Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2010
10/14/2010US20100258914 Surface mountable semiconductor bridge die
10/14/2010US20100258913 Patterning method and integrated circuit structure
10/14/2010US20100258912 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
10/14/2010US20100258911 Nitride semiconductor substrate
10/14/2010US20100258910 Lateral junction varactor with large tuning range
10/14/2010US20100258908 Isolation of mim fin dram capacitor
10/14/2010US20100258907 Semiconductor device and method of manufacturing the same
10/14/2010US20100258906 Capacitor of semiconductor device and method of fabricating the same
10/14/2010US20100258899 Schottky diode device with an extended guard ring and fabrication method thereof
10/14/2010US20100258898 Process for fabricating an electronic device
10/14/2010US20100258897 Trench junction barrier controlled Schottky
10/14/2010US20100258889 High performance MTJ elements for STT-RAM and method for making the same
10/14/2010US20100258888 High performance MTJ element for STT-RAM and method for making the same
10/14/2010US20100258887 Magnetic Tunnel Junction (MTJ) and Methods, and Magnetic Random Access Memory (MRAM) Employing Same
10/14/2010US20100258886 Spin torque transfer magnetic tunnel junction structure
10/14/2010US20100258885 Mems structure preventing stiction
10/14/2010US20100258884 Method for attaching a first carrier device to a second carrier device and micromechanical components
10/14/2010US20100258883 Metal-Ceramic Multilayer Structure
10/14/2010US20100258882 Front end micro cavity
10/14/2010US20100258881 Dual metal and dual dielectric integration for metal high-k fets
10/14/2010US20100258876 Semiconductor device and a method of manufacturing the same
10/14/2010US20100258874 Semiconductor device
10/14/2010US20100258872 Semiconductor device
10/14/2010US20100258871 Semiconductor device and method of manufacturing the same
10/14/2010US20100258870 Finfets and methods for forming the same
10/14/2010US20100258868 Integrated circuit system with a floating dielectric region and method of manufacture thereof
10/14/2010US20100258867 Semiconductor device
10/14/2010US20100258866 Method for Forming Shielded Gate Trench FET with Multiple Channels
10/14/2010US20100258865 Transistor having recess channel and fabricating method thereof
10/14/2010US20100258864 Method of Forming a FET Having Ultra-low On-resistance and Low Gate Charge
10/14/2010US20100258863 Semiconductor device and method of manufacturing the same
10/14/2010US20100258862 Trench-gate field effect transistor with channel enhancement region and methods of forming the same
10/14/2010US20100258861 Semiconductor device with recess gate and method for fabricating the same
10/14/2010US20100258860 Semiconductor device including protrusion type isolation layer
10/14/2010US20100258859 Method for fabricating semiconductor device having low contact resistance
10/14/2010US20100258858 Method of fabricating semiconductor device
10/14/2010US20100258857 Method of Forming a Layer Comprising Epitaxial Silicon, and a Field Effect Transistor
10/14/2010US20100258856 Mosfet structure with guard ring
10/14/2010US20100258855 Field Effect Transistor with Self-aligned Source and Heavy Body Regions and Method of Manufacturing Same
10/14/2010US20100258853 Trench semiconductor device and method of making the same
10/14/2010US20100258852 Non-volatile memory device and method for fabricating the same
10/14/2010US20100258851 Nanocrystal memories and methods of forming the same
10/14/2010US20100258850 Semiconductor integrated device
10/14/2010US20100258849 Magnetic tunnel junction transistor
10/14/2010US20100258848 Compensated gate misfet and method for fabricating the same
10/14/2010US20100258846 Electronic device with controlled electrical field
10/14/2010US20100258845 Semiconductor device and method for manufacturing same
10/14/2010US20100258844 BUMPED, SELF-ISOLATED GaN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
10/14/2010US20100258843 ENHANCEMENT MODE GaN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME
10/14/2010US20100258842 Enhancement mode gallium nitride transistor with improved gate characteristics
10/14/2010US20100258841 Back diffusion suppression structures
10/14/2010US20100258840 Semiconductor device
10/14/2010US20100258824 Electrode structure and light-emitting device using the same
10/14/2010US20100258817 Silicon carbide semiconductor device and manufacturing method therefor
10/14/2010US20100258816 Silicon carbide semiconductor device and manufacturing method therefor
10/14/2010US20100258815 Silicon carbide semiconductor device and manufacturing method thereof
10/14/2010US20100258812 Group-iii nitride semiconductor freestanding substrate and manufacturing method of the same
10/14/2010US20100258811 Semiconductor Device and Method of Manufacturing the Same
10/14/2010US20100258810 Pixel unit and fabricating method thereof
10/14/2010US20100258809 Method of manufacturing localized semiconductor-on-insulator (soi) structures in a bulk semidonductor wafer
10/14/2010US20100258808 Thin film transistor and manufacturing method thereof
10/14/2010US20100258806 Electronic device, method of producing the same, and display device
10/14/2010US20100258805 Thin Film Transistor and Image Display Unit
10/14/2010US20100258803 Thin film active element group, thin film active element array, organic light emitting device, display apparatus, and thin film active element manufacturing method
10/14/2010US20100258802 Semiconductor Device and Method for Manufacturing the Same
10/14/2010US20100258801 Semiconductor component including a lateral transistor component
10/14/2010US20100258800 Semiconductor stacking layer and fabricating method thereof
10/14/2010US20100258799 Bipolar transistor and method of manufacturing the same
10/14/2010US20100258796 Zinc oxide based semiconductor device and method of manufacturing the same
10/14/2010US20100258795 Zinc oxide based semiconductor device and method of manufacturing the same
10/14/2010US20100258794 Field effect transistor
10/14/2010US20100258793 Solution composition for forming oxide thin film and electronic device including the oxide thin film
10/14/2010US20100258787 Field effect transistor having graphene channel layer
10/14/2010US20100258785 Superlattice nanopatterning of wires and complex patterns
10/14/2010US20100258784 Method Of Efficient Coupling Of Light From Single-Photon Emitter To Guided Radiation Localized To Sub-Wavelength Dimensions On Conducting Nanowires
10/14/2010US20100258166 Glass compositions used in conductors for photovoltaic cells
10/14/2010US20100258165 Glass compositions used in conductors for photovoltaic cells
10/14/2010DE112008002337T5 P-Kanal-Ge-Transistorstruktur mit hoher Löchermobilität auf SI-Substrat P-channel transistor structure with high Ge hole mobility on Si substrate
10/14/2010DE10297583B4 Verfahren zum Herstellen eines Soi-Bauteils mit unterschiedlichen Siliziumdicken A method for producing an SOI component with different thicknesses of silicon
10/14/2010DE10261404B4 Verfahren zum Herstellen eines Halbleiterbauelements A method of manufacturing a semiconductor device
10/14/2010DE10226236B4 Verfahren zur Ausbildung einer einzelnen Verdrahtungsebene für Transistoren mit planaren und vertikalen Gates auf dem gleichen Substrat sowie Speicherzellenanordnung A method of forming a single wiring layer for transistors with planar and vertical gates on the same substrate, and memory cell array
10/14/2010DE102010011258A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
10/14/2010DE102010004230A1 Integrated circuit for use in e.g. electronic system, has interface-structures directly connected to doped area in respective partial areas of contact surface, where structures are made from respective conducting materials
10/14/2010DE102010000113A1 Halbleiterbauelement und Verfahren zur Herstellung A semiconductor device and method for producing
10/14/2010DE102009015715A1 Bewahren der Integrität eines Gatestapels mit großem ε durch einen Versatzabstandshalter, der zum Bestimmen eines Abstandes einer verformungsinduzierenden Halbleiterlegierung verwendet wird Preserve the integrity of a gate stack with large ε offset by a spacer that is used for determining a distance of a strain-inducing semiconductor alloy
10/14/2010DE102008049717B4 Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit einem Metallgatestapel mit großem ε und einem kompressiv verspannten Kanal A process for producing a semiconductor device as a transistor with a metal gate stack with large ε and a compressively strained channel
10/14/2010DE102008012678B4 Verfahren zum Bilden einer metallischen Elektrode und die metallische Elektrode aufweisende Halbleitervorrichtung A method of forming a metallic electrode and the metal electrode semiconductor device having
10/14/2010CA2757921A1 Mixed metal oxides
10/14/2010CA2739576A1 Insulated gate field effect transistor
10/14/2010CA2739570A1 Insulated gate bipolar transistor
10/13/2010EP2239794A2 Nanoscopic wire-based devices, arrays, and methods of their manufacture
10/13/2010EP2239781A1 Variable barrier tunnel transistor
10/13/2010EP2239774A1 High-power semiconductor element with edge passivation and method for producing same
10/13/2010EP2238623A1 Double-gate floating-body memory device
10/13/2010EP2238616A1 Differential nitride pullback to create differential nfet to pfet divots for improved performance versus leakage
10/13/2010EP2238611A2 Edge-contacted vertical carbon nanotube transistor
10/13/2010EP1408863B1 Hermetic feedthrough for an implantable device
10/13/2010EP1390295B1 Nanotube array and method for producing a nanotube array
10/13/2010CN201608184U 一种具有改进型终端保护结构的沟槽型功率mos器件 Terminal protection structure having improved trench type power mos devices
10/13/2010CN201608183U 沟槽型大功率mos器件 Trench type power mos devices
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