate electrode having conductor material layer
01/05/2010US7642609 Metal-oxide-semiconductor device with a doped titanate body
01/05/2010US7642608 Dual isolation for image sensors
01/05/2010US7642607 MOS devices with reduced recess on substrate surface
01/05/2010US7642606 Semiconductor device having non-volatile memory and method of fabricating the same
01/05/2010US7642605 Semiconductor device
01/05/2010US7642603 Semiconductor device with reduced fringe capacitance
01/05/2010US7642601 Method of designing semiconductor integrated circuit device and semiconductor integrated circuit device
01/05/2010US7642599 Semiconductor device and junction termination structure
01/05/2010US7642598 Method of fabricating a semiconductor device
01/05/2010US7642596 Insulated gate field effect transistor
01/05/2010US7642595 Nonvolatile semiconductor memory and method of fabrication thereof
01/05/2010US7642594 Electronic device including gate lines, bit lines, or a combination thereof
01/05/2010US7642592 Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating same
01/05/2010US7642589 Fin field effect transistors having capping insulation layers
01/05/2010US7642585 Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
01/05/2010US7642584 Semiconductor device and method for forming the same
01/05/2010US7642583 Ferroelectric memory device
01/05/2010US7642578 Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same
01/05/2010US7642577 Semiconductor device and method for fabricating the same
01/05/2010US7642575 Integrated electronic microphone having a perforated rigid back plate membrane
01/05/2010US7642573 Semiconductor device
01/05/2010US7642570 Rescue structure and method for laser welding
01/05/2010US7642569 Transistor structure with minimized parasitics and method of fabricating the same
01/05/2010US7642567 Field-effect transistor and method of manufacturing the same
01/05/2010US7642566 Scalable process and structure of JFET for small and decreasing line widths
01/05/2010US7642561 Semiconductor light emitting diode having efficiency and method of manufacturing the same
01/05/2010US7642559 Electro-optical device and electronic device
01/05/2010US7642555 Semiconductor device
01/05/2010US7642554 Array substrate for liquid crystal display device
01/05/2010US7642553 Thin film transistor array panel
01/05/2010US7642552 Liquid crystal display device and manufacturing method therefor
01/05/2010US7642550 Multi-layer structures for parameter measurement
01/05/2010US7642549 Phase change memory cells delineated by regions of modified film resistivity
01/05/2010US7642547 Light emitting device and method of manufacturing the same
01/05/2010US7642544 Production method for semiconductor component with stress-carrying semiconductor layer
01/05/2010US7642542 Semiconductor light-emitting device and producing method for the same
01/05/2010US7642539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method
01/05/2010US7642538 Switching element, line-switching device and logic circuit
01/05/2010US7642183 High power, high luminous flux light emitting diode and method of making same
01/05/2010US7642164 Method of forming self aligned contacts for a power MOSFET
01/05/2010US7642158 Semiconductor memory device and method of production
01/05/2010US7642155 Semiconductor device with metal nitride barrier layer between gate dielectric and silicided, metallic gate electrodes
01/05/2010US7642141 Manufacturing method for display device
01/05/2010US7642140 CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same
01/05/2010US7642139 Semiconductor device production method and semiconductor device
01/05/2010US7642138 Split-channel antifuse array architecture
01/05/2010US7642098 Ferromagnetic or ferrimagnetic layer, method for the production thereof, and use thereof
01/05/2010US7642038 irradiating TiO2 photocatalyst and a silicone coupler having fluorocarbon chain with light through the light-transmitting substrate to modify a part of a surface of the material containing the fluorocarbon chain which is to be a 2nd region; patterning a conductive material to form pattern to 2nd region
01/05/2010US7641988 Comprises an epitaxial nitride layer with a light-emitting device structure formed on the above self-supported nitride semiconductor substrate; having large light emission with a low driving voltage; gallium nitride
12/2009
12/31/2009US20090325452 Cathode substrate having cathode electrode layer, insulator layer, and gate electrode layer formed thereon
12/31/2009US20090325358 Method of reducing dislocation-induced leakage in a strained-layer field-effect transistor
12/31/2009US20090325352 Methods of forming drain extended transistors
12/31/2009US20090325333 Display device and method for manufacturing the same
12/31/2009US20090324475 Superhard dielectric compounds and methods of preparation
12/31/2009US20090323426 Semiconductor memory device
12/31/2009US20090323424 Semiconductor memory device and method for driving semiconductor memory device
12/31/2009US20090323416 Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells
12/31/2009US20090323387 One-Time Programmable Memory and Operating Method Thereof
12/31/2009US20090323238 Electronic device including a protection circuit for a light-emitting device
12/31/2009US20090323170 Groove on cover plate or substrate