Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2012
04/17/2012US8158984 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
04/17/2012US8158982 Polysilicon thin film transistor device with gate electrode thinner than gate line
04/17/2012US8158981 Radiation-sensitive composition, method of forming silica-based coating film, silica-based coating film, apparatus and member having silica-based coating film and photosensitizing agent for insulating film
04/17/2012US8158980 Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
04/17/2012US8158978 Inverter, logic circuit including an inverter and methods of fabricating the same
04/17/2012US8158976 Thin-film transistor and method of manufacturing the same
04/17/2012US8158975 Semiconductor device and manufacturing method thereof
04/17/2012US8158974 Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
04/17/2012US8158972 Organic photosensitive optoelectronic devices containing tetra-azaporphyrins
04/17/2012US8158971 Highly efficient organic light-emitting device using substrate or electrode having nanosized half-spherical convex and method for preparing the same
04/17/2012US8158970 Organic luminescence transistor device and manufacturing method thereof
04/17/2012US8158968 Methods of forming carbon nanotubes architectures and composites with high electrical and thermal conductivities and structures formed thereby
04/17/2012US8158964 Schottky diode switch and memory units containing the same
04/17/2012US8158963 Programmable resistive RAM and manufacturing method
04/17/2012US8158921 Dual conversion gain gate and capacitor combination
04/17/2012US8158835 Fluorene compound and organic electroluminescence device
04/17/2012US8158500 Field effect transistors (FETS) and methods of manufacture
04/17/2012US8158468 Production method for surrounding gate transistor semiconductor device
04/17/2012US8158464 Method of manufacturing a liquid crystal display device with a semiconductor film including zinc oxide
04/17/2012US8156804 Capacitive semiconductor sensor
04/12/2012WO2012047780A2 Fabrication of replacement metal gate devices
04/12/2012WO2012047770A2 Chemical mechanical planarization processes for fabrication of finfet devices
04/12/2012WO2012047342A2 Methods of forming semiconductor contacts and related semiconductor devices
04/12/2012WO2012047008A2 Method for manufacturing a polycrystalline silicon thin film
04/12/2012WO2012046658A1 Semiconductor device, display device, and method for manufacturing semiconductor device and display device
04/12/2012WO2012046480A1 Semiconductor device and method for manufacturing same
04/12/2012WO2012046428A1 Method for producing semiconductor device
04/12/2012WO2012046421A1 Thin film transistor substrate and process for production thereof
04/12/2012WO2012046329A1 Semiconductor device and method of production thereof
04/12/2012WO2012045781A1 Laminated glass and method for producing same
04/12/2012WO2012045257A1 Vertical channel field effect transistor and manufacturing method thereof
04/12/2012WO2012021197A3 Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof
04/12/2012WO2012021196A3 Method for manufacturing electronic devices and electronic devices thereof
04/12/2012US20120087521 Microphone Package with Embedded ASIC
04/12/2012US20120087378 Method and Apparatus for Producing Gallium Arsenide and Silicon Composites and Devices Incorporating Same
04/12/2012US20120087191 Symmetric, Differential Nonvolatile Memory Cell
04/12/2012US20120087185 Magnetic latch magnetic random access memory (mram)
04/12/2012US20120086497 Compound field effect transistor with multi-feed gate and serpentine interconnect
04/12/2012US20120086431 Vertical type sensor
04/12/2012US20120086107 Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device
04/12/2012US20120086106 Method for increasing the area of non-polar and semi-polar nitride substrates
04/12/2012US20120086105 Semiconductor device having capacitor capable of reducing additional processes and its manufacture method
04/12/2012US20120086104 ATOMIC LAYER DEPOSITION OF CRYSTALLINE PrCaMnO (PCMO) AND RELATED STRUCTURES AND METHODS
04/12/2012US20120086103 Technique to create a buried plate in embedded dynamic random access memory device
04/12/2012US20120086101 Integrated circuit and interconnect, and method of fabricating same
04/12/2012US20120086100 Cmos structure and method of manufacture
04/12/2012US20120086099 Schottky diode
04/12/2012US20120086098 Ionic isolation ring
04/12/2012US20120086090 Methods and apparatus for passive attachment of components for integrated circuits
04/12/2012US20120086088 Electronic component
04/12/2012US20120086087 Soi-based cmut device with buried electrodes
04/12/2012US20120086086 Mems device and composite substrate for an mems device
04/12/2012US20120086079 Semiconductor device
04/12/2012US20120086077 Fet structures with trench implantation to improve back channel leakage and body resistance
04/12/2012US20120086076 Super-junction semiconductor device
04/12/2012US20120086074 Semiconductor Devices And Methods of Forming The Same
04/12/2012US20120086073 Power semiconductor device and method for manufacturing same
04/12/2012US20120086072 Three-dimensional semiconductor memory device and related method of manufacture
04/12/2012US20120086071 Stress memorization process improvement for improved technology performance
04/12/2012US20120086070 Fabrication method and structure of semiconductor non-volatile memory device
04/12/2012US20120086069 Nonvolatile semiconductor memory device and method of fabricating the same
04/12/2012US20120086067 Semiconductor device and structure
04/12/2012US20120086065 Semiconductor device with vertical channel transistor and method of fabricating the same
04/12/2012US20120086064 Method of forming enhanced capacitance trench capacitor
04/12/2012US20120086060 Semiconductor device and method of forming the same
04/12/2012US20120086059 Engineering multiple threshold voltages in an integrated circuit
04/12/2012US20120086058 Tunnel field effect transistor
04/12/2012US20120086057 Nonvolatile memory device and method of manufacturing the same
04/12/2012US20120086056 Superior Integrity of a High-K Gate Stack by Forming a Controlled Undercut on the Basis of a Wet Chemistry
04/12/2012US20120086055 Devices with gate-to-gate isolation structures and methods of manufacture
04/12/2012US20120086054 Semiconductor structure and method for making the same
04/12/2012US20120086053 Transistor having notched fin structure and method of making the same
04/12/2012US20120086052 High voltage mos device and method for making the same
04/12/2012US20120086051 Semiconductor device with (110)-oriented silicon
04/12/2012US20120086049 E-Mode High Electron Mobility Transistor And Method Of Manufacturing The Same
04/12/2012US20120086048 Semiconductor devices and methods for manufacturing the same
04/12/2012US20120086047 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same
04/12/2012US20120086046 Self aligned device with enhanced stress and methods of manufacture
04/12/2012US20120086045 Vertical Semiconductor Device with Thinned Substrate
04/12/2012US20120086021 Multi-layer variable micro structure for sensing substance
04/12/2012US20120086017 Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof
04/12/2012US20120086016 Group iii nitride semiconductor and group iii nitride semiconductor structure
04/12/2012US20120086015 Group iii nitride semiconductor device, epitaxial substrate, and method of fabricating group iii nitride semiconductor device
04/12/2012US20120086014 Semiconductor Device Having Glue Layer And Supporter
04/12/2012US20120086013 Thin film transistor, array substrate and manufacturing method thereof
04/12/2012US20120086012 Liquid crystal display device
04/12/2012US20120086011 Display panel and method for manufacturing the same
04/12/2012US20120086008 Field-effect transistor, processes for producing the same, and electronic device using the same
04/12/2012US20120086007 Pin structures including intrinsic gallium arsenide, devices incorporating the same, and related methods
04/12/2012US20120086002 Thermally labile precursor compounds for improving the interparticulate contact sites and for filling the interstices in semiconductive metal oxide particle layers
04/12/2012US20120086001 Method for production of zinc oxide single crystals
04/12/2012US20120086000 Thin film element, semiconductor device, and method for manufacturing the same
04/12/2012US20120085999 Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors
04/12/2012US20120085998 Transistors and electronic devices including the same
04/12/2012US20120085991 Graphene nanoribbons, method of fabrication and their use in electronic devices
04/12/2012US20120085985 Electrically actuated device
04/12/2012DE102010042229A1 Höhere Integrität eines Gatestapels mit großem ε durch Erzeugen einer gesteuerten Unterhöhlung auf der Grundlage einer Nasschemie Greater integrity of a gate stack with large ε by generating a controlled undercut on the basis of a wet chemistry
04/12/2012DE102009046246B4 Herstellverfahren und Halbleiterbauelement mit Verformungstechnologie in dreidimensionalen Transistoren auf der Grundlage global verformter Halbleiterbasisschichten Manufacturing processes and semiconductor device with deformation technology in three-dimensional transistors based on globally deformed semiconductor base layers
04/12/2012DE102008063399B4 Asymmetrischer Transistor mit einer eingebetteten Halbleiterlegierung mit einer asymmetrischen Anordnung und Verfahren zur Herstellung des Transistors Asymmetric transistor having an embedded semiconductor alloy with an asymmetrical arrangement and method for manufacturing the transistor
04/12/2012DE102007021944B4 Freistehendes Nitrid-Halbleitersubstrat und lichtemittierende Vorrichtung Detached nitride semiconductor substrate and light emitting device