Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2010
03/23/2010US7683398 Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof
03/23/2010US7683394 Optical semiconductor device and method for manufacturing optical semiconductor device
03/23/2010US7683390 Semiconductor device
03/23/2010US7683389 Nitride-based semiconductor light emitting diode
03/23/2010US7683387 Thin film transistor substrate having electrode layers that are formed on insulating layer to cover common voltage line and grounding line
03/23/2010US7683386 Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth
03/23/2010US7683383 Light emitting device having circuit protection unit
03/23/2010US7683381 Semiconductor light-emitting device
03/23/2010US7683380 High light efficiency solid-state light emitting structure and methods to manufacturing the same
03/23/2010US7683374 Silicon based photodetector
03/23/2010US7683372 Semiconductor apparatus and method for manufacturing the same
03/23/2010US7683364 Gated quantum resonant tunneling diode using CMOS transistor with modified pocket and LDD implants
03/23/2010US7683360 Horizontal chalcogenide element defined by a pad for use in solid-state memories
03/23/2010US7683359 Structured silicon anode
03/23/2010US7683306 Dual conversion gain gate and capacitor combination
03/23/2010US7682991 Method of manufacturing silicon carbide semiconductor device
03/23/2010US7682990 Method of manufacturing nonvolatile semiconductor memory device
03/23/2010US7682949 Laser treatment device, laser treatment method, and semiconductor device fabrication method
03/23/2010US7682943 Nanostructures and methods for manufacturing the same
03/23/2010US7682939 Method for the preparation of group IB-IIIA-VIA quaternary or higher alloy semiconductor films
03/23/2010US7682919 Semiconductor process and PMOS varactor
03/23/2010US7682918 ESD protection for semiconductor products
03/23/2010US7682916 Field effect transistor structure with abrupt source/drain junctions
03/23/2010US7682891 Tunable gate electrode work function material for transistor applications
03/23/2010US7682889 Trench field effect transistor and method of making it
03/23/2010US7682867 Organic thin-film transistor and manufacturing method thereof
03/23/2010US7682866 Non-planarized, self-aligned, non-volatile phase-change memory array and method of formation
03/23/2010US7682865 Superlattice photodiodes with polyimide surface passivation
03/23/2010US7682856 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
03/23/2010US7682851 Organic light emitting display and manufacturing method thereof
03/23/2010US7682846 Single and double-gate pseudo-FET devices for semiconductor materials evaluation
03/23/2010US7682551 Method for manufacturing three-dimensional photonic structure
03/18/2010WO2010030699A1 Phosphor layer arrangement for use with light emitting diodes
03/18/2010WO2010029885A1 Semiconductor device and manufacturing method thereof
03/18/2010WO2010029866A1 Display device
03/18/2010WO2010029865A1 Display device
03/18/2010WO2010029859A1 Semiconductor device and method for manufacturing the same
03/18/2010WO2010029776A1 Silicon carbide semiconductor device and process for producing the silicon carbide semiconductor device
03/18/2010WO2010029681A1 Semiconductor device and method for manufacturing the same
03/18/2010WO2010029672A1 Semiconductor device having electrostatic discharge protection circuit
03/18/2010WO2010029618A1 Memory device, method for manufacturing memory device, and method for writing data
03/18/2010WO2010006107A3 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
03/18/2010WO2010002803A3 Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
03/18/2010WO2009155157A3 Methods of forming buffer layer architecture on silicon and structures formed thereby
03/18/2010WO2009154935A3 Diodes, and methods of forming diodes
03/18/2010US20100068860 Semiconductor device and method of manufacture thereof
03/18/2010US20100068852 Method of Manufacturing A Semiconductor Device
03/18/2010US20100068551 Mechanical design of laminar weak-link mechanisms with centimeter-level travel range and sub-nanometer positioning resolution
03/18/2010US20100067310 Mos transistor with a settable threshold
03/18/2010US20100067304 Write once read only memory employing charge trapping in insulators
03/18/2010US20100067301 Columnar non-volatile memory devices with auxiliary transistors and methods of operating the same
03/18/2010US20100066969 Display apparatus and method of fabricating the same
03/18/2010US20100066955 Substrate for use in a liquid crystal display and liquid crystal display using the same
03/18/2010US20100066451 Compound semiconductor device and doherty amplifier using compound semiconductor device
03/18/2010US20100066441 MOS with reverse current limiting function and a voltage conversion circuit using the same
03/18/2010US20100066440 Transistor with a passive gate and methods of fabricating the same
03/18/2010US20100066348 Apparatus and method for molecule detection using nanopores
03/18/2010US20100065951 Method of Manufacturing A Semiconductor Device
03/18/2010US20100065946 Bonded Wafer Substrate for Use in MEMS Structures
03/18/2010US20100065945 Semiconductor device and manufacturing method thereof
03/18/2010US20100065944 Semiconductor device with decoupling capacitor design
03/18/2010US20100065942 Semiconductor Device and Method of Forming High-Frequency Circuit Structure and Method Thereof
03/18/2010US20100065941 Intermediate semiconductor structures
03/18/2010US20100065940 3-d integrated circuit system and method
03/18/2010US20100065935 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM
03/18/2010US20100065934 Transducer
03/18/2010US20100065933 Semiconductor strain gauge and the manufacturing method
03/18/2010US20100065932 Mems device, mems device module and acoustic transducer
03/18/2010US20100065931 Micro-electromechanical system microphone structure and method of fabricating the same
03/18/2010US20100065930 Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor
03/18/2010US20100065929 Semiconductor device
03/18/2010US20100065928 Semiconductor device and manufacturing method of semiconductor device
03/18/2010US20100065927 Semiconductor device and fabrication method of the same
03/18/2010US20100065926 Photoresist etch back method for gate last process
03/18/2010US20100065925 Local charge and work function engineering on mosfet
03/18/2010US20100065924 Ultra-Shallow Junctions using Atomic-Layer Doping
03/18/2010US20100065922 Semiconductor Devices and Methods of Manufacture Thereof
03/18/2010US20100065921 Semiconductor device with local interconnects
03/18/2010US20100065914 Method of forming a single metal that performs n and p work functions in high-k/metal gate devices
03/18/2010US20100065909 Semiconductor device and method for making the same
03/18/2010US20100065908 Alignment of trench for mos
03/18/2010US20100065907 Fin fet and method of fabricating same
03/18/2010US20100065906 System for vertical dmos with slots
03/18/2010US20100065905 Structures and Methods for Reducing Dopant Out-diffusion from Implant Regions in Power Devices
03/18/2010US20100065904 High density trench field effect transistor
03/18/2010US20100065901 Electrically programmable and erasable memory device and method of fabrication thereof
03/18/2010US20100065900 Semiconductor device including resistance element
03/18/2010US20100065899 Semiconductor devices including auxiliary gate electrodes and methods of fabricating the same
03/18/2010US20100065895 Method for producing at least one porous layer
03/18/2010US20100065894 Semiconductor Device Having a Field Effect Source/Drain Region
03/18/2010US20100065893 Semiconductor memory structure with stress regions
03/18/2010US20100065892 Bio-sensor and method of manufacturing the same
03/18/2010US20100065890 Semiconductor Substrate of GaAs and Semiconductor Device
03/18/2010US20100065889 Porous device for optical and electronic applications and method of fabricating the porous device
03/18/2010US20100065888 High mobility tri-gate devices and methods of fabrication
03/18/2010US20100065887 Field effect transistor source or drain with a multi-facet surface
03/18/2010US20100065886 Semiconductor device and manufacturing method thereof
03/18/2010US20100065884 Electrostatic Discharge Diode
03/18/2010US20100065865 Method of forming nitride semiconductor and electronic device comprising the same
03/18/2010US20100065858 Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same
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