Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2010
01/21/2010US20100013020 Semiconductor device with semi-insulating substrate portions
01/21/2010US20100013015 Metal source/drain schottky barrier silicon-on-nothing mosfet device
01/21/2010US20100013014 Field effect transistor having source and/or drain forming schottky or schottky-like contact with strained semiconductor substrate
01/21/2010US20100013013 1t/0c ram cell with a wrapped-around gate device structure
01/21/2010US20100013012 Integrated complementary low voltage rf-ldmos
01/21/2010US20100013011 Vertical mosfet with through-body via for gate
01/21/2010US20100013010 Power semiconductor device
01/21/2010US20100013009 Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance
01/21/2010US20100013008 Semiconductor device and method of manufacturing the same
01/21/2010US20100013007 Semiconductor device and method for manufacturing the same
01/21/2010US20100013006 Semiconductor device
01/21/2010US20100013005 Integrated circuit including a vertical transistor and method
01/21/2010US20100013004 Recessed channel transistor and method for preparing the same
01/21/2010US20100013003 Non-volatile memory cell with a hybrid access transistor
01/21/2010US20100013002 Nonvolatile storage device and method for manufacturing the same
01/21/2010US20100013001 Method for manufacturing non-volatile memory and structure thereof
01/21/2010US20100013000 Memory apparatus
01/21/2010US20100012999 Semiconductor memory device and method of manufacturing the same
01/21/2010US20100012998 Flash memory device with stacked dielectric structure including zirconium oxide and method for fabricating the same
01/21/2010US20100012997 3-dimensional flash memory device, method of fabrication and method of operation
01/21/2010US20100012996 Dynamic random access memory structure
01/21/2010US20100012995 Localized biasing for silicon on insulator structures
01/21/2010US20100012994 Semiconductor storage device
01/21/2010US20100012992 Method of manufacturing semiconductor device
01/21/2010US20100012991 Semiconductor device and method for fabricating semiconductor device
01/21/2010US20100012990 Mosfets including crystalline sacrificial structures
01/21/2010US20100012989 Semiconductor device and method of fabricating the same
01/21/2010US20100012988 Metal oxide semiconductor devices having implanted carbon diffusion retardation layers and methods for fabricating the same
01/21/2010US20100012987 Field Effect Transistor Based Sensor
01/21/2010US20100012981 Semiconductor Device Portion Having Gate Electrode Conductive Structures Formed from Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing and Having Corresponding Non-Symmetric Diffusion Regions
01/21/2010US20100012980 Contact Structures in Substrate Having Bonded Interface, Semiconductor Device Including the Same, Methods of Fabricating the Same
01/21/2010US20100012978 Normally-off field-effect semiconductor device
01/21/2010US20100012977 Semiconductor device
01/21/2010US20100012976 Polishing of small composite semiconductor materials
01/21/2010US20100012975 Transistor device having asymmetric embedded strain elements and related manufacturing method
01/21/2010US20100012972 Silicon-Germanium Hydrides and Methods for Making and Using Same
01/21/2010US20100012952 Nitride-Based Transistors Having Laterally Grown Active Region and Methods of Fabricating Same
01/21/2010US20100012951 Silicon carbide semiconductor device and method for producing the same
01/21/2010US20100012950 Crackstop structures and methods of making same
01/21/2010US20100012949 Substrate, in particular made of silicon carbide, coated with a thin stoichiometric film of silicon nitride, for making electronic components, and method for obtaining such a film
01/21/2010US20100012948 Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
01/21/2010US20100012947 PROCESS FOR MAKING A GaN SUBSTRATE
01/21/2010US20100012945 Method of forming photoresist burr edge and method of manufacturing array substrate
01/21/2010US20100012944 Thin film transistor substrate and thin film transistor of display panel and method of making the same
01/21/2010US20100012943 Thin film transistor and manufacturing method thereof
01/21/2010US20100012942 Poly-si thin film transistor and method of manufacturing the same
01/21/2010US20100012940 Image Display Device and Manufacturing Method for the Same
01/21/2010US20100012938 Thin film transistor substrate and method for manufacturing same
01/21/2010US20100012937 Thin film transistor array substrate and method for fabricating the same
01/21/2010US20100012936 Manufacturing method of flexible semiconductor device and flexible semiconductor device
01/21/2010US20100012935 Cu alloy wiring film, tft element for flat-panel display using the cu alloy wiring film, and cu alloy sputtering target for depositing the cu alloy wiring film
01/21/2010US20100012932 Metal oxide tft with improved carrier mobility
01/21/2010US20100012927 Devices having vertically-disposed nanofabric articles and methods of making the same
01/21/2010US20100012925 Hybrid carbon nanotube fet (cnfet)-fet static ram (sram) and method of making same
01/21/2010US20100012924 Hetero junction field effect transistor and method of fabricating the same
01/21/2010US20100012923 Dopant material, dopant material manufacturing method, and semiconductor device using the same
01/21/2010US20100012922 Methods of forming structures including nanotubes and structures including same
01/21/2010US20100012921 Nanowire, device comprising nanowire, and their production methods
01/21/2010US20100012919 Gas sensor having zinc oxide nano-structures and method of fabricating the same
01/21/2010US20100012030 Process for Deposition of Semiconductor Films
01/21/2010DE19626787B4 Herstellungsverfahren einer Halbleitervorrichtung Manufacturing method of a semiconductor device
01/21/2010DE112006000151B4 Herstellungsverfahren für CMOS Transistsorübergangsbereiche, die durch ein CVD Ätzen gebildet sind und eine Ablagerungsabfolge in ein und derselben Kammer A method for manufacturing CMOS Transistsorübergangsbereiche formed by a CVD deposition and etching sequence in one and the same chamber
01/21/2010DE10351006B4 Verfahren zur Herstellung eines Transistors mit erhöhten Drain- und Source-Gebieten, wobei eine reduzierte Anzahl von Prozessschritten erforderlich ist A method of manufacturing a transistor with raised drain and source regions, wherein a reduced number of process steps is required
01/21/2010DE102009020348A1 Halbleitervorrichtung und Verfahren zur Herstellung derselben A semiconductor device and method of manufacturing the same
01/21/2010DE102008036400B3 Photonenpaarquelle und Verfahren zu deren Herstellung Photon pair source, and processes for their preparation
01/21/2010DE102008033410A1 Leistungselektronische Verbindungseinrichtung und Herstellungsverfahren hierzu Power electronic coupling device and manufacturing method therefor
01/21/2010DE102005053877B4 Drucksensor-Bauelement Pressure sensor component
01/20/2010EP2146380A1 Semiconductor device
01/20/2010EP2146379A1 Channel layer and transistor comprising the same
01/20/2010EP2146378A2 Semiconductor device
01/20/2010EP2146377A2 Trench gate field effect devices
01/20/2010EP2146371A1 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
01/20/2010EP1449256B1 A field effect transistor semiconductor device
01/20/2010EP1393381B1 Method for soi device with reduced junction capacitance
01/20/2010EP1309995B1 Method and apparatus for measuring parameters of an electronic device
01/20/2010CN101632179A Semiconductor element, method for manufacturing the semiconductor element, and electronic device provided with the semiconductor element
01/20/2010CN101632178A Short channel lv, mv, and hv CMOS devices
01/20/2010CN101630693A Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
01/20/2010CN101630692A Channel layers and semiconductor devices including the same
01/20/2010CN101630691A Embedded metal gate electrode thin film transistor
01/20/2010CN100583493C Top-emission organic electroluminescent display and method of fabricating the same
01/20/2010CN100583460C PIN diode and method for making PIN diode and forming semiconductor fin structure
01/20/2010CN100583459C Pixel structure and its thin film transistor
01/20/2010CN100583458C Pixel structure, thin-film transistor and production method thereof
01/20/2010CN100583457C Thin film transistor having channel comprising zinc oxide and manufacturing method thereof
01/20/2010CN100583456C Glass substrate surface metal-layer structure and its production
01/20/2010CN100583455C Semiconductor device having super junction structure and method of manufacturing the same
01/20/2010CN100583454C Fin FET device and its making method
01/20/2010CN100583453C Ldmos晶体管 Ldmos transistor
01/20/2010CN100583452C Method of fabricating a FET
01/20/2010CN100583451C Semiconductor device and method for fabricating the same
01/20/2010CN100583450C Semiconductor device and its making method
01/20/2010CN100583449C Semiconductor device and a method of manufacturing thereof
01/20/2010CN100583448C Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof
01/20/2010CN100583447C Semiconductor device with a bipolar transistor and method of manufacturing such a device
01/20/2010CN100583445C Substrate material and heterostructure
01/20/2010CN100583443C Thin-film transistor structure and preparation method thereof
01/20/2010CN100583442C Architecture for assisted-charge memory array
01/20/2010CN100583440C Dual-gate dynamic random access memory device and method of fabricating the same
01/20/2010CN100583439C Method and device with durable contact on silicon carbide