Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2010
10/12/2010US7812338 Semiconductor light emitting device
10/12/2010US7812336 Levitating substrate being charged by a non-volatile device and powered by a charged capacitor or bonding wire
10/12/2010US7812333 Integrated circuit including resistivity changing material having a planarized surface
10/12/2010US7812283 Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
10/12/2010US7811907 Method for manufacturing semiconductor device and epitaxial growth equipment
10/12/2010US7811905 Nonvolatile memory device and fabrication method thereof
10/12/2010US7811851 Phase change memory structures
10/12/2010US7811850 Method of operating image sensor
10/12/2010US7811839 Semiconductor light emitting device and method for manufacturing the same
10/12/2010US7811837 Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same
10/12/2010US7810979 Illuminating device with primary color LED and fluorescent light sources, and liquid crystal display device
10/07/2010WO2010115137A1 Lateral diode and method of manufacturing the same
10/07/2010WO2010114600A1 All-electron battery having area-enhanced electrodes
10/07/2010WO2010114529A1 Thin-film transistor (tft) with a bi-layer channel
10/07/2010WO2010113931A1 Organic semiconductor ink composition and method for forming organic semiconductor pattern using same
10/07/2010WO2010113928A1 Method for forming silicon nitride film, method for manufacturing semiconductor memory device, and plasma cvd apparatus
10/07/2010WO2010113779A1 Semiconductor device
10/07/2010WO2010113715A1 Method of producing semiconductor device, and semiconductor device
10/07/2010WO2010113518A1 Field-effect transistor
10/07/2010WO2010113501A1 Semiconductor device
10/07/2010WO2010113384A1 Semiconductor device and manufacturing method therefor
10/07/2010WO2010113376A1 Flexible semiconductor device and method for manufacturing same
10/07/2010WO2010113229A1 Semiconductor device and method of producing same
10/07/2010WO2010113163A1 Vertical organic field effect transistor and method of its manufacture
10/07/2010WO2010112585A1 Self-contained integrated circuit having transistors with separate threshold voltages
10/07/2010WO2010078054A3 Tunnel field effect transistor and method of manufacturing same
10/07/2010WO2010051133A3 Semiconductor devices having faceted silicide contacts, and related fabrication methods
10/07/2010WO2010046881A3 Method of manufacturing a mos transistor
10/07/2010US20100254186 Methods, devices, and systems relating to memory cells having a floating body
10/07/2010US20100254182 Magnetic storage device
10/07/2010US20100253822 Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus
10/07/2010US20100253312 Combined semiconductor rectifying device and the electric power converter using the same
10/07/2010US20100252927 Pattern-Print Thin-Film Transistors with Top Gate Geometry
10/07/2010US20100252915 Microelectronic device wafers and methods of manufacturing
10/07/2010US20100252914 Optical semiconductor device with a concentration of residual silicon
10/07/2010US20100252913 Semiconductor device
10/07/2010US20100252912 Semiconductor device, and method of manufacturing the same
10/07/2010US20100252911 Semiconductor integrated circuit device
10/07/2010US20100252910 Semiconductor device and method of manufacturing the same
10/07/2010US20100252909 Three-Dimensional Memory Devices
10/07/2010US20100252905 Locos nitride capping of deep trench polysilicon fill
10/07/2010US20100252904 Semiconductor device and method for fabricating the same
10/07/2010US20100252901 Ferroelectric thin films
10/07/2010US20100252899 Package interface plate for package isolation structures
10/07/2010US20100252898 Semiconductor device and method of manufacturing the same
10/07/2010US20100252897 Performance-enhancing two-sided mems anchor design for vertically integrated micromachined devices
10/07/2010US20100252887 Damage Implantation of a Cap Layer
10/07/2010US20100252884 Semiconductor device
10/07/2010US20100252882 MOS Transistor with Gate Trench Adjacent to Drain Extension Field Insulation
10/07/2010US20100252881 Cmos diodes with dual gate conductors, and methods for forming the same
10/07/2010US20100252880 Method of manufacturing a semiconductor device, and a semiconductor device
10/07/2010US20100252879 Semiconductor device and method of forming the same
10/07/2010US20100252878 Non-volatile memory cell
10/07/2010US20100252877 Non-Volatile Semiconductor Memory Devices Having Charge Trap Layers Between Word Lines and Active Regions Thereof
10/07/2010US20100252876 Structure and method for forming an oscillating MOS transistor and nonvolatile memory
10/07/2010US20100252875 Structure and fabricating process of non-volatile memory
10/07/2010US20100252874 Memory Device
10/07/2010US20100252869 Semiconductor device and method of fabricating the same
10/07/2010US20100252868 Enhanced field effect transistor
10/07/2010US20100252866 Transistor having a channel with tensile strain and oriented along a crystallographic orientation with increased charge carrier mobility
10/07/2010US20100252864 Semiconductor device and manufacturing method for the same
10/07/2010US20100252863 Semiconductor device and manufacturing method for the same
10/07/2010US20100252862 Source/Drain Engineering of Devices with High-Mobility Channels
10/07/2010US20100252861 Devices Formed from a Non-Polar Plane of a Crystalline Material and Method of Making the Same
10/07/2010US20100252860 Lateral bipolar junction transistor with reduced base resistance
10/07/2010US20100252838 Semiconductor device and method of manufacturing the same
10/07/2010US20100252837 METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME
10/07/2010US20100252836 Group-iii nitride structure and method for producing a group-iii nitride structure
10/07/2010US20100252835 Nitride semiconductor and nitride semiconductor crystal growth method
10/07/2010US20100252834 Method for growing group iii-v nitride film and structure thereof
10/07/2010US20100252832 Semiconductor device and method for manufacturing the same
10/07/2010US20100252831 Square pillar-shaped switching element for memory device and method of manufacturing the same
10/07/2010US20100252829 Semiconductor device, circuit substrate, electro-optic device and electronic apparatus
10/07/2010US20100252827 Semiconductor device and method for manufacturing the same
10/07/2010US20100252826 Display device and method for manufacturing the same
10/07/2010US20100252816 High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio
10/07/2010US20100252815 Structurally stabilized semiconductor nanowire
10/07/2010US20100252814 Semiconductor nanowires having mobility-optimized orientations
10/07/2010US20100252813 Core-Shell-Shell Nanowire Transistor And Fabrication Method
10/07/2010US20100252811 Nitride semiconductor device
10/07/2010US20100252810 providing patterned gate conductor atop semiconductor nanowires that are surrounded by gate dielectric, wherein residue gate material is present beneath semiconductor nanowires, forming protective material on exposed sidewalls, selectively removing residue gate material via isotropic etching; lithography
10/07/2010US20100252808 Nanowire growth on dissimilar material
10/07/2010US20100252805 GaN Nanorod Arrays Formed by Ion Beam Implantation
10/07/2010US20100252804 Cathode assembly containing an ultraviolet light-blocking dielectric layer
10/07/2010US20100252803 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same
10/07/2010US20100252802 Semiconductor element
10/07/2010US20100252801 Semiconductor nanowire with built-in stress
10/07/2010US20100252800 Nanowire devices for enhancing mobility through stress engineering
10/07/2010US20100252799 Apparatus of memory array using finfets
10/07/2010US20100252434 Bio-Sensor Using Gated Electrokinetic Transport
10/07/2010DE102010016000A1 Halbleitervorrichtungen und Verfahren zum Herstellen einer Halbleitervorrichtung Semiconductor devices and the method of manufacturing a semiconductor device
10/07/2010DE102010002798A1 Siliziumkarbid-Halbleitervorrichtung mit Schottky-Sperrschichtdiode und Verfahren zu deren Fertigung Silicon carbide semiconductor device with Schottky-barrier diode and methods for their production
10/07/2010DE102009041502A1 Halbleiterdrucksensor und Herstellungsverfahren dafür A semiconductor pressure sensor and production method thereof
10/07/2010DE102009015569A1 Optoelektronischer Halbleiterchip The optoelectronic semiconductor chip
10/07/2010DE102009002100A1 Electrical component e.g. press-fit diode, for motor vehicle generator system, has stress-reducing material reducing effect of expansion-or upsetting force on semiconductor substrate by compound layer
10/07/2010DE102007010884B4 Verfahren zur Herstellung einer Halbleiterbauelementanordnung mit einem Trench-Transistor und Halbleiterbauelementanordnung mit einem Trench-Transistor A method of manufacturing a semiconductor device assembly comprising a trench transistor and semiconductor device assembly comprising a trench transistor
10/07/2010DE10163429B4 HF-Schaltungschip und Herstellungsverfahren davon RF circuit die and production method thereof
10/07/2010CA2750282A1 Method and structure for threshold voltage control and drive current improvement for high-k metal gate transistors
10/06/2010EP2237414A2 Amplifier circuit of capacitor microphone
10/06/2010EP2237320A1 Metal electrode and semiconductor element using the same
1 ... 650 651 652 653 654 655 656 657 658 659 660 661 662 663 664 665 666 667 668 669 670 ... 2182