Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2012
05/23/2012CN102468340A 薄膜晶体管与其形成方法 Its method of forming a thin film transistor
05/23/2012CN102468339A 主动元件及其制造方法 Active element and a method of manufacturing
05/23/2012CN102468338A 一种氧化锌基肖特基薄膜晶体管 A zinc oxide thin film transistor Jixiaoteji
05/23/2012CN102468337A 半导体器件 Semiconductor devices
05/23/2012CN102468336A 半导体器件 Semiconductor devices
05/23/2012CN102468335A LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and manufacturing method
05/23/2012CN102468334A VDMOS (Vertical Double-diffusion Metal Oxide Semiconductor Structure) device and manufacturing method thereof
05/23/2012CN102468333A Graphene device, and manufacturing method thereof
05/23/2012CN102468332A 一种基于绝缘体上硅的mos晶体管 Based on silicon-on-insulator transistor mos
05/23/2012CN102468331A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
05/23/2012CN102468330A 一种短路点新型布局的快速晶闸管 A new fast thyristor short circuit layout
05/23/2012CN102468329A Silicon germanium heterojunction bipolar transistor multi-fingered structure
05/23/2012CN102468328A 用于减少栅极电阻的接触结构及其制造方法 Reducing the resistance of the gate contact structure and manufacturing method for
05/23/2012CN102468327A Semiconductor device and method for manufacturing the same
05/23/2012CN102468326A Contact electrode manufacture method and semiconductor device
05/23/2012CN102468301A 半导体元件结构 Semiconductor device structures
05/23/2012CN102468297A 可调节维持电压esd保护器件 Adjustable sustain voltage esd protection devices
05/23/2012CN102468294A 一种集成大功率三极管 An integrated power transistor
05/23/2012CN102468272A 用于多晶硅栅耗尽测试的mos结构及制造方法 Polysilicon gate depletion test structure and method for manufacturing mos
05/23/2012CN102468235A 鳍片场效应晶体管(finfet)器件及其制造方法 A fin field effect transistor (finfet) device and manufacturing method
05/23/2012CN102468215A 沟槽隔离结构及其形成方法 Trench isolation structure and method of forming
05/23/2012CN102468213A 沟槽隔离结构及其形成方法 Trench isolation structure and method of forming
05/23/2012CN102468210A 一种隔离结构及制造方法、以及具有该结构的半导体器件 An isolation structure and manufacturing method, and a semiconductor device having the structure
05/23/2012CN102468181A 具有埋入式结的垂直晶体管及其制造方法 The method of manufacturing a vertical transistor and buried junction,
05/23/2012CN102468180A 金属栅极晶体管、集成电路、系统及其制造方法 Metal gate transistors, integrated circuits, the system and method of manufacturing
05/23/2012CN102468179A semiconductor device and method thereof
05/23/2012CN102468177A P-type doubled diffusion metal-oxide-semiconductor (DMOS) device and making method thereof
05/23/2012CN102468174A 一种半导体器件及其形成方法 A semiconductor device and method of forming
05/23/2012CN102468169A Umos晶体管及其形成方法 Umos transistor and method of forming
05/23/2012CN102468167A Mos晶体管及其制作方法 Mos transistor and manufacturing method thereof
05/23/2012CN102468166A Transistor and manufacturing method thereof
05/23/2012CN102468165A Transistor and manufacture method thereof
05/23/2012CN102468164A Transistor and manufacture method thereof
05/23/2012CN102468132A 一种半导体器件的制作方法及器件结构 Method of manufacturing a semiconductor device, and the device structure
05/23/2012CN102157561B Longitudinal channel SOI (silicon on insulator) nLDMOS (n-type laterally diffused metal oxide semiconductor) device unit with p buried layer
05/23/2012CN102082178B Vertical thin film transistor (TFT) and manufacturing method thereof as well as display device and manufacturing method thereof
05/23/2012CN101964364B Transistor device and manufacturing method thereof
05/23/2012CN101958328B CMOS (Complementary Metal Oxide Semiconductor) device and manufacturing method thereof
05/23/2012CN101916773B Double-channel MOS-HEMT (Metal Oxide Semiconductor-High Electron Mobility Transistor) device and manufacturing method
05/23/2012CN101901832B Controlled silicon punchthrough structure formed by gallium diffusion and production method thereof
05/23/2012CN101887895B Power transistor chip internally provided with enhancement metal-oxide-semiconductor field effect transistor (MOSFET) and applying circuit thereof
05/23/2012CN101887894B Static discharge protective device
05/23/2012CN101878521B Methods of etching trenches into silicon of a semiconductor subtrate, methods of forming trench isolation in silicon of a semiconductor substrate, and methods of forming a plurality of diodes
05/23/2012CN101866860B Preparation method of ZnO thin film field-effect transistor
05/23/2012CN101842878B Semiconductor device and method for manufacturing the same
05/23/2012CN101826560B Metal-insulator-metal structure for system-on-chip technology
05/23/2012CN101814503B Complementary grid-controlled PNPN field effect transistor and preparation method thereof
05/23/2012CN101803023B Semiconductor device
05/23/2012CN101796645B Method for manufacturing semiconductor device and semiconductor device
05/23/2012CN101764158B Body contacted hybrid surface semiconductor-on-insulator devices and methods
05/23/2012CN101728427B Semiconductor transistor
05/23/2012CN101692440B Mixed crystal orientation strain silicon substrate and method for preparing same
05/23/2012CN101689479B Semiconductor device and its manufacturing method
05/23/2012CN101681922B Amorphous oxide and field effect transistor
05/23/2012CN101640210B Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus
05/23/2012CN101617069B Systems and methods for processing a film, and thin films
05/23/2012CN101593774B Laterally double diffused metal oxide semiconductor transistor of silicon on P-type insulator
05/23/2012CN101589471B Semiconductor device and method of forming a semiconductor device
05/23/2012CN101582428B Nonvolatile semiconductor memory cell with electron-trapping erase state and method for operating the same
05/23/2012CN101577276B Insulated gate semiconductor device
05/23/2012CN101567393B Method and structure for semiconductor charge storage device
05/23/2012CN101548389B Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus
05/23/2012CN101528753B Novel fused-ring aromatic compound, process for producing the same, and use thereof
05/23/2012CN101523593B Semiconductor device manufacturing method and semiconductor device
05/23/2012CN101521210B 显示装置及其制造方法 Display device and method of manufacturing
05/23/2012CN101421056B Method for etching substrate, processing chamber for etching substrate and method for cleaning the processing chamber
05/23/2012CN101388400B Electro-optical device and manufacture method, and electronic apparatus
05/23/2012CN101369587B Display apparatus
05/23/2012CN101364613B Semiconductor component with dynamic behavior
05/23/2012CN101356626B Metal film decarbonizing method, film forming method and semiconductor device manufacturing method
05/23/2012CN101329898B Memory driving method and semiconductor storage device
05/23/2012CN101200633B Method for producing quantum dot silicate thin film for light emitting device
05/23/2012CN101142688B Non-planar mos structure with a strained channel region
05/23/2012CN101075643B Nonvolatile memory unit and method for operating the same
05/23/2012CN101069278B Method for enhancing field oxide and integrated circuit with enhanced field oxide
05/23/2012CN101051641B Semiconductor device and a method of manufacturing the same
05/22/2012USRE43401 Semiconductor device
05/22/2012US8184408 Magnetoresistive element and method of manufacturing the same
05/22/2012US8184226 Thin film transistor structure
05/22/2012US8184219 Stacked storage capacitor-on-gate structure for a thin film transistor liquid crystal display
05/22/2012US8184191 Optical sensor and solid-state imaging device
05/22/2012US8183697 Apparatus and methods of forming an interconnect between a workpiece and substrate
05/22/2012US8183695 Semiconductor device and method of manufacturing the same
05/22/2012US8183694 Reversing tone of patterns on integrated circuit and nanoscale fabrication
05/22/2012US8183693 Electronic device, method of producing the same, and semiconductor device
05/22/2012US8183670 Semiconductor device and method of manufacturing the same
05/22/2012US8183669 Nitride semiconductor wafer having a chamfered edge
05/22/2012US8183668 Gallium nitride substrate
05/22/2012US8183667 Epitaxial growth of crystalline material
05/22/2012US8183666 Semiconductor device including semiconductor zones and manufacturing method
05/22/2012US8183664 Electrostatic discharge protection device, method of manufacturing the same, method of testing the same
05/22/2012US8183661 Semiconductor die with event detection for reduced power consumption
05/22/2012US8183660 Semiconductor component having rectifying junctions of different magnitudes and method for producing the same
05/22/2012US8183658 Field-effect transistor (FET) with embedded diode
05/22/2012US8183654 Static magnetic field assisted resistive sense element
05/22/2012US8183653 Magnetic tunnel junction having coherent tunneling structure
05/22/2012US8183652 Non-volatile magnetic memory with low switching current and high thermal stability
05/22/2012US8183651 MEMS sensor, method of manufacturing MEMS sensor, and electronic apparatus
05/22/2012US8183649 Buried aperture nitride light-emitting device
05/22/2012US8183647 Semiconductor device and manufacturing method for silicon oxynitride film
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