Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/17/2012US20120119303 Oxygen-Rich Layers Underlying BPSG
05/17/2012US20120119302 Trench Silicide Contact With Low Interface Resistance
05/17/2012US20120119297 Semiconductor Devices and Methods of Manufacture Thereof
05/17/2012US20120119296 Trench-generated transistor structures, device structures, and design structures
05/17/2012US20120119295 Semiconductor device and method for fabricating the same
05/17/2012US20120119293 High performance ldmos device having enhanced dielectric strain layer
05/17/2012US20120119292 Semiconductor device
05/17/2012US20120119291 Power device with self-aligned source regions
05/17/2012US20120119290 Semiconductor device including protrusion type isolation layer
05/17/2012US20120119289 Semiconductor device with vertical channel transistor and method of operating the same
05/17/2012US20120119288 Semiconductor device and method of manufacturing the same
05/17/2012US20120119287 3d semiconductor devices and methods of fabricating same
05/17/2012US20120119286 Semiconductor devices having vertical channel transistors and methods for fabricating the same
05/17/2012US20120119285 Semiconductor device and method for manufacturing the same
05/17/2012US20120119284 Semiconductor structures and methods of manufacture
05/17/2012US20120119283 Methods for forming etch stop layers, semiconductor devices having the same, and methods for fabricating semiconductor devices
05/17/2012US20120119281 Integrated circuit system with bandgap material and method of manufacture thereof
05/17/2012US20120119280 Charge Trap Non-Volatile Memory
05/17/2012US20120119278 Semiconductor device and method of forming the same
05/17/2012US20120119276 Memory device and method of fabricating the same
05/17/2012US20120119275 Buried decoupling capacitors, devices and systems including same, and methods of fabrication
05/17/2012US20120119273 Hydrogen barrier liner for ferro-electric random access memory (fram) chip
05/17/2012US20120119269 Method for producing electronic device, electronic device, semiconductor device, and transistor
05/17/2012US20120119268 Mixed Junction Source/Drain Field-Effect-Transistor and Method of Making the Same
05/17/2012US20120119267 Semiconductor device production method and semiconductor device
05/17/2012US20120119266 Stressor in Planar Field Effect Transistor Device
05/17/2012US20120119265 Source tip optimization for high voltage transistor devices
05/17/2012US20120119262 SiGe Heterojunction Bipolar Transistor and Method of Forming a SiGe Heterojunction Bipolar Transistor
05/17/2012US20120119261 Semiconductor device
05/17/2012US20120119260 Methods of Forming Semiconductor Contacts and Related Semiconductor Devices
05/17/2012US20120119259 Semiconductor device substrate with embedded stress region, and related fabrication methods
05/17/2012US20120119258 Vertical outgassing channels
05/17/2012US20120119257 Electrostatic discharge protection device and method of fabricating same
05/17/2012US20120119256 Power semiconductor module
05/17/2012US20120119255 Semiconductor device and method of manufacturing semiconductor device
05/17/2012US20120119232 Array substrate and a manufacturing method thereof
05/17/2012US20120119226 Semiconductor device and fabrication method for the same
05/17/2012US20120119225 Silicon carbide substrate, epitaxial layer provided substrate, semiconductor device, and method for manufacturing silicon carbide substrate
05/17/2012US20120119224 Composite substrate and method for manufacturing composite substrate
05/17/2012US20120119223 Gallium Nitride Semiconductor Structures with Compositionally-Graded Transition Layer
05/17/2012US20120119220 Nitride semiconductor structure
05/17/2012US20120119219 Nitride semiconductor element and nitride semiconductor package
05/17/2012US20120119218 Method for forming a semiconductor device using selective epitaxy of group iii-nitride
05/17/2012US20120119217 Nonplanar display device and method of manufacturing the same
05/17/2012US20120119216 Semiconductor Device, Method of Manufacturing A Semiconductor Device, and Display Device
05/17/2012US20120119214 Semiconductor device and manufacturing method thereof
05/17/2012US20120119213 Semiconductor device and a method for manufacturing the same
05/17/2012US20120119212 Semiconductor device and method for manufacturing the same
05/17/2012US20120119211 Thin film transistors and methods for manufacturing the same
05/17/2012US20120119210 Pixel structure and dual gate pixel structure
05/17/2012US20120119207 Interconnection structure and method for manufacturing the same, and display device including interconnection structure
05/17/2012US20120119206 Oxide Semiconductor Thin Film Transistor, and Method of Manufacturing the Same
05/17/2012US20120119205 Thin film transistor, display device, and electronic device
05/17/2012US20120119204 Replacement Gate Having Work Function at Valence Band Edge
05/17/2012US20120119203 GROUP IV ELEMENT DOPED P-TYPE Zn(Mg,Cd,Be)O(S,Se) SEMICONDUCTOR
05/17/2012US20120119202 Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture
05/17/2012US20120119189 Ohmic contact to semiconductor
05/17/2012US20120119183 Fabrication of an integrated terahertz source using field emitter array with grating structure
05/17/2012US20120119072 Optically patterned virtual electrodes and interconnects on polymer and semiconductive substrates
05/17/2012US20120118739 Devices and methods for sequencing nucleic acids
05/17/2012US20120118375 Semiconductor electrode, solar cell in which semiconductor electrode is used and semiconductor electrode manufacturing method
05/17/2012US20120118068 Semiconductor Pressure Sensor, Pressure Sensor Apparatus, Electronic Equipment, and Method of Manufacturing Semiconductor Pressure Sensor
05/16/2012EP2453481A2 Amorphous oxide and field effect transistor
05/16/2012EP2453480A2 Amorphous oxide and field effect transistor
05/16/2012EP2452942A1 Substituted benzochalcogenoacene compound, thin film comprising the compound, and organic semiconductor device including the thin film
05/16/2012EP2452362A1 Method for manufacturing semiconductor device
05/16/2012EP2263273B1 Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
05/16/2012EP2008310B1 Semiconductor device and method of manufacturing the same
05/16/2012EP1935024B1 A method for fabricating a high performance pin focal plane structure using three handle wafers
05/16/2012DE102011055224A1 Verfahren zum Herstellen eines Halbleiterchips und ein Halbleiterchip A method of manufacturing a semiconductor chip and a semiconductor chip
05/16/2012DE102006062831B9 Verfahren zum Herstellen eines Drain-Extended-MOS-Feldeffekttransistors und Drain-Extended-MOS-Feldeffekttransistor sowie elektronische Bauelement-Anordnung parallel geschalteter Drain-Extended-MOS-Feldeffekttransistoren A method for producing a drain-extended MOS field effect transistor and the drain-extended MOS field effect transistor as well as electronic component arrangement of parallel-connected drain-extended MOS field-effect transistors
05/16/2012DE102005063427B4 Halbleitervorrichtung Semiconductor device
05/16/2012CN202221764U High-current fast recovery rectifier diode
05/16/2012CN202221763U Buried layer structure of InAlN/GaN hetero-junction active area
05/16/2012CN202221762U Novel structure for back side of IGBT
05/16/2012CN1750168B Magnetic memory device and its operation method and producing method
05/16/2012CN1599960B Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors
05/16/2012CN1540762B Flash memory possessing groove type selection grid and manufacturing method
05/16/2012CN102460765A Organic electronic device and method for producing the same
05/16/2012CN102460713A Method for manufacturing semiconductor device
05/16/2012CN102460712A 薄膜晶体管以及薄膜晶体管的制造方法 The method of manufacturing a thin film transistor and the thin film transistor
05/16/2012CN102460711A 半导体装置 Semiconductor device
05/16/2012CN102460710A 高电压Ⅲ族氮化物半导体器件 High voltage Ⅲ nitride semiconductor device
05/16/2012CN102460709A 电力变换装置 Power conversion means
05/16/2012CN102460708A 具有非负温度系数的宽带隙双极可关断闸流管和相关控制电路 A wide bandgap bipolar negative temperature coefficient having a non-turn-off thyristors and the associated control circuitry
05/16/2012CN102460707A Miniature phase-corrected antennas for high resolution focal plane thz imaging arrays
05/16/2012CN102460706A 存储器单元、阵列、以及制造存储器单元的方法 A memory cell array, and a method of manufacturing a memory cell
05/16/2012CN102460705A 半导体器件中的单轴拉伸应变 The semiconductor device of uniaxial tensile strain
05/16/2012CN102460704A 半导体器件中的应变控制 Strain controlled semiconductor device
05/16/2012CN102460681A 稳定栅极介电层前藉由扩散栅极介电覆盖层调整复杂晶体管的阈值电压 Former stable gate dielectric layer by diffusion gate dielectric capping layer to adjust the threshold voltage of the transistor complex
05/16/2012CN102460664A 电子器件用外延衬底及其制造方法 An epitaxial substrate for electronic devices and manufacturing method
05/16/2012CN102460663A 用于处理半导体晶片的方法 The method for processing a semiconductor wafer
05/16/2012CN102460662A 用于处理半导体晶片的方法 The method for processing a semiconductor wafer
05/16/2012CN102460661A 具有引发应力的源极/漏极形成用间隔件的鳍式场效晶体管结构及用以制造该鳍式场效晶体管结构的方法 Source having induced stress / drain forming method fin field-effect transistor structure and for the manufacture of the spacer fin field effect transistor structure
05/16/2012CN102460660A 半导体装置的制造方法 The method of manufacturing a semiconductor device
05/16/2012CN102460659A 具有改善的局部匹配与端末电阻的rx基电阻器的半导体装置 The semiconductor device substrate resistor rx partial match with improved resistance Duanmo
05/16/2012CN102460652A Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
05/16/2012CN102456751A 低成本金属-绝缘体-金属电容器 Low-cost metal - insulator - metal capacitor
05/16/2012CN102456750A 用于提高电容器容量和兼容性的方法和装置 Method and apparatus to improve the capacity of the capacitor, and compatibility for
05/16/2012CN102456749A Mim电容结构及其制作方法 Mim capacitor structure and method of making
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