Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2010
02/23/2010US7667223 Solid-state optical device
02/23/2010US7667219 Reduced current phase-change memory device
02/23/2010US7667218 Semiconductor integrated circuit device and method of manufacturing the same
02/23/2010US7666799 Epitaxial growth of relaxed silicon germanium layers
02/23/2010US7666775 Split poly-SiGe/poly-Si alloy gate stack
02/23/2010US7666769 Method for fabricating image display device
02/23/2010US7666764 Compound semiconductor material and method for forming an active layer of a thin film transistor device
02/23/2010US7666756 Methods of fabricating isolation structures in epi-less substrate
02/23/2010US7666744 Method of manufacturing a semiconductor device having a trench surrounding plural unit cells
02/23/2010US7666734 Semiconductor device having a fuse
02/23/2010US7666733 Method for making a vertical MOS transistor with embedded gate
02/23/2010US7666731 Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor
02/23/2010US7666728 Manufacturing method of semiconductor device
02/23/2010US7666727 Semiconductor device having a laterally modulated gate workfunction and method of fabrication
02/23/2010US7666722 Manufacturing method of semiconductor device, and IC card, IC tag, RFID, transponder, bill, securities, passport, electronic apparatus, bag, and garment
02/23/2010US7666719 Peeling method
02/23/2010US7666718 Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method
02/23/2010US7666708 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
02/23/2010US7666695 Array substrates of liquid crystal display and fabrication method thereof
02/23/2010CA2409683C Variable capacitance capacitor
02/19/2010CA2638452A1 High quality ultra-thin gate dielectric
02/18/2010WO2010018912A1 Method for completely eliminating charge trap from the source (or drain) and the bulk region of a vertical transistor
02/18/2010WO2010018875A1 Process for producing field effect transistor
02/18/2010WO2010018864A1 Display device, cu alloy film for use in the display device, and cu alloy sputtering target
02/18/2010WO2010018797A1 Plasma doping method and semiconductor device manufacturing method
02/18/2010WO2010018070A1 Metal-gate high-k reference structure
02/18/2010WO2009154886A3 Diodes, and methods of forming diodes
02/18/2010WO2009140224A3 Power field effect transistor
02/18/2010WO2009132162A3 Integrated low leakage schottky diode
02/18/2010WO2009132004A3 Multi-rate resist method to form organic tft electrode and electrodes formed by same
02/18/2010WO2009129391A3 Low temperature thin film transistor process, device property, and device stability improvement
02/18/2010WO2009129049A3 Methods of making lateral junction field effect transistors using selective epitaxial growth
02/18/2010WO2006060599A3 Semiconductor devices based on coalesced nano-rod arrays
02/18/2010US20100041907 Hydrazine-free solution deposition of chalcogenide films
02/18/2010US20100041201 Methods of Fabricating MOS Transistors Having Recesses with Elevated Source/Drain Regions
02/18/2010US20100041193 Nonvolatile semiconductor memory device and method of manufacturing the same
02/18/2010US20100041187 Semiconductor device and method for forming the same
02/18/2010US20100040891 Hydrazine-free solution deposition of chalcogenide films
02/18/2010US20100040866 Hydrazine-free solution deposition of chalcogenide films
02/18/2010US20100040769 Method for Manufacturing a Triple Wavelengths White Led
02/18/2010US20100039869 Multi-state memory cell with asymmetric charge trapping
02/18/2010US20100039867 Electrically Isolated Gated Diode Nonvolatile Memory
02/18/2010US20100039865 Non-volatile semiconductor memory device and method of making the same
02/18/2010US20100039602 Electro-optical device and method for manufacturing the same
02/18/2010US20100039599 Thin film transistor array panel for liquid crystal display
02/18/2010US20100038791 Resistive random access memory and method for fabricating the same
02/18/2010US20100038757 Silicon wafer, method for manufacturing the same and method for heat-treating the same
02/18/2010US20100038756 (110) oriented silicon substrate and a bonded pair of substrates comprising said (110) oriented silicon substrate
02/18/2010US20100038755 Silicon wafer with controlled distribution of embryos that become oxygen precipitates by succeeding annealing and its manufacturing method
02/18/2010US20100038754 Back-End-of-Line Resistive Semiconductor Structures
02/18/2010US20100038753 Variable capacitor employing MEMS technology
02/18/2010US20100038752 Modular & scalable intra-metal capacitors
02/18/2010US20100038751 Structure and method for manufacturing trench capacitance
02/18/2010US20100038750 Structure, Design Structure and Method of Manufacturing a Structure Having VIAS and High Density Capacitors
02/18/2010US20100038749 Contact and VIA Interconnects Using Metal Around Dielectric Pillars
02/18/2010US20100038748 Electric fuse circuit and electronic component
02/18/2010US20100038742 Semiconductor device and manufacturing method thereof
02/18/2010US20100038735 Magnet-assisted transistor devices
02/18/2010US20100038734 Vibration sensor and method for manufacturing the vibration sensor
02/18/2010US20100038732 Micro movable device
02/18/2010US20100038731 Non-volatile memory device
02/18/2010US20100038730 Semiconductor structures including a movable switching element, systems including same and methods of forming same
02/18/2010US20100038729 Method of manufacturing semiconductor device and semiconductor device
02/18/2010US20100038728 Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method
02/18/2010US20100038727 Carbon-Doped Epitaxial SiGe
02/18/2010US20100038726 Radiation hardened device
02/18/2010US20100038723 Self-aligned borderless contacts for high density electronic and memory device integration
02/18/2010US20100038722 Mis transistor and cmos transistor
02/18/2010US20100038718 Electro-static discharge and latchup resistant semiconductor device
02/18/2010US20100038717 Semiconductor on Insulator Apparatus
02/18/2010US20100038716 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
02/18/2010US20100038715 Thin body silicon-on-insulator transistor with borderless self-aligned contacts
02/18/2010US20100038714 Device and process involving pinhole undercut area
02/18/2010US20100038713 Self-aligned tunneling pocket in field-effect transistors and processes to form same
02/18/2010US20100038712 Power semiconductor device
02/18/2010US20100038711 Trenched mosfet with guard ring and channel stop
02/18/2010US20100038710 Vertical power MOSFET semiconductor apparatus having separate base regions and manufacturing method thereof
02/18/2010US20100038709 Vertical transistor and array with vertical transistors
02/18/2010US20100038708 Method and Structure for Forming a Shielded Gate Field Effect Transistor
02/18/2010US20100038707 Semiconductor device
02/18/2010US20100038706 Semiconductor device
02/18/2010US20100038705 Field effect device with gate electrode edge enhanced gate dielectric and method for fabrication
02/18/2010US20100038703 Non-volatile semiconductor storage device
02/18/2010US20100038702 Nonvolatile memory device and methods of forming the same
02/18/2010US20100038701 Integrated two device non-volatile memory
02/18/2010US20100038700 Semiconductor Device
02/18/2010US20100038699 Nonvolatile semiconductor memory device and method for manufacturing same
02/18/2010US20100038698 High density flash memory device , cell string fabricating method thereof
02/18/2010US20100038697 Non-volatile two-transistor programmable logic cell and array layout
02/18/2010US20100038696 Semiconductor Device and Method for Making Same
02/18/2010US20100038693 Semiconductor device
02/18/2010US20100038687 Selective deposition of amorphous silicon films on metal gates
02/18/2010US20100038686 Soi substrates and devices on soi substrates having a silicon nitride diffusion inhibition layer and methods for fabricating
02/18/2010US20100038685 Enhanced dislocation stress transistor
02/18/2010US20100038684 Transistor layout for manufacturing process control
02/18/2010US20100038683 Integrated circuit modeling, design, and fabrication based on degradation mechanisms
02/18/2010US20100038682 Electronic devices with improved ohmic contact
02/18/2010US20100038681 Transistor
02/18/2010US20100038680 Iii-nitride semiconductor field effect transistor
02/18/2010US20100038678 Photodiode with a Reduced Dark Current and Method for the Production Thereof