Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2010
02/16/2010US7663174 Semiconductor device and method for manufacturing the same
02/16/2010US7663172 Vertical memory device and method
02/16/2010US7663171 Magneto-resistance effect element and magnetic memory
02/16/2010US7663165 Transparent-channel thin-film transistor-based pixels for high-performance image sensors
02/16/2010US7663162 Compound semiconductor device and doherty amplifier using compound semiconductor device
02/16/2010US7663161 Transistor for preventing current collapse and having improved leakage current characteristics and method for fabricating the same
02/16/2010US7663159 Seal ring corner design
02/16/2010US7663150 Optoelectronic chip
02/16/2010US7663147 Display apparatus and fabricating method thereof
02/16/2010US7663146 Active matrix addressing liquid-crystal display device
02/16/2010US7663145 Display panel and method for manufacturing the same
02/16/2010US7663143 Thin film transistor having a short channel formed by using an exposure mask with slits
02/16/2010US7663142 Light emitting device and method of manufacturing the same
02/16/2010US7663138 Nitride semiconductor light emitting element
02/16/2010US7663137 Phase change memory cell and method of formation
02/16/2010US7663136 Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same
02/16/2010US7663132 Resistance change memory device
02/16/2010US7662731 Quantum dot manipulating method and quantum dot production/manipulation apparatus
02/16/2010US7662704 Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device
02/16/2010US7662701 Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
02/16/2010US7662696 Method for fabricating semiconductor devices
02/16/2010US7662686 Semiconductor device and a method of manufacturing the same
02/16/2010US7662683 Method for forming gate dielectric layer
02/16/2010US7662678 Method of forming a more highly-oriented silicon layer and substrate having the same
02/16/2010US7662677 Method of fabricating semiconductor device
02/16/2010US7662660 Thin film transistor array substrate and fabrication method thereof
02/16/2010US7662658 Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation
02/16/2010US7662652 Chemical sensor using semiconducting metal oxide nanowires
02/16/2010US7662651 Thin film transistor array panel and method of manufacturing the same
02/16/2010US7662645 Reworked integrated circuit device and reworking method thereof
02/16/2010US7662265 Making bipolar electrochemical devices, such as batteries, using electrophoresis; bipolar device is assembled by applying a field that creates a physical separation between two active electrode materials without requiring insertion of a discrete separator film or electrolyte layer
02/16/2010US7662239 Low surface roughness and high yield obtained by pasting gallium nitride as-grown wafers on a polishing plate with notches facing forward, backward, or inward, with thermoplastic wax having a thickness of < 10 mu m , grinding,lapping, polishing into mirror wafers and beveling
02/16/2010US7662236 Method for forming insulation film
02/16/2010CA2334339C Methods of fabricating silicon carbide power devices by controlled annealing
02/11/2010WO2010017088A1 Hybrid dielectric material for thin film transistors
02/11/2010WO2010016966A1 Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
02/11/2010WO2010016564A1 Semiconductor device
02/11/2010WO2010016511A1 Compound for organic thin film transistor and organic thin film transistor using the same
02/11/2010WO2010016445A1 Rectifier
02/11/2010WO2010016388A1 Schottky barrier diode and method for manufacturing schottky barrier diode
02/11/2010WO2010016331A1 Method for producing device
02/11/2010WO2010016213A1 Field effect transistor
02/11/2010WO2010016212A1 Field effect transistor manufacturing method
02/11/2010WO2010016207A1 Flexible semiconductor device and method for manufacturing same
02/11/2010WO2010016206A1 Method for manufacturing flexible semiconductor device
02/11/2010WO2010016191A1 Semiconductor device and method for manufacturing same
02/11/2010WO2010016008A1 Ldmos with discontinuous metal stack fingers
02/11/2010WO2010015106A1 An ac led structure
02/11/2010US20100035424 Semiconductor Device and Fabrication Method Thereof
02/11/2010US20100035407 Method for manufacturing semiconductor device
02/11/2010US20100035398 Field effect transistor and method for manufacturing the same
02/11/2010US20100035395 Methods of forming memory cells on pillars and memories with memory cells on pillars
02/11/2010US20100035391 Method for manufacturing diode-connected transistor and image display device using the same
02/11/2010US20100035379 Method for manufacturing semiconductor device
02/11/2010US20100035375 Maskless nanofabrication of electronic components
02/11/2010US20100034023 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
02/11/2010US20100034014 Magnetoresistive Element, Magnetic Memory Cell and Magnetic Random Access Memory Using the Same
02/11/2010US20100032812 Method for forming silicon germanium layers at low temperatures, layers formed therewith and structures comprising such layers
02/11/2010US20100032806 Epitaxial silicon wafer and production method thereof
02/11/2010US20100032805 Methods and structures for relaxation of strained layers
02/11/2010US20100032804 High voltage bipolar transistor and method of fabrication
02/11/2010US20100032803 Capacitor contact formed concurrently with bond pad metallization
02/11/2010US20100032802 Assembling of Electronic Members on IC Chip
02/11/2010US20100032801 Capacitor formed in interlevel dielectric layer
02/11/2010US20100032800 Capacitor Structure
02/11/2010US20100032799 Implementing Decoupling Capacitors With Hot-Spot Thermal Reduction on Integrated Circuit Chips
02/11/2010US20100032794 High voltage diode with reduced substrate injection
02/11/2010US20100032792 Semiconductor device and method of manufacturing the same
02/11/2010US20100032791 Semiconductor device and method of manufacturing the same
02/11/2010US20100032790 Rectifier With PN Clamp Regions Under Trenches
02/11/2010US20100032785 Solid-state imaging device and method for manufacturing the same
02/11/2010US20100032780 Mram with eddy current barrier
02/11/2010US20100032779 Semiconductor device and method of manufacturing the same
02/11/2010US20100032777 Magnetic memory cell construction
02/11/2010US20100032775 Thin-film lid mems devices and methods
02/11/2010US20100032774 Low cost high voltage power fet and fabrication
02/11/2010US20100032773 Semiconductor Devices and Methods for Manufacturing a Semiconductor Device
02/11/2010US20100032772 Semiconductor device
02/11/2010US20100032771 Short-channel schottky-barrier mosfet device and manufacturing method
02/11/2010US20100032770 Ic resistor formed with integral heatsinking structure
02/11/2010US20100032769 Implanted well breakdown in high voltage devices
02/11/2010US20100032766 Bipolar Junction Transistor with a Reduced Collector-Substrate Capacitance
02/11/2010US20100032765 Semiconductor device
02/11/2010US20100032763 Multiple-gate transistors and processes of making same
02/11/2010US20100032760 Thin-film transistor substrate and method of fabricating the same
02/11/2010US20100032759 self-aligned soi schottky body tie employing sidewall silicidation
02/11/2010US20100032758 Ldmos device for esd protection circuit
02/11/2010US20100032756 Buried floating layer structure for improved breakdown
02/11/2010US20100032754 Semiconductor device and method of manufacturing the semiconductor device
02/11/2010US20100032753 MOS Transistor Including Extended NLDD Source-Drain Regions For Improved Ruggedness
02/11/2010US20100032752 Semiconductor device and method of manufacturing the same
02/11/2010US20100032751 Super-self-aligned trench-dmos structure and method
02/11/2010US20100032750 Power Semiconductor Device And Method Therefor
02/11/2010US20100032749 Field-Effect Device and Manufacturing Method Thereof
02/11/2010US20100032747 Semiconductor memory device and method for manufacturing the same
02/11/2010US20100032746 Use of dilute steam ambient for improvement of flash devices
02/11/2010US20100032745 Semiconductor device and fabricating method thereof
02/11/2010US20100032744 Reduced Area Single Poly EEPROM
02/11/2010US20100032741 Semiconductor device and a method of manufacturing the same
02/11/2010US20100032739 Methods Of Forming Vertical Field Effect Transistors, vertical field effect transistors, and dram cells
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