Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2010
10/27/2010CN1992523B Switch circuit and diode
10/27/2010CN1950542B Yield improvement in silicon-germanium epitaxial growth
10/27/2010CN1870316B Organic thin film transistor (OTFT), its method of fabrication, and flat panel display including OTFT
10/27/2010CN1842909B Semiconductor device with nanoclusters
10/27/2010CN1841677B Schottky diode and method of manufacture
10/27/2010CN1655056B Optic mask and manufacturing method of thin film transistor array panel using the same
10/27/2010CN1581504B Cell structure for bipolar integrated circuits and method
10/27/2010CN101874295A Method for manufacturing flexible semiconductor device and multilayer film used therein
10/27/2010CN101874294A Semiconductor device manufacturing method, semiconductor device and display apparatus
10/27/2010CN101874289A Semiconductor device manufacturing method and semiconductor device
10/27/2010CN101872791A Schottky diode with improved high current behaviour and method for its production
10/27/2010CN101872790A Schottky diode element having epitaxial guard ring and manufacturing method thereof
10/27/2010CN101872789A High-power high-current density rectifier diode chip and fabrication method thereof
10/27/2010CN101872788A Integrated circuit 3D memory array and manufacturing method
10/27/2010CN101872787A 金属氧化物薄膜晶体管及其制备方法 Metal oxide thin film transistor and its preparation method
10/27/2010CN101872786A Silicon carbide high pressure N-type metal oxide transistor with floating buried layer and method
10/27/2010CN101872785A Silicon carbide high pressure P-type metal oxide transistor with floating buried layer and method
10/27/2010CN101872784A Three-sided silicified gate metallic oxide semiconductor field effect transistor and preparation method thereof
10/27/2010CN101872783A Vertical super-junction bilateral diffusion metal oxide semiconductor device and manufacture method
10/27/2010CN101872779A Image display system and manufacturing method thereof
10/27/2010CN101872767A Silicon nitride trap layer olive-shaped energy band gap structure and manufacturing method thereof of SONOS (Silicon Oxide Nitride Oxide Semiconductor) component
10/27/2010CN101872766A OTP (One Time Programmable) device and preparation method thereof
10/27/2010CN101872765A NMOS (N-channel Metal Oxide Semiconductor) one time programmable device and manufacture method thereof
10/27/2010CN101872763A LDMOS (Laterally Diffused Metal Oxide Semiconductor) device capable of reducing substrate current and manufacturing method thereof
10/27/2010CN101872737A MOS structure for inhibiting SOI floating-body effect and manufacturing method thereof
10/27/2010CN101872725A Manufacturing method of semiconductor structure and semiconductor element
10/27/2010CN101872723A Germanium tunnelling diode and preparation method thereof
10/27/2010CN101872023A PMOS dosimeter adopting annular grid structure
10/27/2010CN101870445A Circuit lead structure and micro-electromechanical system
10/27/2010CN101510560B P type transversal bilateral diffusion metal oxide semiconductor tube capable of reducing hot carrier effect
10/27/2010CN101442038B Capacitor and display device
10/27/2010CN101393934B Semiconductor device and method of manufacturing the same
10/27/2010CN101378085B Metal-insulator-metal capacitor and method for manufacturing the same
10/27/2010CN101369532B Structures of and methods of fabricating trench-gated mis devices
10/27/2010CN101317253B Method of fabricating self aligned schottky junctions for semiconductors devices
10/27/2010CN101300680B Replacement metal gate transistors with reduced gate oxide leakage
10/27/2010CN101263600B Method of manufacturing a semiconductor component, and semiconductor component formed thereby
10/27/2010CN101221988B Semiconductor structure with high breakdown voltage and high resistance, and its manufacturing method
10/27/2010CN101160663B 半导体器件 Semiconductor devices
10/27/2010CN101159270B Method of performing an operation on a flash memory cell device
10/27/2010CN101069286B Variable capacitor single-electron device
10/27/2010CN101022085B Semiconductor element and producing method thereof
10/27/2010CN101004519B Method of fabricating a semiconductor device
10/26/2010USRE41868 Semiconductor memory device
10/26/2010USRE41866 Semiconductor device and method of fabricating same
10/26/2010US7823114 Method of designing wiring structure of semiconductor device and wiring structure designed accordingly
10/26/2010US7822302 Circuit board and method for manufacturing the same
10/26/2010US7822090 Semiconductor device
10/26/2010US7821607 Liquid crystal display device
10/26/2010US7821200 EL display device, driving method thereof, and electronic equipment provided with the EL display device
10/26/2010US7821136 layer of metal composite is applied on substrate, comprising metal flakes, nanometer metal spheres, and metal precursors; precursors comprise mixture of inorganic salts and organic acidic salts; layer of metal composite is cured to induce exothermic reaction, forming a conductive layer at low temperature
10/26/2010US7821134 Semiconductor device, electronic device and fabrication method of the same
10/26/2010US7821133 Contact pad structure for flip chip semiconductor die
10/26/2010US7821124 Thin, thermally enhanced flip chip in a leaded molded package
10/26/2010US7821108 Systems and methods for lowering interconnect capacitance through adjustment of relative signal levels
10/26/2010US7821107 Die stacking with an annular via having a recessed socket
10/26/2010US7821106 Process for making contact with and housing integrated circuits
10/26/2010US7821105 Method of manufacturing semiconductor device and semiconductor device
10/26/2010US7821103 Counter-doped varactor structure and method
10/26/2010US7821102 Power transistor featuring a double-sided feed design and method of making the same
10/26/2010US7821101 Semiconductor device including capacitor including upper electrode covered with high density insulation film and production method thereof
10/26/2010US7821100 Semiconductor device and method for manufacturing the same
10/26/2010US7821099 Structure for low capacitance ESD robust diodes
10/26/2010US7821098 Trench widening without merging
10/26/2010US7821097 Lateral passive device having dual annular electrodes
10/26/2010US7821096 Semiconductor integrated circuit and system LSI including the same
10/26/2010US7821095 Method of forming a Schottky diode and structure therefor
10/26/2010US7821087 Spin transfer magnetic element having low saturation magnetization free layers
10/26/2010US7821086 Semiconductor memory device
10/26/2010US7821085 Physical quantity sensor and method for manufacturing the same
10/26/2010US7821084 Sensor system
10/26/2010US7821082 Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistor
10/26/2010US7821081 Method and apparatus for flatband voltage tuning of high-k field effect transistors
10/26/2010US7821078 Semiconductor device having resistor elements and method for manufacturing the same
10/26/2010US7821077 Semiconductor device
10/26/2010US7821076 Semiconductor device
10/26/2010US7821071 Semiconductor device and method for manufacturing the same
10/26/2010US7821065 Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
10/26/2010US7821064 Lateral MISFET and method for fabricating it
10/26/2010US7821063 Semiconductor device having enhanced performance and method
10/26/2010US7821060 Semiconductor device including trench gate transistor and method of forming the same
10/26/2010US7821059 Semiconductor device and method for manufacturing a semiconductor device
10/26/2010US7821058 Nonvolatile semiconductor memory and method for manufacturing the same
10/26/2010US7821057 Nonvolatile semiconductor memory device and manufacturing method thereof
10/26/2010US7821056 Nonvolatile semiconductor memory device and method of manufacturing the same
10/26/2010US7821055 Stressed semiconductor device and method for making
10/26/2010US7821054 Semiconductor device and semiconductor system
10/26/2010US7821053 Tunable capacitor
10/26/2010US7821050 CRAM transistors with high immunity to soft error
10/26/2010US7821048 Double density MRAM with planar processing
10/26/2010US7821045 Apparatus, system, and method for multiple-segment floating gate
10/26/2010US7821044 Transistor with improved tip profile and method of manufacture thereof
10/26/2010US7821043 Insulated gate bipolar transistor
10/26/2010US7821042 Imaging device including a multiplier electrode
10/26/2010US7821041 Electrical fuse circuit for security applications
10/26/2010US7821040 Thin film transistor substrate and fabricating method thereof
10/26/2010US7821039 Layout architecture for improving circuit performance
10/26/2010US7821033 Semiconductor component comprising a drift zone and a drift control zone
10/26/2010US7821031 Switch circuit, semiconductor device, and method of manufacturing said semiconductor device
10/26/2010US7821030 Semiconductor device and method for manufacturing the same
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