Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2012
04/18/2012CN102422388A 碳化硅衬底和半导体器件 A silicon carbide substrate and the semiconductor device
04/18/2012CN102422387A Silicon carbide substrate, semiconductor device, and method for manufacturing silicon carbide substrate
04/18/2012CN102420258A 金属-绝缘体-金属mos电容器的结构及其制作方法 Metal - insulator - metal structure and production methods mos capacitor
04/18/2012CN102420257A 金属-绝缘体-金属mos电容器的结构及其制作方法 Metal - insulator - metal structure and production methods mos capacitor
04/18/2012CN102420256A 一种提高mim电容密度的结构及其制作工艺 Method for improving mim capacitance density structure and production process
04/18/2012CN102420255A 一种mim电容的改进结构及其制造工艺 One kind mim capacitor structure and the manufacturing process to improve
04/18/2012CN102420254A 薄膜带电体传感器及显示设备 Film charged body sensors and display devices
04/18/2012CN102420253A Vertical dual-diffusion metal oxide semiconductor (VDMOS) device with back surface embedded into strain medium region, and manufacturing method for VDMOS device
04/18/2012CN102420252A Ultrahigh cell density deep trench power metal oxide semiconductor (MOS) device and manufacturing method thereof
04/18/2012CN102420251A 一种具有非均匀浮岛结构的vdmos器件 A vdmos device structure having a non-uniform floating island
04/18/2012CN102420250A 具有超结结构的半导体器件及其制造方法 The method of manufacturing a semiconductor device having a super junction structure, and a
04/18/2012CN102420249A Power semiconductor device
04/18/2012CN102420248A 改进晶体管电子迁移率的半导体器件及其方法 A semiconductor device and a method to improve the electron mobility transistors
04/18/2012CN102420247A Ⅲ族氮化物hemt器件 Ⅲ nitride hemt devices
04/18/2012CN102420246A Gallium nitride based semiconductor devices and methods of manufacturing the same
04/18/2012CN102420245A Low-voltage trigger silicon controlled rectifier for ESD (Electro-Static Discharge) protection and manufacturing method of low-voltage trigger silicon controlled rectifier
04/18/2012CN102420244A One-dimensional metal/semiconductor nanometer heterojunction transistor and preparation method thereof
04/18/2012CN102420243A Germanium-silicon heterojunction bipolar transistor and manufacturing method thereof
04/18/2012CN102420242A 半导体装置 Semiconductor device
04/18/2012CN102420241A Semiconductor device and terminal structure at outer edge of the same
04/18/2012CN102420240A 超级结器件的终端保护结构及制造方法 Terminal protection structure and method of manufacture of super-junction devices
04/18/2012CN102420233A 提升sonos 器件数据保持力的方法以及sonos 器件结构 Enhance sonos device data retention force method and device structure sonos
04/18/2012CN102420232A 一种闪存器件及其形成方法 One kind of a flash memory device and method of forming
04/18/2012CN102420228A 抑制gidl效应的后栅极工艺半导体器件及其制备方法 After suppressing gate process gidl effect semiconductor device and its preparation method
04/18/2012CN102420227A 一种抑制漏极感应势垒降低效应的后栅极工艺cmos器件及其制备方法 A method of inhibiting the drain induced barrier lowering effect after gate process cmos device and its preparation method
04/18/2012CN102420226A 一种抑制漏极感应势垒降低效应的cmos器件及其制备方法 A method of inhibiting the drain induced barrier lowering effect of cmos device and its preparation method
04/18/2012CN102420209A 一种提高电容密度的结构及方法 A method for increasing the capacitance density of the structures and methods
04/18/2012CN102420146A Semiconductor device and method of manufacturing the semiconductor device
04/18/2012CN102420142A 一种优化高压ldmos器件源漏穿通性能的方法 A high voltage source and drain feedthrough ldmos device performance optimization methods
04/18/2012CN102420139A Mos晶体管及其制作方法 Mos transistor and manufacturing method thereof
04/18/2012CN102420110A 一种提高半导体器件中mim电容密度的方法及其器件 A method for increasing the capacitance density of a semiconductor device mim method and device
04/18/2012CN102420108A 铜大马士革工艺金属-绝缘层-金属电容制造工艺及结构 Copper damascene metal - insulator - metal capacitor manufacturing processes and structures
04/18/2012CN102420107A 铜大马士革工艺金属-绝缘层-金属电容制造工艺及结构 Copper damascene metal - insulator - metal capacitor manufacturing processes and structures
04/18/2012CN102420106A 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺 Copper damascene metal - insulator - metal capacitor structure and manufacturing process
04/18/2012CN102420105A Process for manufacturing metal-insulator-metal capacitor by using copper damascene process, and structure
04/18/2012CN102420103A 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺 Copper damascene metal - insulator - metal capacitor structure and manufacturing process
04/18/2012CN102420102A 一种形成mim电容器结构的方法及mim电容器 A method of forming a capacitor structure and mim mim capacitor
04/18/2012CN102419961A Driving circuit and display device using the same
04/18/2012CN102087977B 垂直npn晶体管及其制造方法 The vertical npn transistor and its manufacturing method
04/18/2012CN102054865B 用于静电保护结构的mos晶体管及其制造方法 Electrostatic protection structures mos transistor and manufacturing method for
04/18/2012CN102013399B 场效应晶体管制造方法 Field effect transistor manufacturing method
04/18/2012CN101976677B 基于ZnO肖特基二极管的相变随机存储器阵列及制作方法 ZnO-based Schottky diode, and a phase change random access memory array production method
04/18/2012CN101930982B 基于flotox结构的抗辐射eeprom存储单元结构 Based on the structure of the anti-flotox radiation eeprom memory cell structure
04/18/2012CN101901827B 核/壳型纤锌矿/闪锌矿ZnS异质纳米结构及其制备方法 The core / shell type wurtzite / sphalerite ZnS heterogeneous nanostructures and its preparation method
04/18/2012CN101771082B 绝缘衬底上的硅基横向双扩散金属氧化物半导体器件 Silicon on insulator substrate lateral double-diffused metal oxide semiconductor device
04/18/2012CN101697051B 液晶显示装置及其形成方法 Apparatus and method for forming LCD
04/18/2012CN101651151B 一种具有功能特性的异质结场效应管 A heterojunction field effect transistor having the features
04/18/2012CN101651150B 一种全氧化物异质结场效应管 An all-oxide heterostructure FET
04/18/2012CN101516962B Polymer compound and polymer light-emitting device using the same
04/18/2012CN101504933B 具有剪裁的电介质的p型场效应晶体管及方法和集成电路 A trimming of a dielectric and a method p-type field effect transistors and integrated circuits
04/18/2012CN101501856B Low voltage transient voltage suppressor with reduced breakdown voltage
04/18/2012CN101494225B 存储器及其制作方法 Memory and manufacturing method thereof
04/18/2012CN101356652B Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
04/18/2012CN101346810B 半导体装置的制造方法和半导体装置 The method of manufacturing a semiconductor device and a semiconductor device
04/18/2012CN101273456B 形状记忆装置 Shape memory device
04/18/2012CN101061585B 可缩放集成逻辑和非易失性存储器 Scalable Integrated logic and nonvolatile memory
04/17/2012US8159878 Semiconductor memory having both volatile and non-volatile functionality and method of operating
04/17/2012US8159856 Bipolar select device for resistive sense memory
04/17/2012US8159287 Transistor device and method
04/17/2012US8159077 Pad in semicondcutor device and fabricating method thereof
04/17/2012US8159076 Method of producing a via in a reconstituted substrate
04/17/2012US8159074 Chip structure
04/17/2012US8159071 Semiconductor package with a metal post
04/17/2012US8159054 Semiconductor device
04/17/2012US8159051 Semiconductor device and manufacturing method of semiconductor device
04/17/2012US8159050 Single crystal silicon structures
04/17/2012US8159049 Semiconductor structure for imaging detectors
04/17/2012US8159048 Bipolar junction transistor geometry
04/17/2012US8159044 Density transition zones for integrated circuits
04/17/2012US8159043 Semiconductor device
04/17/2012US8159040 Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor
04/17/2012US8159039 Superjunction device having a dielectric termination and methods for manufacturing the device
04/17/2012US8159038 Self aligned silicided contacts
04/17/2012US8159035 Metal gates of PMOS devices having high work functions
04/17/2012US8159029 High voltage device having reduced on-state resistance
04/17/2012US8159028 Metal high dielectric constant transistor with reverse-T gate
04/17/2012US8159027 Semiconductor device
04/17/2012US8159025 Gate electrode in a trench for power MOS transistors
04/17/2012US8159024 High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance
04/17/2012US8159023 Semiconductor device
04/17/2012US8159022 Robust semiconductor device with an emitter zone and a field stop zone
04/17/2012US8159021 Trench MOSFET with double epitaxial structure
04/17/2012US8159020 Non-volatile two transistor semiconductor memory cell and method for producing the same
04/17/2012US8159019 Semiconductor memory device with stacked gate including charge storage layer and control gate and method of manufacturing the same
04/17/2012US8159018 Non-volatile memory device
04/17/2012US8159017 Non-volatile memory device and method of manufacturing the same
04/17/2012US8159014 Localized biasing for silicon on insulator structures
04/17/2012US8159013 Semiconductor integrated circuit device having a dummy metal wiring line
04/17/2012US8159009 Semiconductor device having strain material
04/17/2012US8159007 Providing current to compensate for spurious current while receiving signals through a line
04/17/2012US8159006 Semiconductor device having a triple gate transistor and method for manufacturing the same
04/17/2012US8159004 Compound semiconductor device having dopant concentration gradient
04/17/2012US8159002 Heterostructure device and associated method
04/17/2012US8159001 Graded junction high voltage semiconductor device
04/17/2012US8158993 Nitride semiconductor crystal with surface texture
04/17/2012US8158991 Light-emitting element, light-emitting device, electronic device, and lighting device
04/17/2012US8158988 Interlevel conductive light shield
04/17/2012US8158987 Light-emitting diode and method for fabrication thereof
04/17/2012US8158986 System for display images and fabrication method thereof
04/17/2012US8158985 Thin film transistor devices with different electrical characteristics and method for fabricating the same
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