Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2012
04/19/2012US20120094417 Diode energy converter for chemical kinetic electron energy transfer
04/19/2012US20120094412 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same
04/19/2012US20120094411 Liquid crystal electro-optic device
04/19/2012US20120092935 Semiconductor memory device
04/19/2012US20120092926 Three dimensional non-volatile memory device and method of manufacturing the same
04/19/2012US20120091592 Double Patterning Technology Using Single-Patterning-Spacer-Technique
04/19/2012US20120091564 Semiconductor component with marginal region
04/19/2012US20120091563 Method for insulating a semiconductor material in a trench from a substrate
04/19/2012US20120091562 Semiconductor package
04/19/2012US20120091561 Mems devices
04/19/2012US20120091560 MIM Capacitors in Semiconductor Components
04/19/2012US20120091559 Capacitor and Method for Making Same
04/19/2012US20120091558 Shield-modulated tunable inductor device
04/19/2012US20120091548 Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same
04/19/2012US20120091547 Resonator and production method thereof
04/19/2012US20120091546 Microphone
04/19/2012US20120091545 Semiconductor component having a micromechanical microphone structure
04/19/2012US20120091544 Component having a micromechanical microphone structure, and method for its production
04/19/2012US20120091543 Electromechanical transducer and method of manufacturing the same
04/19/2012US20120091542 Methods for the deposition of ternary oxide gate dielectrics and structures formed thereby
04/19/2012US20120091541 Mixed metal oxides
04/19/2012US20120091540 Strained structure of a p-type field effect transistor
04/19/2012US20120091539 Facet-free semiconductor device
04/19/2012US20120091538 Finfet and method of fabricating the same
04/19/2012US20120091534 Semiconductor device with strain
04/19/2012US20120091530 Low trigger voltage electrostatic discharge NFET in triple well CMOS technology
04/19/2012US20120091527 Lateral double-diffused metal oxide semiconductor (ldmos) transistors
04/19/2012US20120091526 Ultra high voltage mos transistor device
04/19/2012US20120091525 Split Gate Oxides for a Laterally Diffused Metal Oxide Semiconductor (LDMOS)
04/19/2012US20120091524 Ldmos device structure and manufacturing method of the same
04/19/2012US20120091523 Trench mosfet with trench contact holes and method for fabricating the same
04/19/2012US20120091522 Semiconductor device and manufacturing method thereof
04/19/2012US20120091521 Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereof
04/19/2012US20120091519 Method and apparatus for improving capacitor capacitance and compatibility
04/19/2012US20120091518 Semiconductor device, method for forming the same, and data processing system
04/19/2012US20120091516 Lateral Floating Coupled Capacitor Device Termination Structures
04/19/2012US20120091514 Semiconductor Junction Diode Device And Method For Manufacturing The Same
04/19/2012US20120091513 Semiconductor switch device and method of manufacturing semiconductor switch device
04/19/2012US20120091511 Multi-fin device by self-aligned castle fin formation
04/19/2012US20120091509 Silicon-germanium heterojunction bipolar transistor
04/19/2012US20120091508 Compound semiconductor device
04/19/2012US20120091507 Structure of heterojunction field effect transistor and a fabrication method thereof
04/19/2012US20120091506 Method and Structure for pFET Junction Profile With SiGe Channel
04/19/2012US20120091505 Semiconductor device
04/19/2012US20120091504 Method of forming an esd protection device and structure therefor
04/19/2012US20120091502 Semiconductor device having plural insulated gate switching cells and method for designing the same
04/19/2012US20120091501 Low triggering voltage DIAC structure
04/19/2012US20120091472 Silicon carbide substrate
04/19/2012US20120091471 Lightly doped silicon carbide wafer and use thereof in high power devices
04/19/2012US20120091470 Programmable Gate III-Nitride Power Transistor
04/19/2012US20120091469 Semiconductor Devices Having Shallow Junctions
04/19/2012US20120091468 Semiconductor device with interposer and method manufacturing same
04/19/2012US20120091467 IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N
04/19/2012US20120091462 Tft monos or sonos memory cell structures
04/19/2012US20120091461 Thin film transistor substrate and method of manufacturing the same
04/19/2012US20120091460 Display Device and Method for Manufacturing the Same
04/19/2012US20120091458 Semiconductor device with amorphous silicon mas memory cell structure and manufacturing method thereof
04/19/2012US20120091457 Semiconductor component including a lateral transistor component
04/19/2012US20120091455 Pad structure having contact bars extending into substrate and wafer having the pad structure
04/19/2012US20120091453 Transparent Rectifying Metal/Metal Oxide/Semiconductor Contact Structure and Method for the Production Thereof and Use
04/19/2012US20120091452 Oxide semiconductor, thin film transistor array substrate and production method thereof, and display device
04/19/2012US20120091451 Zinc Oxide Nanostructures and Sensors Using Zinc Oxide Nanostructures
04/19/2012US20120091435 Epitaxial substrate for electronic device and method of producing the same
04/19/2012US20120091432 Nanowires
04/19/2012US20120091431 Low Temperature Synthesis of Nanowires in Solution
04/19/2012US20120091430 Nanoelectromechanical systems and methods for making the same
04/19/2012US20120091429 Resistive memory
04/19/2012US20120091414 Semiconductor device and method for manufacturing the same
04/19/2012US20120091011 Biocompatible electrode
04/19/2012US20120090675 Semiconductor substrate for solar cell and solar cell
04/19/2012DE10205324B4 Halbleiterbauelement Semiconductor device
04/19/2012DE102011084482A1 Verfahren zum Herstellen einer Luftbrücke A method for producing an air-bridge
04/19/2012DE102011053665A1 Anzeigevorrichtung mit organischen lichtemittierenden Dioden und Herstellungsverfahren für dieselbe A display device comprising organic light emitting diodes and manufacturing methods for the same
04/19/2012DE102011002534A9 Chippaket umfassend eine Vielzahl von Chips und Leiterausrichtung Chip package comprising a plurality of chips and circuit alignment
04/19/2012DE102010064290B3 Method for manufacturing semiconductor element for e.g. CPU, involves providing buried insulating layer under active region of substrate, removing part of oxidized material and forming drain- and source regions in active region
04/19/2012DE102009010882B4 Transistor mit einer eingebetteten Halbleiterlegierung in Drain- und Sourcegebieten, die sich unter die Gateelektrode erstreckt und Verfahren zum Herstellen des Transistors Transistor having an embedded semiconductor alloy in drain and source regions extending under the gate electrode and method of fabricating the transistor
04/19/2012DE102008002647B4 Verfahren zum Herstellen eines siliziumbasierten MOS-Halbleiterbauelements mit Rauschreduktion unter Verwendung von Gegendotierung A method of manufacturing a silicon-based MOS semiconductor device with noise reduction using counter-doping
04/19/2012DE102007037858B4 Halbleiterbauelement mit verbessertem dynamischen Verhalten A semiconductor device having an improved dynamic behavior
04/19/2012DE102005054872B4 Vertikales Leistungshalbleiterbauelement, Halbleiterbauteil und Verfahren zu deren Herstellung Vertical power semiconductor device, the semiconductor device and process for their preparation
04/19/2012DE102005021249B4 Halbleitervorrichtung Semiconductor device
04/19/2012DE102005001151B4 Bauelementanordnung zur Serienschaltung bei Hochspannungsanwendungen Component arrangement with the series circuit in high voltage applications
04/19/2012CA2814119A1 High bandgap iii-v alloys for high efficiency optoelectronics
04/18/2012EP2442366A1 Semiconductor device
04/18/2012EP2442365A2 Vertical-channel junction field-effect transistors having buried gates and methods of making
04/18/2012EP2442364A1 Gate stack structure for semiconductor flash memory device and preparation method thereof
04/18/2012EP2442363A2 Semiconductor device
04/18/2012EP2442357A2 Semiconductor device
04/18/2012EP2442355A1 Semiconductor device
04/18/2012EP1908119B1 Semiconductor component with a drift region and with a drift control region
04/18/2012EP1550164B1 Mosfets incorporating nickel germanosilicided gate and methods of their formation
04/18/2012CN202196774U Plastic packaged power diode with welded metal pad
04/18/2012CN1862831B 包括金属绝缘体转换材料的晶体管及其制造方法 Includes a transistor and a method of manufacturing a metal-insulator-converting material
04/18/2012CN1802750B Improved imager light shield
04/18/2012CN102422449A 有机半导体材料、有机半导体薄膜以及有机薄膜晶体管 The organic semiconductor materials, organic semiconductor thin film and organic thin film transistor
04/18/2012CN102422426A 半导体装置的制造方法 The method of manufacturing a semiconductor device
04/18/2012CN102422425A Insulating gate type bipolar transistor
04/18/2012CN102422424A 半导体器件 Semiconductor devices
04/18/2012CN102422416A 具备具有二极管区和igbt区的半导体基板的半导体装置 A semiconductor device having a diode region and the semiconductor substrate region igbt
04/18/2012CN102422402A 半导体器件 Semiconductor devices
04/18/2012CN102422397A Semiconductor device and method of producing same
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