Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2010
10/21/2010US20100264469 Mosfet including epitaxial halo region
10/21/2010US20100264468 Method Of Fabrication Of A FinFET Element
10/21/2010US20100264467 Transistor component having a shielding structure
10/21/2010US20100264466 Gate self-aligned low noise jfet
10/21/2010US20100264465 SRAM Cell with Different Crystal Orientation than Associated Logic
10/21/2010US20100264463 Semiconductor heterostructure and method for forming same
10/21/2010US20100264462 Semiconductor including lateral hemt
10/21/2010US20100264461 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
10/21/2010US20100264460 Thick pseudomorphic nitride epitaxial layers
10/21/2010US20100264458 Method for manufacturing heterostructures
10/21/2010US20100264456 Capacitor Structure in Trench Structures of Semiconductor Devices and Semiconductor Devices Comprising Capacitor Structures of this Type and Methods for Fabricating the Same
10/21/2010US20100264455 Semiconductor device
10/21/2010US20100264452 Methods for high temperature processing of epitaxial chips
10/21/2010US20100264446 Semiconductor light emitting device
10/21/2010US20100264427 Bipolar Junction Transistor Guard Ring Structures and Method of Fabricating Thereof
10/21/2010US20100264426 Diamond capacitor battery
10/21/2010US20100264425 Transistors for replacing metal-oxide-semiconductor field-effect transistors in nanoelectronics
10/21/2010US20100264424 GaN LAYER CONTAINING MULTILAYER SUBSTRATE, PROCESS FOR PRODUCING SAME, AND DEVICE
10/21/2010US20100264423 Thinned Semiconductor Components Having Lasered Features And Methods For Fabricating Semiconductor Components Using Back Side Laser Processing
10/21/2010US20100264422 Thin film semiconductor device, display device using such thin film semiconductor device and manufacturing method thereof
10/21/2010US20100264421 Semiconductor device and fabrication method thereof
10/21/2010US20100264420 Semiconductor Device and Manufacturing Method Thereof
10/21/2010US20100264419 Field-effect transistor
10/21/2010US20100264418 Control substrate and control substrate manufacturing method
10/21/2010US20100264417 Thin-film treansistor array panel and method of fabricating the same
10/21/2010US20100264416 Semiconductor device and production method thereof
10/21/2010US20100264415 Interconnecting structure production method, and interconnecting structure
10/21/2010US20100264412 Semiconductor device and manufacturing method thereof
10/21/2010US20100264403 Nanorod thin-film transitors
10/21/2010US20100264399 Method of fabricating nanosized filamentary carbon devices over a relatively large-area
10/21/2010US20100264391 Epi substrate with low doped epi layer and high doped si substrate layer for media growth on epi and low contact resistance to back-side substrate
10/21/2010US20100263717 Low Temperature Junction Growth Using Hot-Wire Chemical Vapor Deposition
10/21/2010DE112008003488T5 Verfahren zum Herstellen eines Dünnschichttransistors und Dünnschichttransistor A method of fabricating a thin film transistor and the thin film transistor
10/21/2010DE102010003759A1 Laterales Halbleiterbauelement Lateral semiconductor component
10/21/2010DE102010003286A1 Verbindungshalbleitersubstrat Compound semiconductor substrate
10/21/2010DE102010000531A1 Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements A semiconductor device and method of manufacturing a semiconductor device
10/21/2010DE102009017732A1 Leistungshalbleiterbauelement mit einer Randpassivierung und Verfahren zu dessen Herstellung Power semiconductor component having an edge passivation and process for its preparation
10/21/2010DE102008053955B4 Verfahren zur Herstellung eines Halbleiterbauelements als Transistor mit Verbesserung der Verspannungsübertragung durch eine späte Gaterekristallisierung und Transistor A process for producing a semiconductor device as a transistor with improvement of the strain transfer by a late Gaterekristallisierung and transistor
10/21/2010CA2747776A1 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
10/20/2010EP2242108A1 Semiconductor manufacturing method
10/20/2010EP2242107A1 Semiconductor device
10/20/2010EP2242093A1 Lateral trench mosfet and method of forming the same
10/20/2010EP2240965A1 Amorphous oxide and field effect transistor
10/20/2010EP2240960A1 Regenerative building block and diode bridge rectifier and methods
10/20/2010EP2240958A1 Laminated structure, method of manufacturing a laminated structure, electronic element, electronic element array, image displaying medium, and image displaying device
10/20/2010EP2240956A1 Eeprom cell with charge loss
10/20/2010EP2240954A1 Method of growing, on a dielectric material, nanowires made of semiconductor materials connecting two electrodes
10/20/2010EP1147561B1 Lateral thin-film soi device having a lateral drift region and method of making such a device
10/20/2010CN201611660U 金属氧化物场效应二极管及mos二极管 Metal Oxide Semiconductor Field Effect mos diode and diode
10/20/2010CN201611658U 一种深沟槽功率mos器件 A dark trench power mos devices
10/20/2010CN1926693B Integrated circuit with multiple spacer insulating region widths
10/20/2010CN1728402B Ultra-thin body super-steep retrograde well (ssrw) fet device and its manufacture method
10/20/2010CN101868968A Light source frequency detection circuit using bipolar transistor
10/20/2010CN101868858A Semiconductor device, manufacturing method thereof and display device
10/20/2010CN101868857A Oxide semiconductor material, method for manufacturing oxide semiconductor material, electronic device and field effect transistor
10/20/2010CN101868856A Superjunction structures for power devices and methods of manufacture
10/20/2010CN101868850A Semiconductor device manufacturing method
10/20/2010CN101868757A Active matrix substrate, liquid-crystal display device having the substrate, and manufacturing method for the active matrix substrate
10/20/2010CN101866954A TFT substrate having micro-channel structure and preparation method thereof
10/20/2010CN101866953A Low Schottky barrier semiconductor structure and formation method thereof
10/20/2010CN101866952A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof
10/20/2010CN101866951A Semiconductor device
10/20/2010CN101866950A N-type metal oxide semiconductor element and fabricating method thereof
10/20/2010CN101866949A Semiconductor epitaxial substrate and method for manufacturing the same
10/20/2010CN101866948A Semiconductor high-voltage device chip and manufacture method thereof
10/20/2010CN101866947A Silicon germanium heterojunction bipolar transistor
10/20/2010CN101866946A Semiconductor device
10/20/2010CN101866931A 半导体结构及其形成方法 And a method for forming a semiconductor structure
10/20/2010CN101866926A Semiconductor storage device and method of manufacturing same
10/20/2010CN101866925A Semiconductor device
10/20/2010CN101866924A Semiconductor device and manufacturing method thereof
10/20/2010CN101866922A GGNMOS device used in ESD protective circuit
10/20/2010CN101866921A 功率半导体装置 The power semiconductor device
10/20/2010CN101866920A ESD protecting structure
10/20/2010CN101866919A Integrated circuit structure
10/20/2010CN101866916A ESD protection circuit of wide-voltage-swing interface circuit device and realization method thereof
10/20/2010CN101866891A Semiconductor circuit
10/20/2010CN101866885A Method of fabrication of a FINFET element
10/20/2010CN101866883A Manufacture method of CMOS (Complementary Metal Oxide Semiconductor) image sensor
10/20/2010CN101866860A Preparation method of ZnO thin film field-effect transistor
10/20/2010CN101866859A Channel stress introducing method and field-effect transistor prepared through same
10/20/2010CN101866857A Semiconductor device and manufacturing method thereof
10/20/2010CN101866856A NPN transistor and fabricating method thereof
10/20/2010CN101866855A Method for preparing chip of high-voltage planar fast-recovery diode
10/20/2010CN101866690A Method for using thin film transistor (TFT) as nonvolatile memory and device thereof
10/20/2010CN101863450A Nanoelectrode couple containing gate electrode and preparation method thereof
10/20/2010CN101546767B Self-shutoff thyristor capable of reducing on-state power consumption
10/20/2010CN101529609B Field-effect transistor
10/20/2010CN101521223B Manufacturing method of surface passivation structure of bipolar transistor
10/20/2010CN101416318B ESD protection circuit with isolated diode element and method thereof
10/20/2010CN101409234B Semiconductor structure and manufacture method thereof
10/20/2010CN101385132B Semiconductor device
10/20/2010CN101192625B Semiconductor device and its manufacture method
10/19/2010US7817229 Transflective type LCD and method for manufacturing the same
10/19/2010US7816866 Photocathode comprising a plurality of openings on an electron emission layer
10/19/2010US7816788 Structure, method and system for assessing bonding of electrodes in FCB packaging
10/19/2010US7816787 Method of forming low stress multi-layer metallurgical structures and high reliable lead free solder termination electrodes
10/19/2010US7816778 Packaged IC device comprising an embedded flex circuit on leadframe, and methods of making same
10/19/2010US7816767 Negative differential resistance diode and SRAM utilizing such device
10/19/2010US7816766 Semiconductor device with compressive and tensile stresses
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