Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2010
02/11/2010US20100032738 Magnetic memory with strain-assisted exchange coupling switch
02/11/2010US20100032737 Nano-magnetic memory device and method of manufacturing the device
02/11/2010US20100032733 Semiconductor device and manufacturing method thereof
02/11/2010US20100032732 Electrical antifuse having a multi-thickness dielectric layer
02/11/2010US20100032731 Schottky junction-field-effect-transistor (jfet) structures and methods of forming jfet structures
02/11/2010US20100032730 Semiconductor device and method of making the same
02/11/2010US20100032728 Area efficient 3d integration of low noise jfet and mos in linear bipolar cmos process
02/11/2010US20100032725 Semiconductor memory device and method of manufacturing the same
02/11/2010US20100032719 Probes for scanning probe microscopy
02/11/2010US20100032718 III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer
02/11/2010US20100032717 Devices based on si/nitride structures
02/11/2010US20100032716 Semiconductor device
02/11/2010US20100032715 Mos transistor and method for fabricating the same
02/11/2010US20100032713 Lateral insulated gate bipolar transistor
02/11/2010US20100032712 Power semiconductor device and a method of forming a power semiconductor device
02/11/2010US20100032711 Semiconductor device and method of manufacturing the same
02/11/2010US20100032710 Deep Diffused Thin Photodiodes
02/11/2010US20100032686 Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage
02/11/2010US20100032685 Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures
02/11/2010US20100032684 ION IMPLANTATION FOR SUPPRESSION OF DEFECTS IN ANNEALED SiGe LAYERS
02/11/2010US20100032683 GaN-BASED SEMICONDUCTOR ELEMENT
02/11/2010US20100032682 Large area thin freestanding nitride layers and their use as circuit layers
02/11/2010US20100032676 Semiconductor integrated circuit device and a manufacturing method for the same
02/11/2010US20100032671 Degradation correction for finfet circuits
02/11/2010US20100032668 Semiconductor device and method for manufacturing the same
02/11/2010US20100032667 Semiconductor device and method for manufacturing the same
02/11/2010US20100032666 Semiconductor device and manufacturing method thereof
02/11/2010US20100032665 Semiconductor device and method for manufacturing the same
02/11/2010US20100032664 Thin film transistor substrate and a fabricating method thereof
02/11/2010US20100032653 Carbon Nanotube Electric Field Effect Transistor and Process for Producing the Same
02/11/2010US20100032635 Array of low resistive vertical diodes and method of production
02/11/2010US20100032586 Uniform Large-Grained And Grain Boundary Location Manipulated Polycrystalline Thin Film Semiconductors Formed Using Sequential Lateral Solidification And Devices Formed Thereon
02/11/2010US20100032268 Stacked MEMS Device
02/11/2010US20100032008 Zinc oxide multi-junction photovoltaic cells and optoelectronic devices
02/11/2010DE19824514B4 Diode Diode
02/11/2010DE19734985B4 Transistorbauelement Transistor device
02/11/2010DE112008000571T5 Bilden eines nicht-planaren Transistors mit einem Quantentopfkanal Forming a non-planar transistor having a quantum well channel
02/11/2010DE10394190B4 Feldeffekt-Transistor Field-effect transistor
02/11/2010DE10339939B4 Intergierte Schaltungsanordnung und Verfahren zur Herstellung und Beurteilung derselben Inter-alloy circuitry and method for producing the same and assessment
02/11/2010DE10250832B4 MOS-Transistor auf SOI-Substrat mit Source-Durchkontaktierung und Verfahren zur Herstellung eines solchen Transistors MOS transistor on an SOI substrate with source via and method for producing such a transistor
02/11/2010DE102009035029A1 Halbleiterbauelement mit einer dynamischen Gate-Drain-Kapazität A semiconductor device having a dynamic gate-drain capacitance
02/11/2010DE102009034953A1 Halbleitervorrichtung und Verfahren zu deren Fertigung A semiconductor device and method of manufacturing
02/11/2010DE102009030086A1 Feldeffekteinrichtung und Verfahren zum Herstellen derselben Field effect device and method of manufacturing the same
02/11/2010DE102009019684A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
02/11/2010DE102009014056A1 Halbleitervorrichtung Semiconductor device
02/11/2010DE102008049664B3 Method for producing semiconductor body of diode, involves forming n-conductive zone by implantation of protons in direction in semiconductor body in depth and by heating body for forming hydrogen-reduced donors
02/11/2010CA2725576A1 Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
02/10/2010EP2151853A1 Compound-type thin film, method for compound-type thin film formation, and electronic apparatus using the thin film
02/10/2010EP2150982A1 Amorphous oxide semiconductor, semiconductor device, and thin film transistor
02/10/2010EP2150981A1 Mos transistor with a p-field implant overlying each end of a gate thereof
02/10/2010CN101647122A Electronic device including channel regions lying at different elevations and processes of forming the same
02/10/2010CN101647121A Circuit substrate, and display device
02/10/2010CN101645464A TbMnO p-n heterojunction having two-way rectifying characteristic and preparation method thereof
02/10/2010CN101645463A Semiconductor device and method for manufacturing the same
02/10/2010CN101645462A Semiconductor device and method for manufacturing the same
02/10/2010CN101645461A Semiconductor device
02/10/2010CN101645460A Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate
02/10/2010CN101645459A Semiconductor device and method of manufacturing the same
02/10/2010CN101645458A Semiconductor device and method of manufacturing the same
02/10/2010CN101645457A Super-self-aligned trench-dmos structure and method
02/10/2010CN101645456A Electronic device, thin-film transistor, display device and conductor contact process
02/10/2010CN100589254C Storage unit, integrated circuit and manufacturing method of the storage unit array
02/10/2010CN100589253C Oxide filling extension groove grid super node MOSFET and its making method
02/10/2010CN100589252C Bipolar junction transistor
02/10/2010CN100589251C Semiconductor component and method for forming the same
02/10/2010CN100589247C Tunnel transistor having spin-dependent transfer characteristics and nonvolatile memory using same
02/09/2010US7661086 Enhanced clock signal flexible distribution system and method
02/09/2010US7660181 Method of making non-volatile memory cell with embedded antifuse
02/09/2010US7660042 Apparatus for crystallizing semiconductor with laser beams
02/09/2010US7659958 Method of manufacturing liquid crystal display and thin film transistor array panel including a data wire having first and second data lines
02/09/2010US7659635 Semiconductor device and method of manufacturing the same
02/09/2010US7659634 Lead frame, method of manufacturing the same, semiconductor device using lead frame and method of manufacturing semiconductor device
02/09/2010US7659633 Solder joint flip chip interconnection having relief structure
02/09/2010US7659632 Solder bump structure and method of manufacturing same
02/09/2010US7659627 Photodiode
02/09/2010US7659625 Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same
02/09/2010US7659624 Semiconductor device having a nanoscale conductive structure
02/09/2010US7659622 Trace design to minimize electromigration damage to solder bumps
02/09/2010US7659619 Structures for Z-aligned proximity communication
02/09/2010US7659608 Stacked die semiconductor device having circuit tape
02/09/2010US7659607 Accessible electronic storage apparatus for use with support frame
02/09/2010US7659603 Semiconductor and method for manufacturing the same
02/09/2010US7659601 Semiconductor device having moisture-proof dam and method of fabricating the same
02/09/2010US7659600 Semiconductor device and method of manufacturing such a device
02/09/2010US7659599 Patterned silicon-on-insulator layers and methods for forming the same
02/09/2010US7659598 Semiconductor ground shield
02/09/2010US7659591 Apparatus having a layer of material configured as a reservoir having an interior capable of holding a liquid
02/09/2010US7659588 Termination for a superjunction device
02/09/2010US7659587 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer
02/09/2010US7659586 Inverter with four-transistor Schmitt trigger
02/09/2010US7659580 Semiconductor device and manufacturing method thereof
02/09/2010US7659579 FETS with self-aligned bodies and backgate holes
02/09/2010US7659578 Semiconductor device having variable thickness insulating film and method of manufacturing same
02/09/2010US7659576 Semiconductor device and method of manufacturing the same
02/09/2010US7659575 Semiconductor device
02/09/2010US7659574 Manufacturing method of semiconductor device
02/09/2010US7659573 Semiconductor device and method of manufacturing the same
02/09/2010US7659571 Semiconductor device and method for manufacturing the same
02/09/2010US7659570 Power MOSFET device structure for high frequency applications
02/09/2010US7659569 Work function engineering for FN erase of a memory device with multiple charge storage elements in an undercut region