Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2010
03/02/2010US7670881 Method of manufacturing a semiconductor device
03/02/2010US7670858 Semiconductor device and manufacturing method thereof
03/02/2010US7670755 Writing pattern; data processing; etching masking film; removal segments of photoresists; generating method comprising correcting a first pattern data in accordance with a difference between first film pattern and second mask pattern and difference between first resist pattern and first mask pattern
03/02/2010US7670496 Process for producing structural body and etchant for silicon oxide film
03/02/2010US7670469 Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
02/2010
02/25/2010WO2010021683A1 Method for fabricating a semiconductor device with self-aligned stressor and extension regions
02/25/2010WO2010021536A2 Durable planar reference electrode
02/25/2010WO2010021361A1 Negative resistance element using magnetoresistive effect
02/25/2010WO2010021349A1 Field effect transistor, display element, image display device, and system
02/25/2010WO2010021146A1 Semiconductor device
02/25/2010WO2010021136A1 Semiconductor device and semiconductor device manufacturing method
02/25/2010WO2010021106A1 Semiconductor device, method for manufacturing semiconductor device, transistor substrate, light emitting device and display device
02/25/2010WO2010021099A1 Field effect transistor
02/25/2010WO2010020546A1 Dual metal gate corner
02/25/2010WO2010020046A1 Doped dielectric layers and method for formation thereof
02/25/2010WO2009132039A3 Enhancement mode iii-n hemts
02/25/2010US20100047991 High-k dielectric film, method of forming the same and related semiconductor device
02/25/2010US20100047946 Thin film array panel and manufacturing method thereof
02/25/2010US20100046567 Propagation of misfit dislocations from buffer/si interface into si
02/25/2010US20100046288 Magnetic random access memory and method of manufacturing the same
02/25/2010US20100046284 Mram
02/25/2010US20100046205 Opto-electronic device
02/25/2010US20100045365 Two terminal quantum device using mos capacitor structure
02/25/2010US20100045169 Nano electronic devices
02/25/2010US20100044866 Semiconductor device having via connecting between interconnects
02/25/2010US20100044839 Semiconductor device and manufacturing method thereof
02/25/2010US20100044837 Replication and transfer of microstructures and nanostructures
02/25/2010US20100044836 PROCESS FOR PRODUCING LOCALISED Ge0I STRUCTURES, OBTAINED BY GERMANIUM CONDENSATION
02/25/2010US20100044833 Integrated capacitor
02/25/2010US20100044832 Structure of trench capacitor and method for manufacturing the same
02/25/2010US20100044831 Multi-layer film capacitor with tapered film sidewalls
02/25/2010US20100044829 Method for producing soi substrate and soi substrate
02/25/2010US20100044828 Monolithic integrated composite device having silicon integrated circuit and silicon optical device integrated thereon, and fabrication method thereof
02/25/2010US20100044827 Method for making a substrate structure comprising a film and substrate structure made by same method
02/25/2010US20100044825 Semiconductor device and method for the production of a semiconductor device
02/25/2010US20100044811 Integrated circuit encapsulation and method therefor
02/25/2010US20100044810 Semiconductor Structural Element
02/25/2010US20100044809 Sensor Device Packaging And Method
02/25/2010US20100044808 method of manufacturing a mems element
02/25/2010US20100044807 CMOS-Compatible Microstructures and Methods of Fabrication
02/25/2010US20100044806 Integrated circuit metal gate structure and method of fabrication
02/25/2010US20100044805 METAL GATES WITH LOW CHARGE TRAPPING AND ENHANCED DIELECTRIC RELIABILITY CHARACTERISTICS FOR HIGH-k GATE DIELECTRIC STACKS
02/25/2010US20100044804 Novel high-k metal gate structure and method of making
02/25/2010US20100044803 Sealing structure for high-k metal gate and method of making
02/25/2010US20100044802 Semiconductor device and manufacturing method thereof
02/25/2010US20100044797 Semiconductor device and method of fabricating the same
02/25/2010US20100044796 Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications
02/25/2010US20100044794 Asymmetric multi-gated transistor and method for forming
02/25/2010US20100044793 Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate
02/25/2010US20100044792 Charged balanced devices with shielded gate trench
02/25/2010US20100044791 Configurations and methods for manufacturing charge balanced devices
02/25/2010US20100044790 Semiconductor device and method of etc.
02/25/2010US20100044789 Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same
02/25/2010US20100044788 Semiconductor device with a charge carrier compensation structure and process
02/25/2010US20100044787 Semiconductor device and method of manufacturing the same
02/25/2010US20100044786 Semiconductor device
02/25/2010US20100044785 High aspect ratio trench structures with void-free fill material
02/25/2010US20100044784 Vertical Channel Fin Field-Effect Transistors Having Increased Source/Drain Contact Area and Methods for Fabricating the Same
02/25/2010US20100044783 Integrated circuit metal gate structure and method of fabrication
02/25/2010US20100044781 Semiconductor device
02/25/2010US20100044780 Transistor with gain variation compensation
02/25/2010US20100044779 Memory devices capable of reducing lateral movement of charges
02/25/2010US20100044778 Non-volatile memory device and method of manufacturing same
02/25/2010US20100044777 Reconfigurable semiconductor device
02/25/2010US20100044776 Nonvolatile semiconductor memory device and method for manufacturing same
02/25/2010US20100044775 Semiconductor memory device and semiconductor device
02/25/2010US20100044774 Flash memory device and method of fabricating the same
02/25/2010US20100044773 Semiconductor memory device
02/25/2010US20100044772 Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor device
02/25/2010US20100044771 Zr-Sn-Ti-O FILMS
02/25/2010US20100044770 Semiconductor device and method of fabricating the same
02/25/2010US20100044769 Method of manufacture of contact plug and interconnection layer of semiconductor device
02/25/2010US20100044768 Reduced-edge radiation-tolerant non-volatile transistor memory cells
02/25/2010US20100044767 Structure and fabrication method for capacitors integratible with vertical replacement gate transistors
02/25/2010US20100044766 Method of manufacturing semiconductor device and semiconductor device
02/25/2010US20100044765 Semiconductor device
02/25/2010US20100044762 Method for forming a semiconductor device and structure thereof
02/25/2010US20100044761 Semiconductor device and methods for fabricating same
02/25/2010US20100044760 Self-aligned impact-ionization field effect transistor
02/25/2010US20100044759 Double-sided integrated circuit chips
02/25/2010US20100044758 Cmos with channel p-finfet and channel n-finfet having different crystalline orientations and parallel fins
02/25/2010US20100044757 Semiconductor device having a contact plug and manufacturing method thereof
02/25/2010US20100044754 Strained transistor integration for cmos
02/25/2010US20100044753 Semiconductor device
02/25/2010US20100044752 Semiconductor device and manufacturing method
02/25/2010US20100044751 Enhancement mode iii-nitride device with floating gate and process for its manufacture
02/25/2010US20100044750 Electrostatic protection element
02/25/2010US20100044749 Bidirectional semiconductor device, method of fabricating the same, and semiconductor device incorporating the same
02/25/2010US20100044721 Method of producing semiconductor device and semiconductor device
02/25/2010US20100044720 Semiconductor device with a reduced band gap and process
02/25/2010US20100044719 III-V Compound Semiconductor Epitaxy Using Lateral Overgrowth
02/25/2010US20100044718 Group III Nitride Articles and Methods for Making Same
02/25/2010US20100044717 Thin film transistor panel and method of manufacturing the same
02/25/2010US20100044715 Thin film transistor array substrate and method of fabricating the same
02/25/2010US20100044713 Liquid crystal display device and electronic device provided with the same
02/25/2010US20100044709 Thin film transistor, manufacturing method thereof and display device
02/25/2010US20100044707 Thin film transistor array substrate, method for manufacturing the same and system for inspecting the substrate
02/25/2010US20100044706 Methods of forming a layer of material on a substrate and structures formed therefrom
02/25/2010US20100044705 Doped substrate to be heated
02/25/2010US20100044704 Vertical thermoelectric structures
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