Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
10/2010
10/28/2010US20100271850 Power transistor chip with built-in enhancement mode metal oxide semiconductor field effect transistor and application circuit thereof
10/28/2010US20100271787 Sensor module
10/28/2010US20100271376 Active matrix type display device
10/28/2010US20100271112 Spin transistor and method of operating the same
10/28/2010US20100271065 Semiconductor device and semiconductor device measuring system
10/28/2010US20100270686 Semiconductor device
10/28/2010US20100270662 Polysilicon drift fuse
10/28/2010US20100270658 Semiconductor device and method for producing same
10/28/2010US20100270656 Semiconductor Device and Method of Forming Conductive Pillars in Recessed Region of Peripheral Area Around the Device for Electrical Interconnection to Other Devices
10/28/2010US20100270654 Semiconductor device and method for manufacturing the same, dry-etching process, method for making electrical connections, and etching apparatus
10/28/2010US20100270653 Crystalline thin-film photovoltaic structures and methods for forming the same
10/28/2010US20100270651 Sapphire substrate with periodical structure
10/28/2010US20100270650 Silicon substrate with periodical structure
10/28/2010US20100270649 Nitride semiconductor wafer
10/28/2010US20100270647 Method of fabricating semiconductor device having capacitor
10/28/2010US20100270646 Thin-film capacitor structures embedded in semiconductor packages and methods of making
10/28/2010US20100270645 Thin-film capacitor structures embedded in semiconductor packages and methods of making
10/28/2010US20100270643 Semiconductor device and layout method therefor
10/28/2010US20100270642 Semiconductor device
10/28/2010US20100270639 Manufacturing method of soi substrate
10/28/2010US20100270634 Semiconductor device and manufacturing method thereof
10/28/2010US20100270633 Nonvolatile memory device
10/28/2010US20100270632 Resonator and Methods of Making Resonators
10/28/2010US20100270631 Mems microphone
10/28/2010US20100270630 Semiconductor device and method for manufacturing the same
10/28/2010US20100270629 Pressure sensor and manufacturing method thereof
10/28/2010US20100270628 Multifunction mens element and integrated method for making mos and multifunction mens
10/28/2010US20100270627 Method for protecting a gate structure during contact formation
10/28/2010US20100270626 Atomic layer deposition of hafnium lanthanum oxides
10/28/2010US20100270625 Method of fabricating high-voltage metal oxide semiconductor transistor devices
10/28/2010US20100270619 Fin field effect transistor having low leakage current and method of manufacturing the finfet
10/28/2010US20100270618 Production method of semiconductor device and semiconductor device
10/28/2010US20100270617 Nanowire electronic devices and method for producing the same
10/28/2010US20100270616 Semiconductor device and method of manufacturing the same
10/28/2010US20100270615 Method for increasing breaking down voltage of lateral diffused metal oxide semiconductor transistor
10/28/2010US20100270614 Process for manufacturing devices for power applications in integrated circuits
10/28/2010US20100270613 Method for manufacturing semiconductor device, and semiconductor device
10/28/2010US20100270612 Method for producing a vertical transistor component
10/28/2010US20100270611 Semiconductor device including a mos transistor and production method therefor
10/28/2010US20100270610 Nrom flash memory devices on ultrathin silicon
10/28/2010US20100270608 Integrated Circuits And Fabrication Using Sidewall Nitridation Processes
10/28/2010US20100270607 Nonvolatile semiconductor memory device and method for manufacturing the same
10/28/2010US20100270605 Nonvolatile memory cell and method for fabricating the same
10/28/2010US20100270604 Non-Volatile Memories and Methods of Fabrication Thereof
10/28/2010US20100270600 Semiconductor integrated circuit device and method of designing the same
10/28/2010US20100270599 Transistor structure with high reliability and method for manufacturing the same
10/28/2010US20100270598 Method for forming highly strained source/drain trenches
10/28/2010US20100270597 Method and apparatus for placing transistors in proximity to through-silicon vias
10/28/2010US20100270596 Mems sensor, method of manufacturing mems sensor, and electronic apparatus
10/28/2010US20100270595 Device for Detection of a Gas or Gas Mixture and Method for Manufacturing Such a Device
10/28/2010US20100270592 Semiconductor device
10/28/2010US20100270591 High-electron mobility transistor
10/28/2010US20100270590 Ald of silicon films on germanium
10/28/2010US20100270588 Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same
10/28/2010US20100270585 Method for manufacturing a reverse-conducting insulated gate bipolar transistor
10/28/2010US20100270584 Semiconductor Switching Device with Gate Connection
10/28/2010US20100270562 Semiconductor wafer, semiconductor thin film, and method for manufacturing semiconductor thin film devices
10/28/2010US20100270561 Method for manufacturing a cubic silicon carbide single crystal thin film and semiconductor device based on the cubic silicon carbide single crystal thin film
10/28/2010US20100270559 Field effect transistor and process for manufacturing same
10/28/2010US20100270558 Fabricating method of polycrystalline silicon thin film, polycrystalline silicon thin film fabricated using the same
10/28/2010US20100270557 Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
10/28/2010US20100270555 Thin film transistor array panel
10/28/2010US20100270554 Method of reforming a metal pattern, array substrate, and method of manufacturing the array substrate
10/28/2010US20100270551 Bottom gate thin film transistor and active array substrate
10/28/2010US20100270550 Pixel Structure and the Method of Forming the Same
10/28/2010US20100270549 Semiconductor Device and Method of Providing Electrostatic Discharge Protection for Integrated Passive Devices
10/28/2010US20100270548 Semiconductor element and method of making same
10/28/2010US20100270547 Semiconductor device
10/28/2010US20100270536 Concentric Gate Nanotube Transistor Devices
10/28/2010US20100270535 Electronic device including an electrically polled superlattice and related methods
10/28/2010US20100270534 Electronic device using quantum dot
10/28/2010US20100270533 ZnO-BASED SEMICONDUCTOR ELEMENT
10/28/2010US20100270531 GaN BASED LIGHT EMITTERS WITH BAND-EDGE ALIGNED CARRIER BLOCKING LAYERS
10/28/2010US20100270530 Semiconductor nanowire sensor device and method for manufacturing the same
10/28/2010US20100269893 Metal pastes and use thereof in the production of positive electrodes on p-type silicon surfaces
10/28/2010DE19937912B4 Halbleiterbauelement umfassend ein Paar schwebender Gates, zugehöriges Halbleiterbauelement und elektrisch programmier- und löschbares Speicherbauelement A semiconductor device comprising a pair of floating gates associated semiconductor device and electrically erasable programmable memory device and
10/28/2010DE112004001846B4 LDMOS-Transistor LDMOS transistor
10/28/2010DE102010011259A1 Halbleitervorrichtung Semiconductor device
10/28/2010DE102008038170B4 Verfahren zum Fertigen einer rippenförmigen Halbleiterstruktur sowie zum Fertigen eines Halbleiterbauelements A method of manufacturing a fin-shaped semiconductor structure, as well as for fabricating a semiconductor device
10/28/2010DE102004042156B4 Transistor mit asymmetrischem Source/Drain- und Halo- Implantationsgebiet und Verfahren zum Herstellen desselben Of the same transistor with an asymmetrical source / drain and halo implant region and process for producing
10/28/2010DE102004027152B4 Verfahren zum Herstellen einer Flüssigkristallanzeigevorrichtung, welche Dünnschichttransistoren mit polykristallinem Silizium aufweist A method of manufacturing a liquid crystal display device which has thin film transistors with polycrystalline silicon
10/27/2010EP2244306A1 A memory cell, an array, and a method for manufacturing a memory cell
10/27/2010EP2244305A1 Semiconductor device manufacturing method
10/27/2010EP2244304A1 Semiconductor device and fabrication method thereof
10/27/2010EP2244303A1 Semiconductor device and method for manufacturing the same
10/27/2010EP2244302A1 Method for forming film for organic semiconductor layer and method for manufacturing organic thin film transistor
10/27/2010EP2244301A1 Semiconductor device manufacturing method
10/27/2010EP2244300A2 Semiconductor device having a buried insulating layer and method of manufacturing the same
10/27/2010EP2244299A1 MOS transistor for power applications and corresponding integrated circuit and manufacturing method
10/27/2010EP2244298A2 Semiconductor device and manufacturing method thereof
10/27/2010EP2244297A1 Silicon carbide semiconductor device
10/27/2010EP2244288A1 Semiconductor element module and method for manufacturing the same
10/27/2010EP2244284A2 Schottky diode with improved high current behaviour and method for its production.
10/27/2010EP2244280A1 Method for treatment of surface of soi substrate
10/27/2010EP2243796A1 Polymer, organic thin film using the same, and organic thin film device
10/27/2010EP2243164A1 Field-effect transistor using amorphous oxide
10/27/2010EP2243154A1 Devices including fin transistors robust to gate shorts and methods of making the same
10/27/2010EP1602745B1 Hafnium alloy target and process for producing the same
10/27/2010EP1563545B1 Field effect transistor with functionalised nanotube and corresponding manufacturing method.
10/27/2010EP1416069B1 Organic semiconductor film and method for manufacture thereof
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