Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
03/2010
03/18/2010US20100065857 Silicon carbide semiconductor device and method of manufacturing the same
03/18/2010US20100065856 Semiconductor package with integrated passives and method for fabricating same
03/18/2010US20100065854 Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy
03/18/2010US20100065853 Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
03/18/2010US20100065851 Semiconductor device, and its manufacturing method
03/18/2010US20100065845 Organic electroluminescence display device
03/18/2010US20100065844 Thin film transistor and method of manufacturing thin film transistor
03/18/2010US20100065842 Semiconductor device and manufacturing method thereof
03/18/2010US20100065841 Thin film transistor array substrate and method of manufacturing the same
03/18/2010US20100065838 Semiconductor device and method for manufacturing the same
03/18/2010US20100065837 Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
03/18/2010US20100065836 Resistive memory device and method of fabricating the same
03/18/2010US20100065835 Thin film transistor having crystalline indium oxide semiconductor film
03/18/2010US20100065824 Method for reducing fermi-level-pinning in a non-silicon channel mos device
03/18/2010US20100065823 Gated resonant tunneling diode
03/18/2010US20100065822 Lipid nanotube or nanowire sensor
03/18/2010US20100065821 Molecular quantum interference device
03/18/2010US20100065820 Nanotube Device Having Nanotubes with Multiple Characteristics
03/18/2010US20100065819 Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same
03/18/2010US20100065818 Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby
03/18/2010US20100065817 Memory device and method of fabricating the same
03/18/2010US20100065815 Semiconductor structure including mixed rare earth oxide formed on silicon
03/18/2010US20100065810 Method Of Synthesizing Semiconductor Nanostructures And Nanostructures Synthesized By The Method
03/18/2010US20100065809 Nanowire comprising silicon rich oxide and method for producing the same
03/18/2010US20100064808 Acceleration sensor and method of manufacturing acceleration sensor
03/18/2010DE10358458B4 Brennstoffzellenstapel und Verfahren zum Herstellen eines Brennstoffzellenstapels A fuel cell stack and method of manufacturing a fuel cell stack
03/18/2010DE10228793B4 Elektronisches Bauelement, welches aufgestapelte Mikrochips enthält Electronic component containing stacked microchips
03/18/2010DE102008046388A1 Vertical bipolar transistor has collecting region and collector connecting trench for fixing collecting region, where collector connecting trench is filled with electrically conductive filling material
03/18/2010DE102007007261B4 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
03/18/2010DE10131705B4 Verfahren zur Herstellung eines DMOS-Transistors A process for the preparation of a DMOS transistor
03/17/2010EP2164094A1 A method for reducing fermi-level-pinning in a non-silicon channel mos device
03/17/2010EP2162920A1 Inverter manufacturing method and inverter
03/17/2010EP2162919A1 Method of forming nanotube vertical field effect transistor
03/17/2010EP2162484A1 Diamine compound, polyamic acid, soluble polyimide, composition, wettability changing film, electrode, and method of manufacturing a wettability changing film
03/17/2010EP1807913B1 Semiconductor device with tunable energy band gap
03/17/2010EP1644988B1 High-density finfet integration scheme
03/17/2010EP1532689B1 Non-volatile semiconductor memory element and corresponding production and operation method
03/17/2010CN201425942Y Thin-film transistor structure
03/17/2010CN201425941Y Diode chip integrated with MOS process structure
03/17/2010CN101675526A Method of forming a transistor having multiple types of schottky junctions
03/17/2010CN101675525A Semiconductor device
03/17/2010CN101675516A Chips having rear contacts connected by through vias to front contacts
03/17/2010CN101675506A Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
03/17/2010CN101675502A Nonvolatile memory cell comprising a nanowire and manufacturing method thereof
03/17/2010CN101674521A Production process of electroacoustic component
03/17/2010CN101674507A Electroacoustic component
03/17/2010CN101673772A Erasable metal-insulator-silicon capacitor structure
03/17/2010CN101673771A Capacitative element
03/17/2010CN101673770A Thin film field-effect transistor and display using the same
03/17/2010CN101673769A Semiconductor element, semiconductor device and methods for manufacturing thereof
03/17/2010CN101673768A Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
03/17/2010CN101673767A Semiconductor device with increased channel area and method for manufacturing the same
03/17/2010CN101673766A (110)-oriented p-channel trench mosfet having high-K gate dielectric
03/17/2010CN101673765A Semiconductor device and manufacturing method thereof
03/17/2010CN101673764A Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method
03/17/2010CN101673763A Ldmos transistor and preparation method thereof
03/17/2010CN101673762A LDMOS transistor structure and preparation method
03/17/2010CN101673761A Semiconductor device and semiconductor subassembly
03/17/2010CN101673755A Phase change memory cell utilizing composite structure diode and preparation method thereof
03/17/2010CN101673753A Piezoelectric transistor and method of manufacturing same
03/17/2010CN101673745A Semiconductor device
03/17/2010CN101673744A Transistor structure, dynamic random access memory structure and manufacturing method thereof
03/17/2010CN101673743A Semiconductor device
03/17/2010CN101673741A Semiconductor device and manufacturing method thereof
03/17/2010CN101673739A Semiconductor device and method of manufacturing the same
03/17/2010CN101673734A Capacitor structure
03/17/2010CN101673684A Method for manufacturing electro-static discharge protection diodes in high-voltage process
03/17/2010CN101673673A Method for forming epitaxial wafer and epitaxial wafer formed by using same
03/17/2010CN101673619A Columnar capacitor, stacking-type coaxial columnar capacitor and preparation method thereof
03/17/2010CN101673049A Gray tone mask and method for manufacturing gray tone mask
03/17/2010CN100594618C Semiconductor device and method for manufacturing the same
03/17/2010CN100594617C 场效应晶体管 FET
03/17/2010CN100594616C Semiconductor device including bipolar junction transistor with protected emitter-base junction
03/17/2010CN100594615C Semiconductor device having asymmetric bulb-type recess gate and method for manufacturing the same
03/17/2010CN100594600C Complementary metal-oxide-semiconductor transistor and manufacturing method thereof
03/17/2010CN100594599C Integrating N-type and P-type metal gate transistors
03/17/2010CN100594593C Semiconductor device and method for fabricating the same
03/17/2010CN100594590C Schottky diode and method of manufacture
03/17/2010CN100594586C Method for production of thin-film semiconductor device
03/17/2010CN100594582C Method for forming quantum point
03/17/2010CN100594409C Array base plate for liquid crystal display device and producing method thereof
03/17/2010CN100594408C Liquid crystal display device array substrate and its production method
03/17/2010CN100594407C Array substrate, manufacturing method thereof and display device having the same
03/16/2010US7681163 Capacitor layout technique for reduction of fixed pattern noise in a CMOS sensor
03/16/2010US7679871 Semiconductor device and method for determining fuse state
03/16/2010US7679672 Electronic flash, imaging device and method for producing a flash of light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
03/16/2010US7679668 Solid state image pickup device and its manufacture
03/16/2010US7679667 Solid-state image sensor using junction gate type field-effect transistor as pixel
03/16/2010US7679663 Photodetection apparatus
03/16/2010US7679427 Semiconductor device including a bias voltage generator
03/16/2010US7679198 Circuit and method for interconnecting stacked integrated circuit dies
03/16/2010US7679196 Stacked mounting structure
03/16/2010US7679194 Method of fabricating semiconductor memory device and semiconductor memory device driver
03/16/2010US7679187 Bonding pad structure for back illuminated optoelectronic device and fabricating method thereof
03/16/2010US7679185 ductile layer absorbs stress between flange and semiconductor device mounted on flange and can substantially reduce stress applied to semiconductor device; provides combination of copper flange and polymeric dielectric with TCE close to copper which results in low stress structure of improved reliability
03/16/2010US7679182 Power module and motor integrated control unit
03/16/2010US7679166 Localized temperature control during rapid thermal anneal
03/16/2010US7679165 High brightness light emitting diode with a bidirectionally angled substrate
03/16/2010US7679163 Phase-change memory element
03/16/2010US7679162 Integrated current sensor package
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