Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2010
02/18/2010US20100038677 Semiconductor device for electrostatic discharge protection
02/18/2010US20100038676 Semiconductor Devices with a Field Shaping Region
02/18/2010US20100038675 Power semiconductor devices and methods for manufacturing the same
02/18/2010US20100038656 Nitride LEDs based on thick templates
02/18/2010US20100038653 Diamond electronic devices and methods for their manufacture
02/18/2010US20100038651 Semiconductor device including semiconductor circuit made from semiconductor element and manufacturing method thereof
02/18/2010US20100038647 Thin film transistor array panel and manufacturing method thereof
02/18/2010US20100038646 Method of manufacturing thin film transistor, thin film transistor, and display unit
02/18/2010US20100038642 Thin film transistor array panel and method of manufacturing the same
02/18/2010US20100038641 Thin film field effect transistor
02/18/2010US20100038639 Semiconductor device and manufacturing method thereof
02/18/2010US20100038638 N-type Doping in Metal Oxides and Metal Chalcogenides by Electrochemical Methods
02/18/2010US20100038637 Composite Comprising Array of Needle-Like Crystal, Method for Producing the Same, Photovoltaic Conversion Element, Light Emitting Element, and Capacitor
02/18/2010US20100038629 Anisotropic Semiconductor Film and Method of Production Thereof
02/18/2010US20100038628 Chemical doping of nano-components
02/18/2010US20100038627 Method for fabricating carbon nanotube transistors on a silicon or soi substrate
02/18/2010US20100038625 Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same
02/18/2010US20100038620 Integration methods for carbon films in two- and three-dimensional memories and memories formed therefrom
02/18/2010US20100037731 Silver nanoparticles and process for producing same
02/18/2010DE112008000957T5 Mechanismus zum Bilden einer Remote-Deltadotierungsschicht einer Quantentopfstruktur Mechanism for forming a remote delta doping layer of a quantum well structure
02/18/2010DE102009034405A1 Halbleitervorrichtungen und Verfahren zum Herstellen einer Halbleitervorrichtung Semiconductor devices and the method of manufacturing a semiconductor device
02/18/2010DE102009030026A1 Kondensatorstruktur Capacitor structure
02/18/2010DE102009011349A1 Halbleiterbauelement mit inhärenten Kapazitäten und Verfahren zur Herstellung desselben Of the same semiconductor device with inherent capacity and process for preparing
02/18/2010DE102008001000B4 Schichtsystem für Elektroden Layer system for electrodes
02/18/2010DE102007004861B4 Transistor mit eingebettetem Si/Ge-Material auf einem verspannten Halbleiter-auf-Isolator-Substrat und Verfahren zum Herstellen des Transistors Transistor with embedded Si / Ge material on a strained semiconductor-on-insulator substrate and method for fabricating the transistor
02/18/2010DE102006046727B4 Verfahren zur Herstellung einer Halbleiterstruktur mit einem Varaktor und einem Hochfrequenztransistor A method of fabricating a semiconductor structure including a varactor, and a high-frequency transistor
02/18/2010DE102006028543B4 Integrierte SiGe-NMOS- und PMOS-Transistoren in einem Hochleistungs-BICMOS-Prozess Integrated SiGe NMOS and PMOS transistors in a high performance BiCMOS process
02/18/2010DE102005038998B4 Metalloxidhalbleiter-Bauelement mit verbesserter Abschirmstruktur und Verfahren zur Herstellung Metal oxide semiconductor device having an improved shielding structure and methods for preparing
02/18/2010CA2675187A1 Methods for producing carboxylic acid stabilized silver nanoparticles
02/17/2010EP2154726A2 A method for producing a JBS diode
02/17/2010EP2154725A1 Silicon carbide zener diode
02/17/2010EP2154724A2 Flexible flat structure with a layer having microstructures, method for producing the flexible flat structure and use thereof
02/17/2010EP2154723A2 MESA termination structures for power semiconductor devices
02/17/2010EP2154719A2 Semiconductor device and method of manufacturing the same
02/17/2010EP2154718A2 Polymer Devices
02/17/2010EP2154712A1 Method for preparing a partially or fully semi-insulating or P-doped ZnO substrate, substrates obtained, and electronic, electro-optical or optoelectronic devices comprising same.
02/17/2010EP2154174A1 Polymer compound and method for producing the same, and light-emitting material, liquid composition, thin film, polymer light-emitting device, surface light source, display device, organic transistor and solar cell, each using the polymer compound
02/17/2010EP2154172A1 Polymer compound and method for producing the same, and light-emitting material, liquid composition, thin film, polymer light-emitting device, surface light source, display device, organic transistor and solar cell, each using the polymer compound
02/17/2010EP2153468A1 Manufacturing method of thin film transistor using oxide semiconductor
02/17/2010EP2153467A1 Method for suppressing layout sensitivity of threshold voltage in a transistor array
02/17/2010EP2153463A1 Memory arrays, semiconductor constructions and electronic systems; and methods of forming memory arrays, semiconductor constructions and electronic systems
02/17/2010CN201408763Y Low-inductance gated thyristor and power semiconductor component thereof
02/17/2010CN201408762Y Insulation pressure cell
02/17/2010CN201408751Y Welding type automobile rectifier diode base
02/17/2010CN201408750Y Press-in type automobile rectifier diode shell
02/17/2010CN101652864A Organic electroluminescence display device
02/17/2010CN101652863A ZnO semiconductor element
02/17/2010CN101651153A Semiconductor device and manufacture method thereof
02/17/2010CN101651152A 半导体器件 Semiconductor devices
02/17/2010CN101651151A Heterostructure field effect transistor with functional characteristics
02/17/2010CN101651150A Full oxide heterostructure field effect transistor
02/17/2010CN101651149A HBT structure with controllable working frequency in RF field
02/17/2010CN101651148A ZnO group heterojunction and preparation method thereof
02/17/2010CN101651105A Semiconductor device and manufacturing method thereof
02/17/2010CN100590889C Semiconductor device and producing method thereof
02/17/2010CN100590888C Mos field effect transistor and method of fabricating the same
02/17/2010CN100590887C Semiconductor device fabricating method
02/17/2010CN100590886C Semiconductor electronic device
02/17/2010CN100590885C P-type metal oxide semiconductor and semiconductor apparatus
02/17/2010CN100590884C 半导体器件 Semiconductor devices
02/17/2010CN100590883C A MOS FET tube manufacturing method
02/17/2010CN100590882C Semiconductor device and method for integrating angle form device and planer device on the same chip
02/17/2010CN100590739C 半导体集成电路器件 The semiconductor integrated circuit device
02/17/2010CN100590499C Thin film transistor array panel and method of manufacturing the same
02/16/2010US7664998 Non-volatile memory and accelerated test method for address decoder by added modified dummy memory cells
02/16/2010US7663915 Nonvolatile memory
02/16/2010US7663911 Isolation structure for deflectable nanotube elements
02/16/2010US7663684 Charge transfer device and a solid state imaging device using the charge transfer device
02/16/2010US7663583 In-Plane Switching mode liquid crystal display device
02/16/2010US7663305 Light emitting device and method of manufacturing the same
02/16/2010US7663252 Electric power semiconductor device
02/16/2010US7663250 Wafer level package and manufacturing method thereof
02/16/2010US7663249 Embedded chip package structure
02/16/2010US7663248 Flip-chip component
02/16/2010US7663244 Semiconductor device and semiconductor wafer and a method for manufacturing the same
02/16/2010US7663239 Semiconductor device and method for fabricating the same
02/16/2010US7663238 Wiring material and a semiconductor device having a wiring using the material, and the manufacturing method thereof
02/16/2010US7663220 Semiconductor device module structure
02/16/2010US7663207 Semiconductor device
02/16/2010US7663205 Integrated circuit devices including a dummy gate structure below a passive electronic element
02/16/2010US7663204 Substrate for multi-chip stacking, multi-chip stack package utilizing the substrate and its applications
02/16/2010US7663203 High-voltage PMOS transistor
02/16/2010US7663201 Semiconductor device with a diffusion barrier film having a spacing for stress relief of solder bump
02/16/2010US7663199 High power light emitting diode package and fabrication method thereof
02/16/2010US7663196 Integrated passive device and method of fabrication
02/16/2010US7663195 P-channel power MIS field effect transistor and switching circuit
02/16/2010US7663194 CMOS image sensor
02/16/2010US7663188 Vertical floating body cell of a semiconductor device and method for fabricating the same
02/16/2010US7663187 Semiconductor device and method of fabricating the same
02/16/2010US7663186 Semiconductor device
02/16/2010US7663185 FIN-FET device structure formed employing bulk semiconductor substrate
02/16/2010US7663184 Memory and method of fabricating the same
02/16/2010US7663183 Vertical field-effect transistor and method of forming the same
02/16/2010US7663182 Vertical trench gate transistor semiconductor device and method for fabricating the same
02/16/2010US7663181 Semiconductor device
02/16/2010US7663180 Semiconductor device
02/16/2010US7663179 Semiconductor device with rewritable nonvolatile memory cell
02/16/2010US7663178 Nonvolatile semiconductor memory with resistance elements and method of manufacturing the same
02/16/2010US7663177 Non-volatile memory device and fabricating method thereof
02/16/2010US7663175 Semiconductor integrated circuit device