Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/10/2012US20120112252 Semiconductor structure and method for manufacturing the same
05/10/2012US20120112251 Reduction of random telegraph signal (RTS) and 1/f noise in silicon MOS devices, circuits, and sensors
05/10/2012US20120112250 Semiconductor Device Including Graphene And Method Of Manufacturing The Semiconductor Device
05/10/2012US20120112249 High performance semiconductor device and method of fabricating the same
05/10/2012US20120112248 Mechanisms for forming ultra shallow junction
05/10/2012US20120112244 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance
05/10/2012US20120112242 Semiconductor body with strained region
05/10/2012US20120112240 Semiconductor device
05/10/2012US20120112209 Silicon carbide substrate fabrication method, semiconductor device fabrication method, silicon carbide substrate, and semiconductor device
05/10/2012US20120112208 Stressed transistor with improved metastability
05/10/2012US20120112207 Method to reduce ground-plane poisoning of extremely-thin soi (etsoi) layer with thin buried oxide
05/10/2012US20120112206 Asymmetric hetero-structure fet and method of manufacture
05/10/2012US20120112205 Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer
05/10/2012US20120112203 Group-iii nitride semiconductor device, method for fabricating group-iii nitride semiconductor device, and epitaxial substrate
05/10/2012US20120112202 E-Mode High Electron Mobility Transistors And Methods Of Manufacturing The Same
05/10/2012US20120112201 High melting point soldering layer and fabrication method for the same, and semiconductor device
05/10/2012US20120112199 Thin film transistor array panel
05/10/2012US20120112198 Epitaxial growth of silicon carbide on sapphire
05/10/2012US20120112197 Active matrix substrate and active matrix display device
05/10/2012US20120112196 Thin film transistor and manufacturing method thereof
05/10/2012US20120112192 Power storage device
05/10/2012US20120112191 Semiconductor device
05/10/2012US20120112190 Epitaxial silicon wafer and method for manufacturing same
05/10/2012US20120112189 Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
05/10/2012US20120112187 Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film
05/10/2012US20120112186 Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
05/10/2012US20120112185 High-performance diode device structure and materials used for the same
05/10/2012US20120112184 Semiconductor device and manufacturing method thereof
05/10/2012US20120112183 Semiconductor device and method for manufacturing the same
05/10/2012US20120112181 Oxide semiconductor, thin film transistor including the same and thin film transistor display panel including the same
05/10/2012US20120112180 Metal oxide thin film transistor and manufacturing method thereof
05/10/2012US20120112166 Graphene based switching device having a tunable bandgap
05/10/2012US20120112164 Formation of a graphene layer on a large substrate
05/10/2012US20120112157 Nanowire sensor with angled segments that are differently functionalized
05/10/2012US20120112151 METHODS OF FORMING A CRYSTALLINE Pr1-xCaxMnO3 (PCMO) MATERIAL AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES COMPRISING CRYSTALLINE PCMO
05/10/2012US20120111096 Integration manufacturing process for mems device
05/10/2012DE112009002084T5 Kristallherstellungsvorrichtung, mit derselben hergestellte Halbleitervorrichtung, und Verfahren zur Herstellung einer Halbleitervorrichtung mit derselben Crystal manufacturing apparatus, prepared with the same semiconductor device and method of manufacturing a semiconductor device with the same
05/10/2012DE102011085331A1 Halbleitervorrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
05/10/2012DE102011004774A1 Integrierte Schaltung mit einer strahlungsempfindlichen Thyristorstruktur An integrated circuit comprising a radiation-sensitive thyristor
05/10/2012CA2815147A1 Power electronic device with edge passivation
05/10/2012CA2791183A1 Semiconductor device and method of manufacturing the same
05/10/2012CA2790077A1 Semiconductor device and method of manufacturing the same
05/10/2012CA2789371A1 Semiconductor device and fabrication method thereof
05/09/2012EP2451255A1 Electronic part manufacturing method and electronic part manufactured by the method
05/09/2012EP2450955A2 Termination and contact structures for a high voltage GaN-based heterojunction transistor
05/09/2012EP2450911A1 Conducting layer, and transducer and flexible wiring board using the same
05/09/2012EP2449595A1 Method for manufacturing semiconductor device
05/09/2012EP2449594A1 Method for manufacturing semiconductor device
05/09/2012EP2449593A1 Method for manufacturing semiconductor device
05/09/2012EP2449580A2 Scaling of bipolar transistors
05/09/2012EP2448863A1 Graphene device and method of fabricating a graphene device
05/09/2012EP1735837B1 Method of separating layers of material
05/09/2012EP1730951B1 Radiation tolerant ccd structure
05/09/2012CN202217666U 3,300V planar non-punch-through insulated gate bipolar transistor chip
05/09/2012CN202217665U Cooling triode
05/09/2012CN202217663U Array substrate and display apparatus
05/09/2012CN1906650B Display device and its fabrication method
05/09/2012CN1790750B Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus
05/09/2012CN1725522B Thin film transistor and flat panel display using the same
05/09/2012CN1442901B Device and method of manufacturing integrated circuit
05/09/2012CN1428020B Thermal diode for energy conversion and method for refrigeration using same
05/09/2012CN102449906A Mems element, and manufacturing method of mems element
05/09/2012CN102449798A Organic thin film transistor, surface light source and display device
05/09/2012CN102449785A Optical device, semiconductor substrate, optical device producing method, and semiconductor substrate producing method
05/09/2012CN102449772A A schottky device
05/09/2012CN102449771A Alkylsilane laminate, method for producing the same, and thin-film transistor
05/09/2012CN102449770A 3d channel architecture for semiconductor devices
05/09/2012CN102449769A Apparatus and method to fabricate an electronic device
05/09/2012CN102449768A Methods of forming semiconductor devices including epitaxial layers and related structures
05/09/2012CN102449740A Laser annealing method and laser annealing apparatus
05/09/2012CN102449734A Silicon carbide substrate production method and silicon carbide substrate
05/09/2012CN102449733A Silicon carbide substrate manufacturing method, silicon carbide substrate, and semiconductor device
05/09/2012CN102449732A Method for manufacturing silicon carbide substrate and silicon carbide substrate
05/09/2012CN102449489A Physical quantity sensor
05/09/2012CN102446981A Multi-layer metal-silicon nitride-metal capacitor and manufacturing method thereof
05/09/2012CN102446980A Low-forward-voltage-drop schottky diode and manufacturing method thereof
05/09/2012CN102446979A PIN (Positive Intrinsic Negative) diode and manufacturing method thereof
05/09/2012CN102446978A PIN device in bipolar complementary metal oxide semiconductor (BiCMOS) process
05/09/2012CN102446977A Axial commutation diode
05/09/2012CN102446976A Magneto-resistance effect switching transistor
05/09/2012CN102446975A Thin film transistor and flat panel display device including the same
05/09/2012CN102446974A FINFET and method of fabricating the same
05/09/2012CN102446973A UMOS semiconductor devices formed by low temperature processing
05/09/2012CN102446972A Transistor having notched fin structure and method of making the same
05/09/2012CN102446971A PMOS (P-channel metal oxide semiconductor) structure for improving transistor carrier mobility
05/09/2012CN102446970A Semiconductor device capable of preventing cavitation from forming during acid tank washing and manufacturing method of semiconductor device
05/09/2012CN102446969A Semiconductor device and forming method thereof
05/09/2012CN102446968A LDMOS (Laterally Diffused Metal Oxide Semiconductor) device structure and manufacturing method
05/09/2012CN102446967A Silicon-on-insulator laterally diffused metal oxide semiconductor (SOI LDMOS) device containing composite drift region
05/09/2012CN102446966A IGBT ((Insulated Gate Bipolar Transistor) structure of integrated anti-parallel diode and manufacturing method thereof
05/09/2012CN102446965A Germanium-silicon heterojunction bipolar transistor
05/09/2012CN102446964A Preparation method of ONO (oxide nitride oxide) structure utilizing DPN (diphesphopyridine nucleotide) silicon oxynitride as SONOS (silicon oxide nitride oxide semiconductor) storage medium layer
05/09/2012CN102446963A Composite tunneling dielectric layer and manufacturing method thereof and non-volatile memory
05/09/2012CN102446962A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) gate membrane structure compatible with self-aligned hole and pattern manufacturing method
05/09/2012CN102446961A Semiconductor device containing power device and preparation method thereof
05/09/2012CN102446960A 1T-DRAM (one transistor dynamic random access memory) unit structure and preparation method thereof
05/09/2012CN102446959A Buried layer N-type well-based heterojunction 1T-DRAM (one transistor dynamic random access memory) and preparation method thereof
05/09/2012CN102446958A Carbon silicon-germanium silicon heterojunction 1T-DRAM (Single Transistor Dynamic Random Access Memory) structure on insulator and forming method thereof
05/09/2012CN102446957A Structure of heterojunction field effect transistor and a fabrication method thereof
05/09/2012CN102446956A Semiconductor high-power device and manufacturing method thereof
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