Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2010
03/04/2010US20100052100 Deep trench electrostatic discharge (esd) protect diode for silicon-on-insulator (soi) devices
03/04/2010US20100052099 Capacitor device and method for manufacturing the same
03/04/2010US20100052098 Semiconductor device having storage electrode and manufacturing method thereof
03/04/2010US20100052097 Capacitor of semiconductor device and method for forming the same
03/04/2010US20100052096 Stacked-chip device
03/04/2010US20100052095 Inductor for semiconductor device and method of fabricating the same
03/04/2010US20100052094 Semiconductor device with isolation trench liner, and related fabrication methods
03/04/2010US20100052093 Semiconductor substrate and method of manufacturing the same
03/04/2010US20100052091 Semiconductor device and fabrication method of the same
03/04/2010US20100052090 Semiconductor device and method of manufacturing the same
03/04/2010US20100052086 Electronic device packages and methods of fabricating electronic device packages
03/04/2010US20100052082 Micro-electro-mechanical systems (mems) package and method for forming the mems package
03/04/2010US20100052081 A sealing structure and method of manufacturing the same
03/04/2010US20100052079 Semiconductor devices and fabrication process thereof
03/04/2010US20100052078 Multi-Layer Gate Dielectric
03/04/2010US20100052077 High-k metal gate structure including buffer layer
03/04/2010US20100052076 Method of fabricating high-k poly gate device
03/04/2010US20100052075 Integrating a first contact structure in a gate last process
03/04/2010US20100052066 structure and method for a cmos device with doped conducting metal oxide as the gate electrode
03/04/2010US20100052063 Method to improve dielectric quality in high-k metal gate technology
03/04/2010US20100052059 Finfet process compatible native transistor
03/04/2010US20100052057 High voltage device with reduced leakage
03/04/2010US20100052056 Electrostatic discharge protection device
03/04/2010US20100052054 Method of manufacturing semiconductor device
03/04/2010US20100052053 Soi body contact using e-dram technology
03/04/2010US20100052052 Integrated Circuit with a Laterally Diffused Metal Oxide Semiconductor Device and Method of Forming the Same
03/04/2010US20100052048 Semiconductor device and method of manufacturing the same
03/04/2010US20100052047 Semiconductor device and method for the production of a semiconductor device
03/04/2010US20100052046 Semiconductor structures formed on substrates and methods of manufacturing the same
03/04/2010US20100052045 Semiconductor device and manufacturing method of the same
03/04/2010US20100052044 Semiconductor device with a trench gate structure and method for the production thereof
03/04/2010US20100052043 High density flash memory device and fabricating method thereof
03/04/2010US20100052042 Semiconductor memory device and manufacturing method thereof
03/04/2010US20100052041 Nonvolatile Memory Devices Having Charge-Trap Layers Therein with Relatively High Election Affinity
03/04/2010US20100052040 Method for forming silicon nitride film, method for manufacturing nonvolatile semiconductor memory device, nonvolatile semiconductor memory device and plasma apparatus
03/04/2010US20100052039 Semiconductor device and method for manufacturing the same
03/04/2010US20100052038 Semiconductor device and method for manufacturing thereof
03/04/2010US20100052037 Charge-trapping engineered flash non-volatile memory
03/04/2010US20100052036 Memory device and manufacturing method thereof, and semiconductor device
03/04/2010US20100052035 Nonvolatile semiconductor memory apparatus
03/04/2010US20100052034 Flash memory gate structure for widened lithography window
03/04/2010US20100052033 Lanthanide yttrium aluminum oxide dielectric films
03/04/2010US20100052032 Nonvolatile semiconductor memory and method for fabricating the same
03/04/2010US20100052031 Memory device and method for fabricating the same
03/04/2010US20100052021 Semiconductor memory device
03/04/2010US20100052019 Semiconductor device and method for fabricating the same
03/04/2010US20100052018 Continuous metal semiconductor alloy via for interconnects
03/04/2010US20100052017 Semiconductor memory device and manufacturing method thereof
03/04/2010US20100052016 Semiconductor structure and method of manufacture of same
03/04/2010US20100052015 Semiconductor device
03/04/2010US20100052014 Semiconductor device and fabrication method for the same
03/04/2010US20100052013 Semiconductor device and method for manufacturing semiconductor device
03/04/2010US20100052012 Semiconductor device
03/04/2010US20100052011 Semiconductor device
03/04/2010US20100052002 Micro-reflectors on a substrate for high-density led array
03/04/2010US20100051964 Method for preparing a semiconductor ultrananocrystalline diamond film and a semiconductor ultrananocrystalline diamond film prepared therefrom
03/04/2010US20100051963 Power transistor
03/04/2010US20100051962 Compound semiconductor device and the fabricating method of the same
03/04/2010US20100051961 Epitaxial substrate, semiconductor device substrate, and hemt device
03/04/2010US20100051960 Device and process of forming device with pre-patterned trench and graphene-based device structure formed therein
03/04/2010US20100051959 Circuit board and display device
03/04/2010US20100051952 Thin film transistor substrate and method of manufacturing the same
03/04/2010US20100051950 Thin film transistor array substrate and method of fabricating thereof
03/04/2010US20100051949 Semiconductor device and method for manufacturing the same
03/04/2010US20100051948 Thin film transistor, electro-optic device, and electronic apparatus
03/04/2010US20100051947 Amorphous insulator film and thin-film transistor
03/04/2010US20100051945 Silicon wafer and method for producing the same
03/04/2010US20100051943 Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus
03/04/2010US20100051942 ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
03/04/2010US20100051940 Semiconductor device and method for manufacturing the semiconductor device
03/04/2010US20100051939 Nitride based semiconductor device and method of manufacturing the same
03/04/2010US20100051938 Amorphous oxide semiconductor and thin film transistor using the same
03/04/2010US20100051937 Thin-film transistor and method of manufacturing same
03/04/2010US20100051936 Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
03/04/2010US20100051934 Thin film transistor array panel and method of manufacturing the same
03/04/2010US20100051933 Thin film transistor array substrate and method of fabricating the same
03/04/2010US20100051932 Nanostructure and uses thereof
03/04/2010US20100051931 Semiconductor apparatus and process for fabricating the same
03/04/2010US20100051930 Light emitting transistor
03/04/2010US20100051922 Organic Thin Film Transistors
03/04/2010US20100051916 Method for forming an electronic device in multi-layer structure
03/04/2010US20100051907 Devices including graphene layers epitaxially grown on single crystal substrates
03/04/2010US20100051905 Moisture detector, biological body moisture detector, natural product moisture detector, and product/material moisture detector
03/04/2010US20100051904 Dual-Level Self-Assembled Patterning Method and Apparatus Fabricated Using the Method
03/04/2010US20100051903 Method of aligning nanorods and related compositions
03/04/2010US20100051899 Method of manufacturing nanowire, method of manufacturing a semiconductor apparatus including nanowire and semiconductor apparatus formed from the same
03/04/2010US20100051897 Device and process of forming device with device structure formed in trench and graphene layer formed thereover
03/04/2010US20100051891 Electronic element including ferroelectric substance film and method of manufacturing the same
03/04/2010DE10317627B4 Verfahren zur Herstellung eines Matrixsubstrats für eine Flüssigkristallanzeigevorrichtung A process for producing an array substrate for a liquid crystal display device
03/04/2010DE102009019234A1 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
03/04/2010DE102008057066A1 Wieder konfigurierbare Halbleitervorrichtung Reconfigurable semiconductor device
03/04/2010DE102008045037A1 Statischer RAM-Zellenaufbau und Mehrfachkontaktschema zum Anschluss von Doppelkanaltransistoren Static RAM cell structure and multiple contact schema for connection of dual channel transistors
03/04/2010DE102008039743A1 Light-activated thyristor for e.g. switching of load, has ignition stage including conductor structure with conductor segments, which are distanced from each other and electrically contact n-doped ignition stage emitter and P-doped base
03/04/2010DE102008039742A1 Thyristor for use in circuit configuration, has semiconductor body, where ignition stage area with ignition stages and main cathode area are arranged between ignition area and lateral edge of semiconductor body
03/04/2010DE102008038342A1 Halbleiterbauelement mit Randbereich Semiconductor component with the edge area
03/04/2010DE102008038300A1 Semiconductor component, has field isolation region whose thickness increases from thickness of gate isolation area towards one of source or drain, where increased thickness is adjusted towards oxidation field thickness
03/04/2010DE102008011813B4 Halbleiterbauelement mit einem Metallgatestapel mit reduzierter Höhe und Verfahren zur Herstellung des Bauelements A semiconductor device having a metal gate stack with reduced height and method for manufacturing the component
03/04/2010DE102006025959B4 Leistungshalbleiteranordnung mit vorderseitig aufgelötetem Clip und Verfahren zur Herstellung einer solchen A power semiconductor device with the front side brazed clip and method of making such a
03/04/2010DE102004062861B4 Verfahren zur Herstellung eines nichtflüchtigen Speichers A method for producing a non-volatile memory
03/03/2010EP2159845A1 Oxide semiconductor device and method for manufacturing the same
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