Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/02/2012CN102437183A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/02/2012CN102437182A SiO2/SiN double layer passivation layer T-typed grid AlGaN/GaN HEMT and manufacturing method thereof
05/02/2012CN102437181A N type silicon on insulator transverse insulated gate bipolar device
05/02/2012CN102437180A Ultra high voltage silicon germanium heterojunction bipolar transistor (HBT) device and manufacturing method thereof
05/02/2012CN102437179A Layout structure of total dose radiation hardening submicron device
05/02/2012CN102437178A Film transistor and production method thereof
05/02/2012CN102437177A Novel Schottky flip-chip and manufacturing process thereof
05/02/2012CN102437176A Process for increasing capacitance density of integrated circuit
05/02/2012CN102437175A Semiconductor device for realizing multilevel working voltages on gate oxide layer with single thickness and preparation method thereof
05/02/2012CN102437174A Silicon-controlled device
05/02/2012CN102437165A Wide band gap complementary metal oxide semiconductor (CMOS) structure on insulator and preparation method thereof
05/02/2012CN102437163A CMOS (Complementary Metal Oxide Semiconductor) structure of wide forbidden band material on insulator and preparation method thereof
05/02/2012CN102437161A Splitting grid memory cell and operation method thereof
05/02/2012CN102437160A Static memory active region structure and SRAM (system random access memory) layout
05/02/2012CN102437157A CMOS (complementary metal oxide semiconductor) device capable of implementing multistage working voltage by single-thickness gate oxide layer and preparation method thereof
05/02/2012CN102437127A One-transistor dynamic random access memory (DRAM) unit based on silicon-germanium silicon heterojunction, and method for preparing one-transistor DRAM unit
05/02/2012CN102437126A Single-transistor DRAM (dynamic random access memory) unit based on source heterojunction and preparation method thereof
05/02/2012CN102437117A Novel process for integrating silicide and metal foredielectric and forming structure thereof
05/02/2012CN102437057A Method for reducing semiconductor device hot carrier injection damage
05/02/2012CN102436529A Modeling method for metal oxide semiconductor (MOS) transistor reliability statistics models distributed based on Weibull
05/02/2012CN102432631A Nitrogen-containing functional group substituted alkoxy rare-earth metal lanthanum and gadolinium complex and synthetic method and application thereof
05/02/2012CN102157559B Low-power consumption tunneling field effect transistor (TFET) of fork-structure grid structure
05/02/2012CN101978480B Multilayer wiring, semiconductor device, substrate for display and display
05/02/2012CN101944539B Independent grid-controlled nano line field effect transistor
05/02/2012CN101939842B Semiconductor device manufacturing method
05/02/2012CN101908563B Capacitor and metal-oxide-metal capacitor
05/02/2012CN101859780B Transverse semiconductor component
05/02/2012CN101855938B Luminescent crystal and longitudinal field-effect transistors
05/02/2012CN101800230B Charge detection device and charge detection method, solid-state imaging device and driving method thereof, and imaging device
05/02/2012CN101681927B Inverter manufacturing method and inverter
05/02/2012CN101611479B Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor
05/02/2012CN101523574B Plasma oxidizing method and plasma processing apparatus
05/02/2012CN101454880B Plasma cvd method, method for forming silicon nitride film, method for manufacturing semiconductor device and plasma cvd device
05/02/2012CN101393916B Method of forming a high capacitance diode and structure therefor
05/02/2012CN101364546B FET device with stabilized threshold modifying material and method thereof
05/02/2012CN101330109B Semiconductor component with buffer layer
05/02/2012CN101180738B Asymmetric high voltage devices and method of fabrication
05/01/2012US8169826 Nonvolatile semiconductor memory device
05/01/2012US8169819 Semiconductor storage device
05/01/2012US8169424 Active matrix display device
05/01/2012US8169285 Semiconductor device with integrated coils
05/01/2012US8169089 Semiconductor device including semiconductor chip and sealing material
05/01/2012US8169087 Semiconductor device
05/01/2012US8169084 Bond pad structure and method for producing same
05/01/2012US8169081 Conductive routings in integrated circuits using under bump metallization
05/01/2012US8169079 Copper interconnection structures and semiconductor devices
05/01/2012US8169075 Electronic part with affixed MEMS
05/01/2012US8169062 Integrated circuit package for semiconductior devices with improved electric resistance and inductance
05/01/2012US8169057 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode
05/01/2012US8169054 Semiconductor device and method of manufacturing the same
05/01/2012US8169053 Resistive random access memories and methods of manufacturing the same
05/01/2012US8169052 Semiconductor device
05/01/2012US8169051 Semiconductor device including capacitor element and method of manufacturing the same
05/01/2012US8169050 BEOL wiring structures that include an on-chip inductor and an on-chip capacitor, and design structures for a radiofrequency integrated circuit
05/01/2012US8169047 Semiconductor device comprising a schottky barrier diode
05/01/2012US8169041 MEMS package and method for the production thereof
05/01/2012US8169039 Semiconductor device
05/01/2012US8169038 Semiconductor device and method of manufacturing the same
05/01/2012US8169037 Semiconductor integrated circuit including transistor having diffusion layer formed at outside of element isolation region for preventing soft error
05/01/2012US8169032 Gate stacks and semiconductor constructions
05/01/2012US8169027 Substrate band gap engineered multi-gate pMOS devices
05/01/2012US8169024 Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation
05/01/2012US8169023 Power semiconductor device
05/01/2012US8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making
05/01/2012US8169021 Trench gate semiconductor device and method of manufacturing the same
05/01/2012US8169020 Semiconductor device with buried bit lines and method for fabricating the same
05/01/2012US8169019 Metal-oxide-semiconductor chip and fabrication method thereof
05/01/2012US8169018 Non-volatile memory device
05/01/2012US8169017 Semiconductor device and method of manufacturing the same
05/01/2012US8169016 Nonvolatile semiconductor memory device and method of manufacturing the same
05/01/2012US8169014 Interdigitated capacitive structure for an integrated circuit
05/01/2012US8169013 Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)
05/01/2012US8169012 Semiconductor device and method of fabricating the semiconductor device
05/01/2012US8169009 Semiconductor device
05/01/2012US8169008 Semiconductor device
05/01/2012US8169007 Asymmetric junction field effect transistor
05/01/2012US8169005 High voltage GaN transistors
05/01/2012US8169004 Compound semiconductor epitaxial substrate and process for producing the same
05/01/2012US8169002 High electron mobility transistor and method for fabricating the same
05/01/2012US8168999 Semiconductor device having IGBT and diode
05/01/2012US8168985 Semiconductor module including a switch and non-central diode
05/01/2012US8168982 Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus
05/01/2012US8168981 Display substrate having stepped data line and a liquid crystal display device having the same
05/01/2012US8168980 Active matrix substrate, display device, television receiver, manufacturing method of active matrix substrate, forming method of gate insulating film
05/01/2012US8168979 Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
05/01/2012US8168977 Liquid crystal display and method for manufacturing the same
05/01/2012US8168976 Display panel and method for manufacturing the same
05/01/2012US8168975 Semiconductor device and manufacturing method thereof
05/01/2012US8168973 Thin film transistor
05/01/2012US8168972 Method for simultaneous recrystallization and doping of semiconductor layers and semiconductor layer systems produced according to this method
05/01/2012US8168971 Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
05/01/2012US8168969 Semiconductor-on-diamond devices and methods of forming
05/01/2012US8168968 Thin film transistor and organic light emitting display device using the same
05/01/2012US8168966 GaN-based semiconductor light-emitting device, light illuminator, image display planar light source device, and liquid crystal display assembly
05/01/2012US8168965 Semiconductor device and method using nanotube contacts
05/01/2012US8168964 Semiconductor device using graphene and method of manufacturing the same
05/01/2012US8168531 Semiconductor device and method of fabricating the same
05/01/2012US8168524 Non-volatile memory with erase gate on isolation zones
05/01/2012US8168500 Double gate depletion mode MOSFET
05/01/2012US8168498 Insulated gate type semiconductor device and method for fabricating the same
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