Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/31/2012US20120132961 Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor
05/31/2012US20120132960 Regrown heterojunction bipolar transistors for multi-function integrated devices and method for fabricating the same
05/31/2012US20120132959 Wide bandgap transistor devices with field plates
05/31/2012US20120132958 High performance transistor
05/31/2012US20120132957 High performance strained source-drain structure and method of fabricating the same
05/31/2012US20120132956 Semiconductor component with high breakthrough tension and low forward resistance
05/31/2012US20120132955 Semiconductor device
05/31/2012US20120132954 Semiconductor device
05/31/2012US20120132928 Ohmic electrode for use in a semiconductor diamond device
05/31/2012US20120132927 Ohmic electrode and method of forming the same
05/31/2012US20120132926 Semiconductor device and method of manufacturing semiconductor device
05/31/2012US20120132925 Method for manufacturing a semiconductor structure, and a corresponding semiconductor structure
05/31/2012US20120132924 Silicon carbide semiconductor device and manufacturing method therefor
05/31/2012US20120132923 Substrate for integrated circuit and method for forming the same
05/31/2012US20120132922 Composite substrate with crystalline seed layer and carrier layer with a coincident cleavage plane
05/31/2012US20120132921 Reducing wafer distortion through a high cte layer
05/31/2012US20120132919 Semiconductor device
05/31/2012US20120132917 Display substrate and method of manufacturing the same
05/31/2012US20120132915 Thin film transistor array substrate and manufacturing method thereof
05/31/2012US20120132914 Oxide semiconductor thin film transistor structure and method of making the same
05/31/2012US20120132913 III-V Compound Semiconductor Material Passivation With Crystalline Interlayer
05/31/2012US20120132912 Semiconductor device
05/31/2012US20120132911 Thin film transistor having a two-layer semiconductor, manufacturing method therefor, and display apparatus using the same
05/31/2012US20120132910 Semiconductor device and method for manufacturing the same
05/31/2012US20120132908 Semiconductor device, manufacturing method thereof, and electronic device
05/31/2012US20120132907 Semiconductor film, semiconductor element, semiconductor device, and method for manufacturing the same
05/31/2012US20120132905 Semiconductor device and manufacturing method thereof
05/31/2012US20120132904 Semiconductor device and method for manufacturing the same
05/31/2012US20120132903 Semiconductor device and method for manufacturing semiconductor device
05/31/2012US20120132902 Semiconductor device and manufacturing method thereof
05/31/2012US20120132893 Graphene Electronic Devices
05/31/2012US20120132892 Nano Device
05/31/2012US20120132891 Precision quantum dot clusters
05/31/2012US20120132888 Light emitting device and method of fabricating the same
05/31/2012US20120132885 Fabrication of Graphene Electronic Devices Using Step Surface Contour
05/31/2012US20120132867 Semiconductor materials and methods of producing them
05/31/2012DE112009004530T5 Halbleitervorrichtung Semiconductor device
05/31/2012DE102011086943A1 Halbleitervorrichtung Semiconductor device
05/31/2012DE102011086854A1 Halbleitervorrichtung Semiconductor device
05/31/2012DE102011086500A1 Siliziumcarbid-Halbleitervorrichtung und deren Herstellungsverfahren Silicon carbide semiconductor device and its manufacturing method
05/31/2012DE102010030768B4 Herstellverfahren für ein Halbleiterbauelement als Transistor mit eingebettetem Si/Ge-Material mit geringerem Abstand und besserer Gleichmäßigkeit und Transistor Manufacturing method of a semiconductor device as a transistor with embedded Si / Ge material at a shorter distance and better uniformity and transistor
05/31/2012DE102007057222B4 Transistor mit isoliertem Gate Insulated gate transistor
05/31/2012DE102007019551B4 Halbleiterbauelement und Verfahren zur Herstellung desselben A semiconductor device and method of manufacturing the same
05/30/2012EP2458640A1 Multi-level memory device
05/30/2012EP2458639A1 Bipolar transistor with base trench contacts insulated from the emitter.
05/30/2012EP2458636A1 Compensation Network for RF Transistor
05/30/2012EP2458630A2 Package and high frequency terminal structure for the same
05/30/2012EP2458624A1 Heterojunction Bipolar Transistor Manufacturing Method and Integrated Circuit Comprising a Heterojunction Bipolar Transistor
05/30/2012EP2458623A1 Method of Manufacturing a Bipolar Transistor and Bipolar Transistor
05/30/2012EP2458577A1 Method for manufacturing thin film transistor substrate
05/30/2012EP2458359A1 Semiconductor pressure sensor, pressure sensor device, electronic apparatus, and method for manufacturing semiconductor pressure sensor
05/30/2012EP2457272A1 Novel organic semiconductive material and electronic device using the same
05/30/2012EP2457256A1 Semiconductor device and method for manufacturing semiconductor device
05/30/2012EP2165368B1 Amorphous oxide and field effect transistor
05/30/2012EP2122631B1 High speed otp sensing scheme
05/30/2012EP1488452B1 A method for making nanoscale wires and gaps for switches and transistors
05/30/2012CN202259318U Point contact type diode
05/30/2012CN202259317U Silicon plastic packaging patch diode
05/30/2012CN202259316U Bilateral switch diode
05/30/2012CN202259315U Silicon bidirectional trigger diode
05/30/2012CN202259314U Breakover diode
05/30/2012CN202259313U Active diode with low voltage drop
05/30/2012CN202259312U Electronic diode
05/30/2012CN202259311U TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array substrate and liquid crystal display
05/30/2012CN202259310U Thin film transistor, array substrate and liquid crystal display device
05/30/2012CN202259309U Isolation structure for high voltage drive circuit
05/30/2012CN202259308U Integrated triode
05/30/2012CN202259307U Thin film transistor based on anodic oxidation insulation layer
05/30/2012CN202259306U Low-gate capacitor insulated gate bipolar transistor (TGBT) power device
05/30/2012CN202259305U Ultrahigh-voltage diode chip with plane structure
05/30/2012CN202259304U Double-table-board silicon wafer for manufacturing chips
05/30/2012CN202259301U Electrostatic discharge protection structure integrated in insulated gate bipolar translator (IGBT) device
05/30/2012CN202259284U Novel high-voltage diode
05/30/2012CN202259239U High stability electronic triode
05/30/2012CN202259238U Audion with capacitance detector
05/30/2012CN202259235U Voltage-stabilizing diode structure
05/30/2012CN1988179B Non-volatile floating gate memory cells with polysilicon storage unit and fabrication methods thereof
05/30/2012CN1981344B Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer
05/30/2012CN1755945B 半导体器件 Semiconductor devices
05/30/2012CN1574079B Memory unit and semiconductor device
05/30/2012CN1555559B Selective operation of a multi-state non-volatile memory system in a binary mode
05/30/2012CN1542929B Process for fabricating Semiconductor device
05/30/2012CN1541037B White balance improved flat panel disply
05/30/2012CN102484141A Photo-crosslinkable material for organic thin film transistor insulating layer
05/30/2012CN102484140A Manufacturing method of semiconductor device
05/30/2012CN102484139A 氧化物半导体层及半导体装置 The oxide semiconductor layer, and a semiconductor device
05/30/2012CN102484138A 布线层、半导体装置、液晶显示装置 A wiring layer, a semiconductor device, a liquid crystal display device
05/30/2012CN102484137A Semiconductor device, liquid crystal display device equipped with semiconductor device, and process for production of semiconductor device
05/30/2012CN102484136A Semiconductor device, active matrix substrate, and display device
05/30/2012CN102484135A Thin-film transistor and method for manufacturing the thin-film transistor
05/30/2012CN102484134A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/30/2012CN102484133A A Fin-Fet Non-Volatile Memory Cell, And An Array And Method Of Manufacturing
05/30/2012CN102484132A Tunnel field effect devices
05/30/2012CN102484131A 半导体装置 Semiconductor device
05/30/2012CN102484130A 存储器请求调度的应用程序选择 Memory request scheduling application selection
05/30/2012CN102484129A Memristive junction with intrinsic rectifier
05/30/2012CN102484128A 具有用电压相关电阻器形成的本征二极管的可开关结 Having a voltage dependent resistor is formed by the intrinsic diode of the switching junction can be
05/30/2012CN102484127A Memristors based on mixed-metal-valence compounds
05/30/2012CN102484126A 碳化硅绝缘栅型半导体器件及其制造方法 SiC insulated gate type semiconductor device and its manufacturing method
05/30/2012CN102484125A Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices
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